Semi

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1.
Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
A.
B.
C.
D.
2.
Ionization within a P-N junction causes a layer on each side of the barrier called the:
A.
junction
B.
depletion region
C.
barrier voltage
D.
forward voltage
3.
What is the most significant development in electronics since World War II?
A.
the development of color TV
B.
the development of the diode
C.
the development of the transistor
D.
the development of the TRIAC
4.
What causes the depletion region?
A.
doping
B.
diffusion
C.
barrier potential
D.
ions
5.
What is an energy gap?
A.
the space between two orbital shells
B.
the energy equal to the energy acquired by an electron passing a 1 V electric field
C.
the energy band in which electrons can move freely
D.
an energy level at which an electron can exist
6.
Silicon atoms combine into an orderly pattern called a:
SEMI CONDUCTOR
A.
covalent bond
B.
crystal
C.
semiconductor
D.
valence orbit
Answer & Explanation
Answer: Option B
Explanation:
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7.
In "n" type material, majority carriers would be:
A.
holes
B.
dopants
C.
slower
D.
electrons
Answer: Option D
Explanation:
8.
Elements with 1, 2, or 3 valence electrons usually make excellent:
A.
conductors
B.
semiconductors
C.
insulators
D.
neutral
Answer: Option A
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Explanation:
9.
A commonly used pentavalent material is:
A.
arsenic
B.
boron
C.
gallium
D.
neon
Answer: Option A
Explanation:
10.
Which material may also be considered a semiconductor element?
A.
carbon
B.
ceramic
C.
mica
D.
argon
Answer: Option A
11.
In "p" type material, minority carriers would be:
A.
holes
B.
dopants
C.
slower
D.
electrons
Answer: Option D
Explanation:
The purpose of p-type doping is to create an abundance of holes. In the case of silicon, a trivalent atom
(typically from Group 13 of the periodic table, such as boron or aluminium) is substituted into the crystal
SEMI CONDUCTOR
lattice. The result is that one electron is missing from one of the four covalent bonds normal for the silicon
lattice. Thus the dopant atom can accept an electron from a neighboring atom's covalent bond to complete the
fourth bond. This is why such dopants are called acceptors. The dopant atom accepts an electron, causing the
loss of half of one bond from the neighboring atom and resulting in the formation of a "hole". Each hole is
associated with a nearby negatively charged dopant ion, and the semiconductor remains electrically neutral as
a whole. However, once each hole has wandered away into the lattice, one proton in the atom at the hole's
location will be "exposed" and no longer cancelled by an electron. This atom will have 3 electrons and 1 hole
surrounding a particular nucleus with 4 protons. For this reason a hole behaves as a positive charge. When a
sufficiently large number of acceptor atoms are added, the holes greatly outnumber thermal excited electrons.
Thus, holes are the majority carriers, while electrons become minority carriers in p-type materials.
12.
What can a semiconductor sense?
A.
magnetism
B.
temperature
C.
pressure
D.
all of the above
Answer: Option D
Explanation:
13.
When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap
called?
A.
energy gap
B.
hole
C.
electron-hole pair
D.
recombination
Answer: Option B
SEMI CONDUCTOR
Explanation:
14.
Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?
A.
0.2
B.
0.3
C.
0.7
D.
0.8
Answer: Option C
Explanation:
15.
Which semiconductor material is made from coal ash?
A.
germanium
B.
silicon
C.
tin
D.
carbon
Answer: Option A
16.
When and who discovered that more than one transistor could be constructed on a single piece of
semiconductor material:
A.
1949, William Schockley
B.
1955, Walter Bratten
C.
1959, Robert Noyce
D.
1960, John Bardeen
SEMI CONDUCTOR
Answer: Option C
Explanation:
17.
When is a P-N junction formed?
A.
in a depletion region
B.
in a large reverse biased region
C.
the point at which two opposite doped materials come together
D.
whenever there is a forward voltage drop
Answer: Option C
Explanation:
18.
A P-N junction mimics a closed switch when it:
A.
has a low junction resistance
B.
is reverse biased
C.
cannot overcome its barrier voltage
D.
has a wide depletion region
Answer: Option A
Explanation:
SEMI CONDUCTOR
19.
Solid state devices were first manufactured during:
A.
World War 2
B.
1904
C.
1907
D.
1960
Answer: Option D
Explanation:
20.
Electron pair bonding occurs when atoms:
A.
lack electrons
B.
share holes
C.
lack holes
D.
share electrons
Answer: Option D
21.
How many valence electrons are in every semiconductor material?
A.
B.
C.
D.
Answer: Option D
Explanation:
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22.
What is a type of doping material?
A.
extrinsic semiconductor material
B.
pentavalent material
C.
n-type semiconductor
D.
majority carriers
Answer: Option B
Explanation:
23.
Minority carriers are many times activated by:
A.
heat
B.
pressure
C.
dopants
D.
forward bias
Answer: Option A
Explanation:
24.
What is the voltage across R1 if the P-N junction is made of silicon?
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A.
12 V
B.
11.7 V
C.
11.3 V
D.
0V
Answer: Option C
Explanation:
25.
If conductance increases as temperature increases, this is known as a:
A.
positive coefficient
B.
negative current flow
C.
negative coefficient
D.
positive resistance
Answer: Option C
Explanation:
A negative temperature coefficient (NTC) occurs when the thermal conductivity of a material rises with
increasing temperature, typically in a defined temperature range.
26.
Which of the following cannot actually move?
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A.
majority carriers
B.
ions
C.
holes
D.
free electrons
Answer: Option B
Explanation:
27.
What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?
A.
conductivity
B.
resistance
C.
power
D.
all of the above
Answer: Option A
Explanation:
No answer description available for this question

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SEMI CONDUCTOR

the development of color TV

the development of the diode

the development of the transistor

the development of the TRIAC

the space between two orbital shells

the energy band in which electrons can move freely

an energy level at which an electron can exist

Answer & Explanation

Answer & Explanation

Answer & Explanation

Answer & Explanation

Answer & Explanation

Answer & Explanation

all of the above

Answer & Explanation

Answer & Explanation

Answer & Explanation

Answer & Explanation

1949, William Schockley

1955, Walter Bratten

1959, Robert Noyce

1960, John Bardeen

Answer & Explanation

in a large reverse biased region

the point at which two opposite doped materials come together

whenever there is a forward voltage drop

Answer & Explanation

has a low junction resistance

cannot overcome its barrier voltage

has a wide depletion region

Answer & Explanation

Answer & Explanation

Answer & Explanation

Answer & Explanation

No answer description available for this question. Let us discuss.

extrinsic semiconductor material

Answer & Explanation

Answer & Explanation

Answer & Explanation

negative current flow

Answer & Explanation

Answer & Explanation

all of the above

Answer & Explanation

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