INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

END OF SEMESTER EXAMINATION

SEMESTER 1, 2012/2013 SESSION
KULLIYYAH OF ENGINEERING
Programme

: ENGINEERING

Level of Study

: UG 1

Time

: 9:00 am- 12:00 pm

Date

: 06/01/13

Duration

: 3 Hours

Course Code

: ECE 1312/ECE 1231

Section(s)

: 1 - 11

Course Title

: Electronics

This Question Paper Consists of Eight (8) Printed Pages (Including Cover Page) With
Six (6) Questions.
INSTRUCTION(S) TO CANDIDATES

DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO

Total mark of this examination is 100.

This examination is worth 50% of the total assessment.
Answer ANY FIVE questions.

Any form of cheating or attempt to cheat is a serious offence

which may lead to dismissal.

Electronics

ECE 1312 / ECE 1231

Q.1 [20 marks]

(a)

Calculate the majority and minority carrier concentrations in silicon at

T = 300 K. Assume, ni = 1.51010 cm-3 for Silicon.
(6 marks)
(i) Na = 1017 cm-3
(ii) Nd = 51015 cm-3

(b)

Describe the difference between a clipper and a clamper circuits.

(4 marks)

(c)

A diode circuit is shown in Fig. 1(c). Assume that the circuit and diode
parameters are
,
and
.
(10 marks)
(i) Perform DC analysis and calculate VO and ID.
(ii) Using AC analysis, calculate the diodes forward resistance, rf, vo and id.
(iii) Calculate the total instantaneous values of (combined values of DC and AC
components)
and .

Fig. 1(c)
Q.2 [20 marks]
(a)

A simple half-wave rectifier battery charger circuit is shown in Fig. 2(a). Assume
that battery voltage
, R = 100 ,
and
V.
Determine the peak diode current and maximum reverse-bias diode voltage.
(6 marks)

Fig. 2(a)

Electronics

(b)

ECE 1312 / ECE 1231

Fig. 2(b) shows a multiple diode circuit. If each diode cut-in voltage
is
, determine the diode current ID1 and the output voltage .
(7 marks)

Fig. 2(b)

(c) A full-wave bridge rectifier circuit is shown in Fig. 2(c). Determine the peak
output voltage and peak current in the load
. Assume each diode cut-in voltage
is

and diode forward resistance is

Fig. 2(c)

(7 marks)

Electronics

ECE 1312 / ECE 1231

Q.3 [20 marks]

(a) The voltage transfer characteristic and its BJT circuit are shown in Fig. 3(a).
Assume VBE(on) = 0.7 V, VCE(sat) = 0.2 V and = 120.
(i) Find the value of the resistor, RB using VI = 1.9 V
(ii) Sketch the output load line for the circuit.

(6 marks)
(6 marks)

RB

Fig. 3(a)
(b)

For the biasing circuit shown in Fig. 3(b), RB = 250 k, RC = 5 k and

VCC = 10 V. Assume that VBE(on) = 0.7 V and = 30, calculate VB, IBQ, ICQ, VC
and VCEQ.
(8 marks)

Fig. 3(b)

Electronics

ECE 1312 / ECE 1231

Q.4 [20 marks]

(a)

For the circuit shown in Fig. 4(a), the transistor parameters are = 110,
VBE(on) = 0.7 V, ICQ = 0.2 mA and VCEQ = 3.2 V. Assume RE = 21 k,
RC = 13 k and ro = .
(i) Calculate the small-signal transistor parameters, r and gm.
(ii) Draw the small-signal equivalent circuit.
(iii) Find the small-signal voltage gain Av.

(4 marks)
(2 marks)
(4 marks)

Fig. 4(a)
(b)

Draw the small-signal equivalent circuit for the common collector circuit in
Fig. 4(b). Given that ICQ = 1.0 mA, ro = , VBE(on) = 0.7 V and = 100,
calculate the output resistance, Ro and input resistance, Rin of the circuit.
(10 marks)

Fig. 4(b)

Electronics

ECE 1312 / ECE 1231

Q.5 [20 marks]

(a)

State two (2) differences between a MOSFET and a BJT.

(4 marks)

(b)

Fig. 5(b) shows a NMOS circuit with parameters VTN = 0.6 V and
Kn = 0.2 mA/V2. Determine VS and VD. Sketch the load line and show the
Q-point.
(5 marks)

Fig. 5(b)

(c)

A common-source amplifier is shown in Fig. 5(c), where VTP = -1.5 V,

Kp= 2mA/V2, = 0.01 V-1, RD = 2 k and IQ = 2.6 mA.
(i) Draw the small-signal equivalent circuit and calculate gm and ro.
(5 marks)
(ii) Determine the voltage gain, Av = vo/vi, for RL = 20 k and for RL = .
(6 marks)

Fig. 5(c)

Electronics

ECE 1312 / ECE 1231

Q.6 [20 marks]

(a)

Sketch the typical I-V characteristics and indicate the nonsaturation and saturation
regions for an n-channel MOSFET at various values of VGS (VGS3 > VGS2 > VGS1).
Also show the pinch-off points on the plotted curves.
(6 marks)

(b)

Fig. 6 (b) shows an n-channel MOSFET logic gate.

(i) Draw the corresponding truth table of the logic gate.
(ii) Identify the function of the circuit. (AND/OR/NOR/NAND gate)

(3 marks)
(1 marks)

Fig. 6(b)

(c)

An op-amp inverting amplifier circuit is shown in Fig. 6(c).

(10 marks)

(i) Show that the close-loop voltage gain of the inverting amplifier, Av = - R2/R1.
(ii) Determine the values of R1 and R2, if the gain Av = -8, the current in the
feedback resistor is 10 A when the output voltage is 5.0 V.

Fig. 6(c)

Electronics

ECE 1312 / ECE 1231

Useful equations for MOSFET:

I D K n [2VGS VTN VDS VDS ]
2

I D K p [2VSG VTP VSD VSD ]

2

I D K n VGS VTN

I D K P VSG VTP

ro

VA
I CQ

where V A

g m 2 K n I DQ

Useful equations for BJT:

I CQ
V
gm
ro A
VT
I CQ
VT
r
I CQ
g m r

Useful equation for PN junction:

vD

I D I s (e VT 1)