Académique Documents
Professionnel Documents
Culture Documents
Matric No.:__________________
Time
Date
: 8:00 - 9:30 pm
Duration
: 25-May-2010
: 1 Hour 30 Minutes
INSTRUCTIONS TO CANDIDATES
Marks
Marks
Obtained
Question
1
20
Question
2
20
Question
3
20
Total
Marks
60
Midterm Examination
(b) Determine the intrinsic carrier concentration in Germanium at T = 450K. Also calculate
the built-in voltage for a Germanium pn junction, if Na = 1015 cm-3 in the p-region and Nd
= 1018 cm -3 in the n-region, given that Boltzmans constant k = 86 x 10 -6, coefficient for
Germanium B = 1.66 x 1015 cm -3K-3/2 and Eg = 0.66 eV.
(9 marks)
Midterm Examination
Fig. 1(c)
Midterm Examination
V
I D 0.2 5 10 14 exp D 1 A
VT
The short-circuit current is defined as ISC = ID when VD = 0 and the open-circuit voltage is
defined as VOC = VD when ID = 0. Calculate the values of ISC and VOC.
(6 marks)
Midterm Examination
(b) A silicon pn junction at T = 300 K is doped at Nd = 1015 cm-3 and Na = 1018 cm-3. The zerobias junction capacitance is Cjo = 0.25 pF. Find the junction capacitance, Cj. When an
inductance of 2.5 mH is placed across the pn junction, resonance occurs at fr =
Calculate the resonance frequency, fr if VR = 1 V.
1
2
LC
(8 marks)
(c) Consider the circuit in Fig. 2(c). The output of a diode OR logic gate is connected to the
input of a second diode OR logic gate. Assume V 0 for each diode. Determine the
Midterm Examination
Fig. 2(c)
Midterm Examination
Fig. 3(a)
Midterm Examination
(b) For the diode clipper circuit in Fig. 3(b), plot O versus time over two periods for
sinusoidal input signal. Assume vI = 15 sin t, VB1 = 5 V, vB2 = 3 V and V = 0 for each
diode.
(8 marks)
Fig. 3(b)