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Vishay Semiconductors
94 8389
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a blue-gray plastic
package.
APPLICATIONS
Infrared remote control units with high power reqirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
(deg)
p (nm)
tr (ns)
170
10
940
15
TSAL6100
Note
Test conditions see table Basic Characteristics
ORDERING INFORMATION
ORDERING CODE
TSAL6100
PACKAGING
REMARKS
PACKAGE FORM
Bulk
T-1
Note
MOQ: minimum order quantity
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
UNIT
V
Forward current
IF
100
mA
200
mA
IFM
tp = 100 s
IFSM
1.5
PV
160
mW
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tj
100
Tamb
-40 to +85
C
C
Tstg
-40 to +100
t 5 s, 2 mm from case
Tsd
260
RthJA
230
K/W
TSAL6100
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Vishay Semiconductors
120
160
180
140
120
100
80
60
40
100
80
20
0
0
0
10
21211
20 30
40
50
60
70 80
90
100
10
21212
20 30 40
50 60 70 80
90 100
TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.35
1.6
IF = 1 A, tp = 100 s
VF
2.2
Temperature coefficient of VF
IF = 1 mA
TKVF
-1.8
Reverse current
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
80
170
650
1450
Forward voltage
Junction capacitance
Radiant intensity
MIN.
V
mV/K
10
400
mW/sr
40
pF
IF = 1 A, tp = 100 s
Ie
IF = 100 mA, tp = 20 ms
40
mW
IF = 20 mA
TKe
-0.6
%/K
10
deg
Peak wavelength
IF = 100 mA
940
nm
Spectral bandwidth
IF = 100 mA
30
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.2
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
Radiant power
Temperature coefficient of e
Angle of half intensity
mW/sr
TSAL6100
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Vishay Semiconductors
10 0
0.1
0.5
1.0
10 -1
-2
10
96 11987
tp = 100 s
10 1
100
10
0.1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 2
1000
1.6
1000
100
1.2
Ie rel; e rel
100
IF = 20 mA
0.8
10
0.4
tp = 100 s
tp/T= 0.001
0
-10 0 10
1
0
21534
94 7993
50
100
140
10000
100
10
tp = 100 s
1000
100
10
0.1
1
10
100
80
21445
IF = 30 mA
70
60
50
40
30
20
10
0
840
1000
90
880
920
960
1000
1040
- Wavelength (nm)
TSAL6100
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Vishay Semiconductors
10
20
40
1.0
0.9
50
0.8
60
70
0.7
- Angular Displacement
30
80
0.6
0.4
0.2
15989
5.8 0.15
R2.49 (sphere)
(4.4)
35.2 0.55
< 0.7
8.7 0.3
7.7 0.15
+ 0.2
0.6 - 0.1
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5259.08-4
Issue: 3; 19.05.09
14436
Vishay
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Revision: 02-Oct-12