Académique Documents
Professionnel Documents
Culture Documents
Vishay Siliconix
rDS(on) (W)
ID (A)
0.30
0.22
0.21
0.44
0.34
0.32
20
P-Channel
20
Qg (Typ)
0.72
0.52
SOT-363
SC-70 (6-LEADS)
S1
D1
G1
G2
D2
S2
RD
XX
YY
Marking Code
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1551DL-T1
Si1551DL-T1E3 (Lead (Pb)-Free)
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA = 25_C
TA = 85_C
ID
5 secs
IS
TA = 25_C
TA = 85_C
PD
Steady State
5 secs
20
Steady State
Unit
20
"12
0.30
0.29
0.44
0.22
0.21
0.31
IDM
P-Channel
0.6
0.41
0.30
0.25
0.23
0.25
0.23
0.30
0.27
0.30
0.27
0.16
0.14
0.16
0.14
TJ, Tstg
1.0
55 to 150
_C
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
360
415
400
460
300
350
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Document Number: 71255
S-42353Rev. C, 20-Dec-04
www.vishay.com
Si1551DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Forward Transconductancea
VGS(th)
IGSS
IDSS
ID(on)
D( )
rDS(on)
DS( )
gfs
f
VSD
N-Ch
0.6
1.5
P-Ch
0.6
1.5
VDS = 0 V,
V VGS = "12 V
N-Ch
"100
P-Ch
"100
VDS = 20 V, VGS = 0 V
N-Ch
VDS = 20 V, VGS = 0 V
P-Ch
N-Ch
P-Ch
N-Ch
0.6
P-Ch
1.0
nA
mA
5
A
N-Ch
1.55
1.9
P-Ch
0.850
0.995
N-Ch
2.8
3.7
P-Ch
1.23
1.600
N-Ch
3.0
4.2
P-Ch
1.4
1.800
VDS = 10 V, ID = 0.29 A
N-Ch
0.3
VDS = 10 V, ID = 0.41 A
P-Ch
0.8
IS = 0.23 A, VGS = 0 V
N-Ch
0.8
1.2
IS = 0.23 A, VGS = 0 V
P-Ch
0.8
1.2
N-Ch
0.72
1.5
1.8
Dynamicb
Total Gate Charge
Qg
Qgs
Qgdd
Rise Time
Fall Time
Source-Drain
Reverse Recovery Time
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 0.29 A
P-Channel
VDS = 10
10 V
V, VGS = 4.5
45V
V, ID = 0.41
0 41 A
td(on)
d( )
P-Ch
0.52
N-Ch
0.22
P-Ch
0.11
N-Ch
0.13
P-Ch
0.14
N-Ch
23
40
nC
P-Ch
7.5
15
tr
N-Channel
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W
N-Ch
30
60
P-Ch
20
40
td(off)
d( ff)
P-Channel
VDD = 10
10 V,
V RL = 20 W
ID ^ 0.5
0.5 A, VGEN = 4.5
4.5 V, Rg = 6 W
N-Ch
10
20
P-Ch
8.5
17
N-Ch
15
30
P-Ch
12
24
N-Ch
20
40
P-Ch
25
40
tf
trr
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
Output Characteristics
Transfer Characteristics
0.6
0.6
VGS = 5 thru 3.5 V
0.5
TC = 55_C
0.5
I D Drain Current (A)
3V
0.4
0.3
2.5 V
0.2
2V
0.1
25_C
0.4
0.3
125_C
0.2
0.1
1.5 V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
3.0
0.5
1.0
2.5
3.0
3.5
4.0
Capacitance
100
5
C Capacitance (pF)
r DS(on) On-Resistance ( W )
2.0
1.5
VGS = 2.5 V
VGS = 2.7 V
3
VGS = 4.5 V
80
Ciss
60
40
Coss
20
Crss
0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
Gate Charge
16
20
VDS = 10 V
ID = 0.29 A
1.6
4
rDS(on) On-Resiistance
(Normalized)
12
0
0.0
VGS = 4.5 V
ID = 0.29 A
1.4
1.2
1.0
0.8
0.2
0.4
0.6
0.8
0.6
50
25
25
50
75
100
125
150
www.vishay.com
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
r DS(on) On-Resistance ( W )
TJ = 150_C
TJ = 25_C
5
4
ID = 0.29 A
3
2
1
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Threshold Voltage
0.2
0.1
ID = 250 mA
0.0
Power (W)
0.1
0.2
0.3
50
25
25
50
75
100
125
150
0
103
102
101
TJ Temperature (_C)
10
100
600
Time (sec)
2
1
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA =400_C/W
3. TJM TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
104
www.vishay.com
103
102
101
1
Square Wave Pulse Duration (sec)
10
100
600
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
2
1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
10
PCHANNEL
Output Characteristics
Transfer Characteristics
1.0
1.0
VGS = 5 thru 3 V
0.8
2.5 V
I D Drain Current (A)
0.8
TC = 55_C
0.6
0.4
2V
0.2
0.6
125_C
0.4
0.2
1V
0.0
0.0
25_C
0.5
1.0
1.5 V
1.5
2.0
2.5
0.0
0.0
3.0
0.5
VGS = 2.5 V
1.5
VGS = 2.7 V
VGS = 4.5 V
1.0
2.0
2.5
3.0
Capacitance
100
2.5
2.0
1.5
C Capacitance (pF)
r DS(on) On-Resistance ( W )
3.0
1.0
80
Ciss
60
40
Coss
20
0.5
Crss
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
12
16
20
www.vishay.com
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PCHANNEL
Gate Charge
VDS = 10 V
ID = 0.41 A
VGS = 4.5 V
ID = 0.41 A
rDS(on) On-Resiistance
(Normalized)
0
0.0
1.4
1.2
1.0
0.8
0.1
0.2
0.3
0.4
0.5
0.6
50
0.6
25
100
125
150
r DS(on) On-Resistance ( W )
TJ = 150_C
TJ = 25_C
2.5
2.0
ID = 0.41 A
1.5
1.0
0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Threshold Voltage
0.4
0.3
4
ID = 250 mA
0.2
Power (W)
75
3.0
0.1
0.0
1
0.1
0.2
50
25
25
50
75
TJ Temperature (_C)
www.vishay.com
50
0.1
0.0
25
100
125
150
0
103
102
101
10
100
600
Time (sec)
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PCHANNEL
2
1
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 400_C/W
3. TJM TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
104
103
102
101
1
Square Wave Pulse Duration (sec)
10
100
600
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71255.
Document Number: 71255
S-42353Rev. C, 20-Dec-04
www.vishay.com
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
www.vishay.com
1