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Millimeter-wave Tcehnology

Mrinal Kanti Mandal


mkmandal@ece.iitkgp.ernet.in

Department of E & ECE


I.I.T. Kharagpur.
1

Dielectric Resonators
Materials: usually ceramic with high r (10-100).

Pros: compact size, lower loss. Cons: sensitive to


temperature and mechanical vibration/stress etc.

Support hybrid modes - HEMnml , and TE/TM.

d
a

Isolated dielectric
resonator

Hybrid modes are HEnml when EZ dominates over


Hz and EHnml, when HZ dominates over Ez.
n circumferential (), m radial (r) and l axial
(z) variations.
For n = 0, axisymmetric modes TM0ml and
TE0ml.
l is replaced by (0<1< ) for d <g/2.
Most commonly used mode is TE01

TE01 mode:
Ez = 0, have azimuthally symmetric (/ = 0) and less than a half cycle variation
along z.
Magnetic wall at r = a.
Nonzero field components E, Hr, and Hz.

Millimeter wave and optical dielectric integrated guides and circuits, S.K. Koul, Wiley.
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Resonators: TE01 Mode


z

So, the simplified wave equation for Hz is

y
d

E, and Hr are calculated as


where

z = d/2

Where A is a constant, J0 and K0 are the Bessel


and the modified Hankel functions of order zero. u
and are the radial and z-directed wavenumbers,
respectively, in region 1. is the z-directed decay
coefficient in regions 2 and 3, and is the radial
decay coefficient in region 4. u, , , and are all
real numbers.
Department of E & ECE, I.I.T. Kharagpur.

z = -d/2

2a

3
@M.K. Mandal

Dielectric Resonators: TE01 Mode


They are related as follows:

where
The other two field components are

z = d/2
z = -d/2

2a
4
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Resonators: TE01 Mode


z

y
d

TE01 mode in a circular


waveguide

E-field lines in z = 0 plane.

|E|

|Hz|

The dielectric resonator.

a
Radius r
H-field lines in meridian plane.

Electric field intensity variation with r.


5

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Resonators: TE01 Mode


Closed form expressions (height d calculation):
Calculate d using the characteristic equation as

where
Calculate from
Calculate u from
where
p01 is the first root of the equation J0(x) = 0.
Calculate effective dielectric constant e = (u/k0)2
where
This relationship hold good for

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Resonators: TE01 Mode


Closed form expressions (resonance frequency f0 calculation):
Calculate f0 from

Calculate k0 from

for

for

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Resonators: TE01 Mode


Q-factor:
0 is the resonant frequency, W is the maximum stored energy,
PL is the total power loss.

Qc conductor quality factor, Qd dielectric quality factor, Qr radiation quality


factor.
In general, Qi = 0W/Pi
Qc
Qd = 1/tan, quite high.
Qr = 20We/Pr, lowest among three.

Closed form expression for Qr:

8
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Resonators: TE01 Mode


4.5

r k0a

4.0

3.5

r =

3.0

80
40
20
2.5

0.2

0.4

0.6

0.8

1.0

d/2a
Normalized resonant wavenumber as a function of aspect ratio d/2a.

K0 and 0 vary inversely with r.


Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Resonators: TE01 Mode


160

d/ 2a
0.8

Approximately

0.3

1.0
0.5

0.5

120

1.0

Qr

0.3

0.6

k0a

80

0.4

0.2

40

20

40

60

80

0
100

r
Normalized resonant wavenumber and radiation Q-factor versus r.

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

10

Dielectric Resonators
HEM11 is the lowest order hybrid mode.
Higher order mode next to TE01 is HE11
Single mode operation bandwidth is maximum for
d/2a 0.4. It can be further increased by using a
ring resonator.
For d/2a 0.4, according to the resonance
frequencies: TE01 HE11 EH11 TM01
The field pattern of TM01 mode is similar to TE01
mode with E and H lines interchanged.
TM01 mode has been used to design dual-mode
filter and dielectric cavity antenna design.

E-field distribution for the


HEM11 mode.

Applications:
Filtering applications (most common are bandpass and bandstop filters),

Oscillators
Frequency-selective limiters,
Dielectric Resonator Antenna (DRA).
Department of E & ECE, I.I.T. Kharagpur.

11
@M.K. Mandal

Dielectric Resonators: Examples

Dielectric Resonator Antenna (DRA)

Filter.

12
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Manifold Coupled Multiplexers

A manifold surface

Photograph of a C-band 10-channel


manifold multiplexer with DR filters.

Layout of a manifold coupled multiplexer.

Measured channel characteristics.


13

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Passive Components: Image Guide


Symmetric parallel-coupled guides:
Ey

y
b

Ey

2a
Image guide

Even mode excitation

Odd mode excitation


Z=0

Even Odd

For a lossless coupled lines


matched at four ports, the voltages
on the lines are

V0/2

-V0/2

V0/2

V0/2

P4

Z=l

VB (z)

P3

B
e, o

P1

P2

VA (z)
Coupled IG

Millimeter wave and optical dielectric integrated guides and circuits, S.K. Koul, Wiley.
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

14

Coupled Image Guide


Then, voltage transmission coefficients are

Let complete power transfer takes place from guide A to B for a length L, then
putting S12 = 0 for l = L:

Therefore,

15
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Coupled Image Guide


For unmatched condition:

where

16
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Image Guide Coupler


P4

P3

2s
z1

l0
P1

2s

2s
z1

z2

z2

P2
IG coupler with straight bends.

At Z2 coupling reduces to a negligibly small value.


P4

2a

P3

2s

z1

l0
P1

2s

z2
R

P2

IG coupler with curved bends.


Department of E & ECE, I.I.T. Kharagpur.

2s

R+a
@M.K. Mandal

17

Image Guide Coupler


Overall S-parameters in terms of effective length lf,
where

where

l0 is the length of straight coupled section, (2L/) is the correction factor due
to connecting arms.
The separation between the incremental coupling lengths in the nonuniformy
coupled region is 2s, where for the straight bends,

18
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Image Guide Coupler


And for the curved bends,

Therefore,

The bandwidth of the coupler, usually, is very small ~ 3%.


Wideband coupler can be designed if (e - o) is independent of frequency
(using an inset).
Effective coupling length decreases for a broadside coupled structure.

19
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Effective coupling length (cm)

Image Guide Coupler

30

= 450, b/(2a) = 3/5,


r = 2.56
0 dB
3 dB

20

S = 1 mm

10
S = 0.5 mm
0

20

40

60

Freq. (GHz)
Effective coupling length vs frequency of an edge
coupled coupler.

20
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Beam-Splitter Type Coupler


Direct coupled

Isolated
P4

900

e1, 1

P3

1 1

z=0
e2, 2

e2> e1

s
z = -s
e1, 1

P1
i/p

P2
Reflected o/p

Beam-splitter coupler.

Equivalent model showing multiple reflections

Basic principle is based on beam-splitting, the incident beam splits into a


reflected beam and a transmitted beam.
If the incident wave is at 450, the reflected wave is at 900.
Inherently broadband. Bandwidth further increases if the gap is filled by a
material with high dielectric constant.

21
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Beam-Splitter Type Coupler


Assuming a plane wave and Ei is perpendicular
to ground plane (yz),

e1, 1

z=0

1 1

e2, 2
z = -s

e1, 1
1

where

E0i

Applying continuity condition at z = 0,


Tangential component

1
n E n E

Department of E & ECE, I.I.T. Kharagpur.

H0r

H0i
1

E0r

e1, 1

e2, 2
2

H0t
E0t
22

@M.K. Mandal

Beam-Splitter Type Coupler


So the Fresnel reflection coefficient,

and the Fresnel transmission coefficient,

At z = 0, a fraction 0 is reflected back and a fraction 1+ 0 is refracted into the


second slab.
Inside the second slab, the refracted ray experiences a phase delay of 2s sec2.
At z = -s, a fraction -0 is reflected back into the second slab and a fraction 1- 0 is
transmitted into the third slab.

23
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Beam-Splitter Type Coupler


So overall reflection coefficient is
where

Now, according to Snells law


Therefore Q reduces to
Therefore
But,

24
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Beam-Splitter Type Coupler


Therefore

Similarly,

The power reflection coefficient has zeros at


And maxima at
The maximum value of |R|2 is
25
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Beam-Splitter Type Coupler: Design Formula


For broadband performance, Q = /2.
Coupling coefficient,
Substituting for 0 in the Fresnel equation,

For 1 = 450,
or
Using the relationship

26
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Image Guide Coupler

z
d
x
h

b
y
2a
Image guide-microstrip coupler.

Wideband and compact design.


The diameter of the ground plane aperture is much smaller than a
wavelength.
Quasi-TEM mode of microstrip line is coupled to TMy mode of the image
guide.
27
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Image Guide: Branching Coupler


y

Lt
P3

P4
L0
s

x
h

Coupling
section

P1

P2

Image guide branching directional coupler.

For a given value of L0 and L, the coupling coefficient depends on the


transition length Lt.

28
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Image Guide: Branching Coupler


P4

1.0

P1

0.04

P2, P4, Pa

P2
0.6
0.4

0.03

Pa

P1, P3

0.8

0.05

0.02

P3
0.2

0.01
0

0
1

Lt /
Dependence of scattered power on transition length.
t = 0.2, s = 0.2, h = 0.3, L = 3, L0 = , r = 2.56.

29
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dielectric Waveguide: Power Divider


Ey

P1

Ey1

Ey3
x

P2
P3
Dielectric waveguide power divider.

Mode distribution inside the coupled


section.

The electric field inside the coupled section is

The coupling factor is

Dielectric waveguide

Required coupling length for 3-dB power division is


30
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

NRD Guide Power Divider


LSM11

LSM11

LSE11

LSM11

LSM11

LSM11

31
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Millimeter Wave Antennas


d0
d1

d1

d0

d0

d1
Tapered dielectric rod antennas.

Tapering: reduces internal reflection from the open end, leaky-wave radiation
along the whole length.

Antenna dimension so chosen that it supports only dominant mode.

Matching transition to avoid surface wave radiation at the feed end.

Design guidelines:

Circular cross section:

Square cross section:


d1 = d1 = 0.2, d0 = d0 = 0.1 - 0.2
L ~ 5-7
Millimeter wave and optical dielectric integrated guides and circuits, S.K. Koul, Wiley.
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

32

Millimeter Wave Antennas

Wave impedance ()

30
30
400
20
300
10
200

10

20

30

40

Distance along transition (mm)

An integrated dielectric rod antenna


excited by NRD guide (x-band).

Plot of wave impedance.

33
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Gap between dielectric and taper (mm)

500

Leaky Wave Grating Antennas

w
z

b
c
a

Rectangular periodic groove in dielectric.

Rectangular periodic groove in metal.

Popular at millimetre wave frequencies.


The periodic modulation creates a guided wave that consists of an infinite
number of space harmonics (Floquet modes).
m = 0 space harmonic is a slow wave.
At least one of the space harmonics (usually the m = -1) is a fast wave that
radiates along the length.
kz is complex.
Different harmonics may have different but the same .
34
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Leaky Wave Grating Antennas


Determination of :

z
w

av

t
b

r
a

3
2
1

t
r

x
x=0

x=L

Side view of the leaky wave antenna.

Calculate the average dielectric constant av.


Or calculate by using a full-wave simulator.
Determination of :
Assuming lateral width is infinite, magnetic field in the three regions

j = 1, 2, 3 and Imj - magnetic field amplitude of the mth space harmonic, kxm x-directed wavenumber.

35

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Leaky Wave Grating Antennas

where kx0, and corresponds to dominant mode (m = 0).


Leaky-wave beam:
d is chosen such that
For small c, leakage is small, kx0 is almost real.
mth leaky-wave beam w.r.t. boreside direction,

For single beam operation, only m = -1 harmonic should radiates. In that case,

L required for a given ,

36
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Millimeter Wave Antennas


P

y
r

x
x=L
Antenna aperture
plane at z = t.

y= -W/2
z
w

3
2
1

t
r

x
x=0

x=L

Side view of the leaky wave antenna.


F.K. Schwering and S.T. Peng, Design of dielectric grating antennas for millimeter-wave applications,
IEEE trans on MTT, Feb., 1983.
37
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Millimeter Wave Antennas


TM mode

102

80

d = 0.25
c = 0.125
t = 0.05

60

-1

-1 (deg)

40

20
0.15

0.20

0.25

0.30

b /
Variation of radiation rate and scan angle with b.

Antenna parameters: d = 0.25, c = 0.5d, t = 0.05, b = 0.21 (peak), r = 12.


38
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Millimeter Wave Antennas

Leaky wave antennas with periodic conducting strips.

Radiation from each element is small.


Large strip width increases mismatch increases side lobe levels.
Length is so selected that all incident power is radiated.
Metal flare can be used to increase the gain and decrease the side lobes levels.

39
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Millimeter Wave Antennas


Radiated
wave
Reflected
transmitted
wave
wave
Incident
wave

Zd
Rr

Cd

g, Zg

g
Ground plane groove.

Equivalent circuit.

E-plane pattern

Grating antenna with varying groove thicknesses.


40
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Millimeter Wave Antennas

Rr

Cd

g, Zg

g
Ground plane groove.

Single groove is modeled by a slot backed by a s/c.


Rr radiation resistance (f(g, r)), Cd stored energy near the discontinuity,
g propagation const., Zg wave impedance.
Circular hole can be used (dimension is so chosen that f0 is below the
waveguide cutoff)
2d array should be used to obtain a narrow beamwidth in H-plane.

41
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Resonant Antennas
d2
Main beam

z
d1

b
a
Array of resonant slots.

Circularly polarized array.

The slots are approximately half-wavelength.


The image guide excited in Ey11 mode.
Axial ratio depends on (slot orientation angle with the axis) and d1.

Condition for circular polarization: tan cos 0 cot

k d / 2 sin
0 1

0 /

The main beam direction: 0 sin 1 0 / 1 / d2


42
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

SINRD Leaky Wave Antenna

Top plate slot.

Internal configuration.

S-parameters plots (LSM11).


P. Mondal and K. Wu, A leaky-wave antenna in SINRD waveguide with controllable scanning rate,
IEEE trans on AP, April, 2013.
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

43

Millimeter Wave Antennas


Direction of maximum radiation from
broadside direction:

Variation of scan angle.

E-plane pattern.
H-plane pattern.
44
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Millimeter Wave Antennas


y

Sn

Insular image guide feed resonant dipole array.

Angle (deg)

18
14
10
6

33

Radiation pattern@35.5 GHz.

35
Freq (GHZ)

Frequency scanning.

Photograph (alumina).

M.T. Birand and R.V. Gelsthorpe Experimental millimetric array using dielectric radiators fed by means
of dielctric waveguide, IET Elec. Lett., Jun., 1981.
45
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Printed Millimeter Wave Antennas


Problems:
Increased losses: For a microstrip line, conductor loss
and dielectric loss
Choice of a substrate: coupling with substrate modes and antenna efficiency.
Efficiency decreases with
increasing r.

A typical patch antenna @60 GH on a substrate with the same thickness


provides
60% efficiency on a 5880 (r = 2.23),

25% efficiency on an Alumina substrate (r = 9.5).

Advanced Millimeter-Wave Technologies, D. Liu, B. Gaucher, U. Pfeiffer, J. Grzyb, Wiley.


Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

46

Printed Millimeter Wave Antennas


Frequency variation of substrate parameters:
Quartz substrate

Rt/duroid 6010

S21 (dB)

Rt/duroid 5880
-2

-4
1

21
41
Frequency (GHz)

61

S21 of a 20 mm long microstrip line on a 35NQ


substrate.
47
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Printed Millimeter Wave Antennas


Feed line influence on radiation pattern:
Spurious radiation from the feed structures.
Can be solved by using multilayer technology (feed structure in different layer,
active components also can be accommodated).

With T

Without T

Measured H-plane radiation pattern @38.6 GHz


(dotted line without T).
48

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Printed Millimeter Wave Antennas

An 16x16 array on 0.254 mm


thick Rt/duroid 5880 substrate
@40 GHz.

H-plane co-polar (solid) and cross-polar (dashed)


radiation patterns @40 GHz.

This array antenna has higher cross-polarization levels.

49
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Printed Millimeter Wave Antennas

Feed network on the same


5880 substrate @60 GHz.

H-plane co-polar (solid) and cross-polar (dashed)


radiation patterns @60 GHz.

An 16x16 array coupled to


feed network by GPA.
Department of E & ECE, I.I.T. Kharagpur.

50
@M.K. Mandal

Printed Millimeter Wave Antennas


Multi-layer interconnects:
Aperture /slot coupling,
coaxial transition.

Microstrip-to-microstrip slot transition.

Bandwidth of the transition improves with Hshape slot as GPA.


0

|S21|, |S11| (dB)

|S21|

Microstrip-to-patch aperture coupling.

-10

|S11|

-20

-30
45

Microstrip-to-microstrip coaxial
transition.
47

51
49
Frequency (GHz)

53

55

Measured S21 of a transition using H-shape slots.


51
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Printed Millimeter Wave Array Antennas


Directive pattern with passive linear array:

Configuration of the feed network, radiating patches on a second layer.

Feed line designed on a 0.127 mm thick TPX substrate (r = 2.17).


A thick copper common ground plane ( t = 0.2 mm) for mechanical rigidity.
Amplitude tapering for low side-lobe levels.
55% efficiency at 59.5 GHz.
0
11
Gain (dB)

Power (dB)

-20

-40
-900

S11 (dB)

00

900

angle

5
56

58

60

Freq. (GHz)

-20

-40
54

58
Freq. (GHz)

62

52
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Printed Millimeter Wave Array Antennas


Sector beam with linear array:
Approximately constant gain across a wide angular region.

Configuration of the feed network.

0.127 mm thick Rt/duroid 5880 and the


thick ground plane.
Amplitude and phase distribution for the
required pattern and low side-lobes.

Power (dB)

-20

55% efficiency at 59.5 GHz.


-40 0
-90

00
angle

900

53
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Printed Millimeter Wave Array Antennas


Cosecant beam with linear array:
Simultaneous uniform illumination of several base stations of varying distances.
Amplitude and phase distribution for the required pattern and low side-lobes.
0.127 mm thick Rt/duroid 5880 and the thick ground plane.

Power (dB)

-20

-40 0
-90

Indoor communication with different


wireless devices at varying distances.

00
angle

900

Radiation pattern of a typical array


antenna@60 GHz.
54

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Waveguide Slot Arrays


a

Induced current in the slot:


b

E0
x j
Jx j
cos
e
2 f a
a

k 2 a z
2

E0
2
x j
Jz
k 2 a z sin
e
2 f a
a

z
x

k 2 a z
2

Radiation occurs because of Jx.


Radiated power is a function of sin2

Some popular slot array antennas.


55
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Waveguide Slot Arrays


l
w

A slot in an infinite ground plane.

H field distribution inside the slot.

ln

Length of the equivalent rectangular


slot is

leq l

24
7

w
Equivalent rectangular slot.

For both of the slots, resonance frequency and bandwidth increase with
increasing w.
Thickness of the metallic sheet also influence the slot resonance frequency.
Individual slot is represented by a shunt admittance, a function of slot offset.
56
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays


Leaky wave antenna:

Basic leaky-wave antenna.

Tangential electric field in the first slot Et z cos x / L


Complex propagation constant

kz j

J. Liu et. al. Substrate integrated waveguide leaky-wave antenna with transverse slots, IEEE trans on
AP., Jan, 2012.
57
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays


Then, for nth slot,

2
2

sinc k znW / 2 k1

W
n
m 1,3,5

eff

where

cos 2 m L 2Weff cot k ymn1h


2
rWeff

j
In
2
2 2
2 2
16
L
h

1 m L Weff k ymn1h

2 L2
(2) k pn Lr

2 L2

I n k0 2 1 r cos r k0 2 1 sin r H 0
dr

k zn k 2n / p
k pn k02 k zn2

k ymn1 k12 m / Weff

k zn2 .

k1 k0 r 1 j tan
J. Liu et. al. Substrate integrated waveguide leaky-wave antenna with transverse slots, IEEE trans on
AP., Jan, 2012.
58
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays


w/g only

Conductor loss
0.016
= k0

0.6

Slotted w/g

Dielectric loss
Leakage loss

/k0

/k0

0.008

0.2
0
10

12
11
Frequency (GHz)

Normalized phase constant.

10

11
10.5
Frequency (GHz)

11.5

Normalized attenuation constant.

Substrate: h = 1 mm, r = 2.25, tan = 0.001.


W = 10.5 mm, Wslot = 0.45 mm, p = 2.5 mm (~900).
59
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays

Configuration of the antenna.

Substrate: h = 1 mm, r = 2.25, tan = 0.001.


Antenna dimension: L1 = 180 mm, L2 = 30 mm,
W = 10.5 mm, Wslot = 0.45 mm, p = 2.5 mm
(~900).

S-parameters (dB)

0
S21
-10
-20

S11

-30

10

12
11
Frequency (GHz)

Input matching.
60
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays


2d linear array:
Gain (dB)

24

22
20
18
59

60

61

62

Freq (GHz)

The 2d slot array antenna.

Slot width 0.18 mm, length 2.56 mm.


Feed network consists of 1:12 power
divider.

S11 (dB)

0
-10

-20
59

60

61

62

Freq (GHz)

Gain and input matching with freq.

X.P. Chen et. al., Low-cost high gain planar antenna array for 60-GHz band applications, IEEE trans on
AP., Jun., 2010.
61
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays


0
Relative gain (dB)

Relative gain (dB)

-10

-20

-30

-40

-80

-40

40

-20

-40

-80

80

40

80

Angle (deg)

Angle (deg)

Measured E-plane pattern @60.5 GHz.

-40

Measured H-plane pattern @60.5 GHz.

Fabricated on a Rt/duroid 6002,


Maximum gain 22 dBi, efficiency 68%.

62
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays


Sector beam array:
20

Gain (dB)

10

0
-10
-20
-120

Length of the ith element is

li lNx N x i

0
Angle (deg)

120

Measured gain @62.5


GHz.

Element spacing is 900 to cancel reflection.

1.2 mm thick PTFE substrate (r = 2.17, tan = 0.001)


M. Ohira, A. Miura, and M. Ueba, 60 GHz wideband substrate-integrated waveguide slot array using
closely spaced elements for planar multisector antenna, IEEE trans on AP., Mar., 2010.
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

63

Planar Waveguide Type Slot Arrays


Cavity antenna:

Open-ended cavity feeding scheme.

0.635 mm thick RO3006 substrate (r =


6.15, tan = 0.0025)
A 60 GHz 2x2 array antenna.

Y. Zhang et. al. Wideband millimeter-wave substrate integrated waveguide slotted narrow-wall fed cavity
antennas, IEEE trans on AP., May, 2011.
64
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Planar Waveguide Type Slot Arrays


12

-10

Gain (dBi)

|S11| (dB)

-20

10

-30

54

58
62
Frequency (GHz)

Input matching.

E-plane @58 GHz


Department of E & ECE, I.I.T. Kharagpur.

66

61
57
Frequency (GHz)

65

Gain variation.

H-plane @58 GHz


@M.K. Mandal

65

Butler Matrix

A 4x4 butler matrix.

Phase shifter and the cross over.

Photograph of the final design.

C.-J. Chen, and T.-H. Chu, Design of a 60-GHz substrate integrated waveguide butler matrixa
systematic approach IEEE MTT, Jul. 2010.
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

66

On Chip Antennas
Frequency band of interest:
Unlicensed bands 24.05-24.25 GHz (K), 59-64 GHz (V) (industrial,
scientific and medical).
Licensed bands 77 (76-77 and 78-81) GHz, 94 GHz (W).
Applications:
Low cost, short range consumer products (Indoor computer networks etc)
Automotive radar, imaging.
Advantages:
Low cost, compact, mismatch problems can be avoided.
Other issues:
Loss (semiconductor substrate is a poor dielectric).
Selection of radiator (size reduction at lower frequency affects gain).
Packaging issues.

Crosstalk in a transceiver system.


Advanced Millimeter-Wave Technologies, D. Liu, B. Gaucher, U. Pfeiffer, J. Grzyb, Wiley.
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

67

On Chip Antennas: Challenges


Antenna size:
a

An on-chip antenna.

Electrically small antennas are smaller than the radian sphere. The radius of
the radian sphere:

1 0

k 2

Then obtainable minimum quality factor:

Qrad

1
1
3 3.
ka k a

Higher bandwidth antenna has lower antenna efficiency.


68
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

On Chip Antennas: Challenges


Substrate mode:
Cutoff frequency of conductor backed substrate modes:

fc

nc
4d r 1

n 0,1, 2...

At lower frequencies, the chip size is less than power coupled to substrate
is radiated from the substrate edges.

~95% power coupled to Si-substrate.

Excitation of substrate modes.

69
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

On Chip Antennas: Challenges


Antenna efficiency:
GaAS and InP provides lower losses compared to SiGe substrate.
Antenna efficiency is typically below 10% on low resistivity Si substrate
(used in CMOS tech typically = 10-50 .cm).
Selective micromachining, or Si-on-insulator (SOI)/ Si-on-sapphire (SOP)
can be used to improve the efficiency.
Fused silica (r = 3.8, tan 0.0015) and high resistivity Si (r = 3.8, > 1
k.cm, tan 0.002) provides better antenna efficiency.

SiO2
Si

Matching
layer

Use of reflector (at high frequency)

Substrate
wave

Back side

Backside radiation (at high frequency)


70

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Improvement of Antenna (on Chip) Efficiency


Antenna

Antenna
Active elements

Thick organic layer

Active elements

High resistivity Si

Standard Si

I. High resistivity Si
substrate.

II. Thick layer low loss


organic substrate.

Antenna

Thick organic layer


Active elements
Micromachined Si

III. Micromachined Sisubstrate.

I. High resistivity substrate provides lower losses.


Proton implantation technique can be used in selected substrate area to increase
the resistivity for CMOS /BiCMOS technology.
II. Thick organic layer (eg. BCB, polyimide have low loss but also low r) reduces
losses to some extent.
III. Bulk micromachining can be used in selected regions to decrease loss as well
as to reduce the problem of substrate mode excitation.
Both wet etching and dry etching techniques are used.

71
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Selection of On Chip Radiator


Silicon active device process (low resistivity) , does not provide substrate
backside metallization.
Problem for microstrip lines.
Differential circuit topology/ CPW lines are preferred.
GaAs, InP technology, usually, provides backside metallization.
Electrically small antennas for lower frequencies.
Thin substrates for higher frequencies.
Available space for antenna.

Feed Lines:
Difficult to design any microstrip line on a thick substrate with high r.
Example: on a 250 m fused silica, required width of a 50 line is 690 m (g/4 at
60 GHz 680 m).

Suggested values: Z0(CPS) > 70 and Z0(CPW)> 50.


Condition to avoid surface wave loss:
Metal roughness should be properly modeled.
72
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Patch Antennas
On conductor backed thin substrate only. Gain increases by 3 dB.

Length of the patch: L

1
2 f r eff

0 0

2L

L correction term because of fringing fields.

A 24 GHz patch antenna.


73
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Dipole and Slot Antennas


Dipole is sensitive to presence of other metallic objects in its vicinity.
Metal plane supporting the slot might be large enough.

Dipole and slot antennas.

Size reduction scheme of dipole antennas.

A 24 GHz dipole antenna.


74

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Folded Dipole Antennas


S11 (dB)

-10

-20

20

A folded top-loaded 24 GHz dipole on Si/Ge.

E-plane pattern.

22 24 26
Freq. (GHz)

Input matching.

H-plane pattern (max gain = -2 dBi).


75

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Loop Antennas

Wire loop.

Slot loop.

A low loss insulating layer such as BCB is used below the loop.
The directivity of 1 loop ~ 3.3 dBi. But typical measured gain < 0 dBi.
Slot loop: ground plane resonance can increase the bandwidth.
To avoid coupling with substrate modes with CPW mode, f should be below fc

2 c 1
n
tan
A

r 1 h
2

A r for TM and A 1 for TE, n 0,1, 2,3...


,

for ground backed CPW, n is odd for TE and n is even for TM.
fc

76
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Loop Antennas

S11 (dB)

-1

-4

-7
20

A typical slot loop antenna


and oscillator @ 35 GHz.

E-plane.

30
Freq. (GHz)

40

Input matching.

H-plane.
77

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Circuit Integration

Radiator placement.

The radiator in top metal layer (top metal layer is the thickest one).
Usually, antenna is placed in a different part of the chip.
Oxide layers are so thin that cannot be used as a substrate.
Any metallization below the radiator should be removed.
Ground shield should be used for other large passive components (eg.
spiral inductors).
LO leakage.
78
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Circuit Integration

A transceiver system @ 24 GHz.

In the transmitting side: antenna gain ~ -7.5 dBi.


Receiving antenna input impedance ~ 70 + j40 to match the LNA input
impedance.
Receiving antenna gain ~ -2 dBi.

79
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Packaging Issues

Antenna packaging.

Packaging might be transparent to radiation.


Materials used for packaging are usually lossy.
Bonding wires, foils, plating, soldering etc can degrade antenna
performance.
Substrate modes and other higher order modes due to packaging can
degrade the performance of active devices : metal rings or cavities might
have to be used.
80
Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Packaging Issues
Glob-top encapsulation can be used as antenna lens.
Any metallization used for packaging can be used to improve the antenna
properties.

Interconnects:
Bond wires can be used at lower frequencies to connect antenna with the chip.
Bond wires are lossy at high frequencies.
At high frequencies, Flip chip attachment is preferred over wire bonding (small
inductance, robust, low cost).
metal

Flip-chip attachment.

Wire bond transition.


81

Department of E & ECE, I.I.T. Kharagpur.

@M.K. Mandal

Antenna as a Part of Packaging


interconnect

Bond wire

Antenna substrate

IC
Package lead

Ground/ package base

Antenna configuration.

Conceptual drawing.
Department of E & ECE, I.I.T. Kharagpur.

82
@M.K. Mandal

Antenna as a Part of Packaging


Metal bar
substrate

Antenna surrounded by a cavity.

Photograph of the antenna @60 GHz.

Gain (dBi)

7
5
3
50

55
60
Freq. (GHz)

Measured gain.
Department of E & ECE, I.I.T. Kharagpur.

65

Photograph of the antenna(top view).


83
@M.K. Mandal

Thank you

?
mkmandal@ece.iitkgp.ernet.in
mkmandal@ieee.org
Ph. +91-3222-283550 (o)
Department of E. & E.C.E.
I.I.T. Kharagpur, 721302.

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