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Dielectric Resonators
Materials: usually ceramic with high r (10-100).
d
a
Isolated dielectric
resonator
TE01 mode:
Ez = 0, have azimuthally symmetric (/ = 0) and less than a half cycle variation
along z.
Magnetic wall at r = a.
Nonzero field components E, Hr, and Hz.
Millimeter wave and optical dielectric integrated guides and circuits, S.K. Koul, Wiley.
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
y
d
z = d/2
z = -d/2
2a
3
@M.K. Mandal
where
The other two field components are
z = d/2
z = -d/2
2a
4
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
y
d
|E|
|Hz|
a
Radius r
H-field lines in meridian plane.
@M.K. Mandal
where
Calculate from
Calculate u from
where
p01 is the first root of the equation J0(x) = 0.
Calculate effective dielectric constant e = (u/k0)2
where
This relationship hold good for
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Calculate k0 from
for
for
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8
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
r k0a
4.0
3.5
r =
3.0
80
40
20
2.5
0.2
0.4
0.6
0.8
1.0
d/2a
Normalized resonant wavenumber as a function of aspect ratio d/2a.
@M.K. Mandal
d/ 2a
0.8
Approximately
0.3
1.0
0.5
0.5
120
1.0
Qr
0.3
0.6
k0a
80
0.4
0.2
40
20
40
60
80
0
100
r
Normalized resonant wavenumber and radiation Q-factor versus r.
@M.K. Mandal
10
Dielectric Resonators
HEM11 is the lowest order hybrid mode.
Higher order mode next to TE01 is HE11
Single mode operation bandwidth is maximum for
d/2a 0.4. It can be further increased by using a
ring resonator.
For d/2a 0.4, according to the resonance
frequencies: TE01 HE11 EH11 TM01
The field pattern of TM01 mode is similar to TE01
mode with E and H lines interchanged.
TM01 mode has been used to design dual-mode
filter and dielectric cavity antenna design.
Applications:
Filtering applications (most common are bandpass and bandstop filters),
Oscillators
Frequency-selective limiters,
Dielectric Resonator Antenna (DRA).
Department of E & ECE, I.I.T. Kharagpur.
11
@M.K. Mandal
Filter.
12
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
A manifold surface
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y
b
Ey
2a
Image guide
Even Odd
V0/2
-V0/2
V0/2
V0/2
P4
Z=l
VB (z)
P3
B
e, o
P1
P2
VA (z)
Coupled IG
Millimeter wave and optical dielectric integrated guides and circuits, S.K. Koul, Wiley.
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
14
Let complete power transfer takes place from guide A to B for a length L, then
putting S12 = 0 for l = L:
Therefore,
15
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
where
16
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
P3
2s
z1
l0
P1
2s
2s
z1
z2
z2
P2
IG coupler with straight bends.
2a
P3
2s
z1
l0
P1
2s
z2
R
P2
2s
R+a
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17
where
l0 is the length of straight coupled section, (2L/) is the correction factor due
to connecting arms.
The separation between the incremental coupling lengths in the nonuniformy
coupled region is 2s, where for the straight bends,
18
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Therefore,
19
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
30
20
S = 1 mm
10
S = 0.5 mm
0
20
40
60
Freq. (GHz)
Effective coupling length vs frequency of an edge
coupled coupler.
20
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Isolated
P4
900
e1, 1
P3
1 1
z=0
e2, 2
e2> e1
s
z = -s
e1, 1
P1
i/p
P2
Reflected o/p
Beam-splitter coupler.
21
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
e1, 1
z=0
1 1
e2, 2
z = -s
e1, 1
1
where
E0i
1
n E n E
H0r
H0i
1
E0r
e1, 1
e2, 2
2
H0t
E0t
22
@M.K. Mandal
23
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
24
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Similarly,
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For 1 = 450,
or
Using the relationship
26
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
z
d
x
h
b
y
2a
Image guide-microstrip coupler.
@M.K. Mandal
Lt
P3
P4
L0
s
x
h
Coupling
section
P1
P2
28
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
1.0
P1
0.04
P2, P4, Pa
P2
0.6
0.4
0.03
Pa
P1, P3
0.8
0.05
0.02
P3
0.2
0.01
0
0
1
Lt /
Dependence of scattered power on transition length.
t = 0.2, s = 0.2, h = 0.3, L = 3, L0 = , r = 2.56.
29
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
P1
Ey1
Ey3
x
P2
P3
Dielectric waveguide power divider.
Dielectric waveguide
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LSM11
LSE11
LSM11
LSM11
LSM11
31
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
d1
d0
d0
d1
Tapered dielectric rod antennas.
Tapering: reduces internal reflection from the open end, leaky-wave radiation
along the whole length.
Design guidelines:
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32
Wave impedance ()
30
30
400
20
300
10
200
10
20
30
40
33
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
500
w
z
b
c
a
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z
w
av
t
b
r
a
3
2
1
t
r
x
x=0
x=L
j = 1, 2, 3 and Imj - magnetic field amplitude of the mth space harmonic, kxm x-directed wavenumber.
35
@M.K. Mandal
For single beam operation, only m = -1 harmonic should radiates. In that case,
36
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
y
r
x
x=L
Antenna aperture
plane at z = t.
y= -W/2
z
w
3
2
1
t
r
x
x=0
x=L
@M.K. Mandal
102
80
d = 0.25
c = 0.125
t = 0.05
60
-1
-1 (deg)
40
20
0.15
0.20
0.25
0.30
b /
Variation of radiation rate and scan angle with b.
@M.K. Mandal
39
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Zd
Rr
Cd
g, Zg
g
Ground plane groove.
Equivalent circuit.
E-plane pattern
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Rr
Cd
g, Zg
g
Ground plane groove.
41
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Resonant Antennas
d2
Main beam
z
d1
b
a
Array of resonant slots.
k d / 2 sin
0 1
0 /
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Internal configuration.
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43
E-plane pattern.
H-plane pattern.
44
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Sn
Angle (deg)
18
14
10
6
33
35
Freq (GHZ)
Frequency scanning.
Photograph (alumina).
M.T. Birand and R.V. Gelsthorpe Experimental millimetric array using dielectric radiators fed by means
of dielctric waveguide, IET Elec. Lett., Jun., 1981.
45
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
@M.K. Mandal
46
Rt/duroid 6010
S21 (dB)
Rt/duroid 5880
-2
-4
1
21
41
Frequency (GHz)
61
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With T
Without T
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49
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
50
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|S21|
-10
|S11|
-20
-30
45
Microstrip-to-microstrip coaxial
transition.
47
51
49
Frequency (GHz)
53
55
@M.K. Mandal
Power (dB)
-20
-40
-900
S11 (dB)
00
900
angle
5
56
58
60
Freq. (GHz)
-20
-40
54
58
Freq. (GHz)
62
52
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Power (dB)
-20
00
angle
900
53
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Power (dB)
-20
-40 0
-90
00
angle
900
@M.K. Mandal
E0
x j
Jx j
cos
e
2 f a
a
k 2 a z
2
E0
2
x j
Jz
k 2 a z sin
e
2 f a
a
z
x
k 2 a z
2
@M.K. Mandal
ln
leq l
24
7
w
Equivalent rectangular slot.
For both of the slots, resonance frequency and bandwidth increase with
increasing w.
Thickness of the metallic sheet also influence the slot resonance frequency.
Individual slot is represented by a shunt admittance, a function of slot offset.
56
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
kz j
J. Liu et. al. Substrate integrated waveguide leaky-wave antenna with transverse slots, IEEE trans on
AP., Jan, 2012.
57
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
2
2
sinc k znW / 2 k1
W
n
m 1,3,5
eff
where
j
In
2
2 2
2 2
16
L
h
1 m L Weff k ymn1h
2 L2
(2) k pn Lr
2 L2
I n k0 2 1 r cos r k0 2 1 sin r H 0
dr
k zn k 2n / p
k pn k02 k zn2
k zn2 .
k1 k0 r 1 j tan
J. Liu et. al. Substrate integrated waveguide leaky-wave antenna with transverse slots, IEEE trans on
AP., Jan, 2012.
58
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Conductor loss
0.016
= k0
0.6
Slotted w/g
Dielectric loss
Leakage loss
/k0
/k0
0.008
0.2
0
10
12
11
Frequency (GHz)
10
11
10.5
Frequency (GHz)
11.5
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S-parameters (dB)
0
S21
-10
-20
S11
-30
10
12
11
Frequency (GHz)
Input matching.
60
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
24
22
20
18
59
60
61
62
Freq (GHz)
S11 (dB)
0
-10
-20
59
60
61
62
Freq (GHz)
X.P. Chen et. al., Low-cost high gain planar antenna array for 60-GHz band applications, IEEE trans on
AP., Jun., 2010.
61
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
-10
-20
-30
-40
-80
-40
40
-20
-40
-80
80
40
80
Angle (deg)
Angle (deg)
-40
62
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Gain (dB)
10
0
-10
-20
-120
li lNx N x i
0
Angle (deg)
120
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63
Y. Zhang et. al. Wideband millimeter-wave substrate integrated waveguide slotted narrow-wall fed cavity
antennas, IEEE trans on AP., May, 2011.
64
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
-10
Gain (dBi)
|S11| (dB)
-20
10
-30
54
58
62
Frequency (GHz)
Input matching.
66
61
57
Frequency (GHz)
65
Gain variation.
65
Butler Matrix
C.-J. Chen, and T.-H. Chu, Design of a 60-GHz substrate integrated waveguide butler matrixa
systematic approach IEEE MTT, Jul. 2010.
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
66
On Chip Antennas
Frequency band of interest:
Unlicensed bands 24.05-24.25 GHz (K), 59-64 GHz (V) (industrial,
scientific and medical).
Licensed bands 77 (76-77 and 78-81) GHz, 94 GHz (W).
Applications:
Low cost, short range consumer products (Indoor computer networks etc)
Automotive radar, imaging.
Advantages:
Low cost, compact, mismatch problems can be avoided.
Other issues:
Loss (semiconductor substrate is a poor dielectric).
Selection of radiator (size reduction at lower frequency affects gain).
Packaging issues.
@M.K. Mandal
67
An on-chip antenna.
Electrically small antennas are smaller than the radian sphere. The radius of
the radian sphere:
1 0
k 2
Qrad
1
1
3 3.
ka k a
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fc
nc
4d r 1
n 0,1, 2...
At lower frequencies, the chip size is less than power coupled to substrate
is radiated from the substrate edges.
69
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
SiO2
Si
Matching
layer
Substrate
wave
Back side
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Antenna
Active elements
Active elements
High resistivity Si
Standard Si
I. High resistivity Si
substrate.
Antenna
71
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Feed Lines:
Difficult to design any microstrip line on a thick substrate with high r.
Example: on a 250 m fused silica, required width of a 50 line is 690 m (g/4 at
60 GHz 680 m).
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Patch Antennas
On conductor backed thin substrate only. Gain increases by 3 dB.
1
2 f r eff
0 0
2L
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-10
-20
20
E-plane pattern.
22 24 26
Freq. (GHz)
Input matching.
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Loop Antennas
Wire loop.
Slot loop.
A low loss insulating layer such as BCB is used below the loop.
The directivity of 1 loop ~ 3.3 dBi. But typical measured gain < 0 dBi.
Slot loop: ground plane resonance can increase the bandwidth.
To avoid coupling with substrate modes with CPW mode, f should be below fc
2 c 1
n
tan
A
r 1 h
2
for ground backed CPW, n is odd for TE and n is even for TM.
fc
76
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Loop Antennas
S11 (dB)
-1
-4
-7
20
E-plane.
30
Freq. (GHz)
40
Input matching.
H-plane.
77
@M.K. Mandal
Circuit Integration
Radiator placement.
The radiator in top metal layer (top metal layer is the thickest one).
Usually, antenna is placed in a different part of the chip.
Oxide layers are so thin that cannot be used as a substrate.
Any metallization below the radiator should be removed.
Ground shield should be used for other large passive components (eg.
spiral inductors).
LO leakage.
78
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Circuit Integration
79
Department of E & ECE, I.I.T. Kharagpur.
@M.K. Mandal
Packaging Issues
Antenna packaging.
@M.K. Mandal
Packaging Issues
Glob-top encapsulation can be used as antenna lens.
Any metallization used for packaging can be used to improve the antenna
properties.
Interconnects:
Bond wires can be used at lower frequencies to connect antenna with the chip.
Bond wires are lossy at high frequencies.
At high frequencies, Flip chip attachment is preferred over wire bonding (small
inductance, robust, low cost).
metal
Flip-chip attachment.
@M.K. Mandal
Bond wire
Antenna substrate
IC
Package lead
Antenna configuration.
Conceptual drawing.
Department of E & ECE, I.I.T. Kharagpur.
82
@M.K. Mandal
Gain (dBi)
7
5
3
50
55
60
Freq. (GHz)
Measured gain.
Department of E & ECE, I.I.T. Kharagpur.
65
Thank you
?
mkmandal@ece.iitkgp.ernet.in
mkmandal@ieee.org
Ph. +91-3222-283550 (o)
Department of E. & E.C.E.
I.I.T. Kharagpur, 721302.