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Laboratory 5: Device

characteristics of nMOSFET
Group -5
Group Member Vikram Paliwal (B12051)

Rahul

Kumar (B12089)
Kartik Jain (B12056)
Subhash Kumar (B12073)

Objective- Find nMosfet (IRF 520) device characteristic

Determine the threshold voltage (Vth)


Plot Id (drain current) vs. Vds ( at different Gate Voltage)
Determine the saturation voltage (Vd,sat) and
transconductance parameter of the MOSFET

Theory The metal-oxide-semiconductor field is type of


device used for amplifying or switching electronic signals.
Mosfet is a semiconductor device with four terminal (Gate,
Source, Drain and Substrate).
The drain and source terminals are connected to the heavily
doped regions. The gate terminal is connected top on the oxide
layer and the substrate or body terminal is connected to the
intrinsic semiconductor.
The Symbols and basic construction for nMosfet is Shown below
-

MOSFET has four terminals which is already stated above, they


are gate, source drain and substrate or body. MOS capacity
present in the device is the main part. The conduction and
valance bands are position relative to the Fermi level at the
surface is a function of MOS voltage. The metal of the gate
terminal and the sc acts the parallel and the oxide layer acts as
insulator of the state MOS capacitor. Between the drain and
source terminal inversion layer is formed and due to the flow of
carriers in it, the current flows in MOSFET the inversion layer is
properties are controlled by gate voltage. Thus it is a voltage
controlled device.

The four MOSFET symbols above show an additional terminal


called the Substrate and is not normally used as either an input
or an output connection but instead it is used for grounding the
substrate. It connects to the main semiconductive channel
through a diode junction to the body or metal tab of the
MOSFET.
Working of a nMosfet- The drain and source are heavily doped
n+ region and the substrate is p-type. The current flows due to
flow of the negatively charged electrons, thats why it is known
as n- channel MOSFET. When we apply the positive gate voltage
the holes present beneath the oxide layer experiences
repulsive force and the holes are pushed downwards in to the
bound negative charges which are associated with the acceptor

atoms. The positive gate voltage also attracts electrons from


n+ source and drain region in to the channel thus an electron
reach channel is formed, now if a voltage is applied between
the source and drain. The gate voltage controls the electron
concentration in the channel n-channel MOSFET is preferred
over p-channel MOSFET as the mobility of electrons are higher
than holes.
Threshold Voltage of a mosfet- The threshold voltage (Vth or VGS
(th)), of a Mosfet is the minimum gate-to-source voltage
differential that is needed to create a conducting path between
the source and drain terminals.

MOSFETs have the ability to operate within three different


regions:

1. Cut-off Region with VGS < Vthreshold the gate-source voltage is


lower than the threshold voltage so the MOSFET transistor is
switched fully-OFF and IDS = 0, the transistor acts as an open
circuit.

2. Linear (Ohmic) Region with VGS > Vthreshold and VDS > VGS the
transistor is in its constant resistance region and acts like a variable
resistor whose value is determined by the gate voltage, VGS.

3. Saturation Region with VGS > Vthreshold the transistor is in its

constant

current

region

and

is

switched

fully-ON.

The

current IDS = maximum as the transistor acts as a closed circuit.

Saturation Voltage of a Mosfet- with VGS > Vthreshold the transistor is


in its constant current region, minimum Drain Voltage which switch
mosfet to saturation region from active region. It is required to do
amplification (because amplification work at saturation region).

Saturation Voltage is different for different Gate Voltage(VGS > Vthreshold ).

Transconductance property of a MosfetTransconductance is the ratio of the current variation at the output to
the

voltage

at

the

input.

We can find out transconductance using slope of drain current vs


gate voltage.

Experiment Circuit-

We use IRF520 nMosfet for the experiment.


We connect a resistance of 3.3k value to drain to measure
Drain Current.
We can connect a resistance to gate (but we didnt ).
We use Function Generator and supply to give input in Mosfets
Drain and Source pin.

Now to find out Threshold Voltage we fixed the Drain Voltage


and Vary the gate voltage and see which gate voltage we gate
Drain current.
Vd
2v
2.5v
3v
So We get Threshold voltage VT=2.8v

VT
2.8v
2.8v
2.8v

Now to see I-V characteristic of a Mosfet we should give Gate


Voltage (>Threshold Voltage) so we took gate voltage (>2.8v).

Now from above data and plot we can say that we have
different saturation voltage for different applied Gate voltage
Vgate
3v
3.2v
3.4v

Vsat
0.3v
0.6v
1.8v

From above plot we can find out the transconductance value


=0.0065 (ohm)-1

Conclusion- We need a Gate voltage (> Threshold voltage) to change


the Mosfet to active region from cut-off region.
- I-V characteristic shows that first mosfet work in linear
region (active region) and then reach saturation.
- For Different Gate voltage we get different Saturation
voltage.

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