Philips Semiconductors

Product specification

Triacs
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.

PINNING - TO92
PIN

BT131 series

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX. MAX. UNIT

VDRM
IT(RMS)
ITSM

BT131Repetitive peak off-state voltages

RMS on-state current
Non-repetitive peak on-state current

PIN CONFIGURATION

500
500
1
16

600
600
1
16

V
A
A

SYMBOL

DESCRIPTION

main terminal 2

gate

main terminal 1

T2

T1

3 2 1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

VDRM

Repetitive peak off-state

voltages

IT(RMS)
ITSM

RMS on-state current

Non-repetitive peak
on-state current

I2t
dIT/dt

IGM
VGM
PGM
PG(AV)
Tstg
Tj

I2t for fusing

Repetitive rate of rise of
on-state current after
triggering

Peak gate current

Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature

CONDITIONS

MIN.
-

full sine wave; Tlead 51 C

full sine wave; Tj = 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/s
T2+ G+
T2+ GT2- GT2- G+

over any 20 ms period

MAX.
-500
5001

UNIT
-600
6001

16
17.6
1.28

A
A
A2s

-40
-

50
50
50
10
2
5
5
0.5
150
125

A/s
A/s
A/s
A/s
A
V
W
W
C
C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/s.
April 1998

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT131 series

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-lead

Thermal resistance
junction to lead
Thermal resistance
junction to ambient

full cycle
half cycle
pcb mounted;lead length = 4mm

Rth j-a

MIN.

TYP.

MAX.

UNIT

150

60
80
-

K/W
K/W
K/W

MIN.

TYP.

MAX.

UNIT

T2+ G+
T2+ GT2- GT2- G+

0.4
1.3
1.4
3.8

3
3
3
7

mA
mA
mA
mA

T2+ G+
T2+ GT2- GT2- G+

0.2
-

1.2
4.0
1.0
2.5
1.3
1.2
0.7
0.3
0.1

5
8
5
8
5
1.5
1.5
0.5

mA
mA
mA
mA
mA
V
V
V
mA

MIN.

TYP.

MAX.

UNIT

15

V/s

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

IGT

Gate trigger current

VD = 12 V; IT = 0.1 A

IL

Latching current

IH
VT
VGT

Holding current
On-state voltage
Gate trigger voltage

ID

Off-state leakage current

VD = 12 V; IGT = 0.1 A

VD = 12 V; IGT = 0.1 A
IT = 2.0 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 C
VD = VDRM(max); Tj = 125 C

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

dVD/dt

Critical rate of rise of

off-state voltage
Gate controlled turn-on
time

VDM = 67% VDRM(max); Tj = 125 C;

exponential waveform; RGK = 1 k
ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/s

tgt

April 1998

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

1.4

BT131 series

BT132D

Ptot / W

Tmb(max) / C

=180

1.2

120

IT(RMS) / A
41
53

60

0.6

30

51 C

65
0.8

90
0.8

BT132D

1.2

77
0.6

89
0.4

0.4

101

0.2

113

00

0.2

0.4

0.6
IT(RMS) / A

0.8

0.2

125
1.2

0
-50

time

2.0

Tj initial = 25 C max
100

1.5
dI T/dt limit

T2- G+ quadrant

0.5

100us

1ms
T/s

10ms

0
0.01

100ms

Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.

ITSM / A

BT132D

IT(RMS) / A

2.5
T

20

150

ITSM

IT

10
10us

100

Fig.4. Maximum permissible rms current IT(RMS) ,

versus lead temperature Tlead.

BT132D

ITSM / A

50

Tlead / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms

on-state current, IT(RMS), where = conduction angle.

1000

1.6

I TSM
T

15

10

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead 51C.

BT136
IT

0.1
1
surge duration / s

VGT(Tj)
VGT(25 C)

BT136

1.4

time

Tj initial = 25 C max

1.2

10

1
0.8

0.6
0

10
100
Number of cycles at 50Hz

0.4
-50

1000

Fig.3. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.

April 1998

50
Tj / C

100

150

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25C), versus junction temperature Tj.

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT131 series

IGT(Tj)
IGT(25 C)

BT131

Tj = 125 C
Tj = 25 C

T2+ G+
T2+ GT2- GT2- G+

2.5

BT134W

IT / A

1.5
Vo = 1.0 V
Rs = 0.21 Ohms

typ

1.5

max

0.5

0.5
0

0
-50

50
Tj / C

100

150

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25C), versus junction temperature Tj.

IL(Tj)
IL(25 C)

0.5

1
VT / V

1.5

Fig.10. Typical and maximum on-state characteristic.

100

TRIAC

2.5

BT134W

Zth j-sp (K/W)

10
unidirectional

bidirectional

1.5

P
D

tp

0.1

0.5

0
-50

50
Tj / C

100

0.01
10us

150

IH(Tj)
IH(25C)

1ms

10ms

0.1s

1s

10s

tp / s

Fig.11. Transient thermal impedance Zth j-lead, versus

pulse width tp.

Fig.8. Normalised latching current IL(Tj)/ IL(25C),

versus junction temperature Tj.

0.1ms

1000

TRIAC

dVD/dt (V/us)

2.5
100

2
1.5

10

1
0.5
0
-50

50
Tj / C

100

150

50

100

150

Tj / C

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25C),

versus junction temperature Tj.

April 1998

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT131 series

MECHANICAL DATA
Dimensions in mm

2.54

Net Mass: 0.2 g

0.66
0.56

1.6
4.2 max

4.8 max

5.2 max

12.7 min

0.48
0.40

321

0.40
min

Fig.13. TO92 ; plastic envelope.

Notes
1. Epoxy meets UL94 V0 at 1/8".

April 1998

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT131 series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

April 1998

Rev 1.000