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Interpretation of Results
The main objective of Experiment 4 entitled JFET Fundamentals is to
demonstrate the biasing circuit for a Junction Field Effect Transistor. In the
previous experiments we have studied the characteristics of BJT, in this case we
would be studying the characteristics of Field Effect Transistor (FET). FETs are
unipolar devices unlike BJTs that both use hole and electron carriers, they
operate using only one type of charge carrier, either a hole or an electron.
There are two types of FET: JFET (Junction Field Effect Transistor) and MOSFET
VGG = 0V
4
3.5
3
2.5
ID(mA)
2
1.5
1
0.5
0
0
VGG = -0.5V
2.5
2
1.5
ID(mA)
1
0.5
0
0
VGG = -3V
1
0.9
0.8
0.7
0.6
ID(mA)
0.5
0.4
0.3
0.2
0.1
0
0
VDD = 4V
4
3.5
3
2.5
ID(mA)
2
1.5
1
0.5
0
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
VDD = 8V
4
3.5
3
2.5
ID(mA)
2
1.5
1
0.5
0
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5