[ /Title

(RFM6
N45,
RFP6N4
5,
RFP6N5
0)
/Subject
(6A,
450V
and
500V,
1.250
Ohm, NChannel
Power
MOSFETs)
/Author
()
/Keywords
(Harris
Semiconductor, NChannel
Power
MOSFETs,
TO204AA,
TO220AB)
/Creator
()
/DOCIN

RFM6N45, RFP6N45,
RFP6N50

Semiconductor

6A, 450V and 500V, 1.250 Ohm,

N-Channel Power MOSFETs

September 1998

Features

Description

6A, 450V and 500V

Linear Transfer Characteristics

These are N-Channel enhancement mode silicon gate

power field effect transistors specifically designed for applications such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate
drive power. These types can be operated directly from integrated circuits.

High Input Impedence

Formerly developmental type TA17425.

rDS(ON) = 1.250
SOA is Power Dissipation Limited
Nanosecond Switching Speeds

Majority Carrier Device

Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol
D

Ordering Information
PART NUMBER

PACKAGE

BRAND

RFM6N45

TO-204AA

RFM6N45

RFP6N45

TO-204AA

RFP6N45

RFP6N50

TO-220AB

RFP6N50

NOTE: When ordering, include the entire part number.

Packaging
JEDEC TO-204AA

JEDEC TO-220AB
SOURCE
DRAIN
GATE

DRAIN
(FLANGE)

DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

Harris Corporation 1998

5--1

File Number

1494.2

RFM6N45, RFP6N45, RFP6N50

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg

RFM6N45
450
450
6
15
20
100
0.8
-55 to 150

RFP6N45
450
450
6
15
20
75
0.6
-55 to 150

RFP6N50
500
500
6
15
20
75
0.6
-55 to 150

UNITS
V
V
A
A
V
W
W/oC
oC

300
260

300
260

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER

MIN

TYP

MAX

UNITS

RFM6N45, RFP6N45

450

RFP6N50

500

VGS = VDS, ID = 250A (Figure 8)

VDS = Rated BVDSS, VGS = 0V

VDS = 0.8 x Rated BVDSS,

VGS = 0V, TC = 125oC

25

VGS = 20V, VDS = 0V

100

nA

ID = 6A, VGS = 10V, (Figures 6, 7)

1.250

ID = 6A, VGS = 10V

7.50

ID = 3A, VDD = 250V, RG = 50,

VGS = 10V, RL = 81
(Figures 10, 11, 12)

15

45

ns

40

80

ns

td(OFF)

190

300

ns

tf

60

100

ns

1500

pF

250

pF

200

pF

1.25

oC/W

1.67

oC/W

Drain to Source Breakdown Voltage

Gate Threshold Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Drain to Source On Resistance(Note 2 )
Drain to Source On-Voltage (Note 2)
Turn-On Delay Time
Rise Time

SYMBOL
BVDSS

VGS(TH)
IDSS

IGSS
rDS(ON)
VDS(ON)
td(ON)
tr

Turn-Off Delay Time

Fall Time
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Thermal Resistance Junction to Case

RJC

TEST CONDITIONS
ID = 250A, VGS = 0V

VGS = 0V, VDS = 25V

f = 1MHz, (Figure 9)

RFM6N45

RFP6N45, RFP6N50

Source to Drain Diode Specifications

PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time

SYMBOL
VSD
trr

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ISD = 3A

1.4

ISD = 4A, dISD/dt = 100A/s

800

ns

NOTES:
2. Pulsed test: Pulse width 300s duty cycle 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.

5-2

RFM6N45, RFP6N45, RFP6N50

Typical Performance Curves
7

1.0

ID, DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

1.2

0.8
0.6
0.4

5
4
3
2
1

0.2
0

50

100

0
25

150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

100W

OPERATION IN THIS AREA

MAY BE LIMITED BY rDS(ON)

PULSE DURATION = 80s VGS = 7 V to 10V

DUTY CYCLE 2%
10
TC = 25oC

150

VGS = 6V
VGS = 5V

8
6
4
2

VDSS (Max) 450V RFM6N45, RFP6N45

VDSS (MAX) 500V RFP6N50
0.1

VGS = 4V

0
1

10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)

1000

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

6
8
10
12
4
VDS, DRAIN TO SOURCE VOLTAGE (V)

14

FIGURE 4. SATURATION CHARACTERISTICS

2.4

14
VDS = 20V
80s PULSE TEST
DUTY CYCLE 2%

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE ()

ID(ON), DRAIN TO SOURCE CURRENT (A)

125

12

DC OPERATION

100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

TC = 25oC

75W

75

TC, CASE TEMPERATURE (oC)

10

6
25oC
125oC
2

VGS = 10V
PULSE DURATION = 80s
DUTY CYCLE 2%

2.0
1.6

125oC

1.2
25oC

0.8

-40oC

0.4

-40oC

0
0

2
4
VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. TRANSFER CHARACTERISTICS

6
10
8
ID, DRAIN CURRENT (A)

12

14

FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

5-3

RFM6N45, RFP6N45, RFP6N50

Typical Performance Curves

(Continued)
1.5

NORMALIZED GATE
THRESHOLD VOLTAGE

2.5

1.5

1.0

0.5

0.5

0
50
100
TJ, JUNCTION TEMPERATURE (oC)

0
-50

150

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

500
VDS, DRAIN TO SOURCE VOLTAGE (V)

1000

CISS

600

COSS
200
CRSS
0

10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)

150

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

VGS = 0V, f = 1MHz

CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGS

1400

0
50
100
TC, JUNCTION TEMPERATURE (oC)

10

VDD = BVDSS

375

GATE
SOURCE
VOLTAGE

250

RL = 83
IG(REF) = 1.1mA
VGS = 10V

125

0.75 BVDSS
0.50 BVDSS
0.25 BVDSS

8
VDD = BVDSS
6

DRAIN SOURCE VOLTAGE

0

50

VGS, GATE TO SOURCE VOLTAGE (V)

-50

C, CAPACITANCE (pF)

VGS = VDS
ID = 250A

ID = 6A
VGS = 10V

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

3.5

I
20 G(REF)
IG(ACT)

t, TIME (s)

I
80 G(REF)
IG(ACT)

NOTE: Refer to Harris Applications Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

tON

tOFF

td(ON)

td(OFF)
tf

tr
RL

VDS

90%

90%

RG

VDD

10%

10%

DUT

90%
VGS

VGS

FIGURE 11. SWITCHING TIME TEST CIRCUIT

10%

50%

50%
PULSE WIDTH

FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

5-4