HGTG 30 N 60 A 4 D

HGTG30N60A4D
Data Sheet
September 2004
600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Features
>100kHz Operation At 390V, 30A
200kHz Operation At 390V, 18A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
Low Conduction Loss
Temperature Compensating SABER Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
Formerly Developmental Type TA49345.
Ordering Information
PART NUMBER
PACKAGE
HGTG30N60A4D
NOTE:
TO-247
BRAND
COLLECTOR
(FLANGE)
30N60A4D
When ordering, use the entire part number.
Symbol
C
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2004 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B1
HGTG30N60A4D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified

HGTG30N60A4D,
UNITS
600
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
75
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
60
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
240
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

Collector Current Continuous
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
30
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
150A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
463
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.7
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
IC = 250A, VGE = 0V
VCE = 600V
IC = 30A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
IC = 250A, VCE = VGE

VGE = 20V
SSOA
TJ = 150oC, RG = 3, VGE = 15V,

L = 100H, VCE = 600V
VGEP
MIN
TYP
MAX
UNITS
600
250
2.8
mA
1.8
2.6
1.6
2.0
4.5
5.2
7.0
250
nA
150
IC = 30A, VCE = 300V
8.5
On-State Gate Charge
Qg(ON)
IC = 30A,
VCE = 300V
VGE = 15V
225
270
nC
VGE = 20V
300
360
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25oC,

ICE = 30A,
VCE = 390V,
VGE = 15V,
RG = 3,
L = 200H,
Test Circuit (Figure 24)
25
ns
Current Rise Time

Current Turn-Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
ns
EON2
600
EOFF
240
350
24
ns
11
ns
180
200
ns
58
70
ns
td(ON)I
trI
td(OFF)I
tfI
Turn-On Energy (Note 2)
EON1
EON2
Turn-Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
ns
38
Turn-Off Energy (Note 3)
Current Fall Time
ns
280
Current Turn-Off Delay Time
150
EON1
Current Turn-On Delay Time
12
Current Rise Time
trr
IGBT and Diode at TJ = 125oC,

ICE = 30A,
VCE = 390V, VGE = 15V,
RG = 3,
L = 200H,
Test Circuit (Figure 24)
IEC = 30A
280
1000
1200
450
750
2.2
2.5
IEC = 30A, dIEC/dt = 200A/s
40
55
ns
IEC = 1A, dIEC/dt = 200A/s
30
42
ns
HGTG30N60A4D
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Thermal Resistance Junction To Case
RJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGBT
0.27
oC/W
Diode
0.65
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
VGE = 15V
70
60
50
40
30
20
10
0
25
50
75
100
125
150
200
TJ = 150oC, RG = 3, VGE = 15V, L = 500H
150
100
50
TC , CASE TEMPERATURE (oC)
TC
VGE
75oC
15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RJC = 0.27oC/W, SEE NOTES
TJ = 125oC, RG = 3, L = 200H, V CE = 390V
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT
60
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
fMAX, OPERATING FREQUENCY (kHz)
300
10
300
400
500
600
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE
30
100
18
900
VCE = 390V, RG = 3, TJ = 125oC
800
16
14
700
ISC
12
600
10
500
400
tSC
6
4
10
300
11
12
13
14
15
200
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
60
Typical Performance Curves
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG30N60A4D
50
Unless Otherwise Specified (Continued)


DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250s
40
30
20
TJ = 125oC
10
TJ = 25oC
TJ = 150oC
0
0
1.0
0.5
1.5
2.0
TJ = 125oC, VGE = 12V, VGE = 15V
2000
1500
1000
TJ = 25oC, VGE = 12V, VGE = 15V

10
20
30
40
50
ICE , COLLECTOR TO EMITTER CURRENT (A)
TJ = 125oC
10
TJ = 150oC
0.5
1.0
1.5
2.0
2.5
RG = 3, L = 200H, VCE = 390V

1200
1000
800
TJ = 125oC, VGE = 12V OR 15V
600
400
200
TJ = 25oC, VGE = 12V OR 15V

0
10
20
30
40
50
60
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT
100
RG = 3, L = 200H, VCE = 390V
RG = 3, L = 200H, VCE = 390V
TJ = 25oC, TJ = 125oC, VGE = 12V
32
80
30
28
26
24
TJ = 125oC, VGE = 15V, VGE = 12V
60
TJ = 25oC, VGE = 12V
40
20
TJ = 25oC, TJ = 125oC, VGE = 15V
22
20
TJ = 25oC
60
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
20
0
0
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT
34
30
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (J)
EON2 , TURN-ON ENERGY LOSS (J)
3000
500
40
1400
RG = 3, L = 200H, VCE = 390V
2500

2.5
3500
50
TJ = 25oC, VGE = 15V

0
10
20
30
40
50
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT
60
10
20
30
40
50
60
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT
HGTG30N60A4D
220
70
RG = 3, L = 200H, VCE = 390V
200
RG = 3, L = 200H, VCE = 390V

60
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
180
160
140
TJ = 125oC, VGE = 12V OR 15V

50
40
TJ = 25oC, VGE = 12V OR 15V
30
VGE = 12V, VGE = 15V, TJ = 25oC

120
0
10
20
30
40
50
20
60
15.0
350
DUTY CYCLE < 0.5%, VCE = 10V
300 PULSE DURATION = 250s
TJ = 25oC
250
200
TJ = 125oC
TJ = -55oC
100
50
0
6
10
11
VGE, GATE TO EMITTER VOLTAGE (V)
2
ICE = 30A
ICE = 15A
0
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE

TEMPERATURE
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ICE = 60A
50
60
VCE = 600V
VCE = 400V
10.0
7.5
VCE = 200V
5.0
2.5
50
100
150
200
250
FIGURE 14. GATE CHARGE WAVEFORMS
25
50
QG , GATE CHARGE (nC)
ETOTAL = EON2 + EOFF
40
12.5
12
RG = 3, L = 200H, VCE = 390V, VGE = 15V
30
IG(REF) = 1mA, RL = 15, TJ = 25oC
FIGURE 13. TRANSFER CHARACTERISTIC
20
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT
150
10
20
TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V

ETOTAL = EON2 + EOFF
16
12
8
ICE = 60A
4
ICE = 30A
ICE = 15A
0
10
100
300
RG, GATE RESISTANCE ()
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG30N60A4D
C, CAPACITANCE (nF)
10
FREQUENCY = 1MHz
6
CIES
4
COES
CRES
0
0
10
15
20
25
2.3
PULSE DURATION = 250s, TJ = 25oC
2.2
2.1
2.0
ICE = 60A
1.9
ICE = 30A
1.8
ICE = 15A
1.7
10
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE
30
dIEC/dt = 200A/s
90
trr , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
14
15
16
100
DUTY CYCLE < 0.5%,
25
25oC
125oC
20
15
10
5
125oC trr
80
70
60
125oC ta
50
25oC trr
40
125oC tb
30
20
25oC ta
10
25oC tb
0
0.5
1.0
1.5
2.5
2.0
10
VEC , FORWARD VOLTAGE (V)
IEC = 30A, VCE = 390V
40
125oC tb
30
25oC ta
20
25oC tb
10
0
200
300
400
500
600
700
800
900
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF

CURRENT
1000
Qrr , REVERSE RECOVERY CHARGE (nC)
50
25
20
30
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
60
125oC ta
15
IEC , FORWARD CURRENT (A)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP
trr , RECOVERY TIMES (ns)
13

vs GATE TO EMITTER VOLTAGE
35
12
11
1400
VCE = 390V
125oC, IEC = 30A
1200
1000
125oC, IEC = 15A
800
600
25oC, IEC = 30A
400
25oC, IEC = 15A
200
0
200
300
400
500
600
700
800
900
1000
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF

CURRENT
HGTG30N60A4D
ZJC , NORMALIZED THERMAL RESPONSE
100
0.50
0.20
t1
0.10
10-1
PD
0.05
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms

HGTP30N60A4D
DIODE TA49373
90%
10%
VGE
EON2
EOFF
L = 200H
VCE
RG = 3
90%
DUT
+
ICE
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
HGTG30N60A4D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handlers body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD LD26 or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DOME
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I2C
EnSigna
i-Lo
FACT
ImpliedDisconnect
FACT Quiet Series
ISOPLANAR
LittleFET
MICROCOUPLER
MicroFET
MicroPak
MICROWIRE
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MSXPro
OCX
OCXPro
OPTOLOGIC
Across the board. Around the world. OPTOPLANAR
PACMAN
The Power Franchise
POP
Programmable Active Droop
Power247
PowerSaver
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SerDes
SILENT SWITCHER
SMART START
SPM
Stealth
SuperFET
SuperSOT-3
SuperSOT-6
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11

HGTG 30 N 60 A 4 D

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HGTG30N60A4D

600V, SMPS Series N-Channel IGBT with

Formerly Developmental Type TA49345.

When ordering, use the entire part number.

2004 Fairchild Semiconductor Corporation

TC = 25oC, Unless Otherwise Specified

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

TJ = 25oC, Unless Otherwise Specified

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage

IC = 250A, VCE = VGE

TJ = 150oC, RG = 3, VGE = 15V,

IC = 30A, VCE = 300V

On-State Gate Charge

Current Turn-On Delay Time

IGBT and Diode at TJ = 25oC,

Current Rise Time

Turn-On Energy (Note 2)

Turn-On Energy (Note 2)

Turn-Off Energy (Note 3)

Diode Forward Voltage

Diode Reverse Recovery Time

2004 Fairchild Semiconductor Corporation

Turn-Off Energy (Note 3)

Current Fall Time

Turn-On Energy (Note 2)

Current Turn-Off Delay Time

Current Turn-On Delay Time

Turn-On Energy (Note 2)

Current Rise Time

IGBT and Diode at TJ = 125oC,

IEC = 30A, dIEC/dt = 200A/s

IEC = 1A, dIEC/dt = 200A/s

TJ = 25oC, Unless Otherwise Specified (Continued)

Thermal Resistance Junction To Case

TJ = 150oC, RG = 3, VGE = 15V, L = 500H

TC , CASE TEMPERATURE (oC)

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

2004 Fairchild Semiconductor Corporation

tSC , SHORT CIRCUIT WITHSTAND TIME (s)

fMAX, OPERATING FREQUENCY (kHz)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

ISC, PEAK SHORT CIRCUIT CURRENT (A)

ICE , DC COLLECTOR CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

Typical Performance Curves

VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

Typical Performance Curves