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HGTG30N60A4D

Data Sheet

September 2004

600V, SMPS Series N-Channel IGBT with


Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Features
>100kHz Operation At 390V, 30A
200kHz Operation At 390V, 18A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
Low Conduction Loss
Temperature Compensating SABER Model
www.fairchildsemi.com

Packaging
JEDEC STYLE TO-247
E
C

Formerly Developmental Type TA49345.

Ordering Information
PART NUMBER

PACKAGE

HGTG30N60A4D
NOTE:

TO-247

BRAND
COLLECTOR
(FLANGE)

30N60A4D

When ordering, use the entire part number.

Symbol
C

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,587,713

4,598,461

4,605,948

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

2004 Fairchild Semiconductor Corporation

HGTG30N60A4D Rev. B1

HGTG30N60A4D
Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified


HGTG30N60A4D,

UNITS

600

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25

75

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110

60

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

240

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES


Collector Current Continuous

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

20

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM

30

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

150A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

463

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.7

W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

260

oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. Pulse width limited by maximum junction temperature.

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified

PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage


Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage

SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES

TEST CONDITIONS
IC = 250A, VGE = 0V
VCE = 600V
IC = 30A,
VGE = 15V

TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC

IC = 250A, VCE = VGE


VGE = 20V

SSOA

TJ = 150oC, RG = 3, VGE = 15V,


L = 100H, VCE = 600V

VGEP

MIN

TYP

MAX

UNITS

600

250

2.8

mA

1.8

2.6

1.6

2.0

4.5

5.2

7.0

250

nA

150

IC = 30A, VCE = 300V

8.5

On-State Gate Charge

Qg(ON)

IC = 30A,
VCE = 300V

VGE = 15V

225

270

nC

VGE = 20V

300

360

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25oC,


ICE = 30A,
VCE = 390V,
VGE = 15V,
RG = 3,
L = 200H,
Test Circuit (Figure 24)

25

ns

Current Rise Time


Current Turn-Off Delay Time
Current Fall Time

trI
td(OFF)I
tfI

ns

EON2

600

EOFF

240

350

24

ns

11

ns

180

200

ns

58

70

ns

td(ON)I
trI
td(OFF)I
tfI

Turn-On Energy (Note 2)

EON1

Turn-On Energy (Note 2)

EON2

Turn-Off Energy (Note 3)

EOFF

Diode Forward Voltage

VEC

Diode Reverse Recovery Time

2004 Fairchild Semiconductor Corporation

ns

38

Turn-Off Energy (Note 3)

Current Fall Time

ns

280

Turn-On Energy (Note 2)

Current Turn-Off Delay Time

150

EON1

Current Turn-On Delay Time

12

Turn-On Energy (Note 2)

Current Rise Time

trr

IGBT and Diode at TJ = 125oC,


ICE = 30A,
VCE = 390V, VGE = 15V,
RG = 3,
L = 200H,
Test Circuit (Figure 24)

IEC = 30A

280

1000

1200

450

750

2.2

2.5

IEC = 30A, dIEC/dt = 200A/s

40

55

ns

IEC = 1A, dIEC/dt = 200A/s

30

42

ns

HGTG30N60A4D Rev. B1

HGTG30N60A4D
Electrical Specifications

TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

Thermal Resistance Junction To Case

RJC

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGBT

0.27

oC/W

Diode

0.65

oC/W

NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified

VGE = 15V
70
60
50
40
30
20
10
0
25

50

75

100

125

150

200

TJ = 150oC, RG = 3, VGE = 15V, L = 500H

150

100

50

TC , CASE TEMPERATURE (oC)

TC

VGE

75oC

15V

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)


100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RJC = 0.27oC/W, SEE NOTES
TJ = 125oC, RG = 3, L = 200H, V CE = 390V
30

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO


EMITTER CURRENT

2004 Fairchild Semiconductor Corporation

60

tSC , SHORT CIRCUIT WITHSTAND TIME (s)

fMAX, OPERATING FREQUENCY (kHz)

300

10

300

400

500

600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

500

200

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE


TEMPERATURE

30

100

18

900
VCE = 390V, RG = 3, TJ = 125oC
800

16
14

700
ISC

12

600

10

500

400
tSC

6
4
10

300

11

12

13

14

15

200

ISC, PEAK SHORT CIRCUIT CURRENT (A)

ICE , DC COLLECTOR CURRENT (A)

60

ICE, COLLECTOR TO EMITTER CURRENT (A)

Typical Performance Curves

VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

HGTG30N60A4D Rev. B1

HGTG30N60A4D

50

Unless Otherwise Specified (Continued)


ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

Typical Performance Curves


DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250s

40

30

20

TJ = 125oC

10

TJ = 25oC

TJ = 150oC

0
0

1.0
0.5
1.5
2.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 125oC, VGE = 12V, VGE = 15V

2000
1500
1000

TJ = 25oC, VGE = 12V, VGE = 15V


10
20
30
40
50
ICE , COLLECTOR TO EMITTER CURRENT (A)

TJ = 125oC
10

TJ = 150oC

0.5
1.0
1.5
2.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

2.5

RG = 3, L = 200H, VCE = 390V


1200
1000
800
TJ = 125oC, VGE = 12V OR 15V
600
400
200

TJ = 25oC, VGE = 12V OR 15V


0

10

20

30

40

50

60

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO


EMITTER CURRENT

100

RG = 3, L = 200H, VCE = 390V

RG = 3, L = 200H, VCE = 390V

TJ = 25oC, TJ = 125oC, VGE = 12V

32

80
30
28
26
24

TJ = 125oC, VGE = 15V, VGE = 12V

60
TJ = 25oC, VGE = 12V
40

20

TJ = 25oC, TJ = 125oC, VGE = 15V

22
20

TJ = 25oC

60

trI , RISE TIME (ns)

td(ON)I, TURN-ON DELAY TIME (ns)

20

0
0

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO


EMITTER CURRENT

34

30

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

EOFF, TURN-OFF ENERGY LOSS (J)

EON2 , TURN-ON ENERGY LOSS (J)

3000

500

40

1400

RG = 3, L = 200H, VCE = 390V

2500

DUTY CYCLE < 0.5%, VGE = 15V


PULSE DURATION = 250s

2.5

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE

3500

50

TJ = 25oC, VGE = 15V


0

10

20

30

40

50

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO


EMITTER CURRENT

2004 Fairchild Semiconductor Corporation

60

10

20

30

40

50

60

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO


EMITTER CURRENT

HGTG30N60A4D Rev. B1

HGTG30N60A4D
Unless Otherwise Specified (Continued)

220

70
RG = 3, L = 200H, VCE = 390V

200

RG = 3, L = 200H, VCE = 390V


60

VGE = 12V, VGE = 15V, TJ = 125oC

tfI , FALL TIME (ns)

td(OFF)I , TURN-OFF DELAY TIME (ns)

Typical Performance Curves

180

160

140

TJ = 125oC, VGE = 12V OR 15V


50

40
TJ = 25oC, VGE = 12V OR 15V
30

VGE = 12V, VGE = 15V, TJ = 25oC


120
0

10

20

30

40

50

20

60

ICE , COLLECTOR TO EMITTER CURRENT (A)

15.0

350
DUTY CYCLE < 0.5%, VCE = 10V
300 PULSE DURATION = 250s
TJ = 25oC
250
200
TJ = 125oC
TJ = -55oC

100
50
0
6

10

11
VGE, GATE TO EMITTER VOLTAGE (V)

2
ICE = 30A
ICE = 15A

0
75

100

125

TC , CASE TEMPERATURE (oC)

FIGURE 15. TOTAL SWITCHING LOSS vs CASE


TEMPERATURE

2004 Fairchild Semiconductor Corporation

150

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

ICE = 60A

50

60

VCE = 600V

VCE = 400V

10.0
7.5

VCE = 200V
5.0
2.5

50

100

150

200

250

FIGURE 14. GATE CHARGE WAVEFORMS

25

50

QG , GATE CHARGE (nC)

ETOTAL = EON2 + EOFF

40

12.5

12

RG = 3, L = 200H, VCE = 390V, VGE = 15V

30

IG(REF) = 1mA, RL = 15, TJ = 25oC

FIGURE 13. TRANSFER CHARACTERISTIC

20

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER


CURRENT

VGE, GATE TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO


EMITTER CURRENT

150

10

ICE , COLLECTOR TO EMITTER CURRENT (A)

20

TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V


ETOTAL = EON2 + EOFF

16

12

8
ICE = 60A
4
ICE = 30A
ICE = 15A
0

10

100

300

RG, GATE RESISTANCE ()

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

HGTG30N60A4D Rev. B1

HGTG30N60A4D

C, CAPACITANCE (nF)

10

Unless Otherwise Specified (Continued)

FREQUENCY = 1MHz

6
CIES
4

COES
CRES

0
0

10

15

20

25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Typical Performance Curves

2.3
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250s, TJ = 25oC

2.2
2.1
2.0

ICE = 60A

1.9

ICE = 30A

1.8

ICE = 15A

1.7
10

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER


VOLTAGE

30

dIEC/dt = 200A/s

90
trr , RECOVERY TIMES (ns)

IEC , FORWARD CURRENT (A)

14

15

16

100
DUTY CYCLE < 0.5%,
PULSE DURATION = 250s

25
25oC

125oC
20
15
10
5

125oC trr

80
70
60

125oC ta

50

25oC trr

40

125oC tb

30
20

25oC ta

10

25oC tb

0
0.5

1.0

1.5

2.5

2.0

10

VEC , FORWARD VOLTAGE (V)

IEC = 30A, VCE = 390V

40
125oC tb

30

25oC ta

20
25oC tb
10
0
200

300

400

500

600

700

800

900

dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)

FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF


CURRENT

2004 Fairchild Semiconductor Corporation

1000

Qrr , REVERSE RECOVERY CHARGE (nC)

50

25

20

30

FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT

60
125oC ta

15

IEC , FORWARD CURRENT (A)

FIGURE 19. DIODE FORWARD CURRENT vs FORWARD


VOLTAGE DROP

trr , RECOVERY TIMES (ns)

13

FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE


vs GATE TO EMITTER VOLTAGE

35

12

11

VGE, GATE TO EMITTER VOLTAGE (V)

1400

VCE = 390V

125oC, IEC = 30A

1200
1000

125oC, IEC = 15A

800
600
25oC, IEC = 30A

400

25oC, IEC = 15A

200
0
200

300

400

500

600

700

800

900

1000

dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)

FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF


CURRENT

HGTG30N60A4D Rev. B1

HGTG30N60A4D

ZJC , NORMALIZED THERMAL RESPONSE

Typical Performance Curves

Unless Otherwise Specified (Continued)

100
0.50
0.20

t1

0.10
10-1

PD

0.05

t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC

0.02
0.01
SINGLE PULSE
10-2 -5
10

10-4

10-3

10-2

10-1

100

101

t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms


HGTP30N60A4D
DIODE TA49373
90%
10%

VGE

EON2
EOFF

L = 200H
VCE
RG = 3

90%

DUT
+

ICE
VDD = 390V

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT

2004 Fairchild Semiconductor Corporation

10%
td(OFF)I

tfI

trI
td(ON)I

FIGURE 25. SWITCHING TEST WAVEFORMS

HGTG30N60A4D Rev. B1

HGTG30N60A4D
Handling Precautions for IGBTs

Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handlers body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

Operating frequency information for a typical device


(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

1. Prior to assembly into a circuit, all leads should be kept


shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD LD26 or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.

2004 Fairchild Semiconductor Corporation

fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).


Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).

HGTG30N60A4D Rev. B1

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11