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20 Revolutionary Road, Ossining, NY 10562

914-924-7568 • lrivaud@optonline.net • www.linkedin.com/in/lrivaud


SCIENTIFIC ANALYTICAL RESEARCHER with extensive experience in electron microscopy within

nanotechnology of metal, semiconductor, and powder effect pigment fields. In-depth knowledge of scanning
electron microscopy (SEM), scanning transmission electron microscopy (STEM), and energy dispersive x-
ray spectroscopy microanalysis (EDS). Skilled in advising non-scientific personnel on laboratory
instrumentation requirements and specifications to facilitate research, product development, and
manufacturing yield enhancement. Expert in operating state-of-the-art digital instrumentation and supporting
product development. Bilingual in English and Spanish


ENGELHARD CORPORATION, (acquired by BASF CORPORATION 2006), Ossining, NY 1990-2009

Senior Physicist, Analytical Group, Effect Pigments (1996-2009)
Operated highly sophisticated instrument manual controls and software. Created SEM facility from the
ground-up, including materials sourcing and layout. Used state-of-the-art SEM instrument capable of
imaging in the nanometer range. Established SEM analysis techniques for diverse materials, mainly pigment
powders and iridescent film. Facilitated product development by troubleshooting failures and resolving
manufacturing issues.
• Performed root cause analysis of failing glass-based effect pigment product; provided solutions for
manufacturing processes that prevented problem mechanisms and resulted in multimillion-dollar
revenue product.
• Tasked to procure new highly sophisticated SEM instrument to advance research and product
development; networked with vendors, acquiring $600,000 digital imaging analytical equipment.
• Invented sample preparation techniques for SEM and ultramicrotomy that allowed data extraction
and enabled a project to proceed more quickly with faster, enhanced information feedback.
• Analyzed competitor’s product samples and determined violation of a company patent, resulting in
thousands of dollars saved on legal expenses.
• Research Strengths: Physics of Inorganic Materials, Troubleshooting Microstructures, Scientific
Problem-Solving, Scientific Report Writing into Electronic Databases, Scanning Electron
Microscopy, Imaging Material Surfaces, SEM and EDS Instrumentation, Data Interpretation,
Ultramicrotomy sample preparation

MEARL CORPORATION, Research Physicist, Analytical Department (1990-1996)

Developed SEM laboratory; introduced SEM and STEM techniques into research laboratories. Executed
ultramicrotomy process for cross-sectional polymer film analysis.


Research Scientist, Microelectronics Technology Division
Utilized TEM for planar and cross-sectional views of microelectronic silicon devices


Ph.D. in Materials Science and Engineering, University of Illinois at Urbana-Champaign

M.S. in Solid State Physics, Imperial College of Science and Technology [London, England]
B.S. in Physics, National Autonomous University of Mexico [Mexico City]

L. Rivaud, D. Fuller, and M. Giammatteo, Provisional Patent Application BASF 5457, “Photonic Coloration
by Selective Light Scattering Using a Diffraction Grating”, filed October 15, 2008.
L. Rivaud and G.A. Hawkins, “An Etch Resistant Oxide Mask Formed by Low Temperature and Low Energy
Oxygen Implantation”, U.S. Patent #4948624, August 14, 1990.
L. Rivaud, P.L. Roselle, and D.L. Losee, “A Process to Eliminate the Re-entrant Profile in a Double
Polysilicon Gate Structure”, U.S. Patent #4,888,298, December 19, 1989.
L. Rivaud, “Enhanced Chroma Interference Pigments Using Exfoliated Graphite Nanoparticles”, filed for
BASF June 1, 2009.
Rivaud, L. and Tagueña, J. “Nature Dressed in Blue”, Como ves?, #82, pp. 16-17, September 2005.
Rivaud, L. “Lightning and the Electron Microscope”, Microscopy Today issue #97-7, September 1997, p.8
Rivaud, L. et al. “Structural and Physical Properties of Polycrystalline Hexagonal Ta2N Films Deposited by
Reactive Sputtering”, J. Vac. Sci. Technology A (1991) pp.2180-2182.
Rivaud et al. “A Transmission Electron Microscopy (TEM) Study of Oxygen Precipitation induced by
internal gettering in Low and High Oxygen Wafers”, J. Electrochem. Soc. 135, (1988), pp. 437-442.
Rivaud, L. and Lavine, J.P, “The Dynamics of Octohedral Precipitate Formation in Czochralski Silicon: a
Transmission Electron Microscopy Study”, Microscopy of Semiconducting Materials (1987), pp. 469-
Rivaud, L. “A Sample Preparation Technique for XTEM of Evaporated Films with Poor Adhesion”, J.
Electron Micros. Technique 5 (1987), pp. 113-114.
Lavine, J.P., Hawkins, G.A, Anagnostopoulos, C.N., and L. Rivaud, “Oxygen Precipitation in Silicon:
Numerical Models”, Mat. Res. Soc. Symp. Proc., Vol. 59 (1986), pp. 301-307.
Rhodes, H.E., Apai, G., and Rivaud, L., “UHV interface studies of palladium silicide formation on
hydrogenated amorphous silicon films”, Mat. Res. Soc. Proc., Vol. 70 (1986), pp. 387-392.
Rivaud, L., “A procedure to prepare cross-sectional samples for TEM”, J. Electron Micros. Technique 2
(1985), pp. 577-580.
Rivaud, L. and Hawkins, G., “Pulsed jet etch chamber for preparing silicon samples for transmission
electron microscopy”, Rev. Sci. Instrum. 56 (1985), pp. 563-566.
Uppal, P.N., Burton, L.C., Rivaud, L., and Greene, J.E., “Compositional depth profiles of chemiplated Cu2S/
(Zn,Cd)S heterojuncion solar cells”, J. Appl. Phys. 54 (1983), pp. 83-92.
Rivaud, L. et al., “Low energy ion bombardment enhanced diffusion, segregation, and phase transformation
in Cu-In alloys”, Rad. Effects 61 (1982), pp. 83-92.
Rivaud, L. et al., “Enhanced diffusion and precipitation in Cu:In alloys due to low energy ion
bombardment”, Surf. Sci. 102 (1982), pp. 610-617

Dr. Kar P. Lok

(845) 440-6908

Charles Willard
(914) 737-2554

Razvan Valter
(914) 737-2554