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ON Semiconductor

Darlington Transistors

BC517

NPN Silicon

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

VCES

30

Vdc

CollectorBase Voltage

VCB

40

Vdc

EmitterBase Voltage

VEB

10

Vdc

Collector Current Continuous

IC

1.0

Adc

Total Power Dissipation @ TA = 25C


Derate above 25C

PD

625
12

mW
mW/C

Total Power Dissipation @ TC = 25C


Derate above 25C

PD

1.5
12

Watts
mW/C

TJ, Tstg

55 to +150

Symbol

Max

Unit

CollectorEmitter Voltage

Operating and Storage Junction


Temperature Range

1
2

CASE 2911, STYLE 17


TO92 (TO226AA)

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient

RJA

200

C/W

Thermal Resistance, Junction to Case

RJC

83.3

C/W

COLLECTOR 1
BASE
2

EMITTER 3

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)


Characteristic

Symbol

Min

Typ

Max

Unit

CollectorEmitter Breakdown Voltage


(IC = 2.0 mAdc, VBE = 0)

V(BR)CES

30

Vdc

CollectorBase Breakdown Voltage


(IC = 10 Adc, IE = 0)

V(BR)CBO

40

Vdc

EmitterBase Breakdown Voltage


(IE = 100 nAdc, IC = 0)

V(BR)EBO

10

Vdc

Collector Cutoff Current


(VCE = 30 Vdc)

ICES

500

nAdc

Collector Cutoff Current


(VCB = 30 Vdc, IE = 0)

ICBO

100

nAdc

Emitter Cutoff Current


(VEB = 10 Vdc, IC = 0)

IEBO

100

nAdc

OFF CHARACTERISTICS

Semiconductor Components Industries, LLC, 2001

May, 2001 Rev. 2

Publication Order Number:


BC517/D

This datasheet has been downloaded from http://www.digchip.com at this page

BC517
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Symbol

Min

Typ

Max

Unit

hFE

30,000

CollectorEmitter Saturation Voltage


(IC = 100 mAdc, IB = 0.1 mAdc)

VCE(sat)

1.0

Vdc

BaseEmitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)

VBE(on)

1.4

Vdc

fT

200

MHz

Characteristic

ON CHARACTERISTICS(1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width  2.0%.
2. fT = |hfe| ftest

RS

in
en

IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

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BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
2.0

BANDWIDTH = 1.0 Hz
RS 0

200

i n, NOISE CURRENT (pA)

en, NOISE VOLTAGE (nV)

500

100
10 A
50
100 A
20
IC = 1.0 mA

10
5.0

BANDWIDTH = 1.0 Hz

1.0
0.7
0.5

IC = 1.0 mA

0.3
0.2

100 A

0.1
0.07
0.05

10 A

0.03
10 20

50 100 200

500 1k 2k 5k 10k 20k


f, FREQUENCY (Hz)

50k 100k

0.02
10 20

50 100 200

14

200

IC = 10 A

70
50

100 A

30
20

10

1.0 mA

1.0

2.0

BANDWIDTH = 10 Hz TO 15.7 kHz

12

BANDWIDTH = 10 Hz TO 15.7 kHz

100

50k 100k

Figure 3. Noise Current

NF, NOISE FIGURE (dB)

VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

Figure 2. Noise Voltage

500 1k 2k 5k 10k 20k


f, FREQUENCY (Hz)

10

10 A

8.0
100 A

6.0
4.0

IC = 1.0 mA

2.0
5.0

10
20
50 100 200
RS, SOURCE RESISTANCE (k)

500

0
1.0

1000

Figure 4. Total Wideband Noise Voltage

2.0

5.0

10
20
50 100 200
RS, SOURCE RESISTANCE (k)

Figure 5. Wideband Noise Figure

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500 1000

BC517
SMALLSIGNAL CHARACTERISTICS
4.0
|h fe |, SMALL-SIGNAL CURRENT GAIN

C, CAPACITANCE (pF)

20
TJ = 25C

10
7.0

Cibo
Cobo

5.0

3.0

2.0
0.04

0.1

0.2
0.4
1.0 2.0 4.0
10
VR, REVERSE VOLTAGE (VOLTS)

20

2.0

1.0
0.8
0.6
0.4

0.2
0.5

40

hFE, DC CURRENT GAIN

TJ = 125C

100k
70k
50k

25C

30k
20k
10k
7.0k
5.0k

-55C

3.0k
2.0k
5.0 7.0

10

VCE = 5.0 V

20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)

500

RV, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C
V, VOLTAGE (VOLTS)

1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0

VCE(sat) @ IC/IB = 1000


5.0 7.0

10

0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)

500

TJ = 25C
2.5

IC = 10 mA

50 mA

250 mA

500 mA

2.0
1.5
1.0
0.5
0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200


IB, BASE CURRENT (A)

500 1000

Figure 9. Collector Saturation Region

1.6

0.6

2.0

3.0

Figure 8. DC Current Gain

0.8

1.0

Figure 7. High Frequency Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Capacitance

200k

VCE = 5.0 V
f = 100 MHz
TJ = 25C

20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)

500

-1.0
-2.0

*APPLIES FOR IC/IB hFE/3.0

25C TO 125C

*RVC FOR VCE(sat)


-55C TO 25C

-3.0
25C TO 125C
-4.0
VB FOR VBE
-5.0

-55C TO 25C

-6.0
5.0 7.0 10

Figure 10. On Voltages

20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

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500

1.0
0.7
0.5

D = 0.5
0.2

0.3
0.2

0.1

SINGLE PULSE

0.05

0.1
0.07
0.05

SINGLE PULSE

0.03

ZJC(t) = r(t) RJCTJ(pk) - TC = P(pk) ZJC(t)


ZJA(t) = r(t) RJATJ(pk) - TA = P(pk) ZJA(t)

0.02
0.01
0.1

0.2

0.5

1.0

2.0

5.0

10

20
50
t, TIME (ms)

100

200

500

1.0k

2.0k

5.0k

10k

Figure 12. Thermal Response


1.0k
700
500

IC, COLLECTOR CURRENT (mA)

()
RESISTANCE (NORMALIZED)

BC517

300
200

FIGURE A

1.0 ms

TA = 25C

TC = 25C

tP

100 s

PP

1.0 s

100
70
50

PP

t1

30
20
10
0.4 0.6

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

1/f

1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

t
DUTYCYCLE  t1f  1
tP
PEAK PULSE POWER = PP

40

Figure 13. Active Region Safe Operating Area

Design Note: Use of Transient Thermal Resistance Data

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BC517
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AL
A

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N

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INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---

BC517

Notes

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BC517

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BC517/D