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Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PHP98N03LT in SOT78 (TO-220AB)
PHB98N03LT in SOT404 (D2-PAK)
PHD98N03LT in SOT428 (D-PAK).
2. Features
Low on-state resistance
Fast switching.
3. Applications
Computer motherboard high frequency DC to DC converters.
4. Pinning information
Table 1:
Pin Description
1
gate (g)
drain (d)
source (s)
mb
mounting base,
connected to drain (d)
Simplified outline
Symbol
mb
mb
mb
[1]
MBB076
2
2
1
1
3
MBK116
Top view
3
MBK091
MBK106
1 2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1.
SOT428 (D-PAK)
PHP/PHB/PHD98N03LT
Philips Semiconductors
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
Tj = 25 to 175 C
25
ID
Tmb = 25 C; VGS = 5 V
75
Ptot
Tmb = 25 C
111
Tj
junction temperature
175
RDSon
Tj = 25 C; VGS = 10 V; ID = 25 A
5.2
5.9
Tj = 25 C; VGS = 5 V; ID = 25 A
6.2
7.3
Min
Max
Unit
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
Tj = 25 to 175 C
25
VDGR
Tj = 25 to 175 C; RGS = 20 k
25
VGS
15
VGSM
gate-source voltage
tp 50 s; pulsed;
duty cycle 25%; Tj 150 C
20
ID
75
66
IDM
240
Tmb = 25 C; Figure 1
Ptot
111
Tstg
storage temperature
55
+175
Tj
55
+175
Source-drain diode
IS
75
ISM
240
Product data
2 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
03aa16
120
03af00
120
Pder
Ider
(%)
(%)
80
80
40
40
0
0
50
100
150
200
o
Tmb ( C)
P tot
P der = ---------------------- 100%
P
50
100
150
200
Tmb (C)
ID
I der = ------------------- 100%
I
tot ( 25 C )
D ( 25 C )
03af02
103
ID
(A)
RDSon = VDS / ID
tp = 10 s
102
100 s
1 ms
DC
10
10 ms
100 ms
1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Product data
3 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-mb)
Figure 4
1.35
K/W
Rth(j-a)
60
K/W
50
K/W
03af01
10
Zth(j-mb)
(K/W)
1
= 0.5
0.2
10-1
0.1
0.05
0.02
tp
T
10-2
single pulse
tp
T
10-3
10-5
10-4
10-3
10-2
10-1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
Product data
4 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 C
25
Tj = 55 C
22
Tj = 25 C
1.5
Tj = 175 C
0.5
Tj = 55 C
2.3
0.05
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
VDS = 25 V; VGS = 0 V
Tj = 25 C
Tj = 175 C
500
10
100
nA
Tj = 25 C
6.2
7.3
Tj = 175 C
10.5
12.4
5.2
5.9
IGSS
VGS = 15 V; VDS = 0 V
RDSon
40
nC
Qgs
gate-source charge
16
nC
Qgd
15
nC
Ciss
input capacitance
3000 -
pF
Coss
output capacitance
710
pF
Crss
510
pF
td(on)
18
ns
tr
80
ns
td(off)
104
ns
tf
104
ns
0.9
1.2
37
ns
20
nC
Source-drain diode
VSD
trr
Qr
recovered charge
Product data
5 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
03af03
03af05
80
80
ID
(A)
Tj = 25 C
10 V 5 V 3.5 V
3V
ID
(A)
60
60
40
40
2.5 V
20
20
175 C
VGS = 2 V
0
0
0.2
0.4
0.6
0.8
1
VDS (V)
4
VGS (V)
Tj = 25 C
03af04
03af18
0.02
RDSon
Tj = 25 C
Tj = 25 C
()
1.6
0.015
VGS = 3 V
1.2
0.01
0.8
3.5 V
5V
10 V
0.005
0.4
0
0
20
40
60
80
ID (A)
-60
60
120
180
Tj (C)
Tj = 25 C
R DSon
a = --------------------------R DSon ( 25 C )
Product data
6 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
03aa33
2.5
(V)
03aa36
10-1
ID
(A)
10-2
VGS(th)
max
2
typ
10-3
1.5
min
min
typ
max
10-4
10-5
0.5
10-6
0
-60
60
120
180
0.5
Tj ( C)
1.5
2.5
3
VGS (V)
Tj = 25 C; VDS = 5 V
03af07
104
C
(pF)
Ciss
103
Coss
Crss
102
10-1
102
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
Product data
7 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
03af06
03af08
80
10
VGS
(V)
8
VGS = 0 V
IS
(A)
60
ID = 50 A
Tj = 25 C
VDD = 15 V
40
4
20
175 C
Tj = 25 C
0.4
0.8
VSD (V)
1.2
80
QG (nC)
120
ID = 50 A; VDD = 15 V
Product data
40
8 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
A
A1
mounting
base
D1
L2
L1(1)
Q
b1
3
b
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A1
b1
D1
L1(1)
L2
max.
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
EIAJ
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
00-09-07
01-02-16
Product data
9 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
SOT404
A
A1
mounting
base
D1
HD
2
Lp
3
c
b
e
2.5
5 mm
scale
A1
D
max.
D1
Lp
HD
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-02-12
SOT404
Product data
10 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
SOT428
seating plane
y
A
E
A2
A
A1
b2
D1
mounting
base
E1
D
HE
L2
2
L1
b1
w M A
e
e1
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
2.38
2.22
mm
A1(1)
A2
b1
max.
b2
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
D1
E
D
max. max. max.
E1
min.
6.22
5.98
4.0
6.73
6.47
4.81
4.45
e1
2.285 4.57
HE
max.
L1
min.
L2
y
max.
10.4
9.6
2.95
2.55
0.5
0.7
0.5
0.2
0.2
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
EIAJ
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
99-09-13
Product data
11 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
Revision history
Rev Date
02
20011018
CPCN
Description
Product data; second version. Supersedes data PHP98N03LT-01 of 16 July 2001 (9397
750 08338). Modifications:
01
20010716
Product data
12 of 14
PHP/PHB/PHD98N03LT
Philips Semiconductors
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Life support These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Product data
13 of 14
Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13