TrenchStop

IKW40T120
Series

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C

Best in class TO247

Short circuit withstand time 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type
IKW40T120

PG-TO-247-3

VCE

IC

VCE(sat),Tj=25C

Tj,max

Marking Code

Package

1200V

40A

1.7V

150C

K40T120

PG-TO-247-3

Maximum Ratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

1200

DC collector current

IC

TC = 25C

75

TC = 100C

40

Pulsed collector current, tp limited by Tjmax

ICpul s

105

Turn off safe operating area

105

VCE 1200V, Tj 150C

IF

Diode forward current

TC = 25C

80

TC = 100C

40

Diode pulsed current, tp limited by Tjmax

IFpul s

105

Gate-emitter voltage

VGE

20

tSC

10

Ptot

270

W
C

2)

Short circuit withstand time

VGE = 15V, VCC 1200V, Tj 150C

Power dissipation
TC = 25C
Operating junction temperature

Tj

-40...+150

Storage temperature

Tstg

-55...+150

1
2)

J-STD-020 and JESD-022

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPV TD VLS

Rev. 2.3

12.03.2013

TrenchStop
Soldering temperature, 1.6mm (0.063 in.) from case for 10s

IFAG IPV TD VLS

IKW40T120
Series
-

260

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

Thermal Resistance
Parameter

Symbol

Conditions

Max. Value

Unit

RthJC

0.45

K/W

RthJCD

0.81

Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
Thermal resistance,

RthJA

40

junction ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Value
min.

typ.

max.

1200

T j =2 5 C

1.7

2.3

T j =1 2 5 C

2.1

T j =1 5 0 C

2.3

T j =2 5 C

1.75

2.3

T j =1 2 5 C

1.75

T j =1 5 0 C

1.75

5.0

5.8

6.5

Unit

Static Characteristic
Collector-emitter breakdown voltage

V ( B R ) C E S V G E = 0V , I C = 1 .5m A

Collector-emitter saturation voltage

VCE(sat)

Diode forward voltage

VF

V G E = 15 V , I C = 40 A

V G E = 0V , I F = 4 0 A

Gate-emitter threshold voltage

VGE(th)

I C = 1. 5m A, V C E = V G E

Zero gate voltage collector current

ICES

V C E = 12 0 0V ,
V G E = 0V

mA

T j =2 5 C

0.4

T j =1 5 0 C

4.0

Gate-emitter leakage current

IGES

V C E = 0V , V G E =2 0 V

600

nA

Transconductance

gfs

V C E = 20 V , I C = 40 A

21

Integrated gate resistor

RGint

IFAG IPV TD VLS

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

Dynamic Characteristic
Input capacitance

Ciss

V C E = 25 V ,

2500

Output capacitance

Coss

V G E = 0V ,

130

Reverse transfer capacitance

Crss

f= 1 MH z

110

Gate charge

QGate

V C C = 96 0 V, I C =4 0 A

203

nC

13

nH

210

pF

V G E = 15 V
LE

Internal emitter inductance

measured 5mm (0.197 in.) from case
Short circuit collector current

1)

IC(SC)

V G E = 15 V ,t S C 10 s
V C C = 6 0 0 V,
T j = 25 C

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value
min.

typ.

max.

48

34

480

70

3.3

3.2

6.5

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j =2 5 C ,
V C C = 60 0 V, I C = 4 0 A,
V G E = 0/ 15 V ,
R G = 15 ,
2)
L =1 8 0n H,
2)
C = 3 9p F
Energy losses include
tail and diode
reverse recovery.

Diode reverse recovery time

trr

T j =2 5 C ,

240

Diode reverse recovery charge

Qrr

V R = 6 00 V , I F = 4 0 A,

3.8

Diode peak reverse recovery current

Irrm

d i F / d t =8 0 0 A/ s

28

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

370

ns

mJ

Anti-Parallel Diode Characteristic

1)
2)

ns

A/s

Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.

IFAG IPV TD VLS

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

Switching Characteristic, Inductive Load, at Tj=150 C

Parameter

Symbol

Conditions

Value
min.

typ.

max.

52

40

580

120

5.0

5.4

10.4

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j =1 5 0 C
V C C = 60 0 V, I C = 4 0 A,
V G E = 0/ 15 V ,
R G = 1 5 ,
1)
L =1 8 0n H,
1)
C = 3 9p F
Energy losses include
tail and diode
reverse recovery.

Diode reverse recovery time

trr

T j =1 5 0 C

410

ns

Diode reverse recovery charge

Qrr

V R = 6 00 V , I F = 4 0 A,

8.8

Diode peak reverse recovery current

Irrm

d i F / d t =8 0 0 A/ s

36

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

330

ns

mJ

Anti-Parallel Diode Characteristic

1)

A/s

Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.

IFAG IPV TD VLS

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

100A

tp=3s

100A

80A

10s

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

TC=80C
TC=110C

60A

40A

Ic
20A

10A
50s
150s
500s

1A

Ic

20ms
DC

0A
10Hz

100Hz

1kHz

10kHz

0,1A
1V

100kHz

f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15)

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 150C;VGE=15V)

70A
60A

IC, COLLECTOR CURRENT

Ptot, POWER DISSIPATION

250W

200W

150W

100W

50W

0W
25C

50A
40A
30A
20A
10A

50C

75C

100C

0A
25C

125C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of
case temperature
(Tj 150C)

IFAG IPV TD VLS

75C

125C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150C)

Rev. 2.3

12.03.2013

100A

90A

90A

80A

VGE=17V

70A

15V
13V

60A

11V
50A

9V

40A

7V

30A

80A

VGE=17V

70A

15V
13V

60A

11V
50A

9V

40A

7V

30A

20A

20A

10A

10A

0A

0A
0V

1V

2V

3V

4V

5V

6V

0V

100A
90A
80A
70A
60A
50A
40A
30A
20A

TJ=150C
25C

10A
0A
0V

2V

4V

6V

8V

10V

12V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic
(VCE=20V)

IFAG IPV TD VLS

1V

2V

3V

4V

5V

6V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic
(Tj = 150C)

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic
(Tj = 25C)

IC, COLLECTOR CURRENT

Series

100A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

TrenchStop

IKW40T120

3,5V
IC=80A

3,0V
2,5V
2,0V

IC=40A

1,5V

IC=25A

1,0V

IC=10A

0,5V
0,0V
-50C

0C

50C

100C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

td(off)

100ns

t, SWITCHING TIMES

t, SWITCHING TIMES

1000 ns

tf

td(on)
tr

10ns

td(off)
tf
100 ns
td(on)
tr
10 ns

1ns
0A

20A

40A

1 ns

60A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150C,
VCE=600V, VGE=0/15V, RG=15,
Dynamic test circuit in Figure E)

RG, GATE RESISTOR

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

t, SWITCHING TIMES

td(off)

100ns
tf
td(on)
tr

10ns
0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15,
Dynamic test circuit in Figure E)

IFAG IPV TD VLS

7V
6V
max.

5V

typ.
4V
min.
3V
2V
1V
0V
-50C

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.5mA)

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

*) Eon and Ets include losses

due to diode recovery

Ets*

20,0mJ

15,0mJ
Eon*
10,0mJ
Eoff
5,0mJ

0,0mJ
10A

20A

30A

40A

50A

60A

10 mJ
Eon*
Eoff
5 mJ

0 mJ

70A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150C,
VCE=600V, VGE=0/15V, RG=15,
Dynamic test circuit in Figure E)

RG, GATE RESISTOR

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

*) Eon and Ets include losses

due to diode recovery
15mJ

Ets*
10mJ

Eoff
5mJ
Eon*

E, SWITCHING ENERGY LOSSES

15mJ

E, SWITCHING ENERGY LOSSES

Ets*

15 mJ

25,0mJ

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

*) Eon and Etsinclude losses

due to diode recovery

10mJ
Ets*

5mJ E
off

Eon*
0mJ
50C

100C

0mJ
400V

150C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15,
Dynamic test circuit in Figure E)

IFAG IPV TD VLS

500V

600V

700V

800V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150C,
VGE=0/15V, IC=40A, RG=15,
Dynamic test circuit in Figure E)

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

1nF

15V

240V

c, CAPACITANCE

VGE, GATE-EMITTER VOLTAGE

Ciss

960V

10V

Crss

5V

0V

10pF
0nC

50nC

100nC

150nC

200nC

IC(sc), short circuit COLLECTOR CURRENT

10s

5s

12V

14V

20V

300A

200A

100A

0A

16V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25C)

IFAG IPV TD VLS

10V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)

15s

0s

0V

250nC

QGE, GATE CHARGE

Figure 17. Typical gate charge
(IC=40 A)

tSC, SHORT CIRCUIT WITHSTAND TIME

Coss
100pF

10

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 600V, Tj 150C)

Rev. 2.3

12.03.2013

IKW40T120

60A

400V

40A

200V

20A

40A

400V

200V

20A

0A
0us

0.5us

1us

ZthJC, TRANSIENT THERMAL RESISTANCE

0.2
0.1
0.05

-2

10 K/W

R1

, (s)
1.10*10-1
1.56*10-2
1.35*10-3
1.51*10-4
R2

C 1 = 1 /R 1

C 2 = 2 /R 2

-3

10 K/W
10s

0.5us

1us

1.5us

t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=15, Tj = 150C,
Dynamic test circuit in Figure E)

D=0.5

R,(K/W)
0.159
0.133
0.02
0.120
0.01
0.038
single pulse

0V

0A
0us

1.5us

t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=15, Tj = 150C,
Dynamic test circuit in Figure E)

-1

IC

VCE

0V

10 K/W

600V

60A

IC

ZthJC, TRANSIENT THERMAL RESISTANCE

Series

VCE
600V

IC, COLLECTOR CURRENT

VCE, COLLECTOR-EMITTER VOLTAGE

TrenchStop

D=0.5
0.2
-1

10 K/W

0.1
0.05

R,(K/W)
0.228
0.257
0.02
0.238
0.01
0.087
single pulse
R1

-2

, (s)
1.01*10-1
1.15*10-2
1.30*10-3
1.53*10-4
R2

10 K/W
C 1 = 1 /R 1

C 2 = 2 /R 2

-3

100s

1ms

10ms

10 K/W
10s

100ms

tP, PULSE WIDTH

Figure 23. IGBT transient thermal resistance
(D = tp / T)

IFAG IPV TD VLS

11

100s

1ms

10ms

100ms

tP, PULSE WIDTH

Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)

Rev. 2.3

12.03.2013

TrenchStop

Series

TJ=150C

8C

500ns
400ns
300ns

TJ=150C
200ns

TJ=25C

100ns
0ns
400A/s

600A/s

800A/s

Qrr, REVERSE RECOVERY CHARGE

600ns

trr, REVERSE RECOVERY TIME

IKW40T120

6C

4C

TJ=25C
2C

0C
400A/s

1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)

600A/s

800A/s

1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)

TJ=25C
-400A/s

TJ=150C

35A
30A

TJ=25C
25A
20A
15A
10A

dirr/dt, DIODE PEAK RATE OF FALL

OF REVERSE RECOVERY CURRENT

Irr, REVERSE RECOVERY CURRENT

40A

TJ=150C
-300A/s

-200A/s

-100A/s

5A
0A
400A/s

600A/s

800A/s

-0A/s
400A/s

1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)

IFAG IPV TD VLS

12

600A/s

800A/s

1000A/s

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

100A
TJ=25C

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

2,0V IF=80A

150C

80A

60A

40A

1,5V

40A
25A
10A

1,0V

0,5V

20A

0A

0,0V

0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as
a function of forward voltage

IFAG IPV TD VLS

13

-50C

0C

50C

100C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a
function of junction temperature

Rev. 2.3

12.03.2013

TrenchStop

IFAG IPV TD VLS

14

IKW40T120
Series

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series
i,v
tr r =tS +tF

diF /dt

Qr r =QS +QF
tr r
IF

tS
QS

Ir r m

tF

QF

10% Ir r m

dir r /dt
90% Ir r m

t
VR

Figure C. Definition of diodes

switching characteristics
1

r1

r2

rn

Tj (t)
p(t)

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L =180nH
an d Stray capacity C =39pF.

Figure B. Definition of switching losses

IFAG IPV TD VLS

15

Rev. 2.3

12.03.2013

TrenchStop

IKW40T120
Series

Published by
Infineon Technologies AG
81726 Munich, Germany
2013 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPV TD VLS

16

Rev. 2.3

12.03.2013