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TIC126 SERIES

SILICON CONTROLLED RECTIFIERS

12 A Continuous On-State Current

100 A Surge-Current

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max IGT of 20 mA

TO-220 PACKAGE
(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.


MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING

SYMBOL
TIC126D

Repetitive peak off-state voltage

Repetitive peak reverse voltage

TIC126M
TIC126S

VALUE

VDRM

600
700

TIC126N

800

TIC126D

400

TIC126M
TIC126S

VRRM

TIC126N
Continuous on-state current at (or below) 70C case temperature (see Note 1)

UNIT

400

600
700

800
IT(RMS)

12

IT(AV)

7.5

Surge on-state current at (or below) 25C case temperature (see Note 3)

ITM

100

Peak positive gate current (pulse width 300 s)

IGM

Peak gate power dissipation (pulse width 300 s)

PGM

Average on-state current (180 conduction angle) at (or below) 70C case temperature
(see Note 2)

Average gate power dissipation (see Note 4)

PG(AV)

Operating case temperature range

TC

-40 to +110

Storage temperature range

Tstg

-40 to +125

TL

230

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate
linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.




 

APRIL 1971 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
IDRM
IRRM
IGT

Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current

TEST CONDITIONS
VD = rated VDRM

MIN

MAX

UNIT

TC = 110C

mA

mA

20

mA

VR = rated VRRM

IG = 0

TC = 110C

VAA = 12 V

RL = 100

tp(g) 20 s

VAA = 12 V

RL = 100

TC = - 40C

TYP

2.5

tp(g) 20 s
VGT

Gate trigger voltage

VAA = 12 V

RL = 100

0.8

tp(g) 20 s
VAA = 12 V

RL = 100

TC = 110C

tp(g) 20 s
VAA = 12 V
IH

Holding current

dv/dt
NOTE

On-state voltage
Critical rate of rise of
off-state voltage

0.2

TC = - 40C

100

Initiating IT = 100 mA

mA

VAA = 12 V

40

Initiating IT = 100 mA
VT

1.5

IT = 12 A

(see Note 5)

VD = rated VD

IG = 0

1.4
TC = 110C

400

V
V/s

5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER
RJC

Junction to case thermal resistance

RJA

Junction to free air thermal resistance

MIN


2

TYP

MAX

UNIT

2.4

C/W

62.5

C/W


 

APRIL 1971 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS

THERMAL INFORMATION
MAX ANODE POWER LOSS
vs
ON-STATE CURRENT

AVERAGE ON-STATE CURRENT


DERATING CURVE
TI03AE

PA - Max Continuous Anode Power Dissipated - W

IT(AV) - Maximum Average On-State Current - A

16
14
Continuous DC
12
10
= 180

8
6
4
0

180

Conduction

Angle
0
30

40

50

60

70

80

90

100

TI03AF

100
TJ = 110C

10

01
01

110

TC - Case Temperature - C

10

100

Figure 1.

Figure 2.

SURGE ON-STATE CURRENT


vs
CYCLES OF CURRENT DURATION

TRANSIENT THERMAL RESISTANCE


vs
CYCLES OF CURRENT DURATION

TI03AG

10

TC 70C
No Prior Device Conduction
Gate Control Guaranteed
1

TI03AH

10
RJC(t) - Transient Thermal Resistance - C/W

100
ITM - Peak Half-Sine-Wave Current - A

IT - Continuous On-State Current - A

0.1
1

10

100

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 3.



10

100

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 4.


 

APRIL 1971 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS

TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs

GATE TRIGGER CURRENT


vs
CASE TEMPERATURE

CASE TEMPERATURE
TC03AA

TC03AB

VGT - Gate Trigger Voltage - V

IGT - Gate Trigger Current - mA

VAA = 12 V
RL = 100
tp(g) 20 s
10

08

06

04
VAA =12 V
RL = 100

02

1
-50

-25

25

50

75

100

tp(g) 20 s

0
-50

125

-25

25

75

100

125

TC - Case Temperature - C

TC - Case Temperature - C

Figure 5.

Figure 6.

PEAK ON-STATE VOLTAGE


vs
PEAK ON-STATE CURRENT

HOLDING CURRENT
vs
CASE TEMPERATURE
100

TC03AD

TC03AH

25
TC = 25 C
tp = 300 s

VAA = 12 V
VTM - Peak On-State Voltage - V

Initiating IT = 100 mA
IH - Holding Current - mA

50

10

Duty Cycle 2 %

15

05

1
-50

-25

25

50

75

TC - Case Temperature - C

Figure 7.

100

125

0
01

10

Figure 8.


4

100

ITM - Peak On-State Current - A


 

APRIL 1971 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.