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A short circuit
An open circuit
3.4v
0.6v
5v
Lower
The same
Cannot be determined
1M8
330R
4k4
Higher
Lower
Turn on
Turn off
Load Resistor
Bypass Resistor
100n
110n
Cannot be determined
22k 5%
2k2 5%
220R 5%
22R 5%
The Base
The Emitter
The case
5k
20k
Cannot be determined
PNP Transistor
Photo Transistor
0v
6v
2k3
9k4
Common Base
Common Collector
Common Emitter
Emitter Follower
combination is:
100n
200n
50n
Load Resistor
Bypass Resistor
Schmitt Circuit
35,200 ohms
55k
Forward
Parallel
Series
A Timing Circuit
A Delay Circuit
A Schmitt Circuit
Rise
Fall
Remain Fixed
Oscillate
0.0001u
0.1n
1n
0.00045A
0.0045A
0.45A
u = microfarad
0.01u
0.001u
0.001A
0.00001A
0.01A
0.1A
1.2v
0.12v
0.0012v
33. If a 10k resistor is placed across a 10v supply, the current will be:
10mA
1mA
0.01mA
0.1mA
Common Emitter
Common Base
1.7mA
25mA
65mA
Inverted . . .
In-phase . . .
operate
41. A DC voltage . . .
rises and falls
is a sinewave
remains constant
is an audio waveform
42. A CRO is a
Cathode Ray Oscillator
Capacitor-Resistor Oscillator
Capacitor-Resistor Output
10%, 5%, 1%
5%, 10%, 2%
5%, 10%,
1%
10%, 5%, 2%
u = microfarad
22n
n = nanofarad
22,000p
p = picofarad
n, u, p
p, n, u
A NOR gate
A NAND gate
A Schmitt Trigger
100n
1n
10n
50. For the XOR gate, what is the output when both inputs are HIGH:
HIGH
LOW
Cannot be determined
1.
Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
A.
B.
C.
D.
2.
Ionization within a P-N junction causes a layer on each side of the barrier called the:
A.
junction
B.
depletion region
C.
barrier voltage
D.
forward voltage
3.
What is the most significant development in electronics since World War II?
A.
B.
C.
D.
4.
What causes the depletion region?
A.
doping
B.
diffusion
C.
barrier potential
D.
ions
5.
What is an energy gap?
A
the space between two orbital shells
.
B
.
the energy equal to the energy acquired by an electron passing a 1 V electric field
C
.
D
an energy level at which an electron can exist
.
6.
Silicon atoms combine into an orderly pattern called a:
A
covalent bond
.
B
.
crystal
C
.
semiconductor
D
valence orbit
.
7.
In "n" type material, majority carriers would be:
A.
holes
B.
dopants
C.
slower
D.
electrons
8.
Elements with 1, 2, or 3 valence electrons usually make excellent:
A.
conductors
B.
semiconductors
C.
insulators
D.
neutral
9.
A commonly used pentavalent material is:
1
0.
A.
arsenic
B.
boron
C.
gallium
D.
neon
A
carbon
.
B
.
C
.
D
argon
.
mica
ceramic
A
holes
.
B
.
dopants
C
.
slower
D
electrons
.
A.
magnetism
B.
temperature
C.
pressure
D.
A.
energy gap
B.
hole
C.
electron-hole pair
D.
recombination
A.
0.2
B.
0.3
C.
0.7
D.
0.8
A
germanium
.
B
.
C
.
D
carbon
.
tin
silicon
When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:
A
1949, William Schockley
.
B
.
C
.
D
1960, John Bardeen
.
View Answer Workspace Report Discuss in Forum
17.
When is a P-N junction formed?
A.
in a depletion region
B.
C.
D.
A.
B.
is reverse biased
C.
D.
A.
World War 2
B.
1904
C.
1907
D.
1960
2
0.
A
lack electrons
.
B
.
share holes
C
.
lack holes
D
share electrons
.
View Answer Workspace Report Discuss in Forum
2
1.
A
1
.
B
.
C
.
D
4
.
A.
B.
pentavalent material
C.
n-type semiconductor
D.
majority carriers
A.
heat
B.
pressure
C.
dopants
D.
forward bias
24.
What is the voltage across R1 if the P-N junction is made of silicon?
A.
12 V
B.
11.7 V
C.
11.3 V
D.
0V
A
positive coefficient
.
B
.
C
.
negative coefficient
D
positive resistance
.
View Answer Workspace Report Discuss in Forum
2
6.
A
majority carriers
.
B
.
ions
C
.
holes
D
free electrons
.
View Answer Workspace Report Discuss in Forum
27.
What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?
A.
conductivity
B.
resistance
C.
power
D.