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Abstract:
IGBT modules normally contain the rated current and voltage in their type designation.
Therefore the rated current is often taken as the first value to compare modules from different
competitors. This is a misleading practice since the definition of the rated current differs
significantly between the modules and manufacturers. In order to allow the user of IGBT
modules to compare various types of IGBTs in a realistic application environment we have
developed a fast and simple to use simulation-tool. With this tool it is possible to compute
static and transient losses and temperature rises in IGBT modules as well as optionally
specified heatsinks in a two-level voltage source inverter topology.
The paper shows examples of simulations with different conditions and module types and
describes the calculation methods employed in the simulation-tool.
Introduction:
revised 01.07.05
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2
1
2
1
Pcond = 12 (VCE0 + rCE ) + m cos (VCE0 + rCE 2 ) Pcond = 1 (VF0 + rT ) m cos (VT 0 + rT 2 )
2
4
8 3
4
8 3
(2b)
(5)
The simulation-tool restricts the modulation index In case of the diode the turn-on energy can be
to m1, which is the linear mode of the PWM.
neglected. Therefore only the recovery energy
counts. The recovery energy given in the dataThe switching losses are the sum of all turn-on sheet diagram can be described as a polynomial
and turn-off energies at the switching events.
function:
The measured turn-on and turn-off energies given
in the data-sheet can be described as a
E rec = (a + b I + c I 2 )
(6)
polynomial function (Esw=f(I)):
E sw = Eon + Eoff = (a + b I + c I 2 )
(3)
E sw = (a + b + c 2 )
VDC
Vnom
(3a)
1
Psw = E sw ( )
T0 n
(3b)
(4)
a b c 2 V DC
Prec = f sw ( +
+
)
2
4
Vnom
(6a)
(7)
Thermal Calculation:
a b c 2 V DC
Psw = f sw ( +
+
)
2
4
Vnom
The recovery losses as a function of phasecurrent and switching frequency and VDC can be
written as:
revised 01.07.05
Page 2 of 6
400
Tj
Ic
graph of figure 1 and matches in terms of the Thermal equivalent block diagram:
peak and bottom values quite well with the real The simplification done in the simulation-tool is
value of Tj.
the assumption of common reference temperature
point where the temperature is assumed to be
800
125
homogenous over the full area. In case of base120
less devices this reference is the heatsink
600
temperature (figure 2):
115
Ic [A]
Tj [C]
200
110
Base-less Modules
105
0
0.060
0.065
0.070
0.075
0.080
0.085
0.090
0.095
Switch 1
Switch n
100
0.100
PIGBT
t [s]
PDiode
ZthJH
Psmoothed [W]
Pav [W]
Pmod [W]
Tjmod [C]
Tjav [C]
1600
1400
1200
PDiode
ZthJH
ZthJH
125
Reference: Th
120
ZthHA
1000
115
Tj
PIGBT
ZthJH
800
110
600
400
105
200
0
0.060
0.065
0.070
0.075
0.080
0.085
0.090
0.095
100
0.100
t [s]
1 e
2 f O i
+ Tref
1
f O i
(8)
Switch 1
PIGBT
Switch n
PDiode
ZthJC
PIGBT
ZthJC
PDiode
ZthJC
ZthJC
Reference: Tc
RthCH
ZthHA
revised 01.07.05
Page 3 of 6
TCH = ( PIGBT
R
+ PDiode ) n S thCH
nM
TH (t ) = TA
(10)
THstart TA
Z thHA (t ) + P(T ) Z thHA (t )
RthHA
(12a)
(12b)
revised 01.07.05
(14)
Page 4 of 6
1
The same modules have been simulated as well
2 fOi
n
P
T
ref
th
1
i=1
1500
1000
500
T [C]
80
60
40
Tj IGBT [C]
Tj Diode [C]
Tc [C]
Th [C]
20
0
0
10
15
20
25
30
35
1000
2000
3000
fsw [Hz]
4000
5000
6000
t overload [s]
Benchmarking:
The Simulation-tool allows for two types of
calculations. One of them is with a fixed
heatsink/case temperature and the other with a
fixed ambient temperature, which allows the user
to include the heatsink into the calculation.
The calculation with a fixed heatsink/case
temperature is a quick method that does not
require specifying or selecting a heatsink. It is
suitable for comparisons of IGBTs with exactly the
same package. Nevertheless if devices with
different packages have to be compared or if the
results have to be more application relevant the
method including the heatsink in the calculation
should be used.
Figure 5 shows the simulation results for three
modules in the same package all with the nominal
current rated at Tc=80C. The diagram shows the
maximum rms-output current versus the switching
frequency if the junction temperature is limited to
125C with a given case-temperature of
Tc=100C.
2000
Inom=1800A@Tc=80C
Iout, rms [A]
1500
1000
500
0
0
1000
2000
3000
fsw [Hz]
4000
5000
6000
revised 01.07.05
Page 5 of 6
Module
IGBT
Diode
RthJC [K/kW]
RthJC [K/kW]
9.0
7.0
7.0
17
12
16
Inom=1800A
Inom=2400A
Inom=3600A
2500.0
Iout, rms [A]
Inom=1800A@Tc=80C
2000.0
1500.0
References:
1000.0
1.
2.
3.
500.0
0.0
0
1000
2000
3000
fsw [Hz]
4000
5000
6000
Acknowledges:
Dr. J.Waldmeyer for providing simulation results using the
convolution method (fig. 1)
Conclusions:
The comparison of IGBTs with the nominal
current is inaccurate and can lead to wrong
results. Due to thermal limitations it is in most
cases not possible to reach an inverter outputcurrent as high as the module nominal current in a
realistic application environment.
revised 01.07.05
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