IPD09N03L

OptiMOS Buck converter series

Product Summary

Feature
N-Channel

VDS

30

Logic Level

RDS(on)

8.9

Low On-Resistance R DS(on)

ID

30

Excellent Gate Charge x R DS(on) product (FOM)

P- TO252 -3-11

Superior thermal resistance

175C operating temperature

Avalanche rated
dv/dt rated
Ideal for fast switching buck converter

Type
IPD09N03L

Package
Ordering Code
P- TO252 -3-11 Q67042-S4110

Marking
09N03L

Maximum Ratings, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Continuous drain current1)

ID

Value

Unit
A

TC=25C

30

TC=100C

30
ID puls

120

EAS

150

Repetitive avalanche energy, limited by Tjmax 2)

EAR

10

Reverse diode dv/dt

dv/dt

Gate source voltage

VGS

20

Power dissipation

Ptot

100

-55... +175

Pulsed drain current

TC=25C

Avalanche energy, single pulse

mJ

ID=30A, V DD=25V, RGS=25

kV/s

IS=30A, VDS=24V, di/dt=200A/s, T jmax=175C

TC=25C

Operating and storage temperature

T j , Tstg

IEC climatic category; DIN IEC 68-1

55/175/56

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2002-01-17

IPD09N03L
Thermal Characteristics
Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics
Thermal resistance, junction - case

RthJC

1.5

Thermal resistance, junction - ambient, leaded

RthJA

100

SMD version, device on PCB:

RthJA
-

75

50

@ min. footprint
@ 6 cm2 cooling area

3)

K/W

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

V(BR)DSS

30

VGS(th)

1.2

1.6

Static Characteristics
Drain-source breakdown voltage

V GS=0V, ID=1mA

Gate threshold voltage, VGS = V DS

ID = 50 A

Zero gate voltage drain current

IDSS

V DS=30V, VGS=0V, Tj=25C

0.01

V DS=30V, VGS=0V, Tj=125C

10

100

IGSS

100

nA

RDS(on)

10.6

13.6

RDS(on)

7.2

8.9

Gate-source leakage current

V GS=20V, VDS=0V

Drain-source on-state resistance

V GS=4.5V, I D=30A

Drain-source on-state resistance

V GS=10V, I D=30A

1Current limited by bondwire ; with an R

thJC = 1.5K/W the chip is able to carry ID= 83A at 25C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
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2002-01-17

IPD09N03L
Electrical Characteristics
Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

23.8

47.5

Dynamic Characteristics
Transconductance

gfs

VDS 2*ID *RDS(on)max,

ID =30A

Input capacitance

Ciss

VGS =0V, VDS =25V,

1160

Output capacitance

Coss

f=1MHz

450

600

Reverse transfer capacitance

Crss

120

175

Gate resistance

RG

1.5

Turn-on delay time

td(on)

VDD =15V, VGS =10V,

7.4

11.1

ns

Rise time

tr

ID =15A,

13

20

Turn-off delay time

td(off)

RG =5.4

28.4

42.6

Fall time

tf

7.6

11.4

Gate Charge Characteristics

Gate to source charge

Qgs

Gate to drain charge

Qgd

9.2

12.5

Gate charge total

Qg

18.2

24.2

16.5

21.9

nC

V(plateau) VDD =15V, ID =15A

2.7

IS

30

120

VDD =15V, ID =15A

VDD =15V, ID =15A,

1550 pF

nC

VGS =0 to 5V

Output charge

Qoss

VDS =15V, ID =15A,

VGS =0V

Gate plateau voltage

Reverse Diode
Inverse diode continuous

TC=25C

forward current
Inv. diode direct current, pulsed

ISM

Inverse diode forward voltage

VSD

V GS=0V, IF=30A

0.9

1.2

Reverse recovery time

trr

V R=-V, IF=lS,

31

39

ns

Reverse recovery charge

Qrr

diF/dt=100A/s

29

37

nC

Page 3

2002-01-17

IPD09N03L
1 Power dissipation

2 Drain current

Ptot = f (TC)

ID = f (T C)
parameter: VGS 10 V

IPD09N03L

110

IPD09N03L

32

90
24

70

ID

P tot

80

20

60
16
50
12

40
30

20
4
10
0
0

20

40

60

80

100 120 140 160 C 190

20

40

60

80

100 120 140 160 C 190

TC

TC

3 Safe operating area

4 Max. transient thermal impedance

ID = f ( VDS )

ZthJC = f (tp)

parameter : D = 0 , TC = 25 C

parameter : D = t p/T

10

3 IPD09N03L

10

1 IPD09N03L

K/W
A

/I

10

Z thJC

DS

t = 10.0s
p

10

-1

10

-2

DS
(on
)

ID

10

100 s

D = 0.50

10

0.20

0.10
1 ms

0.05

single pulse
10 ms

10

0.02

-3

0.01

DC

10

10

-1

10

10

10

10

-4

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

tp

VDS
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2002-01-17

IPD09N03L
5 Typ. output characteristic

6 Typ. drain-source on resistance

ID = f (VDS); Tj=25C

RDS(on) = f (ID)

parameter: tp = 80 s

parameter: VGS

IPD09N03L

75

IPD09N03L

30

Ptot = 100W

60
55
c

ID

50
45

3.0

3.5

4.0

4.5

5.0

5.5

24

R DS(on)

V
[V]
GS
a

fe d

22
20
18

40

16

35

14

30

12
b

25
20

15

10

10
e
f

4 VGS [V] =

b
3.5

0
0

0.5

1.5

2.5

3.5

c
4.0

d
4.5

e
5.0

f
5.5

0
5

10

20

30

40

8 Typ. forward transconductance

ID= f ( VGS ); V DS 2 x ID x RDS(on)max

g fs = f(I D); T j=25C

parameter: tp = 80 s

parameter: g fs

60

60

50

50

45

45

40

40

g fs

ID

7 Typ. transfer characteristics

35

35

30

30

25

25

20

20

15

15

10

10

0
0

0.5

1.5

2.5

3.5

60

ID

VDS

V 5
V GS

10

20

30

40

60

ID

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2002-01-17

IPD09N03L
9 Drain-source on-state resistance

10 Typ. gate threshold voltage

RDS(on) = f (Tj)

VGS(th) = f (T j)

parameter : ID = 30 A, VGS = 10 V

parameter: VGS = VDS

IPD09N03L

20

2.5

m
V
500A

V GS(th)

R DS(on)

16
14
12

1.5

98%

10

50A

typ

6
4

0.5

2
0
-60

-20

20

60

140 C

100

0
-60

200

-20

20

60

100

Tj

180

Tj

11 Typ. capacitances

12 Forward character. of reverse diode

C = f (V DS)

IF = f (V SD)

parameter: VGS=0V, f=1 MHz

parameter: T j , tp = 80 s

10

10

3 IPD09N03L

pF
2

10

IF

Ciss
10

10

C oss
T j = 25 C typ
T j = 175 C typ
T j = 25 C (98%)

Crss
10

T j = 175 C (98%)

10
5

10

15

20

30

0.4

0.8

1.2

1.6

2.4 V

VSD

VDS
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2002-01-17

IPD09N03L
13 Typ. avalanche energy

15 Drain-source breakdown voltage

E AS = f (T j)

V(BR)DSS = f (Tj)

par.: I D = 30 A, V DD = 25 V, R GS = 25

parameter: ID=10 mA
36

160

V(BR)DSS

mJ

120

E AS

IPD09N03L

100

34
33
32

80
31
60
30
40

29

20

28

0
25

45

65

85

105

125

145

C 185
Tj

27
-60

-20

20

60

100

140 C

200

Tj

14 Typ. gate charge

VGS = f (QGate)
parameter: ID = 15 A pulsed
IPD09N03L

16
V

VGS

12

10

0.2 VDS max

0.5 VDS max

0.8 VDS max

0
0

10

20

30

40

nC

55

QGate
Page 7

2002-01-17

IPD09N03L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
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Page 8

2002-01-17

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