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1. General description
The TDA6108AJF contains three video output amplifiers which are intended to drive the
three cathodes of a color CRT. The device is contained in a plastic DIL-bent-SIL 9-pin
medium power (DBS9MPF) package, and uses high-voltage DMOS technology.
To obtain maximum performance, the amplifier should be used with black-current control.
2. Features
3. Ordering information
Table 1:
Ordering information
Type number
Package
Name
Description
Version
TDA6108AJF
DBS9MPF
SOT111-1
TDA6108AJF
Philips Semiconductors
4. Block diagram
VDD
6
MIRROR 5
MIRROR 1
TDA6108AJF
CASCODE 1
MIRROR 4
CURRENT
SOURCE
9, 8, 7
Voc(1),
Voc(2),
Voc(3)
1
THERMAL
PROTECTION
CIRCUIT
Vi(1),
Vi(2),
Vi(3)
1, 2, 3
Rf
VIP
REFERENCE
DIFFERENTIAL
STAGE
MIRROR 3
Ri
Iom
Ra
CASCODE 2
MIRROR 2
4
mce462
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5. Pinning information
5.1 Pinning
Vi(1)
Vi(2)
Vi(3)
GND
Iom
5 TDA6108AJF
VDD
Voc(3)
Voc(2)
Voc(1)
9
001aac594
Pin description
Symbol
Pin
Description
Vi(1)
inverting input 1
Vi(2)
inverting input 2
Vi(3)
inverting input 3
GND
ground
Iom
VDD
supply voltage
Voc(3)
cathode output 3
Voc(2)
cathode output 2
Voc(1)
cathode output 1
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6. Internal circuitry
to cascode
stage
GND
VDD
6
to black-current
measurement circuit
TDA6108AJF
1, 2, 3
(1)
esd
from
input
circuit
flash
7, 8, 9
esd
esd
to black-current
measurement circuit
from
input
circuit
from
control
circuit
5
esd
6.8 V
Vbias
from blackcurrent
measurement
circuit
from
control
circuit
esd
esd
to black-current
measurement circuit
to black-current
measurement circuit
mce465
(1) All pins have an energy protection for positive or negative overstress situations.
7. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Voltages measured with respect to ground; currents as specified in Figure 9; unless otherwise specified.
Symbol
Parameter
Min
Max
Unit
VDD
supply voltage
Conditions
250
Vi
12
Vom
|Iom(mean)|
5.6
mA
Voc
VDD
Tstg
storage temperature
55
+150
Tj
junction temperature
Vesd
Voc = 0 V to VDD;
Vom = 1.5 V to 6 V
20
+150
3000
300
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8. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
in free air
56
K/W
Rth(j-fin)
11
K/W
[1]
[1]
mbh989
8
Ptot
(W)
(1)
(2)
0
40
40
80
120
160
Tamb (C)
outputs
5 K/W
thermal protection circuit
6 K/W
fin
mgk279
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9. Characteristics
Table 5:
Characteristics
Operating range: Tj = 20 C to +150 C; VDD = 180 V to 210 V; test conditions: Tamb = 25 C; VDD = 200 V;
Voc(1) = Voc(2) = Voc(3) = 0.5VDD; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth(h-a) = 18 K/W; measured
in test circuit of Figure 9; unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
Iq
Conditions
7.9
9.4
10.8
mA
Vref(int)
2.5
V
k
Ri
input resistance
2.1
gain of amplifier
73
81
89
gain difference
4.2
+4.2
65
dB
50
dB
10
V
A
PSRR
ct(DC)
f < 50 kHz
[1]
clamping voltage of
measurement output
Iom(offset)
Ioc = 0 A;
Vom = 1.5 V to 6 V
50
+50
Iom/Ioc
0.9
1.0
1.1
0.9
1.0
1.1
DC output voltage
Ii = 0 A
76
87
97
Voc(DC)(offset)
+5
Voc(T)
10
mV/K
Voc(T)(offset)
mV/K
Ioc(max)
28
mA
10
Voc(min)
Voc = 50 V to VDD 50 V
Vi = 4.5 V; at Ioc = 0 mA
[2]
[2]
Voc(max)
Vi = 0.5 V; at Ioc = 0 mA
BS
Voc = 60 V (p-p)
BL
VDD 15 -
9.0
MHz
8.0
MHz
32
ns
toc(p)
[3]
toc(p)
[3]
10
+10
ns
toc(r)
[3]
35
50
70
ns
toc(f)
[3]
35
50
65
ns
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Table 5:
Characteristics continued
Operating range: Tj = 20 C to +150 C; VDD = 180 V to 210 V; test conditions: Tamb = 25 C; VDD = 200 V;
Voc(1) = Voc(2) = Voc(3) = 0.5VDD; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth(h-a) = 18 K/W; measured
in test circuit of Figure 9; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
350
ns
tst
[3]
SR
[3]
1310
V/s
Ov
[3]
10
[1]
The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.
[2]
[3]
f < 1 MHz; tr = tf = 40 ns [pins Vi(1), Vi(2) and Vi(3)] see Figure 7 and Figure 8.
mce455
200
Voc
(V)
160
120
80
40
0
0
4
Vi (V)
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Philips Semiconductors
2.96
Vi
(V)
2.34
t
1.73
tst
Ov (in %)
151
150
140
149
Voc
(V)
100
60
50
t
toc(r)
tco(p)
mce477
Fig 7. Output voltage [pins Voc(1), Voc(2) and Voc(3)] rising edges as a function of the AC
input signal
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2.96
Vi
(V)
2.34
t
1.73
tst
150
140
Voc
(V)
100
Ov (in %)
51
60
50
49
t
toc(f)
tco(p)
mce476
Fig 8. Output voltage [pins Voc(1), Voc(2) and Voc(3)] falling edges as a function of the AC
input signal
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Philips Semiconductors
10.3 Bandwidth
The addition of the flash resistor produces a decreased bandwidth and increases the rise
and fall times.
10.4 Dissipation
A distinction must first be made between static dissipation (independent of frequency) and
dynamic dissipation (proportional to frequency).
The static dissipation of the TDA6108AJF is due to voltage supply currents and load
currents in the feedback network and CRT.
The static dissipation Pstat equals: Pstat = VDD IDD + 3 Voc Ioc
Where:
VDD = supply voltage
IDD = supply current
Voc = DC value of cathode output voltage
Ioc = DC value of cathode output current.
The dynamic dissipation Pdyn equals: Pdyn = 3 VDD (CL + Cint) fi Voc(p-p)
Where:
CL = load capacitance
Cint = internal load capacitance (4 pF)
fi = input frequency
Voc(p-p) = cathode output voltage (peak-to-peak value)
= non-blanking duty factor.
The TDA6108AJF must be mounted on the picture tube base print to minimize the load
capacitance.
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Philips Semiconductors
J1
22 F
Rf
Vi(1) 1
Ri
Vof
C2
C10
6.8 pF
Iom
22 nF
C8
10 F
9 Voc(1)
1
Ra
C7
20 nF
R1
2 M
C9
3.2 pF
C3
J2
22 F
Rf
Vi(2) 2
Ri
Vof
C4
Ra
C11
136 pF
R2
100 k
C13
6.8 pF
R3
2 M
C14
136 pF
R4
100 k
C16
6.8 pF
R5
2 M
C17
136 pF
R6
100 k
8 Voc(2)
2
Iom
22 nF
probe 1
C12
3.2 pF
C5
22 F
J3
Rf
Vi(3) 3
Ri
Vof
C6
probe 2
7 Voc(3)
3
Ra
22 nF
C15
3.2 pF
VIP
REFERENCE
probe 3
5 Iom
TDA6108AJF
4
GND
Vom
4V
mce464
Current sources J1, J2 and J3 must be adjusted so that the DC output voltage of pins Voc(1), Voc(2) and Voc(3) is set to 100 V.
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SOT111-1
D1
A2
q
P
P1
A3
q2
q1
seating plane
A4
pin 1 index
L
1
9
e2
Z
b2
w M
b1
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
18.5
17.8
A2
A3
max.
3.7
8.7
8.0
A4
b1
b2
D (1)
D1
E (1)
e2
15.5 1.40 0.67 1.40 0.48 21.8 21.4 6.48 2.54 2.54
15.1 1.14 0.50 1.14 0.38 21.4 20.7 6.20
P1
3.9
3.4
2.75
2.50
3.4
3.2
1.75 15.1
1.55 14.9
q1
q2
Z (1)
max.
4.4
4.2
5.9
5.7
0.25
65o
o
55
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
95-03-11
03-03-12
SOT111-1
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14. Soldering
14.1 Introduction to soldering through-hole mount packages
This text gives a brief insight to wave, dip and manual soldering. A more in-depth account
of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages
(document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of through-hole mount IC packages
on a printed-circuit board.
Package
Soldering method
Dipping
Wave
CPGA, HCPGA
suitable
suitable
suitable [1]
PMFP [2]
not suitable
[1]
For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit
board.
[2]
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Revision history
Document ID
Release date
Change notice
Doc. number
Supersedes
TDA6108AJF_3
20050420
TDA6108AJF_2
Modifications:
TDA6108AJF_2
Modifications:
TDA6108AJF_1
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors
040630
Preliminary
specification
TDA6108AJF_1
030919
Preliminary
specification
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Philips Semiconductors
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
17. Definitions
18. Disclaimers
Life support These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
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20. Contents
1
2
3
4
5
5.1
5.2
6
7
8
8.1
9
10
10.1
10.2
10.3
10.4
11
11.1
12
13
14
14.1
14.2
14.3
14.4
15
16
17
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 1
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Thermal protection . . . . . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application information. . . . . . . . . . . . . . . . . . . 9
Flashover protection . . . . . . . . . . . . . . . . . . . . . 9
Switch-off behavior . . . . . . . . . . . . . . . . . . . . . 10
Bandwidth . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
Quality information . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Handling information. . . . . . . . . . . . . . . . . . . . 13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Introduction to soldering through-hole
mount packages . . . . . . . . . . . . . . . . . . . . . . . 13
Soldering by dipping or by solder wave . . . . . 13
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 13
Package related soldering information . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information . . . . . . . . . . . . . . . . . . . . 15