Spec. No.

: C223A3
Issued Date : 2003.07.30
Revised Date : 2004.02.26

CYStech Electronics Corp.

Page No. : 1/4

General Purpose NPN Epitaxial Planar Transistor

BTN8050A3
Description
The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation.

Features

High collector current , IC = 1.5A

Low VCE(sat)
Complementary to BTP8550A3.

Symbol

Outline
BTN8050A3

TO-92

BBase
CCollector
EEmitter

ECB

Absolute Maximum Ratings (Ta=25C)

Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature

BTN8050A3

Symbol

Limits

Unit

VCBO
VCEO
VEBO
IC
IB
Pd
Tj
Tstg

40
25
6
1.5
0.5
625
150
-55~+150

V
V
V
A
A
mW
C
C

CYStek Product Specification

CYStech Electronics Corp.

Spec. No. : C223A3

Issued Date : 2003.07.30
Revised Date : 2004.02.26
Page No. : 2/4

Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob

Min.
40
25
6
45
85
40
100
-

Typ.
-

Max.
100
100
0.5
1.2
1
500
20

Unit
V
V
V
nA
nA
V
V
V
MHz
pF

Test Conditions
IC=100A
IC=2mA
IE=100A
VCB=35V
VEB=6V
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%

Classification Of hFE2
Rank
Range

BTN8050A3

B
85~160

C
120~200

D
160~320

E
250~500

CYStek Product Specification

CYStech Electronics Corp.

Spec. No. : C223A3

Issued Date : 2003.07.30
Revised Date : 2004.02.26
Page No. : 3/4

Characteristic Curves
Saturation Voltage vs Collector Current

Current Gain vs Collector Current

1000

1000
Saturation Voltage---(mV)

Current Gain---HFE

VCE = 5V

VCE = 2V

100

VCE = 1V

10

100

VCE(SAT) @ IC=20IB

10
VCE(SAT) @ IC=10IB

1
1

10
100
1000
Collector Current---IC(mA)

10000

Saturation Voltage vs Collector Current

10000

On Voltage vs Collector Current

10000

1000
VBE(SAT) @ IC=10IB

On Voltage---(mV)

Saturation Voltage---(mV)

10
100
1000
Collector Current---IC(mA)

1000

100

VBE(ON) @ VCE=1V

100
1

10
100
1000
Collector Current---IC(mA)

10000

10
100
1000
Collector Current---IC(mA)

10000

Power Derating Curve

Power Dissipation---PD(mW)

700
600
500
400
300
200
100
0
0

50

100

150

200

Ambient Temperature---TA()

BTN8050A3

CYStek Product Specification

Spec. No. : C223A3

Issued Date : 2003.07.30
Revised Date : 2004.02.26

CYStech Electronics Corp.

Page No. : 4/4

TO-92 Dimension

Marking:

A
B
1

8050

H
I

Style: Pin 1.Emitter 2.Collector 3.Base

E
F

3-Lead TO-92 Plastic Package

CYStek Package Code: A3

*: Typical

Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480

DIM
A
B
C
D
E
F

Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76

DIM
G
H
I
1
2
3

Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5
*2
*2

Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5
*2
*2

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BTN8050A3

CYStek Product Specification