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DEPARTMENT OF ELECTRONICS AND COMPUTER ENGINEERING

INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
EC -102
Problem Sheet V
Autumn 2007-08
(BJT Biasing schemes)
Consider a CE fixed-bias circuit with VCC = 8V and RC = 2 k. A silicon npn transistor having characteristics
shown in Fig.1 is used.
(a)
Draw the load line on the output characteristics.
(b)
Choose an operating point midway between cutoff and saturation and determine the values of
IBQ, and VBEQ. Also determine the base circuit resistance RB to establish this Q point.
(c)
Determine ICQ, VCEQ.
(d)
Determine the dc and ac at the operating point. What are the corresponding values of .
(e)
What are IC,sat and VCE,sat for this design?
(f)
Determine the total dc power dissipated by the device at this operating point.
(g)
What is the power supplied by VCC?
(h)
What is the total power dissipated by the resistive elements in the circuit?
(i)
If the input signal is a current source ib = 7.5 sint (A), sketch the ac collector current, ac
collector-emitter voltage, and ac base-emitter voltage. In each case, specify the minimum and
maximum values. Also, sketch the total instantaneous values of base current, collector current,
base-emitter voltage, and collector-emitter voltage.
(j)
Discuss whether the operating point is suitable for the signal applied in (i).
(k)
Now consider an input signal ib = 2.5 sint (A) and repeat part (i).
(l)
Discuss whether the operating point is suitable for the signal applied in part (k).
(m)
If the transistor specifications are VCE,max = 8V, IC,max = 5 mA, and PC,max = 12 mW, determine
the region of the characteristics in which the transistor can be used.
For the circuit shown in Fig. 2, determine IC, VCC, , and RB.
If the circuit in Fig. 2 has VCC = 16V, RC = 2.2 k, = 90, VCE,sat = 0.2V, and VBE,sat = 0.8V, what is the
saturation current IC,sat? Choose RB for the transistor to operate in the saturation region and verify that the
transistor is indeed in saturation region for the chosen value of RB.
In the fixed-bias circuit shown in Fig. 3, determine IC and VCE. Now increase by 50% and determine the
percentage change in IC and VCE.
For the emitter-stabilized bias circuit shown in Fig. 4, determine RC, RE, RB, VCE, and VB. Now consider the
circuit with the calculated resistance values. If is increased by 50%, what will be the percentage change in
IC and VCE?
For the circuit shown in Fig. 5, determine IBQ, ICQ, VCEQ, VC, VE, and VB. Now increase by 50% and
determine the percentage change in ICQ and VCEQ. Giving reasons, discuss if the circuit provides bias
stability.
Determine the saturation current for the circuit of Fig. 5.
Consider the self-bias circuit shown in Fig. 6. Determine IC, VCE, IB, VE, and VB using both the exact
solution and the approximate solution (IB 0). Is the approximate solution justified?
Determine IC and VCE for the circuit shown in Fig. 7. Increase by 50% and calculate the percentage
chance in IC and VCE.
For the circuit shown in Fig. 8, determine IE, IB, VCE, and VCB.
Design a voltage divider bias network using a supply of 24 V, a transistor with = 110, and an operating
point ICQ = 4 mA and VCEQ = 8 V. Choose VE = VCC/8. Given that following standard resistors are available
for use: 680, 750, 820, 3 k, 3.0 k, 3.3 k, 3.6 k, 7.5 k, 8.2 k, 9.1 k, 43 k, 47 k, 51 k.
The transistors in the circuit shown in Fig. 9 have a = 120. Estimate the potentials at collector currents
and the collector-to-emitter potentials for both transistors.
All transistors in the circuit of Fig. 10 are identical and have = 120. Estimate the collector voltage of
transistor Q2. (Hint:- Determine the collector current of the transistor Q3 first and take advantage of the
symmetry of the circuit.)
(a)
For the emitter-bias CE circuit, derive the stability factors S(ICO) and S(VBE).
(b)
For the circuit of Fig. 11, determine (i) S(ICO), (ii) S(VBE), (iii) S(), taking T1 as the temperature at
which the parameter values are specified and T2 as the temperature at which (T2) is greater than
(T1) by 25%, (iv) net change in IC, if the change in operating conditions results in ICO increasing
from 0.2 to 10 A, VBE drops from 0.7 to 0.5 V, and increases 25%.

Fig. 1(a)

Fig. 1(b)
2

VCC

16 V

RC=2.2 k

RB

20 A

2.7 k

470 k

VCE=7.2V

Fig. 2

=90
Fig. 3

4 mA

12 V

RB

16 V

2 mA

RC

3.9 k

62 k

7.6 V
= 80

= 80
2.4 V

Fig. 4

9.1 k

680

RE
Fig. 5
18 V
22 V
39 k

3.3 k
9.1 k
470 k
= 120
= 90

8.2 k

1 k

Fig. 7
9.1 k

Fig. 6