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R 3283
DEGREE EXAMINATION, NOVEMBER/DECEMBER 2007.
B.E./B.TECh.
Third Semester
(Regulation2004)
Electronics and Communication Engineering
EC L2O2- ELECTRON DEVICES
co
m
N.
va
2.
3.
4.
How do the transition region width and contact potential across a pn junction
vary with the applied bias voitage?
5.
6.
7.
A BJThas 1" =I}ltA, F =99 and I"o =l pA. Determine the collectorcurrent.
8.
g.
ww
w.
aa
na
1.
10. The intrinsic stand-off ratio of UJT is 0.65. If the interbase resistance is
7.5 KO, determine Rer and Rsz.
PARTB-(5x16=80marks)
11.
(a)
(8)
(i)
(ii)
ft)
(i)
(ii)
(8)
Describethe conductionof current in an intrinsic semiconductor.
Find the conductivity and resistivity of an intrinsic semiconductor
at temperature of 300'K. It is given that
co
m
/ cm3, F, = 3,800cm' / sV ;
ni = 2.5x 1013
F , , = 1 , 8 0 0c m ' l s v , Q = L ' 6 x 1 0 - 1 e C'
aa
na
va
(ii)
(10)
N.
L2.(a)(i)Derivethecontinuityequationforasemiconductor.
(8)
Or
(10)
(ii)
(i)
13. (a)
ww
w.
(b)
(i)
junction
Derive an expression for the diffusion capacitance of a pn
(8)
diode.
(ii)
(b)
(i)
(ii)
(6)
write a note on temperature dependence of breakdown voltages'
R 3283
14.
(a)
(i)
(8)
equation.
(ii)
(8)
base configuration.
Or
(b)
(i)
(ii)
15. (a)
(i)
(ii)
(ii)
( 1 0)
(6)
w.
aa
na
va
N.
co
m
(i)
ww
(b)
R 3283