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75N75
Power MOSFET
75Amps, 75Volts
N-CHANNEL POWER MOSTFET
TO- 251
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
TO-252
TO-220
FEATURES
* RDS(ON) = 12.5m @VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
TO-220F
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
75N75-TA3-T
75N75L-TA3-T
TO-220
75N75-TF3-T
75N75L-TF3-T
TO-220F
75N75-TM3-T
75N75L-TM3-T
TO-251
75N75-TN3-R
75N75L-TN3-R
TO-252
75N75-TN3-T
75N75L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
75N75L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
www.unisonic.com.tw
Copyright 2005 Unisonic Technologies Co., Ltd.
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
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Tape Reel
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QW-R502-097,A
75N75
Power MOSFET
SYMBOL
VDSS
RATINGS
UNIT
75
V
TC = 25
75
A
ID
Continuous Drain Current
TC = 100
56
A
Drain Current Pulsed (Note 1)
IDM
300
A
20
Gate to Source Voltage
VGS
V
Single Pulsed (Note 2)
EAS
900
mJ
Avalanche Energy
300
mJ
Repetitive (Note 1)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
15
V/ns
TC = 25
220
W
Total Power Dissipation
PD
Derating above 25
1.4
W/
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Thermal Resistance Case-Sink
SYMBOL
JA
JC
CS
MIN
TYP
MAX
62.5
0.8
0.5
UNIT
/W
/W
/W
SYMBOL
TEST CONDITIONS
BVDSS
VGS = 0 V, ID = 250 A
ID = 1mA,
BVDSS/TJ
Referenced to 25
VDS = 75 V, VGS = 0 V
IDSS
VDS = 75 V, VGS = 0 V,
TJ = 150
VGS = 20V, VDS = 0 V
IGSS
VGS = -20V, VDS = 0 V
TYP
MAX
75
UNIT
V
0.08
20
250
100
-100
nA
nA
4.0
15
RDS(ON)
VGS = 10 V, ID = 48 A
12.5
CISS
COSS
CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz
3300
530
80
pF
pF
pF
12
79
80
52
90
20
30
ns
ns
ns
ns
nC
nC
nC
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
2.0
V/
VGS(TH)
MIN
140
35
45
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QW-R502-097,A
75N75
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
VSD
IS = 48A, VGS = 0 V
IS = 48A, VGS = 0 V
Reverse Recovery Time
trr
dIF / dt = 100 A/s
Reverse Recovery Charge
Qrr
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.24mH, IAS=48A, RG=20, Starting TJ=25
3. ISD48A, di/dt300A/s, VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width300s,Duty Cycle2%
5. Essentially independent of operating temperature.
MIN
TYP
MAX
75
300
1.4
90
300
UNIT
A
V
ns
C
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QW-R502-097,A
75N75
Power MOSFET
D.U.T.
VDS
+
-
RG
Driver
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
VDD
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS= 10V
di/dt
IRM
Body Diode Reverse Current
VDD
Body Diode
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QW-R502-097,A
75N75
Power MOSFET
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
t D(ON )
Pulse Width 1s
tD (OFF)
tF
tR
Same Type
as D.U.T.
50k
12V
0.2F
QG
10V
0.3F
VDS
QGS
QGD
VGS
DUT
VG
1mA
Charge
L
VDS
BVDSS
RD
10V
VDD
D.U.T.
tp
IAS
tp
Time
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QW-R502-097,A
75N75
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
100
10-1
14
VGS=10V
13
12
11
10 20 30 40 50 60 70 80 90 100
Drain Current, I D (A)
6000
5000
4000
Capacitance Characteristics
(Non-Repetitive)
CISS=CGS+C GD (CDS=shorted)
COSS =CDS+C GD
CRSS=CGD
C ISS
3000
2000
1000
COSS
0
CRSS
*Note:
1. VGS=0V
2. f = 1MHz
100
1 50
4 5
6 7
8 9 10
3
Gate-Source Voltage, VGS (V)
150
10 1
25
*Note:
1. VGS=0V
2. 250s Test
10 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Voltage, VSD (V)
1.6
VDS=38V
VDS=60V
4
2
0
5
10 15 20 25 30 35
Drain-Source Voltage, VDC (V)
25
Note:
1. VDS=25V
2. 20s Pulse Test
15
Capacitance (pF)
10 1
101
10 0
Drain-Source Voltage, VDS (V)
4.5V
101
102
On-State Characteristics
V GS
Top: 15V
10 V
8 V
7 V
102
6 V
5 .5V
5V
Bottorm : 4.5V
*Note: ID=48A
5 10 15 20 25 30 35 40 45
Total Gate Charge, Q G (nC)
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QW-R502-097,A
75N75
Power MOSFET
1.2
1.1
1.0
*Note:
1. VGS=0V
2. ID=250A
0.9
0.8
-100
-50
50
100
150 200
TYPICAL CHARACTERISTICS(Cont.)
Junction Temperature, T J ()
3.0
2.5
2.0
1.5
1.0
0.0
-100 -50
0
50
100 150 200
Junction Temperature, T J ()
60
100s
10
10ms
1ms
DC
1
*Note:
1. T c=25
2. T J=150
3. Single Pulse
0.1
1
10
100
1000
Drain-Source Voltage, VD (V)
70
Operation in This
Area by RDS(ON)
*Note:
1. VGS=10V
2. I D=3.5A
0.5
50
40
30
20
10
0
25
50
75
100
125
150
Case Temperature, T C ()
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
*Note:
1. ZJ C (t) = 0.88/W Max.
2. Duty Factor , D=t1/t2
3. TJ -TC =PDMZJ C (t)
10
1
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t 1 (sec)
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QW-R502-097,A
75N75
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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