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OSCILLATORS
Question Bank
1. Draw & explain construction of UJT. (3)
2. Draw & explain equivalent circuit of UJT. (2)
3. Explain working of UJT with its characteristics. (4)
4. Explain UJT relaxation oscillator. (4)
Uni-junction transistor:
Construction:
Equivalent circuit:
ANALOG ELECTRONICS
ELECTRONICS & COMMUNICATION ENGINEERING DEPARTMENT
UNIT-II
OSCILLATORS
Between bases B1 and B2, the uni-junction behaves like an ordinary resistance. RB1 and
RB2 at the internal resistances respectively from bases B1 and B2 to eta point A.
When a voltage VBB is applied across the two base terminals B1 and B2, the potential of
point A with respect to B1 is given by
V AB1
R B1
V BB VBB
R B1 R B2
Where is called the intrinsic stand-off ratio. Typical values of are 0.51 to 0.82.
Interbase resistance RBB = RB1 + RB2 is of the order of 5-10 k.
Figure: UJT equivalent circuit with VBB and VEE and typical static V-I characteristics
If emitter voltage Ve < VAB1, the E- B1 junction is reverse biased and the reverse emitter
current Ie is negative as shown by curve PS in figure. In this condition UJT is in OFF
state. The resistance between E B1 junction is therefore very high.
At point S, Ve = VEE and Ie = 0, so drop across RE is zero.
When Ve = VBB + VD (at point B) the E B1 junction gets forward biased to allow
forward current flowing through the diode. Here VD is the forward voltage drop across EB1, junction (usually 0.5 V).
Point B is called the peak point. Voltage Vp, and current Ip are called peak-point voltage
and peak-point current respectively.
After this peak point, the emitter injects holes from the heavily doped emitter E into the
lower base region B1. The lower base region B1 is filled up with additional current
carriers (holes). As a result, resistance RB1 of E - B1 junction decreases. The fall in RB1
causes potential of eta point A to drop.
ANALOG ELECTRONICS
ELECTRONICS & COMMUNICATION ENGINEERING DEPARTMENT
UNIT-II
OSCILLATORS
Ie
VEE VD
R B1 R E
When RB1 has dropped to a very small value, indicated by point C, the UJT has reached
ON state. At point C, entire base region B1 is saturated and resistance RB1 cannot
decrease any more. This point C is called the valley point; Vv and Iv are the
corresponding emitter potential and current.
Between points B and C, emitter voltage Ve falls as Ie increases; UJT, therefore, exhibits
negative resistance between these two points.
At the valley point, the current is given by Vv/RB1. Valley-point current, also called
holding current, keeps UJT ON. When emitter current Ie falls below Iv UJT turns OFF.
UJT as a relaxation oscillator:
UNIT-II
OSCILLATORS
Vc Ve V BB 1 e RC
2 is much smaller than 1. When the emitter voltage Ve becomes less than the
valley-point voltage Vv, emitter current Ie falls below Iv and UJT turns OFF.
The time T required for capacitor C to charge from initial voltage Vv to peak-point
voltage Vp, through large resistance R, can be obtained as:
T
1
1
RC ln
f
1
In case T is taken as the time period of output pulse duration (neglecting small discharge
time).
ANALOG ELECTRONICS
ELECTRONICS & COMMUNICATION ENGINEERING DEPARTMENT