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DATA SHEET
M3D124
BGA2003
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Jul 23
2010 Sep 13
NXP Semiconductors
Product specification
BGA2003
FEATURES
PINNING
Low current
PIN
DESCRIPTION
GND
RF in
VS + RF out
handbook, halfpage
RF front end
VS+RFout
BIAS
CIRCUIT
Top view
RFin
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
GND
MAM427
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
4.5
IS
DC supply current
11
mA
MSG
16
dB
NF
noise figure
1.8
dB
2010 Sep 13
NXP Semiconductors
Product specification
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VS
supply voltage
RF input AC coupled
VCTRL
IS
ICTRL
control current
Ptot
Tstg
storage temperature
Tj
MIN.
MAX.
UNIT
4.5
30
mA
mA
135
mW
65
+150
150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
UNIT
350
K/W
CHARACTERISTICS
RF input AC coupled; Tj = 25 C; unless otherwise specified.
SYMBOL
IS
MSG
|s21|2
s12
NF
IP3(in)
PARAMETER
supply current
maximum stable gain
isolation
noise figure
CONDITIONS
TYP.
MAX.
UNIT
4.5
mA
11
15
mA
24
dB
16
dB
18
19
dB
13
14
dB
26
dB
20
dB
1.8
dB
1.8
dB
6.5
dBm
4.8
dBm
Note
1. See application note RNR-T45-99-B-0514.
2010 Sep 13
MIN.
NXP Semiconductors
Product specification
BGA2003
MGS537
200
handbook, halfpage
handbook, halfpage
100 pF
Ptot
(mW)
R1
VS
150
L1
C
RF out
RCTRL
VCTRL
100
BGA2003
50
2
C
0
0
RF in
50
100
150
MGS536
Ts (C)
200
MGS538
MGS539
30
2.5
handbook, halfpage
handbook, halfpage
I CTRL
(mA)
I VS-OUT
(mA)
20
1.5
10
0.5
0
0
0.5
1.5
2
VCTRL (V)
VS-OUT = 2.5 V.
Fig.4
Fig.5
2010 Sep 13
0.5
1.5
2
I CTRL (mA)
2.5
NXP Semiconductors
Product specification
BGA2003
MGS540
30
I VS-OUT
(mA)
25
MGS541
20
handbook, halfpage
handbook, halfpage
(6)
I VS-OUT
(mA)
(5)
15
20
(4)
15
10
(3)
10
5
5
(2)
(1)
0
40
VS-OUT = 2.5 V.
(1) ICTRL = 0.2 mA.
(2) ICTRL = 0.4 mA.
(3) ICTRL = 1.0 mA.
Fig.6
0
0
40
80
120
Tamb (C)
4
VVS-OUT (V)
ICTRL = 1 mA.
Fig.7
MGS542
25
MGS543
30
gain
(dB)
25
handbook, halfpage
handbook, halfpage
fT
(GHz)
20
MSG
Gmax
GUM
20
15
15
10
10
0
0
10
20
30
I VS-OUT (mA)
10
Fig.8
Fig.9
2010 Sep 13
15
20
25
I VS-OUT (mA)
NXP Semiconductors
Product specification
BGA2003
MGS544
25
gain
(dB)
MGS545
40
handbook, halfpage
handbook, halfpage
gain
(dB)
MSG
20
30
Gmax
15
20
G UM
GUM
Gmax
10
10
5
0
102
0
0
10
15
20
25
IVS-OUT (mA)
103
f (MHz)
104
MGS546
3
min
(dB)
2.5
handbook,
NF halfpage
2
(1)
(3)
(2)
(4)
1.5
0.5
0
1
(1)
(2)
(3)
(4)
10
I VS-OUT (mA)
102
f = 2400 MHz.
f = 1800 MHz.
f = 1000 MHz.
f = 900 MHz.
2010 Sep 13
NXP Semiconductors
Product specification
BGA2003
90
unstable region
source
135
1.0
+1
45
+2
+ 0.5
unstable
region load
0.6
(1)
(2)
+ 0.2
180
0.5
0.4
+5
(3)
opt
0.2
0.8
0.2
(4)
0.2
(1)
(2)
(3)
(4)
(5)
(6)
(5)
(6)
G = 23 dB.
G = 22 dB.
G =21 dB.
NF = 1.8 dB.
NF = 2 dB.
NF = 2.2 dB.
135
0.5
45
1
1.0
90
MGS547
90
unstable region
source
135
+1
+ 0.5
(3)
+2
(4)
unstable
region load
1.0
45
0.8
(2)
0.6
(1)
+ 0.2
0.4
+5
0.2
180
f = 1800 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 .
(1)
(2)
(3)
(4)
(5)
(6)
(7)
0.2
0.5
opt
(5)
0.2
(6)
(7)
135
0.5
45
1
1.0
90
MGS548
2010 Sep 13
NXP Semiconductors
Product specification
BGA2003
90
1.0
+1
135
45
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180
0.2
0.5
2
2 GHz
1 GHz
3 GHz
200 MHz
500 MHz
0.2
0.5
135
100 MHz
45
1
1.0
90
MGS549
90
135
45
500 MHz
900 MHz
1 GHz
200 MHz
1.8 GHz
100 MHz
180
20
16
12
3 GHz
135
45
90
MGS550
2010 Sep 13
NXP Semiconductors
Product specification
BGA2003
90
135
45
3 GHz
180
0.5
0.4
0.3
0.2
0.1
100 MHz
135
45
90
MGS551
90
1.0
+1
135
45
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180
0.2
0.5
5
100 MHz
900 MHz
1 GHz
0.2
135
3 GHz
0.5
200 MHz
5
45
1
1.0
90
MGS552
2010 Sep 13
NXP Semiconductors
Product specification
BGA2003
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
SOT343R
HE
v M A
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
2 mm
scale
A1
max
bp
b1
e1
HE
Lp
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
2010 Sep 13
EUROPEAN
PROJECTION
10
NXP Semiconductors
Product specification
BGA2003
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
11
NXP Semiconductors
Product specification
BGA2003
2010 Sep 13
12
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for the marking codes
and the package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R77/05/pp13