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FDS6676AS

30V N-Channel PowerTrench SyncFET


Features

General Description

14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V


RDS(ON) max= 7.25 m @ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching

The FDS6676AS is designed to replace a single SO-8 MOSFET


and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low RDS(ON) and low gate charge. The
FDS6676AS includes an integrated Schottky diode using Fairchilds monolithic SyncFET technology.

High power and current handling capability

Applications
DC/DC converter
Low side notebook

SO-8

Absolute Maximum Ratings TA = 25C unless otherwise noted


Symbol

Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

ID

Drain Current

PD

Power Dissipation for Single Operation

Continuous

Units

30

20

(Note 1a)

14.5

(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

Pulsed

TJ, TSTG

Ratings

50

Operating and Storage Junction Temperature Range

55 to +150

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

RJC

Thermal Resistance, Junction-to-Case

(Note 1a)

50

C/W

(Note 1)

25

C/W

Package Marking and Ordering Information


Device Marking

Device

Reel Size

Tape width

Quantity

FDS6676AS

FDS6676AS

13

12mm

2500 units

FDS6676AS

FDS6676AS_NL (Note 3)

13

12mm

2500 units

2005 Fairchild Semiconductor Corporation

FDS6676AS Rev. A (X)

www.fairchildsemi.com

FDS6676AS 30V N-Channel PowerTrench SyncFET

April 2005

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

DrainSource Breakdown Voltage

VGS = 0 V, ID = 1 mA

BVDSS
TJ

Breakdown Voltage Temperature


Coefficient

ID = 1 mA, Referenced to 25C

30

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

500

IGSS

GateBody Leakage

VGS = 20 V, VDS = 0 V

100

nA

mV/C

28

On Characteristics (Note 2)
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 1 mA

VGS(th)
TJ

Gate Threshold Voltage


Temperature Coefficient

ID = 1 mA, Referenced to 25C

3.3

1.5

RDS(on)

Static DrainSource
OnResistance

VGS = 10 V, ID = 14.5 A
VGS = 4.5 V, ID = 13.2 A
VGS = 10 V, ID = 14.5A, TJ = 125C

4.9
5.9
6.7

ID(on)

OnState Drain Current

VGS = 10 V, VDS = 5 V

gFS

Forward Transconductance

VDS = 10 V, ID = 14.5 A

66

VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

2510

pF

mV/C
6.0
7.25
8.5

50

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

710

pF

270

pF

VGS = 15 mV, f = 1.0 MHz

1.6

VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6

10

20

ns

12

22

ns

Switching Characteristics (Note 2)


td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

43

69

ns

tf

TurnOff Fall Time

29

46

ns

td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)
tf

VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6

17

31

ns

22

35

ns

TurnOff Delay Time

34

54

ns

TurnOff Fall Time

29

46

ns

Qg(TOT)

Total Gate Charge at Vgs=10V

45

63

nC

Qg

Total Gate Charge at Vgs=5V

25

35

nC

Qgs

GateSource Charge

nC

Qgd

GateDrain Charge

nC

VDD = 15 V, ID = 14.5 A,

2
FDS6676AS Rev. A (X)

www.fairchildsemi.com

FDS6676AS 30V N-Channel PowerTrench SyncFET

Electrical Characteristics TA = 25C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

0.4
0.5

0.7

DrainSource Diode Characteristics and Maximum Ratings


VSD

DrainSource Diode Forward Voltage

trr

Diode Reverse Recovery Time

IRM

Diode Reverse Recovery Current

Qrr

Diode Reverse Recovery Charge

VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A

(Note 2)

IF = 14.5A,
diF/dt = 300 A/s

(Note 3)

(Note 2)

27

nS

1.9

26

nC

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50/W when mounted
on a 1 in2 pad of 2 oz
copper

b) 105/W when mounted


on a .04 in2 pad of 2 oz
copper

c) 125/W when mounted


on a minimum pad.
See SyncFET
Schottky body diode
characteristics below

Scale 1 : 1 on letter size paper


2.

Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

3.

FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label.

3
FDS6676AS Rev. A (X)

www.fairchildsemi.com

FDS6676AS 30V N-Channel PowerTrench SyncFET

Electrical Characteristics TA = 25C unless otherwise noted (Continued)

2.4

50
VGS = 10V

RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

3.5V

ID, DRAIN CURRENT (A)

40
6.0V

4.5V

3.0V

30

20

10

2.5V

2.2

VGS = 3.0V

2
1.8
1.6
3.5V
1.4
4.0V
4.5V

1.2

6.0V
10V

1
0.8

0
0

0.25
0.5
0.75
VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

40

50

0.016
ID = 7.3 A

RDS(ON), ON-RESISTANCE (OHM)

I D = 14.5A
VGS =10V
1.2

0.8

0.014

0.012

0.01
TA = 125 C
0.008

0.006
TA = 25C

0.6
-55

0.004
-35

-15

25

45

65

T J, JUNCTION TEMPERATURE (

85
o

105

125

4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

C)

Figure 3. On-Resistance Variation with


Temperature.

10

Figure 4. On-Resistance Variation with


Gate-to-Source Voltage.
100

50

VGS = 0V

IS , REVERSE DRAIN CURRENT (A)

V DS = 5V
40

I D, DRAIN CURRENT (A)

20
30
ID, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with


Drain Current and Gate Voltage.

1.4

RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

10

30
TA = 125 C

-55C

20
25C
10

10

TA = 125C

25C
0.1
-55C
0.01

0.001
1

1.5

2.5

3.5

0.2

0.4

0.6

0.8

V GS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation


with Source Current and Temperature.

4
FDS6676AS Rev. A (X)

www.fairchildsemi.com

FDS6676AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics

3500

10

f = 1MHz
VGS = 0 V

3000

8
VDS = 10V

CAPACITANCE (pF)

VGS , GATE-SOURCE VOLTAGE (V)

I D = 14.5A

20V
6
15V
4

2500
Ciss
2000
1500
Coss
1000

500
Crss
0

0
0

10

20

30

40

50

Q g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

25

30

Figure 8. Capacitance Characteristics.


50

100
100s

P(pk), PEAK TRANSIENT POWER (W)

RDS(ON) LIMIT

ID, DRAIN CURRENT (A)

10
15
20
VDS , DRAIN TO SOURCE VOLTAGE (V)

1ms

10

10ms
100ms
1s
10s

DC

VGS = 10V
SINGLE PULSE
R JA = 125 C/W

0.1

T A = 25C

0.01
0.01

0.1

10

30

20

10

0
0.001

100

SINGLE PULSE
R JA = 125C/W
TA = 25C

40

0.01

0.1

10

100

1000

t1 , TIME (sec)

V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum


Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT


THERMAL RESISTANCE

1
D = 0.5

R JC(t) = r(t) * R JC
R JC = 125 C/W

0.2

0.1

0.1
0.05

P(pk)

0.02

0.01

t1
t2
T J - T C = P * R JC (t)
Duty Cycle, D = t 1 / t2

0.01

SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6676AS Rev A (X)

5
FDS6676AS Rev. A (X)

www.fairchildsemi.com

FDS6676AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics

SyncFET Schottky Body Diode Characteristics

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.

Fairchilds SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6676AS.

0.8A/DIV

I DSS, REVERSE LEAKAGE CURRENT (A)

0.1

TA = 125 C
0.01

TA = 100 C

0.001

0.0001
TA = 25 C
0.00001
0

10

15

20

25

30

VDS , REVERSE VOLTAGE (V)

Figure 14. SyncFET body diode reverse leakage


versus drain-source voltage and temperature.
10nS/DIV

Figure 12. FDS6676AS SyncFET body diode


reverse recovery characteristic.

0.8A/DIV

For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6676).

10nS/DIV

Figure 13. Non-SyncFET (FDS6676) body diode


reverse recovery characteristic.

6
FDS6676AS Rev. A (X)

www.fairchildsemi.com

FDS6676AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics (continued)

VDS

BVDSS
tP

VGS
RGE

VDS

DUT

IAS

VDD
VGS

VDD

0V

IAS

tp

vary tP to obtain
required peak IAS

0.01

tAV

Figure 15. Unclamped Inductive


Load Test Circuit

Figure 16. Unclamped Inductive


Waveforms

Drain Current
Same type as

50k

10V

10 F

1 F

VDD

QG(TOT)

VGS

10V
DUT
QGD

QGS

VGS
Ig(REF)

Charge, (nC)

Figure 17. Gate Charge Test Circuit

Figure 18. Gate Charge Waveform


tON

VDS

RL
VDS

tr

90%

tOFF
td(OFF)
tf

90%

VGS
RGEN

td(ON)

VDD

DUT

10%

0V

10%
90%

VGS
VGS

50%

Pulse Width 1s
Duty Cycle 0.1%

0V

Figure 19. Switching Time


Test Circuit

Figure 19. Switching Time Waveforms

7
FDS6676AS Rev. A (X)

10%

50%

Pulse Width

www.fairchildsemi.com

FDS6676AS 30V N-Channel PowerTrench SyncFET

Typical Characteristics

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15

8
FDS6676AS Rev. A (X)

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FDS6676AS 30V N-Channel PowerTrench SyncFET

TRADEMARKS