Académique Documents
Professionnel Documents
Culture Documents
: ENGINEERING
Level of Study
: UG 1
Time
Date
: 29/05/14
Duration
: 3 Hours
Section(s)
: 1-9
: Electronics
This Question Paper Consists of Eight (8) Printed Pages (Including Cover Page) With
Five (5) Questions.
INSTRUCTION(S) TO CANDIDATES
Electronics
Fig. 1(a)
Calculate the transformer turns ratio of the rectifier circuit as shown in Fig. 1(b)
and determine the peak inverse voltage (PIV) of each diode. Assume that the input
voltage of the transformer is 220 V(rms), 50 Hz from an AC main line source, the
desired peak output voltage of the circuit is 9V and the diode cut-in voltage V =
0.6 V.
(8 marks)
Fig. 1(b)
Electronics
Fig. 2(a1)
Fig. 2(a2)
b) A BJT circuit is shown in Fig. 2(b). Determine the values of IC and VEC. Assume = 100
and VEB(on) = 0.7 V.
(4 marks)
Fig. 2(b)
Electronics
c) Calculate IC and VCE given that = 50 and VBE(on) = 0. 7 V for the circuit as shown in
Fig. 2(c).
(6 marks)
Fig. 2(c)
Q.3 [20 marks]
a) A transistor has current gain, in the range of 90 180 and the collector current, IC
is in the range 0.8 IC 1.2 (mA). What is the possible range in the small signal
parameters gm and r ? Assume that VT = 0.026 V.
(4 marks)
Assume that = 100 and VA = for the common emitter circuit configuration as shown
in Fig. 3(b).
i.
ii.
iii.
Fig. 3(b)
(4 marks)
(2 marks)
(4 marks)
Electronics
c) A common collector circuit is as shown in Fig. 3(c). Assume that VBE(on) = 0.7 V, = 100,
VT = 0.026 V and VA = 80 V.
(6 marks)
i.
Calculate the DC collector current.
ii.
Draw the small signal equivalent circuit together with its AC parameters.
Fig. 3(c)
Q.4 [20 marks]
a) Calculate the current in an NMOSFET. Consider an n-channel enhancement-mode
V TN
MOSFET with the following parameters:
= 0.4 V, W = 50 m, L= 2 m,
n= 650 cm2/V-s and Cox = 0.138 10-6 F/cm. Determine the current when the MOSFET is
v GS = 2.2 V.
b) Give two differences between Bipolar Junction Transistor (BJT) and Metal Oxide
Semiconductor Field Effect Transistor (MOSFET).
(4 marks)
Electronics
c) Draw the small-signal equivalent circuit of the Fig. 4(c) and determine the small-signal
voltage gain, input and output resistance of a common-source amplifier. The circuit
parameters are: VDD = 4.5 V, RD = 4.7 k, R1 = 120 k, R2 = 47 k and RSi = 4 k. The
NMOS transistor parameters are: VTN = 0.4 V, Kn = 0.6 mA/V2 and = 0 V 1
marks)
. (12
Fig. 4(c)
V DS Q
I DQ ,
V GSQ
and
ii. Draw the small-signal equivalent circuit and determine the voltage gain
Av .
Electronics
Fig. 5 (a)
b) Calculate the voltage gain and output voltage VO of the operational amplifier circuit as
shown in Fig. 5(b).
(5 marks)
Fig. 5 (b)
c) The output voltage of the non inverting op-amp circuit as shown in Fig. 5(c) is 9.5V.
Determine the value of resistance R1 of the circuit.
(5 marks)
Electronics
Fig. 5 (c)
vD
VT
1)
For BJT:
I CQ
gm
VT
r
VT
I CQ
ro
VA
I CQ
Electronics
For NMOSFET:
I D K n [2 VGS VTN VDS VDS ]
2
I D K n VGS VTN
ro
1
I DQ
g m 2 K n I DQ
Kn
W n Cox
2L