VLSI Circuit Design

Lecture 1: Introduction to
VLSI Circuits
Dr. Ke Huang
COMPE 572
VLSI Circuit Design
Fall 2015

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COMPE 572 VLSI Circuit Design

Class administration
Course #: COMPE 572
Course name: VLSI Circuit Design
Two lectures per week:
Tuesday, Thursday 5:30PM-6:45PM

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COMPE 572 VLSI Circuit Design

Class administration
Instructor: Dr. Ke Huang
Email: khuang@mail.sdsu.edu
Office: E202B
Office hours: Tuesday 10:00am - 12:00pm
Thursday 10:00 am - 12:00pm

Phone: 619-594-7792

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COMPE 572 VLSI Circuit Design

Email
When emailing me, please format the subject
line as follows:
COMPE572 - <last name> <first name> - <subject>

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COMPE 572 VLSI Circuit Design

Textbooks
Title : CMOS VLSI Design A Circuits and
Systems Perspective
Edition: 4th, Addison Wesley
Authors: Neil H.E. West
David Money Harris

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COMPE 572 VLSI Circuit Design

Textbooks
Title : Microelectronic Circuits
Edition: 7th, Oxford University Press
Authors: Adel S. Sedra
Kenneth C. Smith

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COMPE 572 VLSI Circuit Design

Textbooks
Title : Digital Systems Design using VHDL
Edition: 2nd, Cengage Learning
Authors: Charles H. Roth, Jr.
Lizy Kurian John
Course material available on the Blackboard

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COMPE 572 VLSI Circuit Design

Homework
Homework will be assigned on a weekly basis.
Available on Blackboard every week.
Homework is due at the beginning of class on
the date specified on Blackboard.
Penalty will apply if submitted late.

Homework is essential to the learning process!

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COMPE 572 VLSI Circuit Design

Lab
Four lab project assignments in total
Lab reports due dates specified on Blackboard

There are no scheduled lab times. Perform your

lab work when you wish (subject to lab open
hours)
Project assignments must be completed to pass
the course, in accordance with accreditation
requirements

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Exams
Several quizzes during the semester
One mid-term exam during the semester
One final exam at the end of the semester

Exams are closed book, but you are allowed to

bring one page of notes (letter size) prepared by
your own

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Class grades
Homework and project assignments
30% of grade

Midterm exam and quizzes

30% of grade

Final exam
40% of grade

Class participation bonus

Up to 5% of grade. You will have a bonus when you
come to the board and correctly resolve a problem

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Grading system

COMPE 572 VLSI Circuit Design

Class grades

12

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You are expected to

Attend class and participate
Spend time outside of class learning the
material
Read the text books

Do the homework
Attend the lab and complete all of the lab
projects

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Prerequisites
COMPE271, EE330
You must provide the proof of prerequisites (e.g.
copy of official transcript) by 8/27/2015,
otherwise you will be dropped from the class. If
your prerequisite courses were not taken at
SDSU, you should obtain a proof of course
equivalency from the Office of Advising and
Evaluations at SDSU, showing that the courses
you have taken are equivalent to COMPE271
and EE330.

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Prerequisites
In my file, the following students are enrolled
but have not provided the proof of prerequisites
yet:
M. Alva
J. L. Ashok Kumar
S. Bheemareddy
R. Bommakuri
D. Damani
P. Gupta
A. Ilango
J. Jadhav
P. Kansara
P. Kondlapudi

A.M. Kothari
A. Kulkarni
R. M. Kulkarni
P. Mhasalkar
N. Namala
D. Patel
D. Sanghvi
S. Sanjay
D. Shah
D. Shah
H. Shah

J. Shah
R. Shah
V. Shashidhara
Q. Su
A. Tyagi
M. Vanga

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COMPE 572 VLSI Circuit Design

Questions?

16

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Learning objectives
Introduction of VLSI
Review of bipolar junction transistor (BJT)
Review of metaloxidesemiconductor fieldeffect transistor (MOSFET)

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Introduction of VLSI
Application of Very-Large-Scale Integration (VLSI)
systems

VLSI systems

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Introduction of VLSI
Different levels of abstraction
Memory

ALU

Control

I/O

System design

Logic design

Circuit design

We focus on circuit design in this course

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Introduction of VLSI
Discrete electronic components

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Introduction of VLSI
Circuit design with discrete electronic components

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Introduction of VLSI
First integrated circuit (IC) - Texas Instruments
1958

1 transistor and 4 other devices on 1 chip

Winner of the 2000 Nobel Prize

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Introduction of VLSI
First commercial planar IC Fairchild 1959

1-bit memory device on a chip

4 transistors and 5 resistors small scale integration
technology

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Introduction of VLSI
709 operational amplifier Fairchild 1965

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Introduction of VLSI
First 1,024 bit memory chip Intel 1970

Mostly made of nMOS transistors

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Introduction of VLSI
First microprocessor Intel 1971

The Intel 4004 2,300 Transistors

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Introduction of VLSI
Intel core i7 Bloomfield Intel 2008

1.4 billion transistors

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Introduction of VLSI
Scales of integrated circuits
Small-scale integration Medium-scale integration
(SSI) ~10 components (MSI) ~100 components

Large-scale
integration
(LSI) ~10,000
components

Very large-scale integration (VLSI) has more

than tens of thousands of transistors on a single chip

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Introduction of VLSI
Semiconductor manufacturing

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Introduction of VLSI
Semiconductor manufacturing

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Introduction of VLSI
IC wafers and packaging

After metal deposition, each wafer contains a number of the same

ICs, which will be cut into distinct pieces and put in the package

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Introduction of VLSI
Illustration of IC layout

3-D illustration of an IC

Cross-sectional diagram of
n- and p-MOSFETs

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Introduction of VLSI
What do we do?

Circuit-level
schematic design

Layout design

Hardware description
language

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Learning objectives
Introduction of VLSI
Review of bipolar junction transistor (BJT)
Review of metaloxidesemiconductor fieldeffect transistor (MOSFET)

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Review of bipolar junction transistor (BJT)

Simplified structure of the npn and pnp transistors

npn transistor

pnp transistor

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Review of bipolar junction transistor (BJT)

Characteristic for an npn transistor

characteristic

characteristic

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Learning objectives
Introduction of VLSI
Review of bipolar junction transistor (BJT)
Review of metaloxidesemiconductor fieldeffect transistor (MOSFET)

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Physical structure of NMOS transistors

Physical structure of NMOS

Cross-section of NMOS

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Complementary MOS (CMOS)

Cross-section of a CMOS integrated circuit

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of nMOS
D
G

Overdrive voltage: how much exceeds

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COMPE 572 VLSI Circuit Design

Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of nMOS a 3-dimensional view

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COMPE 572 VLSI Circuit Design

Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of nMOS a 3-dimensional view

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of nMOS
D
G

characteristic

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of nMOS
D
G

or
S

characteristic in saturation region

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of pMOS

S
G
D

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of pMOS

= 2V

G
D

= 3V
= 4V
= 5V

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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Characteristics of pMOS

- (A)

G
D

(V)

characteristic in saturation region

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Summary
Introduction of VLSI
Review of bipolar junction transistor (BJT)
Review of metaloxidesemiconductor fieldeffect transistor (MOSFET)