Circuits & Devices Lab Manual

Circuits and Devices Lab
CIRCUITS AND DEVICES LABORATORY

LABORATORY MANUAL
Prepared By,
Mrs.S.SINDHUJA BANU,
Assistant Professor,
Department of ECE,
Sri Shakthi Institute of Engineering and Technology,
Coimbatore 641062.
Approved By,
Mrs.S.Bhavani,
Head of the Department,
Department of ECE,
Sri Shakthi Institute of Engineering and Technology,
Coimbatore 641062.
Mrs.S.Sindhuja Banu
Assistant Professor, Dept. of ECE
CIRCUIT DIAGRAM
KIRCHOFFS VOLTAGE LAW
KIRCHOFFS CURRENT LAW
Mrs.S.Sindhuja Banu
1. VERIFICATION OF KIRCHOFFS VOLTAGE LAW AND

AIM:
To experimentally verify
a) Kirchoffs Voltage Law ( KVL ) and
b) Kirchoffs Current Law ( KCL )
for the given electrical network.
APPARATUS / COMPONENTS REQUIRED:

S.NO
COMPONENTS
1.
DC Supply
2.
SPECIFICATION QUANTITY
(0-30)V
Resistors
1K
3.
Potentiometer (Linear)
1K
4.
Ammeter
(0-30)mA
5.
Voltmeter
(0-30)V
6.
Breadboard
7.
Connecting wires
1
As required
PRECAUTIONS:
1) To be ensured that all the connections are correct.
2) Errors should be avoided while taking the readings from the Analog meters.
Mrs.S.Sindhuja Banu
OBSERVATION
KIRCHOFFS VOLTAGE LAW
S.NO
Input
voltage
(V)
Voltage (V)
V1
V2
Total Voltage
V (V)
V3
S.NO
Input
voltage
(V)
Mrs.S.Sindhuja Banu
Current (mA)
I1
I2
Total Current I
(mA)

KIRCHOFFS CURRENT LAW (KCL)
The algebraic sum of current flowing through a node is zero. At a junction or node
the sum of current entering a node is equal to sum of current leaving the node.
Mathematically:
When applying KCL, the current directions (entering or leaving a node) are based on
the assumed directions of the currents.
Also need to decide whether currents entering the node are positive or negative;
this dictates the sign of the currents leaving the node.
As long all assumptions are consistent, the final result will reflect the actual current
directions in the circuit.
KIRCHOFFS VOLTAGE LAW (KVL)
The algebraic sum of all voltages around any closed loop is zero.
Equivalently: The sum of the voltage rises around a closed loop is equal to the sum of
the voltage drops around the loop.
Mathematically:
Voltage polarities are based on assumed polarities

If assumptions are consistent, the final results will reflect the actual polarities
voltage drops = voltage rises
REFERENCES:
1. Joseph A. Edminister, Mahmood, Nahri, Electric Circuits Schaum series, TMH
(2001).
2. William H. Hayt, J.V. Jack, E. Kemmerly and Steven M. Durbin, Engineering
Circuit Analysis, TMH, 6th Edition, 2002.
Mrs.S.Sindhuja Banu
PROCEDURE:
KIRCHOFFS VOLTAGE LAW:
1) Connections are given as per the circuit diagram using connecting wires.
2) Switch on the power supply and set the initial voltage to 5V. Increase the input
voltage in steps.
3) Measure the voltage drop across each resistor using voltmeters for each and every
step of input voltage.
4) Tabulate the readings.
5) Verify the result whether the algebraic sum of potential differences around a closed
loop is zero.
KIRCHOFFS CURRENT LAW:

voltage in steps.
3) Measure current through resistors using ammeters for each and every step of input
voltage.
5) Verify the result whether the algebraic sum of currents flowing through a node is
zero.
Mrs.S.Sindhuja Banu

SAMPLE VIVA QUESTIONS
1. What is a bread board?
2. What do you mean by active and passive components? Give example.
3. What is meant by Unilateral and bilateral elements?
4. What is a resistor? Types of resistors.
5. How can you find the value of a given resistor or capacitor (use colour codes)?
6. What is a capacitor?
7. State Ohms Law.
8. State Kirchoffs Current Law
9. State Kirchoffs Voltage Law.
10. Two resistors with equal value R are connected in
(a) series
(b) parallel.
What is the equivalent resistance in each of these?

11. Two capacitors with equal value C are connected in
(a) series
(b) parallel.
What is the equivalent capacitance in each of these?
RESULT:
Thus the Kirchoffs Voltage Law (KVL) and Kirchoffs Current Law (KCL) are
verified experimentally.
Mrs.S.Sindhuja Banu
THEVENINS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Mrs.S.Sindhuja Banu
2. VERIFICATION OF THEVENINS AND NORTONS

THEOREM
AIM:
To experimentally verify
a) Thevenins Theorem and
b) Nortons Theorem
for the given electrical network.

S.NO
COMPONENTS
1.
DC Supply
2.
(0-30)V
Resistors
10K
3.
Ammeter
(0-30)mA
4.
Voltmeter
(0-30)V
5.
Breadboard
6.
Connecting wires
1
As required
PRECAUTIONS:
Mrs.S.Sindhuja Banu
Thevenins equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINS THEOREM
S.No.
Input
voltage
V
Vth
(V)
Rth
()
MODEL CALCULATION
Mrs.S.Sindhuja Banu
10
IL(mA)
Theoretical
= (Vth /Rth + RL )
Practical
Thevenins Theorem
Thevenins theorem states that, A linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth, where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned off.
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source , series resistor and a series load.
This theorem is the one of the most extensively used network theorem. It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations.
REFERENCES:
(2001).
PROCEDURE:
voltage in steps.
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage.
4) Open circuit the current source and short circuit the voltage source to find the
Thevenins Resistance across the load terminal.
5) Draw Thevenins equivalent circuit and measure the load current (IL).
7) Calculate IL and verify with the observed value.
Mrs.S.Sindhuja Banu
11
NORTONS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Mrs.S.Sindhuja Banu
12
THEORY:
Nortons Theorem
Nortons theorem states that, Any two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistor.
Any circuit having
voltage sources and
resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor, where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals.
This theorem is one of the most extensively used network theorem. It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations.
REFERENCES:
(2001).
PROCEDURE:
voltage in steps.
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal.
5) Draw Nortons equivalent circuit and measure the load current (IL).
7) Calculate IL and verify with the observed value.
Mrs.S.Sindhuja Banu
13
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONS THEOREM
S.No.
Input
voltage
V
IN
(mA)
RN
()
MODEL CALCULATION
Mrs.S.Sindhuja Banu
14
IL(mA)
Theoretical
= (RN / RN + RL ) IN
Practical

1. What do you mean by an independent source?
2. What are dependent sources? What are its types?
3. Define mesh .
4. What is mesh analysis?
5. On which law is mesh analysis based?
6. What is the equation for determining the number of independent loops in mesh
current method?
7. State Thevenins theorem.
8. State Nortons theorem.
RESULT:
Thus the Thevenins theorem and Nortons Theorem are verified experimentally.
Mrs.S.Sindhuja Banu
15
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Mrs.S.Sindhuja Banu
16
3. VERIFICATION OF SUPERPOSITION THEOREM
AIM:
To experimentally verify Superposition Theorem for the given electrical network.

S.NO
COMPONENTS
1.
DC Supply
2.
Resistors
3.
Ammeter
4.
Breadboard
5.
Connecting wires
(0-30)V
470
330
(0-10)mA
2
2
1
1
1
As required
PRECAUTIONS:
Mrs.S.Sindhuja Banu
17
Mrs.S.Sindhuja Banu
18
Practical
I (when both
sources are
present)
Theoretical
Practical
Theoretical
Practical
Supply
I2 (when second
I1 (when first
voltage
source is
source is present)
(V)
present)
Theoretical
S.NO
OBSERVATION
SUPERPOSITION THEOREM
Superposition theorem states that In a linear circuit containing several independent sources
sources, the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone.
This theorem applies only to independent sources and not to dependent sources. It applies only to
find voltages and currents. There are two guiding properties of superposition theorem: property of
homogeneity or proportionality and the property of additivity. Limitation of theorem- Power in an
element is not a linear response. Hence it is not possible to apply superposition theorem directly to
determine power associated with an element.
REFERENCES:
1. Joseph A. Edminister, Mahmood, Nahri, Electric Circuits Schaum series, TMH (2001).
2. William H. Hayt, J.V. Jack, E. Kemmerly and Steven M. Durbin, Engineering Circuit
Analysis, TMH, 6th Edition, 2002.
PROCEDURE:
1. Connections are given as per the circuit diagram.
2. Switch on the regulated power supply unit and set the voltage required.
3. Vary the supply voltage and observe the corresponding ammeter readings (I).
4. Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1).
5. Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2).
6. Compare the measured current values with calculated values.
1.
2.
3.
4.
State superposition theorem.

Where can we apply superposition theorem?
What are the guiding properties of superposition theorem?
Limitation of superposition theorem.
RESULT:
Thus the Superposition Theorem is verified experimentally.
Mrs.S.Sindhuja Banu
19
CIRCUIT DIAGRAM:
MODEL GRAPH
Mrs.S.Sindhuja Banu
20
4. VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS
AIM:
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network.

S.NO
COMPONENTS
1.
DC Regulated Power Supply (DC-RPS)
2.
(0-30)V
Resistor
220
3.
Ammeter
(0-10)mA
4.
Voltmeter
(0-10)V
5.
Potentiometer
1K
6.
Breadboard
7.
Connecting wires
1
As required
PRECAUTIONS:
2) Errors should be avoided while taking the readings from the Analog meters
Mrs.S.Sindhuja Banu
21
OBSERVATION
S.NO
Load
RL = VL / IL
Voltage VL (V)
Mrs.S.Sindhuja Banu
22
Current IL (mA)
Power (W)
P = VL x IL
Maximum Power Transfer Theorem

THEORY:
The maximum power transfer theorem states that, to obtain maximum external power
from a source with a finite internal resistance, the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals. The theorem refersto
maximum power transfer, and not maximum efficiency. If the resistance of the load is made
larger than the resistance of the source, then efficiency is higher, since a higher percentage of
the source power is transferred to the load, but the magnitude of the load power is lower
since the total circuit resistance goes up.
If the load resistance is smaller than the source resistance, then most of the power ends
up being dissipated in the source, and although the total power dissipated is higher, due to a
lower total resistance, it turns out that the amount dissipated in the load is reduced.
PROCEDURE:
2. Measure the voltmeter and ammeter readings for different values of RL
3. Calculate the power value PL and plot the graph between RL and PL
4. Verify whether the maximum power is delivered when RL = RS
Mrs.S.Sindhuja Banu
23
CIRCUIT DIAGRAM:
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
S.NO
Input voltage
(V)
Current I1 (A)
Before Interchanging
Theoretical
Mrs.S.Sindhuja Banu
Practical
24
Current I2 (A)
After Interchanging
Theoretical
Practical
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network, then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch.
Forms of the reciprocity theorems are used in many electromagnetic applications, such as
analyzing electrical networks and antenna systems. For example, reciprocity implies that antennas
work equally well as transmitters or receivers, and specifically that an antenna's radiation and
receiving patterns are identical.
REFERENCES:
1. Joseph A. Edminister, Mahmood, Nahri, Electric Circuits Schaum series, TMH (2001).
PROCEDURE:
2. For different supply voltages measure ammeter readings(I1)
3. Interchange voltage and current source.
4. Measure the ammeter readings(I2)
5. Verify whether I1 = I2 and compare with the theoretical values.

1. State maximum power transfer theorem.
2. State the condition for maximum power transfer theorem.
3. Limitation of maximum power transfer theorem
4. What is the efficiency of power transfer when max. transfer of power occurs?
5. State reciprocity theorem.
6. Limitation of reciprocity theorem.
7. Application of reciprocity theorem.
RESULT:
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem
experimentally.
Mrs.S.Sindhuja Banu
25
is verified
CIRCUIT DIAGRAM
FORMULAE:
fr = 1/(2(LC)),
I=V/R,
Upper cut-off frequency, f2 = fr + (R/4L),
Lower cut-off frequency, f1 = fr - (R/4L),
Bandwidth, B = f2 - f1 = R/(2L),
Quality factor, Q = L/R (or) fr/B.
MODEL GRAPH:
Mrs.S.Sindhuja Banu
26
5. FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS
AIM:
a) To study the frequency response of a series resonance circuit.
b) To study the frequency response of a parallel resonance circuit.

S.NO
COMPONENTS
1.
Function Generator
2.
(0-1)MHz
Resistor
1K
3.
Inductor
300mH
4.
Capacitor
100nF
5.
Ammeter
(0-500)mA
6.
Breadboard
7.
Connecting wires
1
As required
PRECAUTIONS:
Mrs.S.Sindhuja Banu
27
OBSERVATION
SERIES RESONANCE
S. No
Frequency f (Hz)
Mrs.S.Sindhuja Banu
28
Current I (mA)
Series Resonant Circuit

THEORY:
Resonance in AC circuits implies a special frequency determined by the values of the
resistance , capacitance , and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase. In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor. The point at which this occurs is called the Resonant
Frequency, ( r ). The sharpness of the peak is measured quantitatively and is called the
Quality factor, Q of the circuit. .Series resonance circuits are one of the most important
circuits used electronics. They can be found in various forms in mains AC filters, and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels.
REFERENCES:
(2001).
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V.
3. The frequency is varied and the change in current is tabulated for different
frequency input.
4. A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency.
Mrs.S.Sindhuja Banu
29
CIRCUIT DIAGRAM:
FORMULAE:
fr = 1/(2(LC)),
I=V/R,
Upper cut-off frequency, f2 = (1/2)[(1/2RC)+((1/2RC)2+1/LC)1/2],
Lower cut-off frequency, f1 = (1/2)[(-1/2RC)+((1/2RC)2+1/LC)1/2],
Bandwidth, B = f2 - f1 = 1/(2RC) = fr/Q,
Quality factor, Q = L/R (or) fr/B.
MODEL GRAPH:
OBSERVATION
S. No
Mrs.S.Sindhuja Banu
30
Frequency f
Current I
(Hz)
(mA)
Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit. Both circuits have a resonant frequency point. The difference this time however, is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit. A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies. Consider the parallel RLC
circuit below. At resonance, the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuit's frequency response by
changing the value of this resistance. Changing the value of R affects the amount of current
that flows through the circuit at resonance, if both L and C remain constant.
REFERENCES:
(2001).

1. What do you mean by resonance circuit? Types of resonance circuits
2. What is series resonance?
3. What is parallel resonance?
4. Define selectivity of resonant circuit.
5. Define bandwidth of a resonant circuit.
6. State the condition for resonance RLC series circuit.
7. What is resonant frequency?
8. Define quality factor.
9. What is tank circuit?
10. What are half power frequencies?
RESULT:
Thus the resonant frequency, bandwidth and quality factor of a series and parallel resonant
circuit is determined.
Mrs.S.Sindhuja Banu
31
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH:
V-I Characteristics of PN Diode
Mrs.S.Sindhuja Banu
32
6. CHARACTERISTICS OF PN AND ZENER DIODE

AIM:
a) To Plot the Forward bias V-I characteristics of a PN junction diode.
b) To plot the Reverse bias V-I characteristics of a Zener diode.

S.NO
COMPONENTS
1.
2.
3.

PN diode
Zener diode
4.
(0-30)V
1N 4007
FZ 6.2
1
1
1
Resistors
1K
5.
Ammeters
(0-50)mA, (0-500)A
1 each
6.
Voltmeter
(0-1)V, (0-10)V
1 each
7.
Breadboard
8.
Connecting wires
1
As required
PRECAUTIONS:
1) While doing the experiment do not exceed the ratings of the diode. This may
lead to damage of the diode.
2) All the connections should be correct.
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
Mrs.S.Sindhuja Banu
33
OBSERVATION:
Forward bias of PN diode
S.No
VF
(V)
Mrs.S.Sindhuja Banu
IF
(mA)
34
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive. When the
diode is forward biased, the diode conducts and allows current to flow through it without any
resistance. When the diode is reverse biased, the diode does not conduct and no current flows
through it, i.e. the diode is OFF, or providing a blocking function. Thus an ideal diode act as
a switch, either open or closed, depending upon the polarity of the voltage placed across it.
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias.
PROCEDURE:
Forward bias
2) For forward bias of PN diode, anode is connected to the positive of power supply and
negative of power supply to cathode of diode.
3) Switch on the power supply and increase the supply voltage in steps.
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage.
5) Tabulate the readings and plot the VI characteristics.
Reverse bias
2) For reverse bias of PN diode, cathode is connected to the positive of power supply
and negative of power supply to anode of diode.
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage.
Mrs.S.Sindhuja Banu
35
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH:
V-I Characteristics of Zener Diode
Mrs.S.Sindhuja Banu
36
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode,
the current through the junction and the power dissipated at the junction will be high. Such
an operation is destructive and the diode gets damaged. Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region. One such diode
is known as Zener Diode. Zener diode is heavily doped than the ordinary diode. It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition. Whereas under reverse biased condition, break down of the junction occurs. The
break down voltage depends upon the amount of doping. If the diode is heavily doped,
depletion layer will be thin and, consequently break down occurs at lower reverse voltage
and further, the break down voltage is sharp. Whereas a lightly doped diode has a higher
break down voltage. Thus break down voltage can be selected with the amount of doping.
REFERENCES:
1. David A. Bell, Electronic Devices and Circuits, Oxford University Press,
5th Edition, (2008).
2. Robert Boylestad, Louis Nashelsky, Electronic devices and Circuit Theory, PHI,
2008.
PROCEDURE:
Forward bias
2) For forward bias of Zener diode, anode is connected to the positive of power supply
and negative of power supply to cathode of diode.
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
Mrs.S.Sindhuja Banu
37
OBSERVATION:
Reverse bias of Zener diode
S.No
Vr
(V)
Mrs.S.Sindhuja Banu
Ir
(A)
38
Reverse bias
2) For reverse bias of Zener diode, cathode is connected to the positive of power supply
and negative of power supply to anode of diode.
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

1. Define Semiconductor.
2. What are the 3 semiconductors mostly used in electronics?
3. Why Si is mostly used as semiconductor material than Ge?
4. Define Doping. What are the element types used for doping?
5. Define PN junction. Draw its VI characteristic.
6. Define Depletion Region.
7. What is barrier potential?
8. What you meant by Bias? Types of bias in diode.
9. Define zener diode. Draw its characteristics curve.
10. What happens when reverse breakdown voltage is reached?
11. Why zener diode used as a voltage regulator?
12. Types of diode breakdown. Explain.
13. Main difference between PN junction and Zener diode.
14. Applications of diodes.
RESULT:
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted.
Mrs.S.Sindhuja Banu
39
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics
Mrs.S.Sindhuja Banu
Output Characteristics
40
5. CHARACTERISTICS OF CE CONFIGURATION
AIM:
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration.

S.NO
COMPONENTS
2.
3.
DC Regulated Power Supply

(DC-RPS)
Transistor
Potentiometer
4.
Ammeter
5.
Voltmeter
6.
Breadboard
7.
Connecting wires
1.
SPECIFICATION
QUANTITY
(0-30)V
BC107
1K
1
2
(0-100)mA, (0-500)A
(0-1)V
(0-30)V
1 each
1 each
1
As required
PRECAUTIONS:
1) While doing the experiment do not exceed the ratings of the transistor. This may
lead to damage of the transistor. All the connections should be correct.
4) Make sure while selecting the emitter, base and collector terminals of transistor.
Mrs.S.Sindhuja Banu
41
OBSERVATION
INPUT CHARACTERISTICS
VCE = 1 V
VCE = 2 V
VCE = 3 V
S.No.
VBE (V)
IB ( A)
VBE (V)
IB ( A)
VBE (V)
IB (A)
OUTPUT CHARACTERISTICS
IB = 50 A
IB =75 A
IB = 100 A
S.No.
VCE (V)
IC(mA)
Mrs.S.Sindhuja Banu
VCE (V)
42
IC(mA)
VCE (V)
IC(mA)
SPECIFICATION:
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation, Ptot = 0.3W
Storage temperature, Tstg = -55 to 175C
Maximum operating junction temperature, Tj = 175C
Maximum collector cut-off current, ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter, base, collector)
semiconductor device and can be operated in three configurations: Common Base(CB),
Common Emitter(CE), Common Collector(CC). BJTs are of two types namely NPN and
PNP. It consists of two P-N junctions namely emitter junction and collector junction. Baseemitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration.
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter. Here emitter is common to both input and
output and hence the name Common Emitter configuration. Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configuration.As the input is between base-emitter in CE configuration ,
the input characteristics resembles a family of forward-biased diode curves.Output
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration. It is also called as collector characteristics.
REFERENCES:
2008.
Mrs.S.Sindhuja Banu
43
PROCEDURE
1. Connect the circuit as per the circuit diagram.
2. To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE.
3. Repeat the above step for VCB = 2V and 3V.
4. Tabulate readings and plot the graph between VEB and IE for constant VCB.
2. To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC.
3. Repeat the above step for IE = 20 mA and 30 mA.
4. Tabulate readings and plot the graph between VCB and IC for constant IE.

1. What is Transistor? Draw characteristics of transistor.
2. Name the configurations of Transistor (BJT).Explain.
3. Which are the regions of operations of transistor? How the transistor can be driven
into these regions?
4. What is the importance of CE amplifier?
5. What is ? Give its value.
6. Relation between and .
7. What is early effect?
8. What is B and C in BC 107?
9. How can you obtain input resistance and output resistance from curves?
10. Why CE is the most commonly used transistor configuration?
RESULT:
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Mrs.S.Sindhuja Banu
44
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Mrs.S.Sindhuja Banu
45
6. CHARACTERISTICS OF CB CONFIGURATION
AIM:
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration.

S.NO
COMPONENTS
1.
2.

Transistor
3.
Resistors
4.
Ammeter
(0-30)V
BC107
470
100
(0-30)mA, (0-500)A
5.
Voltmeter
(0-1)V, (0-30)V
6.
Breadboard
7.
Connecting wires
1
1
1 each
1 each
1 each
1
As required
PRECAUTIONS:
1) While doing the experiment do not exceed the ratings of the transistor. This may
lead to damage of the transistor.
2) All the connections should be correct.
Mrs.S.Sindhuja Banu
46
OBSERVATION:
INPUT CHARACTERISTICS
VCB = 1 V
VCB = 2 V
VCB = 3 V
S.No.
VEB (V)
IE ( mA)
VEB (V)
IE ( A)
VEB (V)
IE (mA)
OUTPUT CHARACTERISTICS
IE = 10mA
IE =20mA
IE = 30mA
S.No.
VCB (V)
IC(mA)
Mrs.S.Sindhuja Banu
VCB (V)
47
IC(mA)
VCB (V)
IC(mA)
SPECIFICATION:
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation, Ptot = 0.3W
Storage temperature, Tstg = -55 to 175C
Maximum operating junction temperature, Tj = 175C
Maximum collector cut-off current, ICBO = 15 nA
THEORY:
Bipolar junction transistor (BJT) is a 3 terminal (emitter, base, collector)
semiconductor device and can be operated in three configurations: Common Base(CB),
Common Emitter(CE), Common Collector(CC). BJTs are of two types namely NPN and
PNP. It consists of two P-N junctions namely emitter junction and collector junction. Baseemitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration.
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector. Here base is common to both input and output and
hence the name common base configuration. Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration. Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration. It is also called as collector
characteristics.
REFERENCES:
2008.
Mrs.S.Sindhuja Banu
48
PROCEDURE:
2. To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE.
3. Repeat the above step for VCB = 2V and 3V.
4. Tabulate readings and plot the graph between VEB and IE for constant VCB.
2. To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC.
3. Repeat the above step for IE = 20 mA and 30 mA.
4. Tabulate readings and plot the graph between VCB and IC for constant IE.

1. Why common collector called as emitter follower?
2. Define . Give its value.
3. Application of CB amplifier.
4. What is amplifier?
5. Define Biasing.
6. What is punch through?
7. Characteristics of CB configuration.
8. Different ways of transistor breakdown.
9. What Si preferred over germanium in the manufacture of semiconductor devices?
RESULT:
Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted.
Mrs.S.Sindhuja Banu
49
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
Cut-off
region
Breakdown
Pinch-off region
region
VGS = 0V
VGS = -1V
IDS
(mA)
VGS = -2V
where
VP = Pinch-off voltage
VBR=Breakdown voltage
VP
Mrs.S.Sindhuja Banu
VDS (vol)
VBR
50
7. CHARACTERISTICS OF JFET AND MOSFET
AIM:
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp), drain saturation current (IDSS) and
transconductance(gm).
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET).

S.NO
1.
2.
3.
4.
5.
6.
7.
COMPONENTS
(DC-RPS)
JFET
Potentiometer
Ammeter
Voltmeter
Breadboard
Connecting wires
SPECIFICATION
QUANTITY
(0-30)V
BFW 10
1K
(0-100)mA
(0-30)V, (0-10)V
1
2
1
1 each
1
As required
PRECAUTIONS:
1) While doing the experiment do not exceed the ratings of the FET. This may
lead to damage of the FET.
3) Errors should be avoided while taking the readings from the Analog meters.Make
sure while selecting the source, drain and gate terminals of transistor.
Mrs.S.Sindhuja Banu
51
ID(mA)
Transfer Characteristics
IDSS
VGS (V)
OBSERVATION
Drain Characteristics
S. No
VGS = 0V
Transfer characteristics
VDS = 5 V
VGS = -1V
S.No
VDS
ID
VDS
ID
(vol) (mA) (vol) (mA)
Mrs.S.Sindhuja Banu
52
VGS
ID
(Volts)
(mA

SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 7.5V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation, PD = 300W
Storage temperature Range, Tstg = -65 to 150C
JFET:
JFET is a three terminal device which can be used as an amplifier or switch. The
terminals are: Source(S), Gate(G) and Drain(D). In FET, the voltage applied between the
gate and source (VGS) controls the drain current ID. So it is a voltage controlled device.
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics. For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS. Initially Vgs is 0V. The current increases with increase in Vds. If a
gate voltage is applied, the depletion region widens and restricts the current flow. The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage. To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage. As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state.
REFERENCES:
2008.
Mrs.S.Sindhuja Banu
53

CIRCUIT DIAGRAM
PIN ASSIGNMENT
Mrs.S.Sindhuja Banu
54

MOSFET:
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (e.g. in digital circuits) or as an amplifier (e.g. in analog
circuits). The three terminals are referred to as the Source, Gate, and Drain terminals. The
MOSFET also has a Body terminal, which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors. Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals. If the gate-tosource voltage VGS is less than the threshold voltage value VT (e.g. ~2 Volts, for the
transistors which you will be using in this lab), no current can flow between the source and
the drain i.e. the transistor is OFF; if VGS > VT, then current can flow between the source
and the drain i.e. the transistor is ON. In the ON state, the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source: IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage, i.e. as long as VGS-VT > VDS. When VDS increases above
VGS-VT, IDS saturates at a constant value (i.e. it no longer increases with increasing VDS.)
REFERENCES:
2008.
PROCEDURE:
Drain Characteristics:
1. Connections are made as per the circuit diagram.
2. To obtain the drain characteristics the gate source voltage is kept at a constant value.
3. The drain source voltage is increased in steps and the corresponding drain current is
noted. The same procedure is repeated for different values of the gate source voltage.
4. A graph is drawn between drain current and drain source voltage for constant gate source
voltage.
Mrs.S.Sindhuja Banu
55
Transfer Characteristics:
1. To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value.
2. The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted.
3. The same procedure is repeated for different values of drain source voltage.
4. The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage.
5. The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage.

1. Why is FET known as a unipolar device?
2. What are the advantages and disadvantages of JFET over BJT?
3. What is a channel?
4. Define drain resistance of FET.
5. Distinguish between JFET and MOSFET.
6. Draw the symbol of JFET and MOSFET.
7. What is MOSFET? What are the two modes of MOSFET? Draw their transfer
characteristics.
8. Define pinch-off voltage.
9. Applications of MOSFET.
RESULT:
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined.
Mrs.S.Sindhuja Banu
56
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Mrs.S.Sindhuja Banu
57
8. CHARACTERISTICS OF UJT AND SCR
AIM:
1. To observe the characteristics of Uni Junction Transistor(UJT).
2. To study the characteristics of Silicon Controlled Rectifier (SCR).

S.N
O
1.
2.
3.
4.
5.
6.
7.
8.
COMPONENTS
DC Regulated Power
Supply (DC-RPS)
UJT
SCR
Potentiometer
Ammeter
Voltmeter
Breadboard
Connecting wires
SPECIFICATION
QUANTITY
(0-30)V
2N2646
BT151
1K
(0-30)mA
(0-30)V, (0-10)V
1
1
2
1
1 each
1
As required
PRECAUTIONS:
1) All the connections should be correct. Errors should be avoided while taking the
readings from the Analog meters.
3) Make sure while selecting the terminals of UJT and SCR.
Mrs.S.Sindhuja Banu
58
OBSERVATION
S.NO.
VBB = 1V
VEB(V)
IE(mA)
Mrs.S.Sindhuja Banu
VBB = 2V
VEB(V)
59
IE(mA)
VBB = 3V
VEB(V)
IE(mA)
SPECIFICATION:
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 3.5V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125C
UJT
THEORY:
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction. The UJT Unijunction Transistor (UJT) has three terminals: an emitter (E) and
two bases (B1 and B2). The UJT is biased with a positive voltage(VBB) between the two
bases. This causes a potential drop along the length of the device. Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off. A small
leakage current flows from B2 to emitter due to minority carriers. If V1 is greater than VBB ,
pn junction is forward biased and the emitter current flows which shows that UJT is ON.
Because the base region is very lightly doped, the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal. This reduction in resistance means that the emitter junction is more
forward biased, and so even more current is injected. Overall, the effect is a negative
resistance at the emitter terminal. This is what makes the UJT useful, especially in simple
oscillator circuits. When the emitter voltage reaches Vp, the current starts to increase and the
emitter voltage starts to decrease. This is represented by negative slope of the characteristics
which is referred to as the negative resistance region, beyond the valley point ,RB1 reaches
minimum value and this region,VEB proportional to IE.
Mrs.S.Sindhuja Banu
60
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
BT151
MODEL GRAPH
IAK(A)
ON state
Reverse Blocking Region
(OFF state)
IH
VAK(V)
Reverse Avalanche Region
Forward Avalanche Region

(OFF state)
Mrs.S.Sindhuja Banu
61
SCR
THEORY:
It is a four layer semiconductor device, alternately P-type and N-Type silicon. It
consists of 3 junctions J1, J2, J3 and has three terminals called anode A, cathode K , and a
gate G. J1 and J3 operate in forward direction and J2 operates in reverse direction. When gate
is open, no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off. When anode voltage is increased J2 tends to
breakdown. When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased. Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode. So
gate current starts flowing which increases anode current. Increase in anode current results in
J2 break down and SCR conducts heavily.
REFERENCES:
2008.
PROCEDURE:
1. Connections are made as per the circuit diagram, with correct polarity provision given
to the circuit from the regulated power supply.
2. By keeping the gate current zero, the anode voltage is varied and corresponding anode
current is noted.
3. By varying the gate current at different level the above step is repeated.
4. When the SCR is fired, then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current).
5. A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis.
Mrs.S.Sindhuja Banu
62
OBSERVATION
UJT
S.NO.
VBB = 1V
VEB(V)
IE(mA)
VBB = 2V
VEB(V)
IE(mA)
SCR
S.No
IG = A
VAK(V)
Mrs.S.Sindhuja Banu
IA(mA)
63
VBB = 3V
VEB(V)
IE(mA)

1. What is SCR? Draw the two transistor model.
2. Define holding curent.
3. Define latching current.
4. Applications of SCR.
5. Why SCR is called so?
6. Why SCR turns ON at lower anode potential when gate current is applied?
7. Electrical equivalent circuit of UJT.
8. Define negative resistance region?
9. Applications of UJT.
10. Define intrinsic stand-off ratio.
11. What is interbase resistance of UJT?
12. How can we use UJT to trigger SCR?
13. What is forward operating region of SCR?
RESULT:
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined.
Mrs.S.Sindhuja Banu
64
CIRCUIT DIAGRAM:
MODEL GRAPH:
OBSERVATION
S.NO Voltage(V) Current(mA)
Mrs.S.Sindhuja Banu
65
9.
CHARACTERISTICS OF DIAC AND TRIAC
AIM:
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics.

S.NO
COMPONENTS
SPECIFICATION
QUANTITY
(0-30)V
Sb32
2.

(DC-RPS)
DIAC
3.
TRIAC
BT136
4.
Resistor
1 K
5.
Ammeter
(0-30)mA, (0-100)mA
1 each
6.
Voltmeter
(0-30)V
7.
Breadboard
8.
Connecting wires
1.
1
As required
PRECAUTIONS:
Mrs.S.Sindhuja Banu
66
DIAC
THEORY:
The DIAC is basically a two terminal device. It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction. The DIAC is extensively
used as a triggering device for the TRIAC circuits. When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage, the device will not conduct.
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer. This current is not sufficient to turnon the device.
The DIAC will exhibit the negative resistance characteristics. When the DIAC is turned on,
the resistance decreases and the current increases to a larger value, which is limited by the
load impedance. The voltage drop across the device during the conduction is above 3V.
PROCEDURE:
2. For Mode1 operation MT1 terminal is made positive with respect to MT2.
3. Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage.
4. For Mode 2 operation MT2 terminal is made positive with respect to MT1.
5. Repeat the step 3.
6. Plot the graph for voltage Vs current.
Mrs.S.Sindhuja Banu
67
CIRCUIT DIAGRAM:
MODE 1
MODE 2
MODEL GRAPH:
Mrs.S.Sindhuja Banu
68
TRIAC
The TRIAC is basically a three terminal device. It behaves as two inverse-parallel
connected SCRs with a single gate terminal. TRIAC can be made to conduct in either
direction. The characteristics of TRIAC is such that when MT2is positive with respect to
MT1, the TRIAC can be triggered on by application of a positive gate voltage. Similarly,
when MT2is negative with respect to MT1, the TRIAC can be triggered on by application of
a negative gate voltage. However, a negative gate voltage can also trigger the TRIAC when
MT2 is positive, and a positive gate voltage can trigger the device when MT2 is negative.
The TRIAC is defined as operating in one of the four quadrants. Normally, it is operated in
either quadrant I or quadrant III.
REFERENCES:
2008.
PROCEDURE:
2. For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied.
3. Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage.
4. For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied.
5. Repeat the step 3.
6. Plot the graph for voltage Vs current.
Mrs.S.Sindhuja Banu
69
OBSERVATION
Mode 1
S.No
Mode 2
TRIAC
TRIAC
Voltage(V) Current(mA)
Mrs.S.Sindhuja Banu
70
TRIAC
Voltage(V)
TRIAC
Current(mA)

1. Define thyristor.
2. What is a DIAC?
3. How the DIAC is driven into cut-off?
4. List the applications of DIAC.
5. What is a TRIAC?
6. Explain the operation of TRIAC.
7. How can you tigger a DIAC?
8. How can you trigger a TRIAC?
9. List the applications of TRIAC.
10. Compare SCR with TRIAC.
RESULT:
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted.
Mrs.S.Sindhuja Banu
71
PHOTODIODE:
CIRCUIT DIAGRAM:
MODEL GRAPH:
OBSERVATION
S.No Distance(cm)
Mrs.S.Sindhuja Banu
72
I(mA)
11.
CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR
AIM:
To determine the characteristics of photodiode and phototransistor and to plot its
characteristics.

S.NO
COMPONENTS
2.

(DC-RPS)
Photodiode
3.
Phototransistor
4.
Resistor
5.
1.
SPECIFICATION
QUANTITY
(0-30)V
1
1
1
1 each
Ammeter
1 K, 68 K
(0-10)mA
6.
Voltmeter
(0-30)V
7.
Breadboard
8.
Connecting wires
1
1
As required
PRECAUTIONS:
Mrs.S.Sindhuja Banu
73
PHOTOTRANSISTOR:
CIRCUI DIAGRAM:
MODEL GRAPH:
OBSERVATION
S.No
Mrs.S.Sindhuja Banu
VCE(V)
74
IC(mA)
Photodiode:
The diodes which are designed to be sensitive to illumination are known as
photodiode. When a pn junction is reverse biased, small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers. Increasing the junction temperature generates more holes-electron pairs, and so the
minority carrier current is increased. The same effect occurs if the junction is illuminated.
Hole-electron pairs are generated by the incident light energy, and minority charge carriers
are swept across the junction to produce a reverse current flow. Increasing the junction
illumination increases the number of charge carriers generated, and thus increases the level of
reverse current.
Phototransistor:
A phototransistor is similar to an ordinary BJT, except that its collector-base
junction is constructed like a photodiode. Instead of a base current, the input to the transistor
is in the form of illumination at the junction. In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination. This results in Ic also being
proportional to the illumination level. For a given mount of illumination on a very small area,
the phototransistor provides a much larger output current than that available from
photodiode.
REFERENCES:
2008.
Mrs.S.Sindhuja Banu
75
PROCEDURE:
2. Maintain a certain distance between the bulb and the device.
3. Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device.
4. A graph is plotted for varying values of distances and current.
5. The above steps are repeated for the phototransistor.

1. What is photodiode? Mention its advantage.
2. What are the applications of photodiode?
3. What is phototransistor?
4. Advantages and disadvantages of phototransistor.
5. List the applications of phototransistor.
6. Define photoresistor.
RESULT:
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn.
Mrs.S.Sindhuja Banu
76

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Circuits and Devices Lab

CIRCUITS AND DEVICES LABORATORY

Circuits and Devices Lab

KIRCHOFFS CURRENT LAW

Circuits and Devices Lab

1. VERIFICATION OF KIRCHOFFS VOLTAGE LAW AND

APPARATUS / COMPONENTS REQUIRED:

Circuits and Devices Lab

KIRCHOFFS CURRENT LAW

Circuits and Devices Lab

KIRCHOFFS VOLTAGE LAW (KVL)

Voltage polarities are based on assumed polarities

Circuits and Devices Lab

KIRCHOFFS CURRENT LAW:

Circuits and Devices Lab

What is the equivalent resistance in each of these?

What is the equivalent capacitance in each of these?

Circuits and Devices Lab

Circuits and Devices Lab

2. VERIFICATION OF THEVENINS AND NORTONS

APPARATUS / COMPONENTS REQUIRED:

Circuits and Devices Lab

Thevenins equivalent circuit (To find IL)

Circuits and Devices Lab

Circuits and Devices Lab

Circuits and Devices Lab

voltage sources and

resistors can be replaced by a single

Circuits and Devices Lab

Norton equivalent circuit(To find IL)

Circuits and Devices Lab

SAMPLE VIVA QUESTIONS

Circuits and Devices Lab

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

3. VERIFICATION OF SUPERPOSITION THEOREM

APPARATUS / COMPONENTS REQUIRED:

Circuits and Devices Lab

Circuits and Devices Lab

SAMPLE VIVA QUESTIONS

State superposition theorem.

Circuits and Devices Lab

Circuits and Devices Lab

4. VERIFICATION OF MAXIMUM POWER TRANSFER AND

APPARATUS / COMPONENTS REQUIRED:

DC Regulated Power Supply (DC-RPS)

Circuits and Devices Lab

Circuits and Devices Lab

Maximum Power Transfer Theorem

Circuits and Devices Lab

Circuits and Devices Lab

SAMPLE VIVA QUESTIONS

Circuits and Devices Lab

Circuits and Devices Lab

5. FREQUENCY RESPONSE OF SERIES AND PARALLEL

APPARATUS / COMPONENTS REQUIRED:

Circuits and Devices Lab

Circuits and Devices Lab

Series Resonant Circuit

Circuits and Devices Lab

Circuits and Devices Lab

Parallel Resonant Circuit

SAMPLE VIVA QUESTIONS

Circuits & Devices Lab Manual

Circuits & Devices Lab Manual