Basic Electronics

EE-204

By Atif M.Khokhar

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  Intro Semiconductors
 Types of Semiconductors
 Formation of Extrinsic Semiconductors (Doping)
 Properties of Extrinsic Semiconductors
 Advantages of Doping
 Current flow in Extrinsic Semiconductors

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
 You will be able to

 Understand the Lack in Electrical properties of

Intrinsic Semiconductors
 Understand the properties of Extrinsic
Semiconductors Material
 Get the information of Impurity Elements
 Get the awareness of Advantages of adding
impurity

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
 semiconductors: materials with conductivity between that of
conductors and insulators; e.g. germanium Ge, silicon Si, GaAs, GaP, InP
some representative resistivities ():
R = L/A, R = resistance, L = length, A = cross section area; resistivity at 20o C

resistivity in  m resistance(in )(L=1m, diam =1mm)

Aluminum 2.8x10-8 3.6x10-2
brass 8x10-8 10.1x10-2
copper 1.7x10-8 2.2x10-2
platinum 10x10-8 12.7x10-2
silver 1.6x10-8 2.1x10-2
carbon 3.5x10-5 44.5
germanium 0.45 5.7x105
silicon  640  6x108
porcelain 1010 - 1012 1016 - 1018
Teflon 1014 1020
blood 1.5 1.9x106
fat 24 3x107
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Germanium

RIPHAH INTERNATIONAL
UNIVERSITY,ISLAMABAD, PAKISTAN 2/6/2008 6
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  Material for which gap between valence band and
conduction band is small (gap width in Si is 1.1 eV, in Ge 0.7
eV).

 At T = 0, there are no electrons in the conduction band, and

the semiconductor does not conduct (lack of free charge
carriers)

 At T > 0, some fraction of electrons have sufficient thermal

kinetic energy to overcome the gap and jump to the
conduction band; fraction rises with temperature;
e.g. At 20o C (293 K), Si has 0.9x1010 conduction electrons
per cubic centimeter; at 50o C (323 K) there are 7.4x1010 .

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
  Electrons moving to conduction band leave “hole”
(covalent bond with missing electron) behind under
influence of applied electric field, neighboring
electrons can jump into the hole, thus creating a new
hole.
 Holes can move under the influence of an applied
electric field, just like electrons both contribute to
conduction.
 In pure Si and Ge, there are equally many holes
(“p-type charge carriers”) as there are conduction
electrons (“n-type charge carriers”)pure
semiconductors also called “intrinsic Semiconductors”.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Silicon Energy Bands
At finite temperatures, the number of electrons which reach the
conduction band and contribute to current can be modeled by the
Fermi function. That current is small compared to that indoped
semiconductors under the same conditions.

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Germanium Energy Bands
At finite temperatures, the number of electrons which reach the conduction
band and contribute to current can be modeled by the Fermi function. That
current is small compared to that in doped semiconductors under the same
conditions.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Doping
•If we purposely include some “impurities” in
the crystal, we can add more electrons.
• This works if the impurity atoms have one
more electron per atom than the host
semiconductor.
• Since we increase # of electrons, Fermi energy
increases
• Intrinsic means no doping.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar 16
  donor (N-type) impurities:
 dopant with 5 valence electrons (e.g. P, As, Sb)
 4 electrons used for covalent bonds with surrounding Si atoms,
one electron “left over”;
 left over electron is only loosely bound only small amount of
energy needed to lift it into conduction band (0.05 eV in Si)
 “n-type semiconductor”, has conduction electrons, no
holes (apart from the few intrinsic holes)

example: doping fraction of 10-8 Sb in Si yields about

5x1016 conduction electrons per cubic centimeter at room
temperature, i.e. gain of 5x106 over intrinsic Si.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
 T= 0 K

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Silicon Doping (Formation of N-type)

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
N-type Semiconductors Current

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
We can do the whole exercise
again for HOLES

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 RIPHAH INTERNATIONAL
UNIVERSITY,ISLAMABAD, PAKISTAN 2/6/2008 23
  Acceptor (p-type) impurities:

 dopant with 3 valence electrons (e.g. B, Al, Ga, In) only 3 of

the 4 covalent bonds filled

 vacancy in the fourth covalent bond  Hole

 “p-type semiconductor”, has mobile holes, very few

mobile electrons (only the intrinsic ones).

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Silicon Doping (Formation of P-type)

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
P-type Semiconductors Current

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Silicon Doping (Summary)

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Silicon Doping (Energy States)

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Advantages of Doping

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 advantages of doped semiconductors:

Can “tune” conductivity by choice of doping

fraction
can choose “majority carrier” (electron or hole)
can vary doping fraction and/or majority
carrier within piece of semiconductor
 can make “p-n junctions” (diodes) and “transistors”
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Why Semiconductors

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