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PD-90727C

POWER MOSFET
THRU-HOLE (TO-254AA)

IRFM460
500V, N-CHANNEL

HEXFET MOSFET TECHNOLOGY


Product Summary
Part Number

RDS(on)

ID

IRFM460

0.27

19A

HEXFET MOSFET technology is the key to International


Rectifiers advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistors totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.

TO-254AA

Features:
n
n
n
n
n
n

Simple Drive Requirements


Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight

Absolute Maximum Ratings


Parameter
ID @ VGS = 10V, TC = 25C
ID @ VGS = 10V, TC = 100C
IDM
PD @ TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG

Continuous Drain Current


Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight

Units
19
12
76
250
2.0
20
1200
19
25
3.5
-55 to 150

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (0.063 in.(1.6mm) from case for 10s)


9.3 (Typical)

For footnotes refer to the last page

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1
07/14/15

IRFM460
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter

Min

BVDSS
Drain-to-Source Breakdown Voltage
BV DSS /T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current

Typ Max Units

Test Conditions

500

VGS = 0V, ID = 1.0mA

0.68

V/C

Reference to 25C, ID = 1.0mA

2.0
13

0.27
0.31
4.0

25
250

IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD

Gate-to-Source Leakage Forward


Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance

6.8

100
-100
190
27
135
35
120
130
98

Ciss
C oss
C rss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

4300
1000
250

V
S
A

nA
nC

ns

nH

pF

VGS = 10V, ID = 12A


VGS = 10V, ID = 19A
VDS = VGS, ID = 250A
VDS = 15V, IDS = 12A
VDS = 400V ,VGS = 0V
VDS = 400V,
VGS = 0V, TJ = 125C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 19A
VDS = 250V
VDD = 250V, ID = 19A,
VGS =10V, RG = 2.35

Measured from drain lead (6mm/


0.25in. from package) to source lead
(6mm/0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz

Source-Drain Diode Ratings and Characteristics


Parameter

Min Typ Max Units

IS
ISM
VSD
t rr
Q RR

Continuous Source Current (Body Diode)


Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

ton

Forward Turn-On Time

19
76
1.8
580
8.1

Test Conditions

A
V
ns
C

Tj = 25C, IS = 19A, VGS = 0V


Tj = 25C, IF = 19A, di/dt 100A/s
VDD 50V

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance
Parameter

Min Typ Max Units

RthJC
RthCS

Junction-to-Case
Case-to-Sink

0.21

0.5

RthJA

Junction-to-Ambient

48

Test Conditions

C/W

Typical socket mount

Note: Corresponding Spice and Saber models are available on Inernational Rectifier Website.
For footnotes refer to the last page

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IRFM460

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance


Vs. Temperature

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IRFM460

13a & b

Fig 6. Typical Gate Charge Vs.


Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.


Drain-to-Source Voltage

ID, Drain-to-Source Current (A)

1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100

100s

10
1ms
10ms

0.1

Tc = 25C
Tj = 150C
Single Pulse
1

DC
10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode


Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRFM460

VDS
VGS
RG

RD

D.U.T.
+

-V DD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit


VDS
90%

Fig 9. Maximum Drain Current Vs.


Case Temperature

10%
VGS
td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFM460

15V

VDS

D.U.T.

RG
20V
10

IAS

DRIVER

+
- VDD

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

I AS
Current Regulator
Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50K

QG

10
12V

.2F
.3F

10 V
QGS

QGD

+
V
- DS

VGS

VG

3mA

Charge

Fig 13a. Basic Gate Charge Waveform

D.U.T.

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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IRFM460
Footnotes:
ISD 19A, di/dt 160A/s,

Repetitive Rating; Pulse width limited by

VDD 500V, TJ 150C

maximum junction temperature.


VDD = 50V, starting TJ = 25C, L= 6.6mH
Peak IL = 19A, VGS = 10V

Pulse width 300 s; Duty Cycle 2%

Case Outline and Dimensions TO-254AA


0.12 [.005]

13.84 [.545]
13.59 [.535]

3.78 [.149]
3.53 [.139]

6.60 [.260]
6.32 [.249]

20.32 [.800]
20.07 [.790]

17.40 [.685]
16.89 [.665]
1

2X

14.48 [.570]
12.95 [.510]

3X

3.81 [.150]

13.84 [.545]
13.59 [.535]

1.27 [.050]
1.02 [.040]

0.84 [.033]
MAX.

1.14 [.045]
0.89 [.035]
0.36 [.014]

3.81 [.150]
B A

NOT ES :

1.
2.
3.
4.

DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.


ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.

PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE

CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/2015

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