MicroandNanoTechnologiesfor

Biomedicine,
EnvironmentandEnergy
Introduc)ontomicroand
nanotechnology
Topdownandbo8omupapproaches
CarloRicciardi
AppliedScienceandTechnologyDep.(DISAT)
carlo.ricciardi@polito.it
011/0907383
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JustamaAerofscale?
Microtechnology
Technologywithfeaturesnearonemicrometre

Microelectronics
Studyofmicrometrescaleor
smallerelectroniccomponents.

Nanotechnology
Technologieswithfeaturesatleast
onedimensionsizedfrom1to100
nanometres

Microelectronics:thestorysofar

Microelectronics:thestorysofar

Moores First Law: the number of

transistorsonintegratedcircuitsdoubles
every18months.

Moores Second Law: the cost of

building chip fabrica:on plants will
con:nue to increase (and the return on
investmenttodecrease)un:litbecomes
5
scallyuntenabletobuildnewplants

Microelectronicsiseverywhere

Microelectronics:atopdowntechnology

CMOS(complementarymetaloxidesemiconductor)structure
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Microelectronics:atopdowntechnology
Many microelectronic process steps involve the deposition and subsequent
patterning of a thin film. There is a wide variety of methods for performing such
depositions, which are generally referred to as additive processes.

Physical Vapor Deposition

Chemical Vapor Deposition

Spin Casting
Electrodeposition
Sol-Gel Deposition

Microelectronics:atopdowntechnology
Pattern Transfer
Integrated circuits and microfabricated devices are formed by defining patterns in
the various layers created by wafer-level process steps.
Pattern transfer consists of two parts: a photo-process, whereby the desired
pattern is photographically transferred from an optical plate to a photosensitive film
coating the wafer, and a chemical or physical process of either removing or adding
materials to create the pattern.

Most processes are subtractive, removing material

by etching unwanted material away chemically. A
few processes are additive, such as doping or
plating. Another additive process is called lift-off.

Microelectronics:atopdowntechnology

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Microelectronics:atopdowntechnology

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Simplestmicroeletronicunit:diode

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Microtechnology*
Wetetching

Isotropicetch

Maskcanbeundercut

Freestandingstructures

*Micromachining

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MicroElectroMechanicalSystem(MEMS)areeverywhere

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Anexample:layouteditofapressuresensor

Bulkbacksideetch(membrane)

Diffusion(piezoresistors)

Interconnectionsandcontacts

Padcuts

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Masksandalignmentmarks
1

2
1

3
2

5
4

Add:

1.Alignmentmarks
2.Sequencecontrol
3.Scribelines

Mask1,2,3,4,5

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Anexample:Pressuresensorprocess(1)
n+epi

1.

psub(100)

2.

p+

p+

3.
4.

MaterialselecOon,resisOvity
measure,visualinspecOon(VI)
Cristallographicalignment!
Etchstop(diusionorepiwafer)
etch(wet,DRIE)isotropic
anisotropicverOcalwallandmask
ICandpiezoresistorcompaObility!
ElectriccircuitinsulaOon!
Nitride,bulkmicromachining
Membranethicknesstolerance!
MASK1(DIFF)FSmaskaligner!
Cleansurface,Ox,PR,expose,
develop,BOEetch,implant/diuse

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AnExample:Pressuresensorprocess(2)
Siliconoxide

Contactvias

Metal

PR

5. MASK2(CONTACT)
PECVDOxide

spinPR,expose,develop

BOEetch,PRstrip

6. MASK3(METAL)
Cleansurface,Ox,PR,expose,
develop,metaldeposiOon

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Anexample:Pressuresensorprocess(3)

Cutforwirebonding
(bondingpad)

7. Li`o(stripPRandmetal)

8. PassivaOon
PSGdeposiOon(CVD)

9. MASK4(GLASS)
PR,expose,develop,etch
10. MASK5(BULK)

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Anexample:Pressuresensorprocess(4)

sawblade

11. Preparepyrexglass
(relaOvepressuresensorsdrilled
holes)
MASK(HOLES)

12. Waferbonding
fritglass
waferalignment!
13. EWSelectricalwafersort(remove)
tesOng,triming(waferprober)
14. Protectmembrane(andholes)
15. Dice(saw)

16. Dieadach(pickandplaceon
leadframe)
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Anexample:Pressuresensorprocess(5)

17. Wirebond

18. Capseal

19. Barandleadframecut
pinreshape

20. Finaltest

21. Mark(device,lot,
producOonweek)

22. Packforshipment
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Anexample:Pressuresensorprocess(6)

OverallMEMScosts(typical)100%:
1. 35%siliconIC+micromachining
2. 45%Packaging
3. 20%TesOng&CalibraOon

Frontend
Backend

Packaging
TesOngandsorOng/selecOon
CalibraOon,trimming/programming
(quanOtaOvesensors/actuators)
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What
about
Nanotechnology?
Technologiesformphysics,chemistryandengineeringforsynthesisanduseof
materials,processesanddevicesatatomicormolecularscale

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Nanotechareeverywhere

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Nanotechareeverywhere

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Newfamiliesof(nano)materials:
NANOWIRE
Nanowire:Anysolidmaterialintheformofwire
withdiametersmallerthanabout100nm

SiliconNanowireDiameter<1nm
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Newfamiliesof(nano)materials:
NANOTUBE

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Newfamiliesof(nano)materials:
NANOPARTICLE(NANODOT)
NanoparOcle:AparOclehavingoneormoredimensions
oftheorderof100nmorless

Nanodot
TEM(a,b,andc)imagesofprepared
mesoporoussilicananoparOcleswithmean
outerdiameter:(a)20nm,(b)45nm,and(c)
80nm.SEM(d)imagecorrespondingto(b).
TheinsetsareahighmagnicaOonof
mesoporoussilicaparOcle.

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CurrentTopdownTechnology
193nmArFexcimerlaser
photolithographystepper

Useof193excimer
laserwithphaseshi`
maskstoforfeatures
65nminsize.
Phaseshi`masksand
complexopOcsare
usedtoachievethis
resoluOon.

hdp://www.lrsm.upenn.edu/~frenchrh/lithography.htm

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ProblemswiththeTopdown
Process
Costofnewmachinesand
cleanroomenvironments
growsexponenOallywith
newertechnologies.
Physicallimitsof
photolithographyare
becomingaproblem.
Withsmallergeometries
andconvenOonal
materials,heatdissipaOon
isaproblem.
hdp://www.cit.gu.edu.au/~s55086/qucomp/gifs/intro.moore1.gif
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BodomUpApproach

hdp://idol.union.edu/~malekis/ESC24/KoskywebModules/sa_topd.htm

Theoppositeofthe
topdownapproach.
Insteadoftaking
materialawayto
makestructures,the
bodomupapproach
selecOvelyaddsatoms
tocreatestructures.

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TheIdeasBehindtheBodomup
Approach
Natureusesthe
bodomupapproach.
Cells
Crystals
Humans

Chemistryandbiology
canhelptoassemble
andcontrolgrowth.

hdp://www.csacs.mcgill.ca/selfassembly.htm

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TopdownVersusBodomup
TopDownProcess

BodomUpProcess
Startwithbulkwafer
Applylayerof
photoresist
Exposewaferwith
UVlightthrough
maskandetchwafer

Etchedwaferwith
desiredpadern

Startwithbulkwafer
Alterareaofwafer
wherestructureistobe
createdbyadding
polymerorseed
crystalsorother
techniques.
Groworassemble
thestructureonthe
areadeterminedby
theseedcrystalsor
polymer.(self
assembly)

Similarresultscanbeobtainedthroughbodomupandtopdownprocesses

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WhyisBodomUpProcessing
Needed?
Allowssmallergeometriesthanphotolithography.
CertainstructuressuchasCarbonNanotubesandSi
nanowiresaregrownthroughabodomupprocess.
Newtechnologiessuchasorganicsemiconductors
employbodomupprocessestopadernthem.
CanmakeformaOonoflmsandstructuresmuch
easier.
Ismoreeconomicalthantopdowninthatitdoes
notwastematerialtoetching.

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SelfAssembly
Theprinciplebehindbodomupprocessing.
SelfassemblyisthecoordinatedacOonof
independentenOOestoproducelarger,
orderedstructuresorachieveadesiredshape.
Foundinnature.
Startontheatomicscale.

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ApplicaOonsofBodomUp
Processing
SelforganizingdeposiOon
ofsiliconnanodots.
FormaOonofNanowires.
Nanotubetransistor.
Selfassembled
monolayers.
Carbonnanotube
interconnects.

hdp://web.ics.purdue.edu/~mmaschma/
bias_image_gallery1.htm
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SelforganizingDeposiOonofSilicon
Nanodots.
Mostcommon
applicaOonsarein
opOcaldevicesand
memory.
Siliconnanodotsare
depositedontosilicon
dioxidewithnoneed
forlithographic
paderning.
hdp://www.iht.rwthaachen.de/en/Forschung/nano/bodomup/deposiOon.php

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NovelDevelopmentsinNanolithography:
A. DipPenNanolithography(DPN)

DPN was developed by Chad Mirkin and co

workers1todelivercollecOonsofmoleculestoa
substrateusinganatomicforcemicroscopeOp.

Molecules are deposited via ink chemisorpOon

witharesoluOonoftensofnanometers.

Fig. 1. Schematic representation of DPN

ApplicaOonsforDPNinclude:
funcOonalizaOonofnanoscaledevices
paderningproteinandDNAontosurfaces
f a b r i c a O n g c o n d u c O n g p o l y m e r
nanostructures

1.

R.D. Piner, J. Zhu, F. Zu, S. Hong, C.A. Mirkin, Nature 1999, 283, 661.

Fig. 2. AFM of
polypyrrole on a cleaned surface

NovelDevelopmentsinNanolithography:
B.Mul]layerNanosphereLithography

NanospherelithographywasdevelopedbyRichard
VanDuyneandcoworkers1toallowforinexpensive,
massivelyparallelnanostructurefabricaOonthatis
exibleinnanoparOclesize,shape,andspacing.

UsingmulOlayersofnanospheres,itispossibleto
designasymmetricnanoparOclesofvariousnanoscale
sizesandgeometries.2

Anovel,robustglucosesensorhasbeen
developedrelyingonsurface
enhancedRamanscadering(SERS)
fromtheasymmetricnanoparOcles
obtainedbythismethod.3

Fig. 3. AFM image if a period

nanoparticle array of silver resulting
from multilayer nanosphere
lithography. Nanoparticles are
triangular and less than 125 nm in
dimension.

1. Hulteen, Van Duyne, J. Vac. Sci. Technol.A 1995, 13, 1153.

2. Haynes, Van Duyne, J. Phys. Chem. B 2001, 105, 5599.
3. Shafer-Peltier, Haynes, Clucksberg, Van Duyne, J. Am. Chem.
Soc. 2003, 125, 588.

Fig. 4. left: Glucose molecules interacting with nanoparticles.

right: SERS Spectrum of: A) Decanethiol, B) Decanethiol +
Glucose, C) Spectrum B Spectrum A, D) Crystalline Glucose

FutureofTopdownandBodomUp
Processing

hdp://www.imec.be/wwwinter/business/nanotechnology.pdf

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Whatsnew
in
Nanotechnology?

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