Dioso PDF

Celso Jos Faria de Arajo, M.Sc.
Diodes
Electronics Celso Jos Faria de Arajo, M.Sc.
The ideal diode: (a) diode circuit symbol; (b) i-v characteristic; (c) equivalent circuit in the reverse direction; (d) equivalent circuit in
the forward direction.
Diodes
(a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when (d) Equivalent circuit when v1 0 (e) Output waveform.
Diodes
Examples (Ideal Diode)
BATTERY-LOAD CIRCUIT
(vS sinusoidal) The current iD flew to battery
through diode at 20% of input signal period
whose mean value is 100mA. (a)Vpp =
? (b) R=?
(c) ID(Peak) = ?
DIODE LOGIC GATES
Diodes
Simplified physical structure of the junction diode.
Diodes
(a) The pn junction with no applied voltage (open-circuited terminals). (b) The potential distribution along an axis perpendicular to the
junction.
(b)
Diodes
(a) The pn junction excited by a constant-current source I in the reverse direction. To avoid breakdown, I is kept smaller than Is.
Note that the depletion layer widens and the barrier voltage increases by Vr volts, which appears between the terminals as a reverse
voltage.
(b) The pn junction excited by a constant-current source supplying a current I in the forward direction. The depletion layer narrows
and the barrier voltage decreases by V volts, which appears as an external voltage in the forward direction.
(a)
Diodes
The diode i-v relationship with some scales expanded and others compressed in order to reveal details.
for vD 0.5V
iD
iD
vD = nVT ln = 2.3nVT log
IS
IS
Diodes
k = Boltzmanns constant = 1.38x10 23Joules/Kelvin

T = the absolute temperature in Kelvin
q = the magnitude of electronic charge = 1.60x10 19 Coulomb
VT(20 o)=25.2mV@ 25mV
1 n 2 n=1 standard integrated-circuit and n=2 discrete twoterminal components.
VT = Thermal Voltage VT = kT
q
iD @ I s e
vD
nVT
nVvD
iD = I s e - 1
IS = Saturation Current
IS is a constant for a given diode at a
given temperature. Its also called Scale
Current due to fact that IS is directly
proportional to the cross-sectional area
of de diode. IS is of the order of 10 15 A.
The Forward-Bias Region
-5
-0.1
10
15
20
25
30
35
-2
-0.2
-1
10
11
12
IS
-0.15
0.1
0.3
0.4
0.5
Diode Voltage (V)
0.6
0.05
0.7
0.1
0.8
vD
nV
T
iD = I s e - 1
-0.5
0.5 0.525 0.55 0.575 0.6 0.625 0.65 0.675 0.7 0.725 0.75
Diode Voltage (V)
0.5
1.5
2.5
3.5
4.5
Graph of i-v characteristic of a p-n junction diode

IS=1x10-15A, n=1 and VT=25mV
-0.1
-0.05
0
Diode Voltage (V)
0.2
Diodes
Diode Current (x1015A)
Diode Current (mA)
40
Diode Current (mA)
10
10
10
10
10
10
10
10
10
10
10
10
10
0.46
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0.52
0.58
0.64
0.7
0.76
0.82
0.94
vD = 2.3 nVT log
i2
vD = nVT ln
IS
i2
IS
i
Dv = v2 - v1 = 2.3 nVT log 2
i1
i2
Dv = v2 - v1 = nVT ln
i1
2.3 nVT V =25mV; n=2 = 0.115@ 120mV
2.3 nVT V =25mV; n=1 = 0.0575@ 60 mV
Diode i-v characteristic on semilog scale
0.88
120mV/Decade of Current
n=2
60mV/Decade of Current
n=1
Diode Voltage (V) I S = 1x10-15A V T = 25mV
Diodes
Diode Current (A)
nVT
IS = iDe
v
-D
nVT
)
= 6.9x10-16A
-0.2
0.5
0.2
0.4
0.6
0.8
0.55
0.85
0.9
-0.2
-0.15
-13
x 10
Diode 2
0.15
Diode 1
-0.1
-0.05
0
0.05
0.1
Diode Voltage (V) n = 1 VT = 25mV
Example: Area x Scale Current
0.6
0.65
0.7
0.75
0.8
Diode Voltage (V) n = 1 V T = 25mV
-6
-4
-2
10
12
= 6.9x10-13A
n = 1 Diode 2 (0.7 -1A) IS 2 = 1e
IS 2
= 1000 Area( Diode 2 ) = 1000 x Area( Diode 1 )
IS1
- 0.7
25m
0.7
-3 - 25m
Diode 1 (0.7 - 1mA) IS1 = 10 e
iD = IS e
Diodes
Diode Current (A)
vD
Diode Current (A)
0.2
-3
0.692
0.694
0.696
T=20
0.698
0.7
0.702
Diode Volta ge (V)
T=21
0.706
0.708
Temperature Effect
0.704
Diode (0.7V -- 1mA; n = 1 and T=20 )
General Diode V = - 2mVo
x 10
0.6
0.69
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.5
1.6
Forward Bias Region
Diodes
Diode Current (A)
0.71
Reverse Bias Region

IS doubles for every 10oC in
temperature.
Diodes
4. The diode in the circuit of figure below is a large, high-current device whose reverse
leakage is reasonably independent of voltage. If V=1V at 20oC, find the value of V at
40oC and at 0oC. Ans. 4V; 0.25V
3. Using the fact that a silicon diode has IS=10-14A at 25oC and that IS increases by 15%
per oC rise in temperature, find the value of IS at 125oC. Ans. 1.17x10-8A
2. A silicon junction diode with n=1 has v=0.7V at i=1mA. Find the voltage drop at
i=0.1mA and i=10mA. Ans. 0.64V; 0.76V
1. Consider a silicon with n=1.5. Find the change in voltage if current changes from
0.1mA to 10mA. Ans. 172.5mV
Exercises (1)
Diodes
3. A junction Diode is operated in a circuit in which it is supplied with a constant current

I. What is the effect on the forward voltage of the diode if an identical diode is
connected in parallel? Assume n= 1.
2. In the circuit shown below, both diodes have n = 1 , but D1 has ten times the junction
area of D2. What value of V results for ID1 of 1mA? To obtain a value for V of 50mV,
what current ID1 is needed?
1. For the circuit shown below, both diodes are identical, conducting 10mA at 0,7V and
100mA at 0,8V. Find the value of R, for which V = 50mV.
Exercises (2)
Diodes
Graphical Analysis
I
v2 = 0.7 + 0.1 log D
1m
5 - 0.7
4.3m
= 4.3 mA VD' = 0.7 + 0.1 log
= 0.763V
1k
1m
Diodes
I D'' =
5 - 0.763
4.237m
= 4.237mA VD'' = 0.7+ 0.1 log
= 0.7627V
1k
1m
5 - 0.7627
4.2373m
I D''' =
= 4.2373mA VD''' = 0.7+ 0.1 log
= 0.7627V
1k
1m
VD = 0.7627V \ I D = 4.2373mA
I D' =
To begin the iteration, we assume that VD=0.7V
Recurrent Equation:
Determine the current ID and the diode voltage VD for the circuit below with VDD=5V and
R=1kW. Assume that the diode has a current of 1mA at a voltage of 0.7V and that its
voltage drop changes by 0.1V for every decade change in current.
Iterative Analysis
Diodes
Piecewise-linear Model of the diode forward characteristic and its

equivalent circuit representation.
Diodes
ID =
5 - 0.65
= 4.26mA
1k + 20
VD = VDO + I DrD = 0.65+ 4.26m 20 = 0.735V
VDO = 0.65V
rD=20W
R=1kW, utilizing the piecewise-linear model whose parameters are given in figure below.
Example of Piecewise-linear model of the diode forward characteristic.
Diodes
5 - 0.7
ID =
= 4.3mA
1k
R=1kW, utilizing the constant-voltage-drop model (VDO= 0.7V).
The constant-voltage-drop model of the diode forward characteristic and its equivalent
circuit representation.
Diodes
3. Design the circuit in figure below to provide an output voltage of 2.4V. Assume that
the diodes available have 0.7V drop at 1mA and that DV=0.1V/decade change in
current. Ans. 760 W.
2. Consider a diode that is 100 times as large (in junction area) as a diode whose
characteristics are VDO=0.65V and rD=20W how would the model parameters VDO and
rD change? Ans. VDO does not change; rD decreases by a factor of 100 to 0.2V.
1. For the circuits in Fig. below find ID and VD for the case VDD=5V and R=10KW.
Assume that the diode has a voltage of 0.7V at 1mA current that voltage changes by
0.1V/decade of current change. Use (a) iteration (b) the piecewise-linear model with
rD=20W and (c) the constant-voltage-drop model with VD=0.7V. Ans. (a) 0.434mA,
0.63V; (b) 0.431mA, 0.689V; (c) 0.43mA, 0.7V.
Exercises (3)
nVT
vd < nVT
vd
nVT
Diodes
nVT
rd =
ID
nVT
Equivalent circuit model

for the diode for small
changes around bias
point Q. The incremental
resistance rd is the
inverse of the slope of
the tangent at Q, and VD0
is the intercept of the
tangent on the vD axis.
vd
= ID e
v
1+ d
nVT
nVT
nVT
vd vd
=
id = I D
nVT rd
vd
iD = IS e
VD
iD = IS e
(VD +vd )
iD = I D + id \vD = VD + vd
i
rd = 1 D
vD iD =ID
rd is a small-signal resistance or incremental resistance
Development of the diode small-signal model.

Note that the numerical values shown are for a diode with n = 2.
(c)
(d)
(b)
Diodes
The analysis of the circuit in (a), which contains both dc and signal quantities, can be performed by replacing the diode with the model
of Fig. (a), as shown in (b). This allows separating the dc analysis [the circuit in (c)] from the signal analysis [the circuit in (d)].
(a)
rd
53.8
=2
= 10.7mVpp
53.8+ 10k
rd + R
Diodes
model is justified.
vd (peak) = 5.35mVp , since vd << nVT the small- signal
vd (peak- to - peak) = 2
AC analysis
10- 0.7
ID =
= 0.93mA
10K
nV 2 25m
= 53.8
rd = T =
ID
0.93m
DC analysis (we assume VD @ 0.7 V)
Consider the circuit shown in fig. below for the case R=10KW. The power supply V+
has a DC value of 10V on which is superimposed a 60Hz sinusoid of 1V peak
amplitude (power supply ripple). Calculate both the DC voltage of the diode and the
amplitude of the sine-wave signal appearing across it. Assume the diode to have a
0.7V drop at 1mA current and n=2.
Example of using small-signal model (1)
= 7.9mA
Diodes
the small- signal model is justified.
since vd = 6.2mVp << nVT
AC analysis
r
18.9
vo = 2
=2
= 37.1mV pp
r + R 18.9+ 1k
vo = 18.5mV p or 0.9%
r = 3rd = 18.9
1K
nV 2 25m
rd = T =
= 6.3
ID
7.9m
ID =
1k //18.9
1k//1k
vO =
10+
1.95 = 2.061V
1k //18.9 +1k
1k//1k+ 18.9
DvO = vo = 2.061- 2.1 = -39mV
Consider the circuit shown in fig. below. A string of three diodes is used to provide a constant
voltage of about 2.1V. We want to calculate the percentage change in this regulated voltage
caused by (a) 10% change in the power-supply voltage and
(b) connection of a 1KW load resistance. Assume n = 2.
(b) For all three diodes the small-signal model we
(a) DC analysis
can use the parameters VDO=1.95V and rd= 18.9W
10 - 2.1
obtained from (a) analysis.
Example of using small-signal model (2)
Diodes
1. Find the value of the diode small-signal resistance at bias current of 0.1, 1, and 10mA.
Assume n=1. Ans. 250W; 25W; 2.5W.
2. For a diode that conducts 1mA at a forward voltage drop of 0.7V and whose n=1, find
the equation of the straight-line tangent at ID=1mA. Ans. iD = (1/25)(vD-0.675).
3. Consider a diode with n=2 biased at 1mA. Find the change in current as a result of
changing the voltage by (a) 20mV; (b) 10mV; (c) -5mV (d) +5mV (e)+10mV;
(f) +20mV. In each case, do the calculations (i) using the small-signal model and
(ii) using the exponential model. Ans. (a) 0.40, -0.33mA; (b) 0.20, -0.18mA;
(c) 0.10, -0.10mA; (d) +0.10, +0.11mA; (e) +0.20, +0.22mA; (f) +0.40, +0.49mA.
4. Design the circuit of fig. below so that VO=3V when IL = 0, and VO changes by 40mV
per 1mA of load current. Find the value of R and the junction area of each diode
(assume all four diodes are identical) relative to a diode with 0.7V drop at 1mA
current. Assume n=1. Ans. R= 4.8kW; 0.34.
Exercises (4)
The diode i-v characteristic with the breakdown region shown in some detail.
Diodes
Circuit symbol for a zener diode.
Model for the zener diode.
Operation in the Reverse Breakdown Region-Zener Diodes.
I Zmin + I Lmax
Diodes
R=
VSmin -VZO - rz IZmin
Load Regulation = -(rz //R)
rz
rz + R
R
r
VZO + z VS -(rz //R)IL
R + rz
rz + R
Line Regulation =
VO =
DVO
\ un = mV/mA
DI L
Load regulation
\ un = mV/V
DVO
DVS
Line regulation
Design of the Shunt Regulator
rz
V+ = 38.5mA
rz + R
Diodes
VO = 6.76V (c) VO = -68mV
r // R
R // RL
VO = z L 10+
6.7
rz // RL + R
R // RL + rz
(b) VO =
(a)VO = 6.83V
rz
R
VO =
10+
6.7
rz + R
R + rz
VZO = 6.8- 20 5m = 6.7V
VZO+I ZKrz
+ -(V +I r )
Vmin
ZO ZK z
-I ZK
0.5k
10 = 5V
0.5k+ 0.5k
(e) RL = 1526 W
RL =
(d) VO =
The 6.8V zener diode in the circuit of fig. below is specified to have VZ = 6.8V at IZ = 5mA,
rz = 20W, and IZK= 0.2mA. The supply voltage V+ is nominally 10V but can vary by 1V. (a) Find
VO with no load and with V+ at its nominal value. (b) Find the change in VO resulting from the
1V change in V+. (c) Find the change in VO resulting from connecting a load resistance
RL = 2kW. (d) Find the value of VO when RL = 0.5kW. (e) What is the minimum value of RL for
which the diode still operates in the breakdown region?
Zener Diode - Example
Diodes
Block Diagram of a DC Power Supply.
V
t = ( - 2 ) where = to = sen -1 DO
VS
vomax = VS - VDO
PIV = VS
Diodes
(a) Half-wave rectifier. (b) Equivalent circuit of the half-wave rectifier with the diode replaced with its battery-plus-resistance model.
(c) transfer characteristic of the rectifier circuit. (d) Input and output waveforms, assuming that rD << R.
iDmax = (VS - VDO )/R
vo(DC) = Vo @ ( 1/ )VS - VDO /2
V
t = ( - 2 ) where = to = sen -1 DO
VS
vomax = VS - VDO
PIV = 2VS - VDO
Diodes
Full-wave rectifier utilizing a transformer with a center-tapped secondary winding. (a) Circuit. (b) Transfer characteristic assuming a
constant-voltage-drop model for the diodes. (c) Input and output waveforms.
iDmax = (VS - VDO )/R
vo(DC) = Vo @ ( 2/ )VS - VDO
-1
2VDO
t = ( - 2 ) where = to = sen
VS
vomax = VS - 2VDO
PIV = VS - VDO
The bridge rectifier: (a) circuit and (b) input and output waveforms.
Diodes
iDmax = (VS - 2VDO )/R
vo(DC) = Vo @ ( 2/ )VS - 2VDO

2V p
= I L 1 +
Vr
iDmax
iDav
t @ 2Vr
Vp
\ PIV @ 2V p
Diodes
Voltage and current waveforms in the peak rectifier circuit with CR >> T. The diode is assumed ideal. (Half Wave)
2V p
= I L 1 + 2
Vr
1
vo(DC) = Vo @ V p - Vr
2
1
iLDC = I L = V p - Vr /R
2
Vp
Vr =
f CR
2V p
= I L 1 +
2Vr
iDmax
iDav
2Vr
Vp
PIV @ V p (Bridge)
PIV @ 2V p (Center Tap)
t @
Diodes
Voltage and current waveforms in the peak rectifier circuit with CR >> T. The diode is assumed ideal. (Full Wave Rectifier)
Vp
= I L 1 + 2
2Vr
1
vo(DC) = Vo @ V p - Vr
2
1
iLDC = I L = V p - Vr /R
2
Vp
Vr =
2f CR
Consider a bridge-rectifier circuit with a filter capacitor C placed across the load
resistor R, for the case in which the transformer secondary delivers a sinusoid of
12 Vrms having 60Hz frequency, and assuming VDO = 0,8 V and a load resistance
R= 100 W. Find the value of C that results in a ripple voltage no larger than 1 Vpp.
What is the DC voltage at the output? Find the load current. Find de diodes
conduction angle. What is the average diode current? What is the peak reverse
voltage across each diode? Specify the diode in terms of its peak current and its
PIV. Ans. 1281mF; 15.4V or (a better estimate) 14.9V; 0.15A; 0.36 rad; 1.45A;
2.74A; 16.2V. Thus select a diode with 3.5 to 4 A peak current and a 25 V PIV
rating (50%).
It is required to use a peak rectifier to design a DC power supply that provides an
average DC output voltage of 15V on which a maximum of 1V ripple is allowed.
The rectifier feeds a load of 150W. The rectifier is fed from the line voltage
(120Vrms 60Hz) through a transformer. The diodes available have 0.7V drop when
conducting. If the designer opts for the half-wave circuit: (a) Specify the rms
voltage that must appear across the transformer secondary. (b) Find the required
value of the filter capacitor. (c) Find the maximum reverse voltage that will appear
across the diode, and specify the PIV rating of the diode. (d) Calculate the average
current through the diode during conduction. (e) Calculate the peak diode current.
Ans. (a) 11.8Vrms; (b) 889mF; (c) 32.7V; (d) 2.61A; (e) 1.36 A.
Diodes
2.
1.
Exercises (5)
Diodes
A VARIETY OF BASIC LIMITING CIRCUITS.
3
6.75
vo=vi
vi
vo=(4/5)vi+3/5
vo=(4/7)vi+15/7
-6
5
-9.6
9.6
vi
vo=vi
vo=(1/6)vi-8
-9.6
9.6
vi
vo=vi
vo=(2/3)vi-2
-6
vo
Assuming the diodes has a 0.7V drop when conducting and the zener specified
voltage is 8.2V (ideal), describe the transfer characteristic of the circuits shown in
vo
Figure below.
vo=(1/6)vi+8
vo
vo=(3/4)vi+5/4
5
Assuming the diodes to be ideal, describe the transfer characteristic of the circuits
shown in Figure below.
Diodes
2.
1.
Exercises (6)
vi
10V
10V
-10V
10V
vO
vO
10V
10V
Diodes
Determine VX to have an average voltage of output A for the circuit shown in figure
below. Consider the diode ideal and the input signal is that shown in figure below.
Ans.: VX = -(1/2)A V
-6V
4V
-6V
4V
vi
The Clamped Capacitor or DC Restorer
Diodes
-2VP
-VP
vD1
t
-VP
VP
v1
-2VP
vO
The Voltage Doubler
Diodes
Light-Emitting Diodes (LEDs)
Photodiodes
Varactors
The Schottky-Barrier Diode (SBD)
SPECIAL DIODES TYPES
- light
(E=hn)
- heat
Diodes
iD
20
iD(mA)
1.0
vD
B.G. Streetman, Solid State Electronic Devices,

2nd edition, Prentice-Hall, 1980
10
Materials:
GaAs ( infrared )
GaAs1-xPx
GaAs0.6P0.4 red light ( EG 1.8 eV )
n = EG / h
h: Plancks constant
h=6.63x10-34 Jsec
recombination
electron (+)
hole
(-) energy
Light-emitting diodes (LED)
Photonic Devices
2.0
vD(V)
gop
Diodes
Gop: optical generation rate

Relative number of MINORITY carriers
increase by a large amount drift current
increases.
hn > EG
Photodiodes (1/2)
iD
vD
dark current
iD
vD
iD
vD
vD
nV
i D = I s e T - 1 - i PH
VOC = vD
iD = 0
= -i PH
I SC
iD
VOC
iPH
= n VT ln
Is
v D =0
No
illumination
ISC = i D
Model for optically illuminated diode. iPH represents

the current generated by absorption of photons in the
vicinity of the pn junction.
iPH
Diodes
Photodiodes (2/2)
a,c p = vD x iD > 0
b p = vD x iD < 0
the diode is a power
source.
vD
(b)
iPH
No illumination: VO = VB
Illumination: VO = VB - Riph
Basic photo-detector circuit (a) and model (b)
(a)
Diodes
+V
Photo detector
+V
v
O
ID
iph
vO = Riph
photodiode
Light-to-voltage
converter R
LED
Optoisolator
-1
Cell Voltage V (V)
Isc
Voc
Pmax
Maximum power 300 mW
Efficiency of solar cells range

between 10% and 20%
3 in
Average solar energy (zenith):

100mW/cm2
VmIm < VocIsc
V = Vm , I = Im for P = Pmax
Solar cells
Terminal characteristics for a pn junction solar cell
-1.0
-0.5
0.0
0.5
1.0
1.5
Diodes
Cell Current Ic (A)

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Celso Jos Faria de Arajo, M.Sc.

Examples (Ideal Diode)

DIODE LOGIC GATES

Simplified physical structure of the junction diode.

k = Boltzmanns constant = 1.38x10 23Joules/Kelvin

The Forward-Bias Region

Graph of i-v characteristic of a p-n junction diode

Diode Current (x1015A)

Diode Current (mA)

Diode Current (mA)

vD = 2.3 nVT log

2.3 nVT V =25mV; n=2 = 0.115@ 120mV

2.3 nVT V =25mV; n=1 = 0.0575@ 60 mV

Diode i-v characteristic on semilog scale

Diode Voltage (V) I S = 1x10-15A V T = 25mV

Diode Current (A)

Example: Area x Scale Current

Diode 1 (0.7 - 1mA) IS1 = 10 e

Diode Current (A)

Diode Current (A)

Diode (0.7V -- 1mA; n = 1 and T=20 )

General Diode V = - 2mVo

Forward Bias Region

Diode Current (A)

Reverse Bias Region

3. A junction Diode is operated in a circuit in which it is supplied with a constant current

To begin the iteration, we assume that VD=0.7V

Piecewise-linear Model of the diode forward characteristic and its

Example of Piecewise-linear model of the diode forward characteristic.

Equivalent circuit model

rd is a small-signal resistance or incremental resistance

Development of the diode small-signal model.

vd (peak) = 5.35mVp , since vd << nVT the small- signal

DC analysis (we assume VD @ 0.7 V)

Example of using small-signal model (1)

the small- signal model is justified.

since vd = 6.2mVp << nVT

Example of using small-signal model (2)

Circuit symbol for a zener diode.

Model for the zener diode.

Operation in the Reverse Breakdown Region-Zener Diodes.

VSmin -VZO - rz IZmin

Load Regulation = -(rz //R)

Design of the Shunt Regulator

VO = 6.76V (c) VO = -68mV

VZO = 6.8- 20 5m = 6.7V

Zener Diode - Example

Block Diagram of a DC Power Supply.

iDmax = (VS - VDO )/R

vo(DC) = Vo @ ( 1/ )VS - VDO /2

iDmax = (VS - VDO )/R

vo(DC) = Vo @ ( 2/ )VS - VDO

iDmax = (VS - 2VDO )/R

vo(DC) = Vo @ ( 2/ )VS - 2VDO

PIV @ 2V p (Center Tap)

A VARIETY OF BASIC LIMITING CIRCUITS.

The Clamped Capacitor or DC Restorer

The Voltage Doubler

Light-Emitting Diodes (LEDs)

The Schottky-Barrier Diode (SBD)

SPECIAL DIODES TYPES

B.G. Streetman, Solid State Electronic Devices,