NXP RF Manual 15th Edition

RF Manual 15th edition
Application and design manual

for High Performance RF products
May 2011
High Performance RF for the most demanding applications
NXPs RF Manual makes

design work much easier
NXP's RF Manual is one of the most important reference tools on the market for
todays RF designers. It features our complete range of RF products, from low- to
high-power signal conditioning and high-speed data converters.
High Performance RF for the most demanding applications

When it comes to the most demanding RF applications, the first thing on the designer's mind is to meet the specified
performance. So that is exactly what NXP enables you to do, with the added benefits of silicon-based, volume
manufacturing process technologies. That means you can design your systems to the highest specifications, while still
retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels.
Shipping more than four billion RF products annually, NXP is a clear industry leader in High Performance RF. From
satellite receivers, cellular base stations, and broadcast transmitters to ISM (Industrial, Scientific, and Medical) and
aerospace and defense applications, you will find the High Performance RF products you need at NXP. And constant
innovation ensures you always have the most effective solutions at your fingertips whether it's innovative Doherty
power amplifier architectures, JESD204A CGV TM serialized data interfaces, or tiny GPS LNAs.
So if you're looking to improve your RF performance, design a highly efficient signal chain, or break new ground with an
innovative ISM application, then NXP's creative thinking and expert support can help you every step of the way.
High Performance RF design challenge
The day-to-day work offers many challenges to the RF designer, from the high diversity of signals to integration, or simply
the time spent. We recently started a design challenge (www.hprf-design-challenge.nxp.com). It offers a forum for RF
enthusiasts to walk with us through the steps of a design, from concept to prototype. This is, in essence, the goal of the
RF Manual to make design work easier.
Whats new?
This RF Manual provides updated information on RF applications clustered in different segments. The segments are as
follows: wireless and broadband communication infrastructure, TV and satellite, portable devices, automotive, ISM, and
aerospace and defense.
We describe in detail the new developments in our core technologies, QUBiC4 and LDMOS. We have also added GaN
technology to our product offering; this key technology lets high-power amplifiers deliver very high efficiency in next
generation wireless communication systems.
NXP Semiconductors RF Manual 15th edition
New products include GaN power amplifiers, a complete line of overmolded plastic (OMP) RF power transistors and MMICs, and
our eighth generation LDMOS transistors (Gen8). Next-generation devices and improved products include GPS LNAs, medium
power amplifiers, IF gain blocks, LO generators, satellite LNB ICs, and CATV modules.
Our portfolio for the wireless communication infrastructure has expanded, with a comprehensive set of best-in-class Doherty
amplifier designs, a broad selection of amplifiers (medium power, variable gain, low noise), mixers, IQ modulators, and our
JESD204A-compliant, high-speed DACs and ADCs.
Im proud to present the 15th edition of our RF Manual. It covers NXPs entire range of RF products and solutions in one
comprehensive catalog, and Im convinced that youll find this version the most compelling and useful yet.
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page

www.nxp.com/rfmanual
Contents
1 Products by application
1.1 Wireless communication infrastructure__________________________________________________________________________________________________________________________________________________________________ 9

1.1.1 Base stations (all cellular standards and frequencies) _______________________________________________________________________________________________________________________________ 9
1.1.2 Point-to-point____________________________________________________________________________________________________________________________________________________________________________________________ 12
1.1.3 Repeater____________________________________________________________________________________________________________________________________________________________________________________________________ 14
1.2 Broadband communication infrastructure_____________________________________________________________________________________________________________________________________________________________15
1.2.1 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________ 15
1.2.2 CATV electrical (line extenders) _______________________________________________________________________________________________________________________________________________________________ 16
1.3 TV and satellite_______________________________________________________________________________________________________________________________________________________________________________________________________ 17
1.3.1 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________ 17
1.3.2 Basic TV tuner____________________________________________________________________________________________________________________________________________________________________________________________ 19
1.3.3 Satellite outdoor unit, low noise block (LNB) for multiple users _ ____________________________________________________________________________________________________________ 20
1.3.4 Satellite multi-switch box - 4x4 (up to 16x16) / DiSEqC / SMATV______________________________________________________________________________________________________________21
1.3.5 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 22
1.4 Portable devices_ ____________________________________________________________________________________________________________________________________________________________________________________________________24
1.4.1 GPS____________________________________________________________________________________________________________________________________________________________________________________________________________24
1.4.2 FM radio_ __________________________________________________________________________________________________________________________________________________________________________________________________ 25
1.4.3 Cellular receive__________________________________________________________________________________________________________________________________________________________________________________________26
1.4.4 802.11n WLAN (dual concurrent)_______________________________________________________________________________________________________________________________________________________________27
1.4.5 Generic RF front-end_________________________________________________________________________________________________________________________________________________________________________________28
1.5 Automotive ____________________________________________________________________________________________________________________________________________________________________________________________________________ 29
1.5.1 Active antenna, e.g. SDARS, GPS___________________________________________________________________________________________________________________________________________________________________ 29
1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ___________________________________________________ 30
1.5.3 Tire pressure monitoring system_______________________________________________________________________________________________________________________________________________________________31
1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)_________________________________________________________________________________________________________________________32
1.6 Industrial, scientific & medical (ISM)_____________________________________________________________________________________________________________________________________________________________________ 33
1.6.1 Broadcast / ISM (10 - 1500 MHz range) ___________________________________________________________________________________________________________________________________________________ 33
1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee_ ______________________________________________________________________________________________________________34
1.6.3 RF Microwave furnace application_ __________________________________________________________________________________________________________________________________________________________ 35
1.6.4 RF plasma lighting____________________________________________________________________________________________________________________________________________________________________________________ 36
1.6.5 Medical imaging _______________________________________________________________________________________________________________________________________________________________________________________37
1.7 Aerospace and defense_________________________________________________________________________________________________________________________________________________________________________________________ 38
1.7.1 Microwave products for avionics, L- and S-band radar applications _ _____________________________________________________________________________________________________ 38
2 Focus applications, products & technologies
40
2.1 Wireless communication infrastructure_ _______________________________________________________________________________________________________________________________________________________________ 40

2.1.1 VGAs with superior linearity for enhanced system performance_____________________________________________________________________________________________________________ 40
2.1.2 Doherty amplifier technology for state-of-art wireless infrastructure______________________________________________________________________________________________________42
2.1.3 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8_______________________________________________________________________________ 44
2.2 Broadband communication infrastructure____________________________________________________________________________________________________________________________________________________________ 45
2.2.1 Connecting people, protecting your network: NXP's CATV C-family for the Chinese SARFT standard_________________________________________________ 45
2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks_ __________________________________________________________________________________ 48
2.3 TV and satellite______________________________________________________________________________________________________________________________________________________________________________________________________ 50
2.3.1 LNAs for TV/STB tuners with programmable gain___________________________________________________________________________________________________________________________________ 50
2.3.2 Complete satellite portfolio for all LNB architectures______________________________________________________________________________________________________________________________52
2.3.3 VSAT, 2-way communication via satellite__________________________________________________________________________________________________________________________________________________ 54
2.3.4 Low noise LO generators for microwave & mmWave radios____________________________________________________________________________________________________________________ 56
2.4 Portable devices____________________________________________________________________________________________________________________________________________________________________________________________________ 57
2.4.1 QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification_______________________________________________________________________________57
2.5 Industrial, scientific & medical_ ______________________________________________________________________________________________________________________________________________________________________________59
2.5.1 Medical applications driven by RF power_________________________________________________________________________________________________________________________________________________59
2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 60
2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function______________________________________________________________________________________________________________________________ 61
2.5.4 Buidling on decades of innovation in microwave and radar_ ___________________________________________________________________________________________________________________ 62
2.5.5 Digital broadcasting at its best________________________________________________________________________________________________________________________________________________________________ 64
2.5.6 Broadband medium power amplifiers for all 400 to 2700 MHz applications___________________________________________________________________________________________ 65
2.6 Technology_____________________________________________________________________________________________________________________________________________________________________________________________________________ 66
2.6.1 Boost efficiency and lower system cost in wireless infrastructure with GaN___________________________________________________________________________________________ 66
2.6.2 Looking for a leader in SiGe:C? You've just found us!_______________________________________________________________________________________________________________________________67
2.6.3 Completing NXP's RF power transistor offering: products in plastic packages (OMP)____________________________________________________________________________69
6
3 Products by function
70
3.1 New products_______________________________________________________________________________________________________________________________________________________________________________________________________70

3.2 RF diodes _____________________________________________________________________________________________________________________________________________________________________________________________________________73
3.2.1 Varicap diodes __________________________________________________________________________________________________________________________________________________________________________________________73
3.2.2 PIN diodes ________________________________________________________________________________________________________________________________________________________________________________________________ 74
3.2.3 Band switch diodes_ __________________________________________________________________________________________________________________________________________________________________________________ 76
3.2.4 Schottky diodes_________________________________________________________________________________________________________________________________________________________________________________________ 76
3.3 RF Bipolar transistors _________________________________________________________________________________________________________________________________________________________________________________________ 77
3.3.1 Wideband transistors________________________________________________________________________________________________________________________________________________________________________________77
3.4 RF ICs __________________________________________________________________________________________________________________________________________________________________________________________________________________ 80
3.4.1 RF MMIC amplifiers and mixers________________________________________________________________________________________________________________________________________________________________ 80
3.4.2 Wireless infrastructures ICs______________________________________________________________________________________________________________________________________________________________________ 82
3.4.3 Satellite LNB RF ICs__________________________________________________________________________________________________________________________________________________________________________________ 82
3.4.2 Low noise LO generators for VSAT and general microwave applications________________________________________________________________________________________________ 83
3.5 RF MOS transistors_ ____________________________________________________________________________________________________________________________________________________________________________________________ 83
3.5.1 JFETs_ _______________________________________________________________________________________________________________________________________________________________________________________________________ 83
3.5.2 MOSFETs__________________________________________________________________________________________________________________________________________________________________________________________________ 85
3.6 RF Modules _________________________________________________________________________________________________________________________________________________________________________________________________________ 87
3.6.1 CATV push-pulls _______________________________________________________________________________________________________________________________________________________________________________________87
3.6.2 CATV push-pulls 1 GHz_____________________________________________________________________________________________________________________________________________________________________________87
3.6.3 CATV power doublers______________________________________________________________________________________________________________________________________________________________________________ 88
3.6.4 CATV optical receivers_____________________________________________________________________________________________________________________________________________________________________________ 88
3.6.5 CATV reverse hybrids_______________________________________________________________________________________________________________________________________________________________________________ 88
3.7 RF power transistors___________________________________________________________________________________________________________________________________________________________________________________________ 89
3.7.1 Base station transistors_ ___________________________________________________________________________________________________________________________________________________________________________ 89
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors______________________________________________________________________________________________________ 92
3.7.3 Microwave LDMOS RF power transistors__________________________________________________________________________________________________________________________________________________93
3.8 High-speed data converters________________________________________________________________________________________________________________________________________________________________________________94
4 Design support
95
4.1 S-parameters ______________________________________________________________________________________________________________________________________________________________________________________________________ 95

4.2 Simulation models_______________________________________________________________________________________________________________________________________________________________________________________________ 95
4.2.1 Spice models_____________________________________________________________________________________________________________________________________________________________________________________________95
4.2.2 Interactive datasheet ________________________________________________________________________________________________________________________________________________________________________________95
4.2.3 Simulation models for RF power devices_ _________________________________________________________________________________________________________________________________________________96
4.3 Application notes________________________________________________________________________________________________________________________________________________________________________________________________ 96
4.4 Demo boards _ _____________________________________________________________________________________________________________________________________________________________________________________________________ 96
4.4.1 RF transistors, MMIC & IC demo boards___________________________________________________________________________________________________________________________________________________96
4.4.2 RF power transistor demo boards_____________________________________________________________________________________________________________________________________________________________97
4.4.3 High-speed converter demo boards_________________________________________________________________________________________________________________________________________________________97
4.5 Samples _______________________________________________________________________________________________________________________________________________________________________________________________________________ 97
4.6 Datasheets_ _________________________________________________________________________________________________________________________________________________________________________________________________________ 97
4.7 Design-in support_ ______________________________________________________________________________________________________________________________________________________________________________________________ 98
4.8 Interactive selection guides________________________________________________________________________________________________________________________________________________________________________________ 98
5 Cross-references & replacements_________________________________________________________99

5.1
Cross-references: manufacturer types versus NXP types________________________________________________________________________________________________________________________ 99
5.2
Cross-references: NXP discontinued types versus NXP replacement types__________________________________________________________________________________________109
6 Packing and packaging information______________________________________________________ 111

6.1
Packing quantities per package with relevant ordering code_________________________________________________________________________________________________________________ 111
6.2
Marking codes list_ __________________________________________________________________________________________________________________________________________________________________________________ 114
7 Abbreviations__________________________________________________________________________ 116
8 Contacts and web links_________________________________________________________________ 117
9 Product index__________________________________________________________________________ 118
1. Products by application
1.1 Wireless communication infrastructure
Products
by application
1.1.1 Base stations (all cellular standards and frequencies)

See also brochure: 'Your partner in Mobile Communication Infrastructure design', document number 9397 750 16837.
Application diagram
LPF
I/Q-MOD
mixer
SER I-DAC
PLL
VCO
PLL
LPF
DIGITAL BASEBAND & CONTROL
POWER AMPLIFIER
X
0
VGA
Tx BPF
MPA
HPA
Isolator
90
antenna
Tx/Rx
SER Q-DAC
mixer
BPF
VGA
IF mixer
SER ADC
mixer
PLL
VCO
C
LPF
VGA
duplexer
IF mixer
Rx BPF
LNA
LNA
SER ADC
PLL
VCO
PLL
antenna
Rx1
TOWER
MOUNTED
AMPLIFIER
SER ADC
LPF
PROCESSING
VGA
IF mixer
DATACONVERTERS
Rx BPF
LNA
RF SMALL SIGNAL
LNA
RF POWER
The block diagram above shows base station transmit (upper part, Tx) and receive (lower part, Rx) functions, and includes the Tx feedback function (middle part, Tx feedback).
The signals generated in the "Digital Baseband & Control" block follow the air interface standard requirements. These signals are interfaced to the DAC via serial
interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain. Before
the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to
RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals
are fed to the VGA to control the power level. An additional band pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power
board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer.
Directly after the final stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF Mixer.
This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first
fed to the VGA to control the power level, and after band pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used
to send the digital signals to the baseband processor.
At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA
is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received
signals. Band pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically
require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low pass filtering is used before the ADC to remove
the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC.
The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up
is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second
receiver, which is also called a diversity receiver.
Recommended products
Function
Product
MMIC
Final
HPA
Integrated Doherty
Final
Driver/Final
Driver
Final
Driver/Final
Integrated Doherty
Final
Function
HPA
Doherty designs
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
GP
(dB)
Package
Type
920
920
700
700
700
500
700
1805
2010
1800
2110
1800
2000
2500
2500
2500
2500
3400
3500
960
960
1000
1000
1000
1000
1000
1880
2025
2050
2170
2200
2200
2700
2700
2700
2700
3600
3800
30
250
80
140
160
300
300
250
50
140
40
10
160
40
50
100
140
100
90
29
19
19
19
19
19
19
18
14,5
19
19
19
18
17,5
17,5
17,5
17
13
13
SOT822-1
SOT502
SOT502
SOT1204
SOT502
SOT1121
SOT539
SOT539
SOT1130
SOT1204
SOT1121
SOT1179
SOT502
SOT1121
SOT1130
SOT502
SOT502
SOT502
SOT1246B
BLM6G10-30(G)
BLF7G10L(S)-250
BLF8G10L(S)-80
BLP7G10S-140G
BLF8G10L(S)-160
BLF6H10L(S)-300P
BLF8G10L(S)-300P
BLF7G20L(S)-250P
BLD6G21L(S)-50
BLP7G21(S)-140P(G)
BLF6G22L(S)-40P
BLP7G22-10
BLF7G22L(S)-160
BLF6G27L(S)-40P
BLD7G27S-50
BLF7G27L(S)-100
BLF7G27L(S)-140
BLF6G38(LS)-100
BLF7G38LS-90P
Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type
728-768
920-960
1476-1511
1805-1880
1930-1990
2110-2170
2110-2170
2300-2400
2500-2700
3400-3600
58
57.3
58.1
58.6
58.2
47
57.2
55
50.3
51
50
49.3
49.6
51
50
39
49.2
47.5
42.3
43
32
30
28
28
28
28
28
28
28
28
20.5
16
16
16
16
13
16
15.2
14.5
11.5
47
50
42
47.6
40
38
47
44
39
32
SYM
ASYM
ASYM
3-WAY
SYM
SYM
3-WAY
ASYM
SYM
SYM
Product highlight:
BLF7G27L(S)-100/140
Utilising NXPs Gen7 LDMOS technology, this pair of transistors is
designed to give leading performance in 2.7 GHz LTE applications.
The BLF7G27L(S)-100 is designed to be the main amplifier, and the
BLF7G27L(S)-140 the peak amplifier, in asymmetrical Doherty designs.
This pair, along with others at different operational frequencies, are
already firm industry favourites with many design wins around the world.
10
Features
Main transistor
Peak transistor
BLF6G10LS-200RN
BLF8G10LS-160
BLF7G15LS-200
BLF7G20LS-200
BLF7G20LS-250P
BLD6G22L(S)-50
BLF7G22LS-160
BLF7G24LS-100
1/2 BLF7G27LS-90P
BLF6G38-50
BLF6G10LS-200RN
BLF7G10LS-250
BLF7G15LS-300P
2x BLF7G20LS-200
BLF7G20LS-250P
BLD6G22L(S)-50
2x BLF7G22L(S)-160
BLF7G24LS-140
1/2 BLF7G27LS-90P
BLF6G38-50
`` A symmetrical Doherty efficiency 37.6% with 15.2 dB gain at 47.5 dB

output power
`` Capable of 26-32 V operation
`` Extremely low thermal resistance
`` Consistent device performance
`` Unrivalled ruggedness
Discrete
attenuator
Function
Product
RF diode
PIN diode
Product
RF transistor
SiGe:C transistor
MMIC
SiGe:C MMIC
Package
SOT753
SOT753
Various^
Type
BAP64Q
BAP70Q
BAP64
Package
Type
BFU725F/N1
BFU690F
BFU730F
BFU760F
BFU790F
BGU7051
BGU7052
BGU7053
SOT343F
LNA (low noise

amplifier)
Function
Single VGA
(variable gain
amplifier)
Product
Function
Dual VGA
(variable gain
amplifier)
Product
Function
Product
MPA
(medium
power
amplifier)
Function
Dual mixer
Gain range
23 dB
MMIC
31 dB
Gain range
24 dB
MMIC
28 dB
MMIC
Type
BGA7202
SOT617
BGA7204
Package
Type
BGA7350
SOT617
BGA7351
Package
Type
25 dBm
24 dBm
28 dBm
28 dBm
30 dBm
SOT908
SOT89
SOT908
SOT89
SOT908
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
Package
Type
BGX7220*
BGX7221*
Frequency
0.7 - 1.2 GHz
1.7 -2.7 GHz
Function
Product
PLL + VCO
MMIC
(LO generator)
Noise
131 dBc/Hz @ 1 MHz
offset @ 5.3 GHz
Function
IQ modulator
NFL
Product
MMIC
Package
PL (1dB) @ 940 MHz
MMIC
Product
SOT650
-159 dBm/Hz
Products
by application
Function
SOT1092
Package
Type
SOT617
BGX7300*
Package
SOT616
Type
BGX7100*
* = check status at 3.1 new products, as this type has not been released
for mass production.
^ = SOD523, SOD323, SOT23 & SOT323
Function
Product
Dual-channel DAC
Data converter
Single-channel ADC
Dual-channel ADC
Max. sampling
frequency
# of bits
Interface
Type
650 Msps
14
LVCMOS
DAC1405D650
160 Msps
14
LVCMOS
DAC1405D160
125 Msps
14
LVCMOS
DAC1401D125
750 Msps
14
JESD204A
DAC1408D750
80 Msps
12
LVCMOS
ADC1207S080
125 Msps
14
LVCMOS&LVDS DDR
ADC1415S125
125 Msps
14
LVCMOS&LVDS DDR
ADC1410S125
125 Msps
11
LVCMOS&LVDS DDR
ADC1112D125
125 Msps
14
LVCMOS&LVDS DDR
ADC1412D125
125 Msps
14
JES204A
ADC1413D125
Product highlight:
DAC1408D750 dual 14-bit DAC with JESD204A interface
Optimized for high-speed applications, such as 2.5/3/4G wireless,
video broadcast, and instrumentation, this advanced 14-bit DAC has
selectable interpolating filters and a four-lane CGV serial interface
compliant with JEDEC JESD204A standard.
Features
`` Dual-channel, 14-bit resolution

`` 750 Msps maximum output rate
`` Interpolation filters: 2x, 4x, 8x
`` Four-lane JEDEC JESD204A serial digital input
`` 32-bit programmable NCO frequency synthesizer with low-power option
`` MDS (Multi-DAC Synchronization)
`` SPI interface
`` HVQFN64 package
11
1.1.2 Point-to-point
Application diagram
INDOOR UNIT
POWER
SUPPLY
OUTDOOR UNIT
PLL VCO
MPA
VGA
IF
VGA
PA
MPA
BPF
90
BUF
DIGITAL
SIGNAL
PROCESSOR
REF
MPX
PMU
PLL VCO
90
ANALOG
VGA
VGA
to/from
IDU
MPX
REF
PMU
SYNTH
PLL
ANTENNA
PLL
IF
LNA
LNA
LNA
LPF
VGA
VGA
DATA
INTERFACE
brb406
Indoor unit
Function
Product
Single VGA
(variable gain
amplifier)
Function
MMIC
Product
Dual VGA
(variable gain
amplifier)
Function
MMIC
Product
MPA
(medium
power
amplifier)
Function
IQ
modulator
MMIC
Product
MMIC
Gain range
23 dB
31 dB
Gain range
24 dB
28 dB
Package
SOT617
Package
SOT617
Type
BGA7202
BGA7204
Type
BGA7350
BGA7351
PL (1dB) @
940 MHz
17 dBm
20 dBm
21 dBm
25 dBm
24 dBm
28 dBm
28 dBm
30 dBm
SOT908
SOT89
SOT908
SOT89
SOT908
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
NFL
Package
Type
- 159 dBm/Hz
SOT616
BGX7100*
Package
SOT89
Product
MMIC
MMIC
General
purpose
wideband
amplifiers
IF
Function
Package
IF gain block
Type
* = c heck status at 3.1 new products, as this type has not been released
for mass production.
12
Function
Product
RF MMIC
LNA
SOT363
Package
SOT891
SiGe:C
MMIC
SiGe:C
transistor
SOT650
SOT343F
RF transistor
Wideband
transistor
SOT343R
SOT143R
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
BGA2714
BGA2748
BGA2771
Type
BGU7003
BGU7051
BGU7052
BGU7053
BFU725F/N1
BFU710F
BFU730F
BFG425W
BFG424W
BFG325/XR
Outdoor unit
Single VGA
(variable
gain
amplifier)
Function
MPA
(medium
power
amplifier)
Function
Buffer
Function
LNA
Function
Product
Gain range
Package
23 dB
MMIC
BGA7202
SOT617
31 dB
Product
MMIC
PL (1dB)
@ 940 MHz
17 dBm
20 dBm
21 dBm
25 dBm
24 dBm
28 dBm
28 dBm
30 dBm
Product
RF transistor
SiGe:C
transistor
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
SOT343F
Package
SiGe:C
transistor
Product
IF gain block
BGA7204
Package
Product
RF transistor
SOT343F
Package
MMIC
SOT363
IF
MMIC
Type
General
purpose
wideband
amplifiers
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
Type
BFU725F/N1
BFU730F
BFU760F
BFU790F
Type
BFU725F/N1
BFU730F
BFU760F
BFU790F
Function
Dual VGA
(variable
gain
amplifier)
Function
PLL + VCO
(LO
generator)
Function
Oscillator
Product
Gain range
Package
24 dB
MMIC
Type
BGA7350
SOT617
28 dB
Product
MMIC
Noise
Package
Type
-131 dBc/Hz @
1 MHz offset
@ 5.3 GHz
SOT617
BGX7300*
Package
Type
BFG424W
BFG425W
BFU725F/N1
BFU730F
BFU760F
BFU790F
Product
RF transistor
BGA7351
Wideband
transistor
SOT343R
SiGe:C
transistor
SOT343F
Products
by application
Function
* = check status at 3.1 new products, as this type has not been released for
mass production.
NXP BTS Tx component demonstrator board
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
Product highlight:
BGA7350 MMIC variable gain amplifier
The BGA7350 MMIC is a dual independent digitally controlled IF
variable gain amplifier (VGA) operating from 50 to 250 MHz. Each IF
VGA amplifies with a gain range of 24 dB and, at its maximum gain
setting, delivers 17 dBm output power at 1 dB gain compression
and a superior linear performance. The BGA7350 is optimized for a
differential gain error of less than 0.1 dB for accurate gain control
and has a total integrated gain error of less than 0.4 dB. It is housed
in a 32-pin leadless HVQFN package (5 x 5 mm).
Features
`` Dual independent digitally controlled 24 dB gain range VGAs,

with 5-bit control interface
`` 50 to 250 MHz frequency operating range
`` Gain step size: 1 dB 0.1 dB
`` 18.5 dB power gain
`` Fast gain stage switching capability
`` 17 dBm output power at 1 dB gain compression
`` 5 V single supply operation with power-down control
`` Logic-level shutdown control pin reduces supply current
`` ESD protection at all pins
`` Unconditionally stable
13
1.1.3 Repeater
Application diagram
Dual mixer
Tx0
PA
mixer
Dual DAC
Dual ADC
LPF
I-DAC
PA
LPF
VGA
LPF
VGA
Dual mixer
mixer
Q-DAC
PLL
VCO
LO Signal
brb631
Product
Dual-channel DAC
Dual-channel ADC
Product
Driver/Final
Integrated Doherty
Driver/Final
MMIC
Integrated Doherty
Driver/Final
Function
fmin (MHz)
1450
1800
2010
1
2100
2110
2300
3400
3400
Product
MPA
(medium power amplifier)
Function
MMIC
Product
Dual VGA
(variable gain amplifier)
Function
MMIC
Product
Dual mixer
Function
MMIC
Max. sampling
frequency
650 Msps
160 Msps
125 Msps
750 Msps
125 Msps
125 Msps
125 Msps
fmax (MHz)
1550
2000
2025
2200
2200
2170
2700
3800
3800
P1dB (W)
40
40
50
10
30
50
75
25
50
Product
PLL + VCO
(LO generator)
MMIC
14
14
14
14
11
14
14
GP (dB)
22
18.8
14.5
18.5
29.5
14
17
15
14
Interface
Type
LVCMOS
LVCMOS
LVCMOS
JESD204A
LVCMOS&LVDS DDR
LVCMOS&LVDS DDR
JES204A
DAC1405D650
DAC1405D160
DAC1401D125
DAC1408D750
ADC1112D125
ADC1412D125
ADC1413D125
Package
SOT1112A
SOT608A
SOT1130B
SOT538A
SOT834-1
SOT1130B
SOT1121B
SOT608B
SOT502A
Type
BLF6G15L-40BRN
BLF6G20-40
BLD6G21LS-50
BLF6G21-10G
BLM6G22-30
BLD6G22LS-50
BLF7G27LS-75P
BLF6G38S-25
BLF6G38-50
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
Type
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130
Gain range
24 dB
Package
Type
BGA7350
28 dB
Frequency range
1.7 - 2.7 GHz
0.7 - 1.2 GHz
SOT617
BGA7351
Package
Type
BGX7220*
BGX7221*
SOT1092
Package
MMIC
LNA
# of bits
PL (1 dB) @ 940 MHz

21 dBm
25 dBm
24 dBm
28 dBm
28 dBm
30 dBm
Product
Function
LNA
ADC
Data converter
HPA
RF SAW
Rx0
mixer
Clock
Recovery
jitter
cleaner
Function
LNA
Rx1
mixer
Function
LNA
RF SAW
ADC
DDC/
DUC
Filtering
Tx1
Dual VGA
LPF
Type
BGU7051
BGU7052
BGU7053
SOT650
Noise
Package
Type
-131 dBc/Hz @ 1 MHz

offset @ 5.3 GHz
SOT617
BGX7300*
* = check status at 3.1 new products, as this type has not been released for mass production.
Product highlight:
BGX7221 MMIC dual down-mixer
The BGX7221 combines a pair of high performance, high linearity
down-mixers for use in receivers that have a common local oscillator
used with, for example, main and diversity paths. The device covers
frequency bands from 1700 to 2700 MHz with an extremely flat
behavior.
14
Features
`` 8.5 dB conversion gain over all bands

`` 13 dBm input, 1 dB compression point
`` 25.5 dBm input third-order intercept point
`` 10 dB (typ) small signal noise figure
`` Integrated active biasing
`` Single +5 V supply operation
`` Power-down per mixer with hardware control pins
`` Low bias current in power-down mode
`` Matched 50 single-ended RF and LO input impedances
1.2 Broadband communication infrastructure

1.2.1 CATV optical (optical node with multiple out-ports)
RF power
amplifier
Products
by application
Application diagram
duplex
filter
coax out
port 1
fiber in
RF forward
receiver
RF preamplifier
splitter
coax out
port 2
coax out
port 3
coax out
port 4
bra852
Function
RF forward
receiver
Function
RF
pre-amplifier
Product
Forward
path receiver
Frequency
870 MHz
Product
Frequency
Power doubler
870 MHz
870 MHz
Push-pulls
1 GHz
Function
RF power
amplifier
Product
Power
doublers
Frequency
870 MHz
1 GHz
Package
SOT115
SOT115
SOT115
Type
BGO807
BGO807CE
BGO827
Gain (dB)
18.2 - 18.8
18 - 19
21 - 22
23 - 24.5
27 - 28.5
Type
BGD812
BGY885A
BGY887
CGY1043
CGY1047
Gain (dB)
22 - 24
24 - 26
22 - 23.5
26.5 - 28
Type
CGD942C
CGD944C
CGD1042Hi
CGD1046Hi
Product highlight:
BGO807CE optical receiver
The BGO807CE is an integrated optical receiver module that
provides high output levels and includes an integrated temperaturecompensated circuitry. In your optical node design, BGO807CE
enables a high performance/ price ratio and ruggedness. When
upgrading an HFC network from analog to digital, our BGO807CE
is the perfect fit.
Features
`` E xcellent linearity
`` Low noise
`` E xcellent flatness
`` Standard CATV outline
`` Rugged construction
`` Gold metallization ensures excellent reliability
`` High optical input power range
15
1.2.2 CATV electrical (line extenders)

Application diagram
duplex
filter
RF preamplifier
RF power
amplifier
duplex
filter
coax in
coax out
RF reverse
amplifier
bra505
Function
Product
Frequency
550 MHz
600 MHz
750 MHz
RF
pre-amplifier
Push-pulls
870 MHz
1003 MHz
Function
Product
RF reverse
amplifier
Reverse
hybrids
Frequency
5-75 MHz
5-120 MHz
5-200 MHz
Gain (dB)
34 - 35
33.5 - 35.5
26.2 - 27.8
21 - 22
33.2 - 35.2
18 - 19
21 - 22
18 - 19
21 - 22
33.5 - 34.5
34.5 - 36.5
18 - 19
21 - 22.5
23 - 24.5
27 - 28.5
29 - 31
32 - 34
Type
BGY588N
BGY588C
BGY587B
BGY687
BGE788C
BGY785A
BGY787
BGY885A
BGY887
BGY888
CGY888C
BGY1085A
CGY1041
CGY1043
CGY1047
CGY1049
CGY1032
Gain (dB)
29.2 - 30.8
24.5 - 25.5
23.5 - 24.5
Type
BGY68
BGY66B
BGY67A
Function
Product
Frequency
550 MHz
750 MHz
870 MHz
RF power
amplifier
Power
doublers
1003 MHz
Gain (dB)
18-19
19.5 - 20.5
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18 - 19
18.2 - 18.8
19.7 - 20.3
22 - 23
24 - 26
22 - 24
24 - 26
19.5 - 22
22 - 23.5
23.5 - 25.5
26 - 28
22 - 24
23.5 - 25.5
26 - 28
All available in SOT115 package.
Product highlight:
CGD1046Hi
The CGD1046Hi with a high-output power level is primarily designed
for use in fiber deep-optical-node applications (N+1/2/3).
This 1 GHz hybrid amplifier solution offers an extended temperature
range, high power overstress capabilities in case of surges, and high
ESD levels resulting in a low cost of ownership. Its designed for
durability and offering superior ruggedness.
16
Features
`` High-output power
`` High power gain for power doublers
`` Extremely low noise
`` Dark Green products
`` GaAs HFET dies for high-end applications
`` Superior levels of ESD protection
`` Integrated ringwave protection
`` Design optimized for digital channel loading
`` Temperature compensated gain response
`` Optimized heat management
`` Excellent temperature resistance
Type
BGD502
BGD704
BGD712
BGD712C
BGD714
BGD802
BGD812
BGD814
CGD942C
CGD944C
CGD1042H
CGD1044H
CGD1040Hi
CGD1042Hi
CGD1044Hi
CGD1046Hi
CGD982HCi
CGD985HCi
CGD987HCi
1.3 TV and satellite

1.3.1 Network interface module (NIM) for TV reception
RF input
VGA
surge
Products
by application
Application diagram
CONVENTIONAL
TUNER OR
SILICON TUNER
RF SW
WB LNA
RF output
brb403
Function
Product
5 V silicon RF
switch
RF Switch /
PLT switch
MOSFET
3.3 V silicon
RF switch
Package
SOT23
SOT143B
SOT143R
SOT343
SOT343R
SOT143B
SOT143R
SOT343
SOT343R
Type
BF1107
BF1108
BF1108R
BF1108W
BF1108WR
BF1118
BF1118R
BF1118W
BF1118WR
Product highlight:
Save energy with BF11x8
The BF11x8 series are small signal, RF switching MOSFETs that can
be used for switching RF signals up to 1 GHz. By using the BF11x8
series as an RF switch, you can save a considerable amount of energy.
When a recording device (DVD-R, HDD-R, VCR, DVR) is powered
off, viewers can still watch TV, although the antenna is looped via
the recording device. Without the BF11x8, the antenna signal is lost.
Function
AGC control
amplifier
Product
MOSFET
Package
Type
2-in-1 with
band switch
@5V
SOT363
BF1215
2-in-1 @ 5 V
SOT363
BF1216
5V
SOT343
BF1217
Note: given that there is now an LNA before the MOSFET, the gain of these
MOSFETs is made slightly lower and the cross-modulation higher. That way, the
MOSFET would not constantly be under AGC even under nominal RF input level.
When power to the recording device is on, the BF11x8 is open, so

the RF signal travels via the recording device to the TV tuner. When
power to the recording device is off, the BF11x8 closes. This ensures
that the RF signal is looped through directly to the TV tuner and that
TV reception is guaranteed. Energy is saved because the recording
device can be powered off.
17
Function
VGA
LNA
Product
MMIC
RF bipolar
transistor
Package
Type
Wideband
amplifier
with gain
levels of 5
and 10 dB,
plus a bypass
mode.
Vsupply = 5 V
SOT363
BGU7033^
Wideband
amplifier
with gain
level of 10 dB
and a bypass
mode.
Vsupply = 5 V
SOT363
BGU7032^
Wideband
amplifier
with gain
level of 10 dB
and a bypass
mode.
Vsupply = 3.3 V
SOT363
BGU7042^
Wideband
amplifier
with gain
level of
10 dB.
Vsupply = 5 V
SOT363
BGU7031^
Wideband
amplifier
with gain
level of
10 dB.
Vsupply = 3.3 V
SOT363
BGU7041^
Wideband
transistor
SOT143
SOT89
BFG520
BFG540
BFQ540
^ = This new series of LNA MMICs is designed specifically for high linearity
(IP3O of 29 dBm), low noise applications like those in an active splitter or
NIM tuner. Housed in a 6-pin SOT363 plastic SMD package, these MMICs
are equipped with internal bias and matched to 75 internally. For the VGAs,
current consumption is < 5 mA during the bypass mode. Only two external
components are needed, thus saving precious circuit board space.
Product highlight:
Make a high performance active splitter in a NIM tuner
with BGU703x/ BGU704x
Today's TV tuners require complicated signal handling and benefit
from flexibility in design. The front-end of a TV signal receiver is no
longer just a tuned receiver, but has evolved into an RF Network
Interface Module (NIM) with tuned demodulators, active splitters,
18
and remodulators. The active splitter requires an LNA with excellent

linearity. NXP has developed two new series of LNA/VGA MMICs
(BGU703x/BGU704x), designed especially for high linearity (P3O
of 29 dBm) in low noise applications such as an active splitter in a
NIM tuner. The BGU703x family operates at a supply voltage of 5 V
and is intended for use with normal can tuners. The BGU704x family
operates at 3.3 V and works seamlessly with our Si tuner ICs, which
also operate at 3.3 V.
1.3.2 Basic TV tuner

Application diagram
MOSFET
From antenna,
cable, active splitter,
etc.
MOPLL
IC
Products
by application
RF input
IF
VAGC
bra500
Function
Product
VHF low
Input filter
Varicap
diode
VHF high
UHF
Function
Product
5V
RF
pre-amplifier
MOSFET
2-in-1 @ 5 V
2-in-1 @ 3 V
Package
SOD323
SOD523
SOD882D
SOD323
SOD523
SOD523
SOD882D
SOD882D
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182
BB182LX
BB153
BB178
BB187
BB178LX
BB187LX
BB149A
BB179LX
BB179
BB189
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT666
SOT363
SOT363
SOT363
SOT666
Type
BF1201
BF1202
BF1105
BF1211
BF1212
BF1102R
BF1203
BF1204
BF1205
BF1205C
BF1206
BF1207
BF1208
BF1208D
BF1210
BF1214
BF1218
BF1206F
Function
Bandswitching
Function
Bandpass
filter
Product
Varicap
diode
VHF high
UHF
Function
Product
VHF low
Oscillator
Varicap
diode
VHF high
UHF
RF
pre-amplifier
The device consists of two dual gate mosfet amplifiers in a small

SOT666 flat lead package. The BF1206F is a true low power device
specified for low voltage and low currents, intended for use in mobile
applications where power consumption is critical. Performance is
suitable for application at supply voltages of 3 V and drain currents
of 4 mA.
Bandswitch diode
VHF low
Function
Product highlight:
BF1206F dual gate MOSFET double amplifier
Product
Product
MOSFET
Package
SOD523
SOD523
SOD523
Type
BA277
BA891
BA591
Package
SOD323
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182LX
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Package
SOD323
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182LX
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Package
Type
2-in-1 with
band switch
@5V
SOT363
BF1215
2-in-1 @ 5 V
SOT363
BF1216
5V
SOT343
BF1217
Features
`` Low-power specified
`` Two amplifiers in one small SOT666 package
`` Shared gate 2 and source leads
`` Each amplifier is biased by an external bias resistor
`` E xcellent noise and cross-modulation performance
19
1.3.3 Satellite outdoor unit, low noise block (LNB) for multiple users
Looking for fully integrated mixer/oscillator/downconverter?
See chapter 2.3.2 Complete satellite portfolio for all LNB architectures
Application diagram
horizontal
1st
antenna stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
H low
IF amplifier
oscillator
low
mixer
BIAS IC
V low
mixer
IF amplifier
H high
(4 x 2)
IF
SWITCH
IF
amplifier
IF out 1
IF amplifier
vertical
antenna
high
oscillator
V high
1st
stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
IF
amplifier
IF amplifier
IF out 2
brb022
Function
Product
RF bipolar
transistor
Oscillator
RF transistor
Function
Wideband
transistor
SiGe:C
transistor
Product
General
purpose
amplifier
1st stage
IF
amplifier
MMIC
IF gain block
RF bipolar
transistor
Function
Wideband
transistor
Product
IF switch
RF diode
PIN diode
Package
SOT343
SOT343F
SOT343F
Type
BFG424W
BFG424F
BFU710F
BFU725F/N1
BFU730F
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343F
Type
BGA2711
BGA2712
BGA2748
BGA2714
BGA2717
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BFG424W
BFG424F
Package
various
various
various
various
various
Type
BAP64^
BAP51^
BAP1321^
BAP50^
BAP63^
Function
Product
General
purpose
amplifier
Output
stage IF
amplifier
MMIC
IF gain block
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Type
BGA2709
BGA2776
BGM1014
BGM1012
BGA2716
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
RF bipolar
transistor
Wideband
transistor
SOT343
BFG325
2nd stage LNA
RF transistor
SiGe:C
SOT343F
BFU710F
BFU730F
SiGe:C
transistor
SOT343F
SiGe:C
transistor
SOT343F
Function
Product
3 rd stage LNA
RF transistor
Function
Product
Mixer
RF transistor
Package
Package
Type
BFU710F
BFU730F
Type
BFU710F
BFU730F
^ = also available in ultra small leadless package SOD882D.
Product highlight:
BGA28xx-family of IF gain blocks
The BGA28xx IF gain blocks are silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
20
Features
`` No output inductor necessary when used at the output stage

`` Internally matched to 50
`` Reverse isolation > 30 dB up to 2 GHz
`` Good linearity with low second order and third order products
`` Unconditionally stable (K > 1)
1.3.4 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV

Application diagram
satellite dishe(s)
input
amplifiers
LNB
Products
by application
input
terrestrial
amplifier
input
terrestrial
output
amplifiers
coax out to STB
SWITCH MATRIX
FOR 4 4,
NEEDS 16
(SINGLE) PIN
DIODES
coax out to STB

coax out to STB
coax out to STB
brb023
Function
Input
amplifier
terrestrial
Function
Product
MMIC
Product
MMIC
Input
amplifier
LNB
Package
General
purpose
medium
power
amplifier
RF bipolar
transistor
General
purpose
amplifier
Wideband
transistor
SiGe:C
transistor
Function
Switch
matrix
Product
RF diode
RF transistor
SOT89
SOT908
Package
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343
SOT143
SOT143
SOT343F
Package
PIN diode
SiGe:C
transistor
Various
SOT343F
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
Type
BGA2771
BGA2776
BGA2709
BGM1012
BFG325
BFG425W
BFG520
BFG540
BFU725F/N1
BFU730F
Type
BAP50^
BAP51^
BAP63^
BAP64^
BAP70^
BAP1321^
BFU725F/N1
BFU730F
Function
Product
Package
General
purpose
medium
power
amplifier
MMIC
General
purpose
amplifier
Output
amplifier
RF bipolar
transistor
Wideband
transistor
SiGe:C
transistor
SOT89
SOT908
SOT363
SOT363
SOT363
SOT223
SOT223
SOT223
SOT143
SOT343F
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
BGM1011
BGM1013
BGM1014
BFG135
BFG 591
BFG198
BFG540
BFU725F/N1
BFU730F
Product highlight:
PIN diodes for switching matrix
In addition to delivering outstanding RF performance, this component
simplifies design-in because of its extremely low forward resistance,
diode capacitance, and series inductance. Significant board space
is saved by supplying a range of highly compact package options
including SOD523, SOD323 and leadless SOD882D.
Features
`` High isolation, low distortion, low insertion loss

`` Low forward resistance (Rd) and diode capacitance (Cd)
`` Ultra-small package options
21
1.3.5 VSAT
Application diagram
OUTDOOR UNIT
INDOOR UNIT
IF
POWER
SUPPLY
PA
IF1
MOD
BUF
DIGITAL
SIGNAL
PROCESSOR
REF
MPX
to/from
IDU
REF
MPX
PMU
PMU
LNA
IF2
SYNTH
PLL
PLL
OMT
ANTENNA
BUF
DATA
INTERFACE
IF1
DEMOD
Product
Package
IF gain block
MMIC
MMIC
General purpose
wideband
amplifiers
SOT363
IF
Function
Product
LNA
22
Package
SiGe:C transistor
SOT343F
Wideband
transistor
SOT343R
RF transistor
LNA1
brb405
Indoor unit
Function
LNA2
SOT143R
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
BGA2714
BGA2748
BGA2771
Type
BFU725F/N1
BFU710F
BFU725F/N1
BFU730F
BFG425W
BFG424W
BFG325/XR
Outdoor unit
Product
IF gain block
Package
MMIC
SOT363
IF
MMIC
Function
General purpose
wideband
amplifiers
Product
LNA2
Function
Package
RF transistor
SiGe:C transistor
MMIC
SiGe:C MMIC
Product
PLL
Function
Oscillator
RF IC
SOT891
Package
SiGe:C IC
Product
SOT616
Package
Product
RF diode
Function
Product
RF transistor
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGU7003
Type
TFF1003HN
TFF1007HN
TFF11xxxHN^
Type
BFG424W
BFG425W
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Wideband
transistor
SOT343R
SiGe:C transistor
SOT343F
Varicap diode
Package
SOD523
Type
BB202
Package
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
RF transistor
Function
Synth
Buffer
SOT343F
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
SiGe:C transistor
SOT343F
Products
by application
Function
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
TFF1003HN
The TFF1003HN is a Ku-band frequency generator intended for
low phase noise Local Oscillator (LO) circuits for Ku-band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
Features
`` Phase noise compliant with IESS-308 (Intelsat)

`` LO generator with VCO range from 12.8 GHz to 13.05 GHz
`` Input signal 50 MHz to 815 MHz
`` Divider settings 16, 32, 64, 128 or 256
23
1.4 Portable devices

1.4.1 GPS
Application diagram
external
active
antenna
LNA
BPF
SPDT
embedded
antenna
LNA
BPF
BPF
GPS
RECEIVER
IC
001aan955
Function
Product
SPDT Switch
Function
RF diode
Package
PIN diode
Product
RF transistor
various
Package
SiGe:C
transistor
SOT343F
SOT891
LNA
MMIC
SiGe:C
MMIC
SOT886
Type
BAP64^
BAP1321^
BAP51^
Type
BFU725F /N1
BFU710F
BFU730F
BGU7003
BGU7003W
BGU7004
BGU7005
BGU7007
BGU7008
^ = also available in ultra-small leadless package SOD882D.
Product highlight:
BGU7007 SiGe:C LNA MMIC for GPS, GLONASS,
and Galileo
The BGU7007 is a low noise amplifier (LNA) for GNSS receiver
applications in a plastic, leadless, 6-pin, extremely-small SOT886
package. It requires only one external matching inductor and one
external decoupling capacitor.
24
Features
`` Covers full GNSS L1 band, from 1559 to 1610 MHz

`` Noise figure (NF) = 0.85 dB
`` Gain = 18.5 dB
`` High 1 dB compression point of -12 dBm
`` High out-of-band IP3i of 4 dBm
`` Supply voltage 1.5 to 2.85 V
`` Power-down mode current consumption < 1 A
`` Optimized performance at low supply current of 4.8 mA
`` Integrated temperature stabilized bias for easy design
`` Requires only one input matching inductor and one supply
decoupling capacitor
1.4.2 FM radio
Application diagram
Products
by application
headset
antenna
LNA
SPDT
embedded
antenna
LNA
FM
RECEIVER
IC
001aan956
Function
SPDT switch
Function
Product
RF diode
Package
PIN diode
Product
various
Type
BAP64^
BAP 65^
BAP1321^
BAP51^
Package
Type
RF transistor
SiGe:C
transistor
SOT343F
BFU725F /N1
MMIC
SiGe:C
MMIC
SOT891
SOT886
BGU7003
BGU7003W
LNA
^ = also available in ultra-small leadless package SOD882D.
Product highlight:
BGU7003W MMIC wide band amplifier
The BGU7003W is a wideband amplifier in SiGe:C technology for
high-speed, low noise applications. It is housed in a plastic, leadless,
6-pin, extremely-thin, small-outline SOT886 package.
Features
`` Applicable between 40 MHz and 6 GHz

`` High ohmic FM LNA: 13 dB gain and 1.1 dB NF at 100 MHz
`` 50 FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz
`` Integrated temperature-stabilized bias for easy design
`` Bias current configurable with external resistor
`` ESD protection > 1 kV Human Body Model (HBM) on all pins
25
1.4.3 Cellular receive

Application diagram
GSM/
EDGE
GSM/EDGE FE
SWITCH
TRANSCEIVER
PA
BPF
UMTS
LTE
duplexer
001aan957
Function
LNA
Product
MMIC
SiGe:C MMIC
Package
SOT891
SOT886
Type
BGU7003
BGU7003W
Product highlight:
BGU7003 MMIC wideband amplifier
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for
high-speed, low noise applications. It is housed in a plastic leadless
6-pin extremely thin small outline SOT886 package.
26
Features
`` Applicable between 40 MHz and 6 GHz

`` LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz
`` Integrated temperature stabilized bias for easy design
`` Bias current configurable with external resistor
`` ESD protection > 1 kV Human Body Model (HBM) on all pins
1.4.4 802.11n WLAN (dual concurrent)
low pass
filter
Products
by application
Application diagram
PActrl
Tx
antenna
SPDT
switch
medium
power
amplifier
APPLICATION
CHIPSET
Rx
bandpass
filter
LNA
SPDT
bra502
Function
Medium
power
amplifier
Function
LNA
Product
MMIC
Package
Medium power
amplifier
Product
RF Transistor
MMIC
SOT89
SOT908
Package
SiGe:C
transistor
SiGe:C MMIC
SOT343F
SOT891
Type
BGA7024
BGA7027
BGA7124
BGA7127
Type
BFU725F/N1
BFU730F
BGU7003
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package. It delivers 28 dBm
output power at 1 dB gain compression and superior performance
for various narrowband-tuned application circuits at frequencies up
to 2700 MHz.
Features
`` 400 to 2700 MHz operating range

`` 13 dB small signal gain at 2 GHz
`` 3.3 / 5 V single supply operation
`` Simple quiescent current adjustment
`` 1 A shutdown mode
27
1.4.5 Generic RF front-end

Application diagram
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
filter
VCO
PA
driver
LOW
FREQUENCY
CHIP SET
VCO
bra850
Function
Product
SPDT Switch
RF diode
Bandswitch
diode
PIN diode
Function
Product
Wideband
transistor
RF bipolar
transistor
LNA
MMIC
Function
Product
RF bipolar
transistor
Driver
MMIC
SiGe:C
transistor
Package
SOD523
SOD323
various
various
Type
BA277
BA591
BAP51^
BAP1321^
Function
Package
SOT23
SOT323
SOT323
Type
PBR951
PRF957
PRF947
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGA2001
BGA2003
Function
SOT343F
SOT343R
Low noise
wideband ampl. SOT343R
Wideband
transistor
Amplifier
Gen. purpose
wideband ampl.
Package
SOT323
SOT23
SOT363
SOT363
SOT363
Mixer
Buffer
Function
Power
amplifier
Function
VCO
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Wideband
transistor
Product
MMIC
Product
Varicap
diodes
Gen. purpose
wideband
ampl.
VCO varicap
diodes
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7027
SOT89
Package
SOD523
SOD323
Type
BB198
BB156
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
^ = also available in ultra small leadless package SOD882D
Product highlight:
BFU790F silicon NPN germanium microwave transistor
Silicon NPN germanium microwave transistor for high-speed, low
noise applications in a plastic, 4-pin dual-emitter SOT343F package.
28
Features
`` Low noise, high linearity microwave transistor

`` 110 GHz fT silicon germanium technology
`` High maximum output power at 1 dB compression of 20 dBm
at 1.8 GHz
1.5 Automotive
1.5.1 Active antenna, e.g. SDARS, GPS
Products
by application
Application diagram
antenna
1st
stage
LNA
2nd
stage
LNA
filter
3rd
stage
LNA
CHIPSET
001aan958
Function
1st stage
LNA
Function
2nd stage
LNA
Function
3 rd stage
LNA
Product
MMIC
Package
Low noise wideband
amplifier
Product
MMIC
SOT343R
SOT343F
Package
SOT343F
General purpose
wideband amplifier
Product
SOT363
Package
RF transistor
SiGe:C transistor
MMIC
SiGe:C MMIC
SOT343F
SOT891
Type
BGA2001
BGA2003
BFU730F
Type
BFU690F
BGM1013
BGM1011
BGA2715
BGA2748
Type
BFU690F
BFU725F/N1
BFU790F
BGU7003
Product highlight:
BGU7003 MMIC wideband amplifier
Manufactured in NXPs latest SiGe:C process, this high frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon-based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
Features
`` Low noise, high-gain microwave MMIC

`` Maximum stable gain = 19 dB at 1.575 GHz
`` 110 GHz fT-silicon germanium technology
`` Optimized performance at low (5 mA) supply current
`` Extremely thin, leadless 6-pin SOT891 package
`` Integrated biasing and shutdown for easy integration
29
1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
Application diagram
antenna
filter
receiver
LNA
filter
mixer
LOW
FREQUENCY
CHIP SET
buffer
VCO
antenna
filter
transmitter
PA
driver
VCO
LOW
FREQUENCY
CHIP SET
bra851
Function
Product
RF bipolar
transistor
LNA
MMIC
Wideband
transistor
Low noise
SOT343R
wideband ampl.
SiGe:C MMIC
Function
Product
RF bipolar
transistor
Driver
MMIC
Function
VCO
Package
SOT23
SOT323
SOT323
SOT891
Package
Wideband
SOT323
transistor
SOT23
Amplifier
SOT363
Gen. purpose SOT363
wideband ampl. SOT363
Product
Varicap
diodes
VCO varicap
diodes
Package
SOD323
SOD323
SOD523
SOD323
Type
PBR951
PRF957
PRF947
BGA2001
BGA2002^
BGA2003
BGU7003
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Type
BB148
BB149A
BB198
BB156
Function
Mixer
Function
Buffer
Function
Power
amplifier
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Product
RF bipolar
transistor
MMIC
^ = AEC-Q101 qualified (some limitations apply)
Product highlight:
Varicap diodes as VCO
Varicap diodes are principally used as voltage varicap capacitors,
with their diode function a secondary option. These devices are ideal
for voltage controlled oscillators (VCOs) in ISM band applications.
30
Features
`` E xcellent linearity
`` E xcellent matching
`` Very low series resistance
`` High capacitance ratio
Wideband
transistor
Wideband
transistor
Amplifier
Gen. purpose
wideband
ampl.
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
SOT323
SOT23
SOT363
SOT363
SOT363
SOT908
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
BGA7124
1.5.3 Tire pressure monitoring system
Products
by application
Application diagram
antenna
filter
PA
driver
VCO
SENSOR
brb216
Function
PA
Function
Product
RF bipolar
transistor
Product
RF bipolar
transistor
Driver
MMIC
Function
VCO
Wideband
transistor
Wideband
transistor
Amplifier
Gen. purpose
wideband ampl.
Product
Varicap diodes VCO varicap diodes
Package
SOT23
SOT323
SOT23
SOT323
SOT323
Type
BFR92A
BFR92AW
BFR94A^
BFR93AW
BFR94AW^
Package
SOT323
SOT23
SOT363
SOT363
SOT363
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Package
SOD523
SOD323
Type
BB198
BB156
Product highlight:
BFR94AW silicon NPN transistor
Designed for use in RF amplifiers, mixers and oscillators with signal
frequencies up to 1 GHz, this silicon NPN transistor is housed in
a plastic SOT323 (S-mini) package.
Features
`` High power gain

`` Gold metallization ensures excellent reliability
`` SOT323 (S-mini) package
`` AEC-Q101 qualified
31
1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)

Application diagram
FM input
filter
& AGC
1st
mixer
IF
bandpass
filter
2nd
mixer
variable
BW filter
IF limiter
FM deamplifier modulator
f
AGC &
hum filter
oscillator
FM MPX
oscillator
AM LNA
DET
RF input
filter
1st
mixer
IF
bandpass
filter
2nd
mixer
IF
bandpass
filter
IF
AM deamplifier modulator
AM audio
bra501
Function
AM LNA
Product
RF transistor
Function
Product
FM input
filter & AGC
RF diode
JFET
Varicap
diode
PIN diode
Package
SOT23
Type
BF862
Package
SOT23
SOT23
SOD523
SOD323
Type
BB201^
BB207
BAP70-02
BAP70-03
Function
AGC &
hum filter
Product
Function
Product
Oscillator
RF diode
RF diode
Package
Type
PIN diode
SOT363
BAP70AM
Varicap
diode
Package
SOD323
SOD523
Type
BB156
BB208-02
^ = OIRT
Note 1:
These recommended discrete products are applicable for
NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684
6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H;
DDICE:TEA6721HL. All recommended discrete products are
applicable, excluding AM LNA in: DICE2:TEF6730HWCE.
Product highlight:
BF862 junction field effect transistor
Our tuning portfolio contains excellent products for car radio
reception applications and in-vehicle media platforms. The NXP
devices for this application ensure excellent reception quality and
ease of design-in. Performance is demonstrated in reference designs.
The high performance junction FET BG862 is specially designed for
AM radio amplifiers.
32
Note 2:
Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM
oscillator.
Features
`` High transition frequency and optimized input capacitance for

excellent sensitivity
`` High transfer admittance resulting in high gain
`` Encapsulated in the versatile and easy to use SOT23 package
1.6 Industrial, scientific & medical (ISM)

1.6.1 Broadcast / ISM (10 - 1500 MHz range)
Products
by application
Application diagram
typ. 0.5 kW
DVB-T
Driver stages
TV exciter
DVB-T
typ. 5 kW DVB-T
output power
harmonic
filter
power
monitor
8 final
amplifiers
Recommended broadcast products

Function
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
D
(%)
VDS
(V)
Package
Type
470
470
470
470
470
470
470
470
860
860
860
860
860
860
860
860
7
24
30
70
75
90
110
120
33
33
31
32
32
31
30
31
50
42
50
50
42
42
50
50
SOT467C
SOT467
SOT467
SOT539A
SOT979A
SOT1121
SOT539A
SOT539A
BLF642
BLF871(S)
BLF881(S)
BLF884P
BLF878
BLF879P
BLF888
BLF888A
Recommended ISM products

Function
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
VDS
(V)
0
0
0
0
10
1
1
1
1
1
1
10
470
10
1400
10
470
470
88
10
10
10
1000
1000
1500
1500
500
1400
1000
1000
1400
800
1500
500
860
500
1500
500
860
860
108
500
500
500
5
10
5
10
20
35
100
120
100
300
150
300
300
500
500
600
600
450
1000
500
1200
1200
50
50
32
32
50
32
42
50
32
32
32
50
50
50
50
50
50
42
50
50
50
50
Product highlight:
BLF888A LDMOS power transistor
NXPs 50 V high voltage LDMOS process enables highest power
and unequalled ruggedness. The BLF888A (VSWR > 50:1) delivers the
highest power level for digital broadcasting available to date.
Package
Type
SOT1179
SOT1179
SOT1179
SOT1179
SOT467C
SOT467C
SOT467
SOT467
SOT540A
SOT540A
SOT1120
SOT502
SOT539A
SOT1121A/B
SOT539
SOT539A
SOT539
SOT539A3
SOT539
SOT1240
SOT539A
SOT539A
BLP10H605
BLP10H610
BLP15M705
BLP15M710
BLF571
BLF642
BLF871
BLF881
BLF645
BLF647
BLF647P
BLF573(S)
BLF884P
BLF573P
BLF6G15L(S)-500H
BLF574
BLF888A(S)
BLF879P
BLF178P
BLF278XR
BLF578
BLF578XR
Features
`` Best broadband efficiency

`` Highest power devices
`` Low-thermal resistance design for reliable operation
33
1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee

Application diagram
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
filter
VCO
MPA
driver
E-METERING
CHIP SET
VCO
bra850
Function
Product
SPDT Switch
RF diode
Bandswitch
diode
PIN diode
Function
Product
RF transistor
SiGe:C transistor
Package
SOD523
SOD323
various
various
Type
BA277
BA591
BAP51^
BAP1321^
Function
Package
Function
SOT343R
SOT343R
SOT891
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGA2001
BGA2003
BGU7003
Package
Type
SOT343
BFG425W
SOT363
SOT363
SOT363
BGA2031/1
BGA2771
BGA2776
SOT343F
LNA
MMIC
Function
Product
RF bipolar
transistor
Driver
MMIC
Low noise
wideband ampl.
SiGe:C MMIC
Wideband
transistor
Amplifier
Gen. purpose
wideband ampl.
Mixer
Buffer
Function
Medium power
amplifier
Function
VCO
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Wideband
transistor
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Product
Varicap
diodes
Gen. purpose
wideband
ampl.
VCO varicap
diodes
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
Type
SOT343
BFG21W
SOT908
SOT908
BGA6289
BGA6489
BGA6589
BGA7124
BGA7127
Package
SOD523
SOD323
Type
BB198
BB156
SOT89
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost, ultra small SOT908 leadless package. It delivers 27 dBm
output power at 1 dB gain compression and superior performance for
various narrowband-tuned application circuits at frequencies up to
2700 MHz.
34
Features
`` Operating range: 400 to 2700 MHz

`` 16 dB small signal gain at 2 GHz
`` 3.3 / 5 V single supply operation
`` Simple quiescent current adjustment
`` 1 A shutdown mode
1.6.3 RF Microwave furnace application

Application diagram
oscillator
MPA
Products
by application
antenna
HPA
isolator
CONTROLLER
brb418
Function
Product
Package
SOT343R
RF transistor
Oscillator
SOT343F
Function
Product
Driver
HPA
Final
Function
Product
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package
Type
1
1
1
2400
2400
2400
2400
2400
2400
2500
2500
2500
2500
2500
2500
2500
2500
2500
4
10
12
20
140
180
200
250
250
SOT1179
SOT1179
SOT975B
SOT1138
SOT1179
SOT539
SOT502
SOT539
SOT1179
BLP25M74
BLP25M710
BLF25M612
BLM2425M720
BLP2425M8140
BLF2425M6L(S)180P
BLF2425M7L(S)200
BLF2425M7L(S)250P
BLP2425M8250P
Package
SOT89
MPA
(medium
power
amplifier)
MMIC
Type
BFG410W
BFG424W
BFG425W
BFG424F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
SOT908
SOT89
SOT908
SOT89
SOT908
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
Product highlight:
New family for ISM 2.45 GHz
NXP's 6th and 7th generation LDMOS technology, along with advanced
packaging concepts, enables power amplifiers that deliver best-in-class
performance at 2.45 GHz. The unsurpassed ruggedness and low thermal
resistance, along with the intrinsic efficiency of the LDMOS process,
make these transistors ideally suited for the furnace application.
Features
`` Excellent ruggedness
`` Low thermal resistance design for unrivalled reliability
`` Ease of design
35
1.6.4 RF plasma lighting

Looking for more information on RF plasma lighting?
See chapter 2.5.2 RF-driven plasma lighting: The next revolution in light
sources are powered by solid-state RF technology
Application diagram
RF (plasma) bulb
oscillator
MPA
HPA
CONTROLLER
brb436
Function
Product
RF transistor
Oscillator
Function
Product
Package
SOT143
SOT143
SOT23
SOT323
SOT323
SOT323
SOT343
SOT343
SOT363
SOT416
Type
BFG520
BFG325/XR
BFR520
BFR92AW
BFR93AW
BFS520
BFG520W
BFG325W/XR
BFM520
BFR520T
Package
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
SOT89
MPA
(medium
power
amplifier)
SOT908
SOT89
SOT908
SOT89
SOT908
MMIC
Function
Product
Driver
Final
Driver
HPA
Final
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package
Type
10
10
10
10
10
10
10
10
10
10
10
10
2400
2400
2400
2400
2400
500
500
500
500
500
500
1000
1000
1000
1000
2500
2500
2500
2500
2500
2500
2500
20
300
500
500
1000
1000
10
100
120
300
4
12
140
180
200
250
250
SOT467C
SOT502A
SOT539A
SOT1240
SOT539A
SOT539A
SOT1179
SOT467C
SOT1138
SOT1138
SOT1179
SOT975B
SOT1179
SOT502
SOT502
SOT539
SOT1179
BLF571
BLF573(S)
BLF574
BLF278XR
BLF578
BLF578XR
BLP10H610
BLF871(S)
BLP10H6120
BLP10H6300P
BLP25M74
BLF25M612
BLP2425M8140
BLF2425M7L(S)180
BLF2425M7L(S)200
BLF2425M7L(S)250P
BLP2425M8250P
Product highlight:
LDMOS enables RF lighting
NXP's 50 V high voltage LDMOS process enables highest power
at the unprecedented ruggedness levels necessary for this kind of
application.
BLF578: 1000 W CW operation - highest power LDMOS
36
Features
`` Highest power device

`` Unprecedented ruggedness
`` Low-thermal resistance design for reliable operation
`` Broadband device for flexible use
1.6.5 Medical imaging

Looking for more information on medical applications?
See chapter 2.5.1 Medical applications driven by RF power: From imaging
to cancer treatment, a flexible and versatile technology in the doctors toolbox
Products
by application
Application diagram
Magnet
X GRADIENT
AMPLIFIER
Gradient coils
RF coils
Y GRADIENT
AMPLIFIER
WAVEFORM
GENERATOR
Z GRADIENT
AMPLIFIER
RF amplifier
RF
ELECTRONICS
ADC
COMPUTER
IMAGE
DISPLAY
brb434
Function
Product
Driver
Final
Driver
HPA
Final
Driver
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package
Type
10
10
10
10
10
10
10
10
10
10
10
10
2400
2400
2400
2400
2400
500
500
500
500
500
500
1000
1000
1000
1000
2500
2500
2500
2500
2500
2500
2500
20
300
500
500
1000
1000
10
100
120
300
4
12
140
180
200
250
250
SOT467C
SOT502A
SOT539A
SOT1240
SOT539A
SOT539A
SOT1179
SOT467C
SOT1138
SOT1138
SOT1179
SOT975B
SOT1179
SOT502
SOT502
SOT539
SOT1179
BLF571
BLF573(S)
BLF574
BLF278XR
BLF578
BLF578XR
BLP10H610
BLF871(S)
BLP10H6120
BLP10H6300P
BLP25M74
BLF25M612
BLP2425M8140
BLF2425M7L(S)180
BLF2425M7L(S)200
BLF2425M7L(S)250P
BLP2425M8250P
Product highlight:
LDMOS in emerging medical applications
NXPs line of 50 V high voltage LDMOS devices enables highest
power output and features unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable compact amplifier design.
Features
`` Best broadband efficiency

`` Highest power (density) devices
37
1.7 Aerospace and defense

1.7.1 Microwave products for avionics, L- and S-band radar applications
Application diagram
RF signals
video, timing, bias voltage,

control and data
I-f signals
RF small signal
RF POWER BOARD
RF power
PLL VCO
MPA
mixer
HPA
ISOLATOR
ANTENNA
DRIVE
VGA
local oscillator
duplexer
DISPLAY
AND
CONTROL
local oscillator signal
WAVEFORM
GENERATOR
PLL VCO
control and timing

video
mixer
DETECTOR
LNA
IF amplifier
brb410
Function
Product
Driver
Final
Driver
Final
HPA
Driver
Final
38
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package
Applications
Type
1030
1030
1030
1030
960
1030
960
1030
960
500
1200
500
1200
1200
1200
2700
3100
2700
2900
2700
3100
2700
2900
2900
2700
3100
2900
2700
1090
1090
1090
1090
1215
1090
1215
1090
1215
1400
1400
1400
1400
1400
1400
3100
3500
3500
3300
3100
3500
3100
3300
3300
2900
3500
3300
3100
2
10
200
200
250
300
500
600
1000
25
35
130
250
250
500
6
20
30
100
120
120
130
130
150
350
350
200
200
SOT538A
SOT467C
SOT502A
SOT502A
SOT502A
SOT957A
SOT634A
SOT539A
SOT539A3
SOT467C
SOT467C
SOT1135
SOT502A
SOT502
SOT539A
SOT975C
SOT608
SOT1135
SOT502A
SOT502
SOT502
SOT922-1
SOT922-1
SOT922-1
SOT539
SOT539
pallet
pallet
Avionics
Avionics
Avionics
Avionics
Avionics
Avionics
Avionics
Avionics
Avionics
L-band
L-band
L-band
L-band
L-band
L-band
S-band
S-band
S-band
S-band
S-band
S-band
S-band
S-band
S-band
S-band
S-band
S-band
S-band
BLA1011-2
BLA1011-10
BLA6G1011-200R
BLA6G1011LS-200RG
BLA0912-250R
BLA1011-300
BLA6H0912-500
BLA6H1011-600
BLA6H0912-1000
BLL6H0514-25
BLL1214-35
BLL6H0514L(S)-130
BLL6G1214L-250
BLL6H1214L(S)-250
BLL6H1214-500
BLS6G2731-6G
BLS6G3135(S)-20
BLS6G2735L(S)-30
BLS2933-100
BLS6G2731(S)-120
BLS6G3135(S)-120
BLS6G2731S-130
BLS6G2933S-130
BLS7G2933S-150
BLS7G2729L(S)-350P
BLS7G3135L(S)-350P
BLS6G2933P-200
BLS6G2731P-200
Function
Discrete attenuator
Product
RF diode
PIN diode
Package
Type
Various^
BAP64
Function
LNA (low noise
amplifier) & Mixer
Function
Product
RF transistor
SiGe:C transistor
Product
Package
Type
SOT343F
BFU710F
BFU725F/N1
BFU730F
Package
Type
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
MMIC
IF amplifier
MMIC
General purpose
wideband
amplifiers
Function
PLL/VCO
LO generator
Product
RF IC
Function
Single VGA (variable
gain amplifier)
Product
Function
Dual VGA (variable
gain amplifier)
Product
Function
Product
MPA
(medium power
amplifier)
MMIC
MMIC
MMIC
SiGe:C IC
Gain range
23 dB
31 dB
Package
Type
SOT616
TFF1003HN
TFF1007HN
TFF11xxxHN^
Package
SOT617
Gain range
24 dB
28 dB
Package
PL (1 dB) @ 940 MHz

21 dBm
25 dBm
24 dBm
28 dBm
28 dBm
30 dBm
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
SOT617
Products
by application
^ = SOD523, SOD323, SOT23 & SOT323
Type
BGA7202
BGA7204
Type
BGA7350
BGA7351
Type
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
NXP launches high quality pallets for S-band
The BLS6G2933P-200 is the first LDMOS-based, industry-standard
pallet available on the market. This pallet offers more than 40%
efficiency, includes the complete bias network and can be used
as direct replacement for current solutions.
Features
`` P1 dB > 200 W
`` Efficiency > 40%
`` Industry-standard footprint
`` 50 in/out matched for entire bandwidth
`` Lightweight heat sink included
39
2. Focus applications, products & technologies

2.1 Wireless communication infrastructure
2.1.1
VGAs with superior linearity for enhanced system performance
NXP variable gain amplifiers BGA7202/4, BGA7350/1

Manufactured in NXPs innovative QUBiC4 process, these VGAs deliver more on-chip functionality
in less space, and meet the most demanding requirements for system performance.
Key features
`` BGA720x: transmit VGAs
- Frequency band: 700 to 2200 or 2750 MHz
- Gain range: 23 or 31.5 dB
- OIP3: +36 dBm/110 mA (BGA7202), +41 dBm/520 mA
(BGA7204) @ minimum attenuation
`` BGA735x: dual receive IF VGAs
- Frequency band: 50 to 250 MHz
- Gain range: 24 or 28 dB
- OIP3: +44 dBm/245 mA or higher @ minimum attenuation
- Gain flatness: 0.1 dB
- Differential phase error: 0.1 degrees
`` Best-in-class linearity (OIP3) at low power consumption
`` ESD protection > 2 kV HBM and > 1.5 kV CDM on all pins
`` HVQFN32 leadless packages (5 x 5 mm)
The BGA7202 and BGA7204 are RF VGAs used in the transmit

path. The BGA7202 offers an output third-order intercept
(OIP3) of +45 dBm and 27 dB of attenuation. The attenuation is
controlled by means of an analog interface.
Key applications
`` Wireless infrastructure base stations
`` Multi-carrier systems
The BGA7350 has a gain range of 24 dB, while the BGA7351

has a range of 28 dB. For both devices, the maximum
gain setting delivers 18 dBm output power at 1 dB gain
compression (P1dB), with superior linear performance and
overdrive performance up to +20 dBm. For gain control, each
amplifier uses a separate digital gain-control code, which is
provided externally through two sets of five bits. The resulting
gain flatness is 0.1 dB.
These high performance variable gain amplifiers (VGAs)

support multiple frequency bands and the latest air interfaces.
They offer best-in-class linearity, very low power consumption,
high immunity to out-of-band signals, spurious performance,
and output power. They are ideally suited for GSM, W-CDMA,
WiMAX, LTE base-station infrastructure, and multi-carrier
systems.
40
The BGA7204 provides an OIP3 of +37 dBm and 32 dB of

attenuation. The attenuation is controlled by means of a digital
interface. In addition, the gain curve of the BGA7204 can be
programmed via an SPI interface.
The BGA7350 and BGA7351 are dual, independently
controlled receive IF VGAs that operate from 50 to 250 MHz.
Integrated matching improves performance in the receiver
chain, because the VGA can drive the filter directly into the
analog-to-digital converter to ensure a constant input level.
Other features
All four devices are RoHS-compatible and available in
space-saving HVQFN32 leadless packages that measure just
5 x 5 mm. They are unconditionally stable devices that offer
ESD protection at all pins and meet moisture sensitivity level 1.
Complete signal chain

NXP is one of the very few companies that supplies products
for the complete signal chain from analog mixed-signal
components such as ADCs and DACs to RF small signal
devices and high-power RF amplifiers. This system-level
approach allows engineers to purchase products that work
well together as part of the overall system design, and makes
it easier for designers to optimize performance in today's
wireless infrastructure.
Furthermore, since NXP has in-house access to all the core IP,
the company is positioned to support even higher levels of
integration in the future.
Selection guide
Gain
Vsup
Isup
Frequency
(MHz)
Type
Package
Control interface
(V)
(mA)
BGA7202
SOT617
Analog
530
BGA7204
SOT617
Parallel, serial, digital
110
range
@ minimum attenuation
@ maximum attenuation
Gain
OIP3
NF
Gain
OIP3
NF
(dB)
(dB)
(dBm)
(dB)
(dB)
(dBm)
(dB)
700 to 1450
23
23
41
30
30
1450 to 2200
23
23
41
30
30
700 to 1450
31.5
18
38
6.5
-13.5
10
38
1450 to 2100
30.5
17
36
6.5
-13.5
10
38
2100 to 2750
29.5
16
34
7.5
-13.5
10
38
BGA7350
SOT617
Parallel, digital
245
50 to 250
24
18.5
44
-5.5
50
30
BGA7351
SOT618
Parallel, digital
250
50 to 250
28
22
45
-6
50
34
41
Focus applications,
products & technologies
State-of-the-art QUBiC4
NXPs industry-leading QUBiC4 technology, available since
2002, has been widely deployed in the field and offers
more consistent parameter performance compared to
GaAs technology. It speeds the migration from GaAs to
silicon and delivers more functionality in less space. High
integration reduces the design footprint and enables more
cost competitive designs. It also improves reliability and offers
significant savings in manufacturing expenditures.
2.1.2
Doherty amplifier technology for state-of-the-art wireless infrastructure
Best-in-class PA designs enable considerable energy savings

NXPs latest power amplifier designs let the wireless infrastructure run with significantly higher energy
efficiency towards Green Base Stations. In order to achieve the highest efficiencies currently possible,
NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high
performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates
power amplifiers that offer high efficiency, high gain, are easily linearizable, and are more cost-effective to
operate.
Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant
mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-toaverage ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals
makes the high power and added efficiency of the Doherty approach the preferred option for most service
providers.
NXPs Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two
transistors combined. The input and output sections are internally matched, benefiting the amplifiers with
high gain, good gain flatness, and phase linearity over a wide frequency band.
Integrated Doherty
NXP can even offer the worlds first fully integrated Doherty
designs. From the outside these devices look like ordinary
transistors. In fact, they are completely integrated Doherty
amplifiers that readily deliver the associated high efficiency
levels for base station applications. With the ease of design-in
of an ordinary Class AB transistor, they also provide significant
space and cost savings.
42
Key features & benefits

`` Contains splitter, main and peak amplifier, delay lines,
and combiner in one package
- 40% efficiency @ 10 W average power
- no additional tuning in manufacturing
`` Design is as easy as with a single Class AB transistor
`` Ideally suited for space-constrained applications
(e.g. remote radio heads, antenna arrays)
`` Currently available for TD-SCDMA (BLD6G21L(S)-50) and
W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details

`` Most efficient Doherty amplifier designs available to date
`` Production-proven, consistent designs
`` NXPs LDMOS provides unsurpassed ruggedness
`` Currently available for the following frequency bands:
- 728 to 821 MHz
- 869 to 960 MHz
- 1805 to 1880 MHz (DCS)
- 1930 to 1990 MHz (PCS)
- 1880 to 2025 MHz (TD-SCDMA)
- 2110 to 2170 MHz (UMTS / LTE)
- 2300 to 2400 MHz (WiBRO / LTE)
- 2500 to 2700 MHz (WiMAX / LTE)
- 3300 to 3800 MHz (WiMAX)
Focus applications,
Discrete Doherty amplifiers

In addition to the integrated versions, NXP offers product
demonstrators for very efficient, high-power, discrete two- and
three-way Doherty amplifiers. The two-way designs, based on
the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43%
efficiency and 15.7 dB gain for W-CDMA applications.
All of our product demonstrators are supported by

comprehensive documentation and hardware.
Please see chapter 3.7.1.7 for a complete list of available
designs.
Our flagship three-way Doherty demonstrator even achieves
48% efficiency at 48 dBm (63 W) average output power and
15.0 dB gain with a two-carrier W-CDMA signal. The current
design covers the W-CDMA standard for band 1 operation
and is tailored towards high-yield, minimum-tuning, volume
manufacturing.
Featured Doherty designs

Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type
Main transistor
Peak transistor
728-768
58
50
32
20.5
47
SYM
BLF6G10LS-200RN
BLF6G10LS-200RN
920-960
57.3
49.3
30
16
50
ASYM
BLF8G10LS-160
BLF7G10LS-250
1476-1511
58.1
49.6
28
16
42
ASYM
BLF7G15LS-200
BLF7G15LS-300P
1805-1880
58.6
51
28
16
47.6
3-WAY
BLF7G20LS-200
2x BLF7G20LS-200
1930-1990
58.2
50
28
16
40
SYM
BLF7G20LS-250P
BLF7G20LS-250P
2110-2170
47
39
28
13
38
SYM
BLD6G22L(S)-50
BLD6G22L(S)-50
2110-2170
57.2
49.2
28
16
47
3-WAY
BLF7G22LS-160
2x BLF7G22L(S)-160
2300-2400
55
47.5
28
15.2
44
ASYM
BLF7G24LS-100
BLF7G24LS-140
2500-2700
50.3
42.3
28
14.5
39
SYM
1/2 BLF7G27LS-90P
1/2 BLF7G27LS-90P
3400-3600
51
43
28
11.5
32
SYM
BLF6G38-50
BLF6G38-50
43
2.1.3
The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8
NXP recently announced the 8th generation of its renowned RF power device portfolio for base stations.
Listening carefully to the worlds leading infrastructure providers and understanding their requirements, a
holistic approach was taken during the development of Gen8. This basically means that we scrutinized every
little detail of a power transistor and reconsidered the entire transistor system to come up with a new
generation, which performs markedly better than its predecessors and again sets standards for the industry.
Gen8 clearly addresses the key trends in the wireless
infrastructure industry
`` Increasing signal bandwidths up to 100 MHz
`` Cost sensitivity
`` Reduction in the size/weight/volume of the cabinet
`` Continuous need for greater electrical efficiency to reduce
cooling requirements and operational expenditure
`` Ever increasing output power to unprecedented levels
`` Need to deploy multi-standard and future-proof solutions
Gen8 is the answer to all these often conflicting requirements.
The package and die design, as well as input and output
match structures, have been optimized to enable wideband,
affordable, compact, multi-standard and highly efficient
Doherty power amplifiers.
The first wave of Gen8 transistors is deployed for applications
up to 960 MHz with excellent linearization capabilities, stateof-the-art ruggedness and efficiencies in excess of 55% for
multicarrier GSM PAs. The second wave of products covers
WCDMA-LTE applications at 2.1 GHz. Solutions for all other
cellular frequency bands are currently being developed.
The first wave of Gen8 transistors

Function
Type
BLF8G10L-160
HPA
44
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package
Planned
release
700
1000
160
SOT502A
Q311
Gen8 ceramic LDMOS transistor for GSM & LTE applications
Q112
Gen8 ceramic push-pull LDMOS transistor for GSM & LTE

applications
SOT539A
Description
BLF8G10L-300P
700
1000
300
BLF8G10L-320
700
1000
320
SOT502A
Q112
BLF8G10L-80
700
1000
80
SOT502A3
Q411
BLF8G10LS-160
700
1000
160
SOT502B3
Q311
BLF8G10LS-300P
700
1000
300
SOT539B
Q112
Gen8 ceramic push-pull LDMOS transistor for GSM & LTE

applications
BLF8G10LS-320
700
1000
320
SOT502B3
Q112
BLF8G10LS-80
700
1000
80
SOT502B
Q411
2.2 Broadband communication infrastructure

2.2.1
Connecting people, protecting your network: NXP's CATV C-family for the Chinese
SARFT standard
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers you
a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of
Chinas "Connecting every village" program and powerful enough for upgrading major cities from analog to
Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range.
Products
`` BGY588C, BGE788C and CGY888C push-pull amplifiers
`` BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi
and CGD987HCi power doublers
`` BGO807C, BGO807CE optical receivers
Benefits
`` Compliant with Chinese SARFT HFC networks standard
`` Transparent cap allows confirmation of product authenticity
`` Highest by Design internal ESD protection
Features
`` Excellent linearity, stability and reliability
`` High power gain
`` Silicon nitride passivity
`` GaAs HFET dies for high end devices
The BGY588C, BGE788C and BGD712C devices cover

the frequency range from 550 MHz to 750 MHz. Extending
the C-family portfolio into the high-end segment,
the CGD944C, CGD942C, CGY888C and BGO807C operate
between 40 MHz and 870 MHz and have been specifically
tested under Chinese raster conditions. Manufactured using
our GaAs HFET die process, the CGD942C and CGD944C are
high-gain, high-performance 870 MHz power doublers. The
CGD982HCi, CGD985HCi and CGD987HCi operate from
40 MHz to 1003 MHz and are specified for 870 MHz and 1
GHz. These power doublers are optimized for the Chinese
SARFT standard. They are capable of satisfying the demanding
requirements of top-end applications including high-power
optical nodes.
Our GaAs HFET MMIC dies are providing by design
the best ESD protection levels with no needs for the external
TVS components normally used with GaAs pHEMT devices.
Further extending our high quality CATV portfolio, this new

family lets you address an even wider range of
HFC applications. Dedicated solutions for the implementation
of CATV systems in China, our C-type devices deliver the
performance you need for modern TV infrastructures.
All CATV C-type devices feature a transparent cap that makes

it easy to distinguish them from counterfeit products.
C-family application information

NXP C-family by application
Application
BGY588C
BGE788C
CGY888C
BGD712C
BGO807C
CGD942C
BGO807CE
CGD944C
CGD982HCi
CGD985HCi
CGD987HCi
Optical node
Ordinary optical receiver
Distribution amplifier
Line extender amplifier
Terminating amplifier
45
Focus applications,
high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio,
BGY588C, BGE788C and CGY888C

The last stage of an HFC network structure is called
IN
port
a terminating amplifier or user amplifier as it is close to

the subscribers. Each terminating amplifier requires a single
PAD
OUT
port
EQ
BGY588C
BGE788C
CGY888C
module such as BGY588C for 550 MHz, BGE788C for 750 MHz
and CGY888C for 870 MHz systems. These modules are fitting
bra820
perfectly in the Chinese "Connecting to Every Village" projects.
BGD712C
The BGD712C is a 750 MHz, 18 dB power doubler module.
It has been designed for 750 MHz optical nodes including
IN
port
PAD
BGY785A
BGY787
ordinary or optical receivers and distribution amplifiers.

It can also be used in line extender amplifiers together with
OUT
port
EQ
BGD712C
bra821
a 750 MHz push-pull module, such as BGY785A or BGY787.

As such it can be used widely in Chinese "Connecting to
Every Village" projects.
CGD944C and CGD942C

Our full GaAs power doublers modules, CGD942C and
CGD944C offer high output power and better CTB and
CSO than other modules. Designed for high-end HFC
networks containing optical nodes with multiple out-ports,
these modules enable each port to directly cover at least
125 subscribers. These two devices are ideal when used in
upgrading HFC networks to 870 MHz.
CGD94xC / CGD98xHCi
PAD
CGD94xC / CGD98xHCi
PAD
BGO807C
The BGO807C is an integrated optical receiver module
that provides high output levels and includes an integrated
temperature compensated circuitry. In your optical node
design, BGO807C enables a high performance / price ratio
and ruggedness. When upgrading an HFC network from
analog to digital, our BGO807C is the perfect fit.
EQ
PAD
BGO807C
BGO807CE
CGD982HCi, CGD985HCi and CGD987HCi

Our newest GaAs power doubler modules, CGD982HCi,
CGD985HCi and CGD987HCi are customized designs for
CATV hybrid fiber coax Chinese networks operating in the
40 MHz to 1003 MHz bandwidth, and specified with the
Chinese cable TV network official loading raster on top of the
NTSC loading traditional rasters. For use in optical notes for
fiber deep applications where the output power level needs
to be at its highest.
OUT
port 1
H
L
(N + 1)
OUT
port 2
H
L
CGD94xC / CGD98xHCi
PAD
RF switch
OUT
port 3
H
L
CGD94xC / CGD98xHCi
PAD
BGO807C
BGO807CE
OUT
port 4
H
L
bra822
BGD812
PAD
PAD
BGO807C
BGO807CE
EQ
BGY885A
H
L
OUT
port 1
H
L
OUT
port 2
BGD812
PAD
bra823
46
Connecting people, protecting your network

NXP CATV C-family for the Chinese SARFT standard
Push-pull amplifiers
BGY588C
Power gain (dB)
BGE788C
CGY888C
typ.
34.5
34.2
35.5
Slope cable equivalent (dB)
range
0.2 - 1.7
0.3 - 2.3
1.5 typ.
Composite triple beat (dB)
max.
-57
-49
-68 typ.
Composite 2nd order distortion (dB)
max.
-62
-52
-66 typ.
Noise (@ f max) (dB)
max.
4 typ.
Total current consumption (mA)
typ.
325
305
280
range
40 - 550
40 - 750
40 - 870
Frequency range (MHz)
Focus applications,
Parameters
Power doublers
Parameters
BGD712C
Power gain (dB)
CGD942C
CGD944C
CGD982HCi
CGD985HCi
CGD987HCi
typ.
18.5
23
25
23
24.5
27
range
0.5 - 1.5
1-2
1-2
0.5 - 2
0.5 - 2
0.7 - 2
max.
-62
-66 typ.
-66 typ.
-66
-66
-66
Composite 2 order distortion (dB)
max.
-63
-66 typ.
-66 typ.
-69
-69
-66
max.
5.5
5.5
5.5
typ.
395
450
450
440
440
440
range
40 - 750
40 - 870
40 - 870
40 - 1003
40 - 1003
40 - 1003
BGO807C
BGO807CE
min.
800
800
nd
Optical receiver
Parameters
Responsivity (Rmin)
range
0-2
0-2
max.
-71
-69
typ.
-54
-53
max.
8.5
8.5
typ.
190
190
range
40 - 870
40 - 870

Connector
- / SC0 / FC0
47
2.2.2
Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks
NXP high gain power doublers CGD104xHi and push-pulls CGY104x

Designed for 1 GHz sustainable networks, these high performance GaAs devices enable
extended bandwidth and higher data rates. They deliver increased network capacity and make way for highend services like HDTV, VoIP, and digital simulcasting.
New CATV GaAs platform lay-out
Key features
`` Excellent linearity, stability, and reliability
`` High power gain for power doublers
`` Dark Green products
`` GaAs HFET dies for high-end applications
`` Superior levels of ESD protection
`` Integrated ringwave protection
`` Design optimized for digital channel loading
`` Temperature compensated gain response
`` Optimized heat management
`` Excellent temperature resistance
Key benefits
`` Simple upgrade to 1-GHz capable networks
`` Low total cost of ownership
`` High power-stress capability
`` Highly automated assembly
Key applications
`` Hybrid Fiber Coax (HFC) applications
`` Line extenders
`` Trunk amplifiers
`` Fiber deep-optical-node (N+0/1/2)
`` Bridgers
48
The NXP power doublers CGD104xH and CGD104xHi are ideal

for use in line extenders and trunk amplifiers. They support
fiber deep-optical-node applications (N+0/1/2), delivering
the highest output power on the market today. The GaAs HFET
die process delivers high gain, excellent CTB and CSO ratings,
along with lower current.
The new NXP CGY1047x push-pull family is the first line-up on
the market combining very low noise, best-in-class distortion
parameters, and low, carbon footprint capabilities. It delivers
the best performance for the lowest power consumption,
so it reduces OPEX and CO2 emissions
All of NXPs 1 GHz solutions are designed for durability and
offer superior ruggedness, an extended temperature range,
high power overstress capabilities, and extremely high ESD
levels. As a result, they also reduce the cost of ownership.
The GaAs die is inserted in an HVQFN package that is then
mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the modules
high performance stable over a wide range of temperature.
Assembly is fully automated and requires almost no human
intervention, so repeatability remains very high.
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power

doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power
gain with 60 dBmV output power and excellent ESD protection,
for the ultimate in high quality, distortionless devices.
Quick reference data CATV 1 GHz power doublers and push-pulls

CATV 1-GHz power doublers
CGD1040Hi
CGD1042H
21
23
CGD1042Hi
CGD1044H
23
Power gain (dB)
typ.
typ.
1.5
1.5
1.5
typ.
-69
-69
-69
CGD1044Hi
25
CGD1046Hi
25
27
1.5
0.5 - 2.0
-69
-69
-73
Composite 2 order distortion (dB)
typ.
-68
-68
-68
-68
-68
-68
Noise (@fmax) (dB)
max
typ.
range
nd
440
450
440
450
440
460
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
CGY1041
CGY1043
CGY1047
CGY1049
CGY1032
Focus applications,
Parameters
CATV 1-GHz push-pulls

Parameters
Power gain (dB)
typ.
22
24
28
30
33
typ.
1.6
1.8
typ.
-62
-62
-64
-62
-62
typ.
-64
-64
-66
-64
-64
Noise (@fmax) (dB)
max.
4.5
typ.
250
250
250
250
265
range
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
CGD104xHi
PAD
H
L
OUT
port 1
H
L
OUT
port 2
H
L
OUT
port 3
H
L
OUT
port 4
CGD104xHi
PAD
PAD
(N + 1)
RF switch
EQ
CGD104xHi
PAD
CGD104xHi
PAD
bra822
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
49
2.3 TV and satellite

2.3.1
LNAs for TV/STB tuners with programmable gain
NXP LNAs for STBs BGU703x for 5 V and BGU704x for 3.3 V supply voltage
This family of 5 V and 3.3 V wideband, low noise amplifiers is specifically designed for high linearity,
low noise performance for TV, DVR/PVR, set-top box tuner applications from 40 MHz to 1 GHz. The unique is
programmable gain compensates for tuner switch signal loss, which is becoming more important following
the trend of more tuners in one system, and improves overall system performance with 7-10 dB.
Key features
`` Equipped with internal bias
`` Programmable gain and bypass modes
`` Flat gain between 40 MHz and 1 GHz
`` Noise figure = 4 dB
`` High linearity: IP3O = 29 dBm
`` 75 input and output impedance
`` Power-down during bypass mode
(current consumption < 5 mA)
`` ESD protection > 2 kV human body model (HBM) on
all pins
Key applications
`` Terrestrial and cable STBs
`` Silicon and can tuners
`` Personal and digital video recorders (PVRs, DVRs)
`` Home networking and in-house signal distribution
`` FM radios
`` Antenna amplifiers
In set-top boxes that use multiple or network-interfaced module
(NIM) tuners, the RF signal usually needs to be distributed
or split. Very often, a low noise amplifier (LNA) is used to
compensate for signal loss when the signal is split with a balun
core.
The NXP BGU703x/BGU704x are LNA MMICs produced in
an SiGe:C process. All five products in the series are matched
to 75 at both the input and the output, for easier use. The
BGU703x are suitable for supply voltages of 5 Volts and the
BGU704x for 3.3 Volts. The BGU7031 and BGU7041 are LNAs
with fixed gain. The BGU7032 and BGU7042 have an additional
bypass mode. The BGU7033 has two gain levels (GP = 10 dB
or 5 dB) and the bypass mode.
50
All five devices are designed for high linearity and low noise
over a frequency range of 40 MHz to 1 GHz. They can be used
in conventional can tuners or with silicon tuner ICs. Compared
to GaAs solutions, they are less susceptible to ESD and offer a
cost savings of more than 50 percent.
Integrated biasing and switching functions reduce the number
of external components from roughly 17 to just two or three.
By comparison, a discrete LNA design would typically require six
to nine external components and, to realize the bypass function,
would need an extra four pin diodes and at least
eight additional passive components.
Each MMIC in the BGU703x/BGU704x are housed in a 6-pin
SOT363 (SMD) package. Each offers a flat gain between
40 MHz and 1 GHz, so theres no gain fluctuation over the
typical frequency range. The low noise figure of 4 dB reduces
overall tuner noise, and the high linearity (IP3O = 29 dBm)
minimizes distortion. The input and output impedance is
adapted to the application (75 ), so theres no need for
external matching.
To save power, the ICs can be powered-down during bypass
mode, for a total current consumption of less than 5 mA.
Also, to protect the LNA from external electrical discharge
in its function as the tuner input, every pin is equipped with
ESD protection of >2 kV human body model (HBM).
LNAs for set-up boxes (75 )

Package
Gain (1)
NF
PL (1dB)
OIP3
FL (2)
RLout
RLin
(mA)
(dB)
(dB)
(dBm)
(dBm)
(dB)
(dB)
(dB)
43
10
4.5
14
29
-0.2
12
18
43
29
-0.2
12
17
Bypass
-2
2.5
29
-0.2
GP 10 dB
43
10
4.5
14
29
-0.2
12
18
Bypass
-2
2.5
29
-0.2
GP 10 dB
43
10
4.5
14
29
-0.2
12
18
GP 10 dB
3.3
38
10
12
29
-0.2
12
21
Bypass
3.3
-2
2.5
29
-0.2
10
10
GP 10 dB
3.3
38
10
12
29
-0.2
12
21
Mode
VCC
ICC
(V)
GP 10 dB
GP 5 dB
(MHz)
BGU7033
BGU7032
SOT363
SOT363
40 - 1000
40 - 1000
BGU7031
SOT363
40 - 1000
BGU7042
SOT363
40 - 1000
BGU7041
SOT363
40 - 1000
Focus applications,
Type
Frequency
range
Notes:
(1) Gain = Programmable gain (GP)
(2) Flatness of frequency response = FL
Block diagram of active splitter with passive loop-through
RF input
BGU703x/BGU704x
VGA
surge
CONVENTIONAL
TUNER OR
SILICON TUNER
RF SW
BF1108 or BF1118
brb403
RF output
WB LNA
BGU7031/BGU7041 (optional)
51
2.3.2
Complete satellite portfolio for all LNB architectures
NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx

Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest
additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXPs
groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology.
Fully integrated Ku-band downconverters TFF101xHN
The TFF101xHN is a family of fully integrated downconverters
for Ku-band LNBs. They give the best RF performance in terms
of phase noise, gain, and noise figure at the lowest current
consumption in the market.
Ku-band downconverter TFF101xHN/N1 for LNB
`` Typical application: Universal Single LNB & Twin LNB
`` Ultra-low current consumption: 54 mA over PVT
`` Only 7 external components
`` No inductors
`` Single supply domain: 5 V
`` Uses low-cost fundamental 25 MHz crystal
`` High PL1dBo = 3 dBm / 3OIPo = 13 dBm
`` Best-in-class PN < 1.8 deg RMS
- 10 kHz to 13 MHz integration bandwidth
`` Multiple gain types available
- TFF1014HN/N1 36 dB
`` Flat gain over frequency (< 2 dBpp)
`` Input & output matched 50
`` Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
RF transistors BFU710F/730F
The BFU710F and BFU730F are wideband RF transistors that can
be used as an LNA or as a mixer for a DBS LNB in the Ku-band.
In either application, they deliver good noise and linearity, a
higher gain at a lower current consumption compared to their
GaAs pHEMT equivalents, and the cost advantage of silicon.
BFU710F as LNA in Ku-band LNB
`` Typical application: LNA2 for single output LNB
`` Overall similar RF performance to GaAs pHemt LNAs
`` Power consumption: 3.5 mA
`` Single supply: 3/5/6 V
`` High RF gain: 13.5 dB
`` Low noise figure: 1.6 dB
`` Linearity (OIP3): 12 dBm
52
BFU710F as mixer in Ku-band LNB

`` Typical application: Active mixer for single output LNB
`` Single supply 3/5/6 V
`` Low power consumption: 2.5 mA
`` LO drive < 0 dBm
`` SSB noise figure < 8 dB (including BPF at the input)
`` SSB conversion gain > 5 dB (including BPF at the input)
`` Linearity (OIP3) > 0 dBm
`` LO-RF isolation min 20 dB
`` RF match better than 10 dB
`` IF match better than 8 dB
BFU730F as LNA in Ku-band LNB
`` Typical application: LNA2 and LNA3 for multiple output LNB
`` Overall similar RF performance to GaAs pHemt LNAs
`` Power consumption: 11 mA
`` Single supply 3/5/6 V
`` Very high RF gain: 11.5 dB
`` Low noise figure: 1.25 dB
`` Linearity (OIP3) > 17 dBm
`` Return loss > 10 dB
MMICs BGA28xx as IF amplifiers (1st stage & output stage)
For compatibility with existing designs, the series uses market
standard packages: the SOT363 and the pin-compliant
SOT363F. The pinning is identical to NXPs current gain
block family, and the blocks deliver similar noise figures. New
features include flatter gain, a positive gain slope, improved
P1dB vs Icc, and no necessity for an output inductor.
`` Internally matched at 50
`` Gain slope > 0.5 dB
`` Single supply voltage: 3.3 or 5 V
`` Reverse isolation: > 30 dB up to 2 GHz

`` Best-in-class power vs current consumption
`` Noise figure: 4 to 6 dB at 1 GHz
`` Unconditionally stable (K > 1)
`` High-compression-point models work without output inductor
`` 6-pin SOT363 plastic SMD package
Since the ICs, transistors, and the MMICs are manufactured

in NXPs industry-leading QUBiC4X SiGe:C and QUBiC4+
process, they offer better overall RF performance and are more
robust than their GaAs equivalents with the cost advantage
of silicon. The process technology also enables higher
integration, for added features. NXP owns the industrial base
for production (wafer fab, test, assembly), so volume supplies
can be assured.
Focus applications,
These products the integrated downconverters TFF101xHN,

the wideband transistors BFU710F/730F for LNA and mixer
functionality, and the BGA28xx series of IF MMICs are
the most recent additions to NXPs leading portfolio for
satellite LNB. They join the other discrete products, including

oscillators, amplifiers, and switches, to provide complete
coverage for all LNB architectures.
Satellite outdoor unit, LNB for multiple users

horizontal
1st
antenna stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
H low
IF amplifier
oscillator
low
mixer
BIAS IC
V low
mixer
(4 x 2)
IF
SWITCH
IF amplifier
H high
IF
amplifier
IF out 1
IF amplifier
vertical
antenna
high
oscillator
IF
amplifier
V high
1st
stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
IF amplifier
IF out 2
brb022
NOTE: Also look at chapter 1.4.4 satellite outdoor unit.
Fully integrated mixer/oscillator/downconverter
LB/HB/H/V detection
pHemt bias
LO oscillator control
linear regulated 5 V
BIAS
V/T
LIN
HB
Hor
2nd
10.7 ~ 12.75 GHz
BPF
1st
Ver
0.95 ~ 1.9 GHz/

1.1 ~ 2.15 GHz
mixer
IF amps
BFU710F
25.000 MHz
DC 13 (H)
or 18 (V)
0 or 22 kHz
PLL/VCO
TFF101xHN
LOOP
FILTER
001aan954
53
2.3.3
VSAT, 2-way communication via satellite
Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308 with NXP's Ku-/ Ka-band RF LO
generators
The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise localoscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a high
performance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308
from Intelsat.
VSAT networks are commonly used to transmit narrowband

data, such as point-of-sale transactions for credit cards, or to
transmit broadband data that supports satellite Internet access
to a remote location, VoIP, or video.
The network typically consists of a dish antenna, an outdoor
unit, and an indoor unit. The outdoor unit is used for
frequency translation between RF and IF, and usually includes
a microwave-based uplink/downlink separator, a low noise
block (LNB) for receiving the downlink signals, and a block
Upconverter (BUC).
The VSAT ICs can be used to create the LO generator for a
linear BUC (meaning the IF or RF conversion is done by mixing
with an LO).
Features
`` Phase noise compliant with IESS-308 (Intelsat)
`` Differential input and output
`` Divider settings at 16, 32, 64, 128 or 256
`` Lock-detect output
`` SiGe:C technology (120 GHz fT process)
`` HVQFN24 (SOT616-1) package
Applications
`` VSAT block upconverters
`` VSAT down conversion
`` Local oscillator signal generation
To enable precise frequency and time multiplexing, the

downlink signal provides an accurate frequency reference of 10
MHz. The indoor unit frequency multiplexes this with the uplink
IF signal, and the LO signal in the BUC needs to be frequencylocked to the reference.
The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1)
package. The pins have been assigned for optimal performance.
Three voltage domains are used to separate the block on the
IC, and two pins for each output (OUT-P and OUT-N) have been
reserved to match a typical layout using a linewidth of Z = 50
microstrip on a 20-mil RO4003 board (1.1 mm).
The ground pins have been placed next to the reference input
and the output, and, to minimize crossings in the application,
all the supply pins are on the same side of the IC.
54
Satellite
HUB
Focus applications,
VSATs
Typical VSAT network
mixer
synchronized QPSK data on L-band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz)
from
indoor
unit
13.05 GHz settings

(12.8 GHz settings)
10 MHz
/64
(/48)
PFD
LF
PFD
solid
state
power
amp
amp
12.8~13.05
on-chip VCO
203.90625 (200) MHz
band
pass
filter
LF
band
pass
filter
156.25 kHz
(208.83 kHz)
/1305
(/960)
/64
TFF1003HN
cleanup PLL build around VCXO

narrow bandwidth
203.90625 (200) MHz > 13.05 (12.8) GHz

TFF1003 @ DIV = 64 PLL with on-chip VCO
brb200
Complete LO generator for linear BUC with TFF1003HN
Type
Package
fIN(REF)
VCC
ICC
Typ
PLL phase noise

@ N=64 @ 100 kHz
Max
PLL
fo(RF)
Output buffer
Input
Po
RLout(RF)
Si
Typ
Max
Min
(MHz)
(V)
(mA)
(dBc/Hz)
(GHz)
(dBm)
(dB)
(dBm)
TFF1003HN
SOT616
50 - 815
3.3
100
-92
12.8 - 13.05
-5
-10
-10
TFF1007HN
SOT616
228.78 - 234.38
3.3
130
-104
14.62 - 15
-3
-10
-10
TFF1008HN
SOT616
220.91 - 225.2
3.3
130
-104
14.1 - 14.4
-3
-10
-10
55
2.3.4
Low noise LO generators for microwave & mmWave radios
NXP LO generators (integrated VCO/PLL) TFF11xxxHN

Manufactured in NXPs breakthrough QUBiC4X SiGe:C process technology, these highly integrated,
alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower
the total cost of ownership.
These low noise local-oscillator (LO) generators, optimized
for use in many different microwave applications between
7 and 15 GHz, deliver highly accurate performance in a small
footprint. They require no alignment or frequency modification
on the production line, so they simplify manufacturing. High
integration saves board space and makes design-in easier, for
lower overall cost and faster development.
Features
`` TFF11xxxHN family: lowest-noise LO generators for
a full family in 7 to 15 GHz range
`` Maximum power consumption for all types is 330 mW (typ)
`` Phase-noise compliant with IESS-308 (Intelsat)
`` Proven QUBiC4X SiGe:C technology (120 GHz fT process)
`` External loop filter
`` Internally stabilized voltage reference for loop filter
`` 24-pin HVQFN (SOT616-1) package
Applications: TFF11xxxHN family
`` Industrial/medical test and measurement equipment
`` Electronic warfare (EW)
`` Electronic countermeasures (ECM)
`` Point-to-point
`` Point-to-multipoint
`` Satellite communication/VSAT
`` Radar systems
Since these ICs are manufactured in NXPs industry-leading

QUBiC4X SiGe:C process, they offer better overall RF
performance, are more robust than their GaAs equivalents,
and consume much less power. The process technology also
enables higher integration, for added features. NXP owns the
industrial base for production (wafer fab, test, assembly),
so volume supplies can be assured.
The TFF1003HN is the basis for the entire family of LO
generators. It has VCO coverage of 12.8 to 13.05 GHz and
accepts input signals from 50 to 816 MHz. The divider can be set
for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a
stability of 2 dB. The family of LO generators is completed by
a range of 18 different devices operating in a center frequency
ranging from 7 to 15 GHz. The RF performance of all these
devices is consistent with the TFF1003HN.
All the LO generators have low power dissipation
(330 mW typ), and all are available in a space-saving 24-pin
HVQFN package.
Full portfolio overview of low noise LO generators for

general microwave applications at chapter 3.4.4
56
2.4 Portable devices

2.4.1
QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification
NXP's GPS low noise amplifiers offer the best reception of weak signals because of dynamic suppression
of strong cellular and WLAN transmit signals. Moreover, as only two external components are required,

`` Low noise figure of 0.9 dB and choice of system-optimized
gain of 16.5 or 18.5 dB, allowing for the best GPS reception
`` Adaptive biasing dynamically suppresses strong cellular and
WLAN transmit signals, further optimizing GPS reception
`` Only 2 external components and 1.45 x 1.0 mm package
size, enabling the smallest footprint and lowest external
component cost
`` AEC-Q100 qualification (BGU7004, BGU7008), meaning
highest reliability under harsh conditions
Key applications
`` Smart phones
`` Feature phones
Adaptive biasing
GPS signal power levels are weak and below the noise floor
at -155 dBm. Moreover, in many consumer products such as
smart phones, inter-modulation and harmonics caused by
strong transmitters such as WLAN, can drive the GPS LNA
into compression. With adaptive biasing, increasing output
power from jammers is immediately detected, and current is
temporarily increased. Adaptive biasing dynamically suppresses
jammers, maintaining optimal GPS signal reception for as long
as possible.
Focus applications,
designers can save up to 50% in PCB size and 10% in component cost.
Power
GPS Signal
`` Tablets
`` Personal navigation devices (PND)
`` Digital still camera (DSC)
`` Digital video camera (DVC)
`` RF front end modules (used in phones)
`` Complete GPS chipset modules (used in DSC)
`` Automotive applications (BGU7004/8): toll collection,
emergency call
`` Theft protection (laptop, ATM)
GPS band
Output power
Input power
Freq.
Jammer:
GSM 1850
1575 MHz
Gain vs. jammer power for NXP GPS LNA

adaptive biasing vs Competitor.
Gain [dB]
(Pin 1575 MHz = -45 dBm, jammer at 1850 MHz).

22
21
20
19
18
17
16
15
14
13
12
-80
-70
-60
-50
-40
-30
-20
-10
P_Jammer at input DUT [dBm]
57
Smallest footprint
Type
MMIC *
Package size
Package
mm
Pins
Pitch Area
mm
mm
mm
SMD's
Appl.
SMD size
X
SMD's
area
Appl. area
mm2
mm2
mm
mm
mm2
BGU7005/7
SOT886
1.45 x 1
1.7
1.25
0.5
2.13
1.5
0.8
2.4
4.53
Competitor
Wafer level package
1.26 x 0.86
1.5
1.1
0.4
1.65
1.5
0.8
7.2
8.85
Competitor
Wafer level package
0.86 x 0.86
1.1
1.1
0.4
1.21
1.5
0.8
4.8
6.01
Competitor
Thin small leadless package
2 x 1.3
2.25
1.55
0.5
3.49
1.5
0.8
4.8
8.29
Competitor
Thin small leadless package
1.4 x 1.26
1.65
1.5
0.48
2.48
1.5
0.8
4.8
7.28
Competitor
Thin small outline non-leaded
1.5 x 1.5
1.75
1.75
0.5
3.06
1.5
0.8
9.06
* Incl. keep out area on pcb (common used assembly rule)
Selection guide
Type
@ 1.575 GHz
Supply
voltage
Supply current
Insertion power gain
Noise
figure
Input power at 1 dB gain

compression
Input third-order intercept point

f1 = 1713 MHz, f2 = 1851 MHz
Vcc
Icc
|s21|2
NF
PL(1dB)
IP3i
(V)
(mA)
(dB)
(dB)
Package
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85
V,
Min
Vcc =
2.85
V,
Typ
Min
Max
Min
Typ
Max
Min
2.2
2.85
15
16
18.3
20
0.8
-20
BGU7004^
SOT886
1.5
2.85
4.5
16.5*
0.9
-14
-11
-11
-8
12
BGU7005
SOT886
1.5
2.85
4.5
16.5*
0.9
-14
-11
-11
-8
12
BGU7007
SOT886
1.5
2.85
4.8
18.5**
0.9
-15
-12
-14
-11
BGU7008^
SOT886
1.5
2.85
4.8
18.5**
0.9
-15
-12
-14
-11
Typ
Vcc =
1.8 V,
Typ
Vcc =
2.85
V,
Typ
SOT891
58
Max
Vcc =
1.8 V,
Min
(dBm)
Vcc =
2.85
V,
Min
BGU7003

* = 16.5 dB without jammer / 17.5 dB with jammer
** = 18.5 dB without jammer / 19.5 dB with jammer
Typ
(dBm)
Vcc =
2.5 V,
Icc =
5 mA
2.5 Industrial, scientific & medical

2.5.1
Medical applications driven by RF power: From imaging to cancer treatment,

a flexible and versatile technology in the doctors toolbox
RF technology is making its way into all kinds of medical applications, ranging from the
well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment,
and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation).
One clear trend is the increasing share of RF-based technologies for ablation. Another is the
achieve higher spatial resolution, better control, and shorter treatment times.
RF radiation is not a new technology in medicine. It is currently

used for imaging purposes in MRI (magnetic resonance imaging)
and EPRI (electron paramagnetic resonance imaging), techniques
that employ frequencies from a few megahertz to about 500 MHz.
Other well-known external heat-treatments to rejuvenate skin or
relieve muscle pain make use of frequencies around 480 kHz not
too demanding in terms of RF. Surgical equipment to cut and
simultaneously coagulate blood vessels runs off RF at about 5 MHz.
The latter application belongs to a class of treatment techniques
that is growing rapidly and uses RF radiation to deposit energy
locally at various parts of the body in general to ablate
(remove) unwanted tissue. Inside the body, the RF energy heats
the surrounding tissue until it is desiccated and/or necrotized. The
damaged tissue will later be re-absorbed by the surrounding, living
tissue. Further application examples for RF ablation include cancer
treatment in the lung, kidney, breast, bone and liver, removal of
varicose veins, treatment of heart arrhythmia, and a growing list of
other applications that benefit from the high control and feedback
possible with RF.
Another advantage of RF in this context is the fact that it can be
applied via small catheters ending in antennas that deploy the RF
signal. Unlike older, direct-current techniques, the tissue is heated
only very locally around the antenna. Neighboring nerves (and the
heart) are not stimulated. This led to the development of a variety
of specialized catheters, used during minimally invasive surgery,
along with ultrasound or X-ray imaging to determine the exact
location of the RF-active part. During the treatment, the impedance
of the surrounding tissue can be monitored and the end-point
determined. With proper catheters, one can even achieve self
limitation due to the reduced uptake of RF energy in desiccated
tissue. Likewise, the RF frequency can be used to tune the energy
deposition zone around the catheter: the higher the frequency, the
smaller the penetration depth and hence the volume to deposit
the RF energy in the watery tissue.
With the trend towards higher RF frequencies and powers, the
complexity of RF generators and the requirements for the device
technology also increase. Above 10 MHz, say, up to 3.8 GHz, the
technology of choice for power amplifiers is Si LDMOS (laterally
diffused metal oxide semiconductor). This technology has proven

to be powerful, efficient, and rugged in base stations, radar
systems, broadcast transmitters, and other industrial, scientific,
and medical (ISM) applications. LDMOS is available from up to
50 V supply to achieve power levels up to 1,200 W per single
device, with outstanding ruggedness and high gain and efficiency.
To drive and control the LDMOS power amplifier stages, it
takes voltage-controlled oscillators, phase locked loops, and
medium power amplifiers. These parts of the RF signal chain are
conveniently available based on reliable and high volume SiGe:C
(QUBiC) semiconductor technologies. Going a step further, one
can even use high-speed converters to drive the signal chain
entirely from the digital domain, for full and easy control over the
shape and modulation of the applied RF.
RF implications
These in-situ medical applications and, in general, most of the ISM
applications, usually form highly mismatched RF loads during some
part of the usage cycle. This in turn means that, without protection
or other measures, all of the "injected" RF power reflects back into
the final stage of the amplifier and needs to be dissipated in the
transistor(s), and most likely destroys the device(s) if this situation
lasts too long. LDMOS transistors are designed to be extremely
rugged and generally withstand these mismatch situations without
degrading over time.
This device ruggedness, or the ability to withstand harsh RF
conditions in general, be it mismatch or extremely short pulse rise
and fall times, is essential for reliable device performance. RF power
companies have gone to great lengths to achieve best-in-class
device ruggedness. The technologies have been hardened under
the most stringent ruggedness tests during development, which is
particularly true for the 50 V technology. Among other factors, the
base resistance of the parasitic bipolar and the drain extension of
the LDMOS device play key roles in this respect.
This ruggedness, combined with the power density and the high
efficiencies achievable, make LDMOS the preferred technology for
RF power amplifiers up to 3.8 GHz.
59
Focus applications,
trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to
2.5.2 RF-driven plasma lighting:

The next revolution in light sources are powered by solid-state RF technology
Recent developments in RF power technology, such as improved cost structure, ruggedness. and power levels
of up to 1200 W per device, have enabled a breakthrough light source technology, called RF plasma lighting.
All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas
and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to
create and power a bright plasma, the color of which can be tuned by the composition of its constituents.
This technology works without any additional electrodes in
the bulb, unlike standard high-intensity discharge lamps.
No electrodes means very long operating lifetimes, since
the contamination and wire erosion that lead to decreased
efficiency and eventual lamp failure are precluded. The RF
light source lives up to 50,000 hrs when it reaches 50% of its
original light output. Typical high-intensity discharge lamps, by
comparison, achieve 20,000 hrs operating life. Another strong
point of the plasma light is its efficiency: 1 W of RF power is
converted to 130-140 lm of light. This leads to very compact,
very bright lamps that easily emit 10,000 to 20,000 lm of white
light with a close-to-sunlight color rendition.
The key enabler for the RF light source is RF technology,
based on Si LDMOS RF power transistors. LDMOS technology
operating at 28 V is the leading RF power technology for cellular
base stations or broadcast transmitters as final amplifier stages
in the frequency range between a few MHz up to 3.8 GHz.
Recently, another LDMOS format, 50 V LDMOS, has emerged
for use in broadcast, ISM, defense and avionics applications.
It combines high power density to achieve power levels up to
1,200 W per single device and outstanding ruggedness, with
high gain and efficiency at frequencies of up to 1.5 GHz.
Comparison of lighting technologies
The table below summarizes currently available technologies that
generate bright light with varying degrees of efficiency. It lists a
few key parameters, including lifetime, luminous flux, efficacy, color
rendition index, color temperature, start-up time, and re-strike time
(time to start after switch-off from normal operation).
Color
Start-up Re-strike
Lifetime Luminous Efficacy
Color
flux
temperature
time
time
(lm/W) rendering
(hrs)
(klm)
(K)
(s)
(s)
Incandescent 2,000
1,700
10 to 17
100
3200
0.1
0.1
Fluorescent
10,500
3,000
115
51 to 76 2940 to 6430
0.3
0.1
LED
25,000
130
60 to 100
30
6000
0.1
0.1
Type
HID (highintensity
discharge)
20,000
25,000
65 to 115
40 to 94
4000 to 5400
60
480
RF plasma
50,000
25,000
100 to140
70 to 94
4000 to 5500
30
25
Table 1: Comparison of light-generation. Note: numbers are only valid for a

qualitative comparison. Source: www.wikipedia.org and references therein.
60
The plasma light source is among the brightest and most

efficient available to date and boasts a very long life time.
Important to note is the high brightness per bulb: much
brighter than LEDs, for example. Consequently, it takes
multiple LEDs to generate the light output of a single plasma
light source. Hence, LED luminaries for street lighting will be
considerably larger than those for plasma light sources.
RF implications
The RF plasma lighting sources can operate at a wide range of RF
frequencies, but initial applications typically focus at frequencies
of around a few hundred megahertz. At these frequencies both
the 28 and 50 V LDMOS technologies can be used, yielding
high efficiency values of 70% to more than 80% and low-heat
dissipation making compact plasma lamp designs possible.
The RF-driven plasma light is a perfect example of novel
applications that can be powered by RF energy in the
industrial, scientific, and medical (ISM) realm. Established
technologies use RF to pump a gas discharge in a laser cavity.
These "gas discharge" applications and in general, most of
the ISM applications, typically form highly mismatched RF
loads during some part of the usage cycle. In the case of
gas discharges, for example, the gas cavity acts as an "open
circuit" during switch-on. This in turn means that without
protection or other measures, all of the "injected" RF power
reflected back into the final stage of the amplifier needs to
be dissipated in the transistor(s) right there and most likely
destroys the device(s) if this situation lasts too long. After the
discharge strikes, the load impedance reverts to "matched,"
eventually, and the transistor sees an acceptable load.
Obviously, these mismatched conditions occur every time the
plasma is "switched on, exerting strain on the finals. LDMOS
transistors are designed to be extremely rugged and generally
withstand these mismatch situations without degrading over
time.
This ruggedness, combined with the high power density and
efficiency achievable, make LDMOS the preferred technology
for RF lighting and other equally demanding applications in the
ISM realm.
2.5.3
QUBiC4 Si and SiGe:C transistors for any RF function
NXP's 6th (Si) and 7th (SiGe:C) generation RF transistors offer the best RF noise figure versus gain
performance at 12 GHz , drawing the lowest current. This performance allows for better signal reception
at low power and enables RF receivers to operate more robustly in noisy environments. This family of 6th
(Si) and 7th (SiGe:C) generation RF transistors can be used in most RF applications as low noise amplifiers
(BFUx10F, BFUx30F, BFU725/N1), high linearity and high output amplifiers (BFUx60F, BFUx90F), buffer

`` 40 / 110 GHz transition frequency allows for applications up
to 18 GHz and beyond.
`` From low noise figure of 1.45 dB and high gain of 13.5 dB at
12 GHz to high linearity of 34dBm (OIP3) at 1.8 GHz, gives a
broad choice of parts for the perfect fit for each application.
`` Consuming only 3 mA to generate 13.5 dB gain at 12 GHz
`` Plastic surface-mount SOT343F package for high
performance and easy manufacturing
Focus applications,
amplifiers, mixers, and oscillators.

Demo boards and application notes
`` Single-stage Ku-band LNA using BFU730F
`` Single-stage 2.3-2.7 GHz LNA with BFU730F
`` Single-stage 5-6 GHz WLAN LNA with BFU730F
`` 1st stage SDARS LNA with BFU730F
`` 2nd stage SDARS LNA with BFU690F
Key applications
`` 2nd and 3rd LNA stage and mixer stage in DBS LNBs
`` Ka- / Ku-band DROs
`` Satellite radio (SDARS) LNA
`` C-band / X-band high-output buffer amplifier
`` AMR
`` WLAN / WiFi
`` ZigBee
`` Bluetooth
`` FM radio
`` GPS
`` LTE, cellular, UMTS
`` Mobile TV
`` RKE
`` High linearity applications
`` Low current, battery-equipped systems
`` Low noise amplifiers for microwave communications systems
`` Medium output power applications
`` Microwave driver / buffer applications
Full portfolio overview of 6th and 7th generation RF

wideband transistors at chapter 3.3.1
61
2.5.4
Building on decades of innovation in microwave and radar
NXP builds on more than 50 years of history in semiconductor technology and component design. For more
than three decades we have led in providing high performance RF technologies for microwave applications.
The company has built a strong position in the field of RF small signal and power transistors for microwave
amplifiers with best-in-class Si devices and processing technologies.
We were the first semiconductor company to supply S-band
transistors (2700 to 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we are currently developing
new high power and high-bandwidth technologies based on
gallium nitride (GaN) material.
Another enabling technology is NXPs BICMOS process
QUBiC, which is available in several variants with fT up to
200 GHz, each specialized to address specific small signal RF
applications.
The product portfolio encompasses:
- Low noise amplifiers (LNAs)
- Variable gain amplifiers (VGAs)
- Mixers
- Local oscillators (LOs)
- LO generators
NXP now also focuses on architectural breakthroughs and
has developed highly integrated products for microwave and
millimeter wave. One example is a family of LO generators
from 7 GHz to 15 GHz with integrated PLL and VCO. Another
example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W.
RF small signal product highlight:
Manufactured in NXPs breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators TFF1xxxHN are low-power, low-spurious solutions
that simplify design-in and lower the total cost of ownership.
62
Features
`` Lowest noise LO generators for 7 to 15 GHz range
`` Maximum power consumption for all types, typical 330 mW
`` Phase-noise compliant with IESS-308 (Intelsat)
`` Proven QUBiC4X SiGe:C technology (120 GHz fT process)
`` External loop lter
`` Internally stabilized voltage reference for loop filter
RF power product highlight
The BLS6G2933P-200 is the first LDMOS-based, industrystandard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
Microwave applications and bands of operation

System
Frequency
VHF and UHF
<1 GHz
L-band
1200 - 1400 MHz
S-band
2700 - 3500 MHz
X-band
8000 - 12000 MHz
Commercial Avionics
DME (Distance Measuring Equipment)
978 - 1215 MHz
Transponders
Mode A / Mode S / Mode C / TCAS
1030 - 1090 MHz
Military Avionics
IFF transponders (Identification, Friend or Foe)
1030 - 1090 MHz
TACAN (Tactical Air Navigation)
960 - 1215 MHz
JTIDS / MIDS
(Joint Tactical Information Distribution System)
960 - 1215 MHz
Marine radar
Focus applications,
Features:
`` Reduces component count and considerably simplifies radar
system design
`` P1 dB output power 200 W
`` Efficiency > 40%
`` Industry-standard footprint
`` 50 in/out matched for entire bandwidth
`` Lightweight heat sink included
`` The advantages of LDMOS in comparison with Bipolar
- Higher gain and better efficiency
- Better ruggedness overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Consistent performance no tuning required
- Improved thermal characteristics no thermal runaway
- Non-toxic packaging and RoHS-compliance
9300 - 9500 MHz
For a complete list of products, see the respective small

signal and power microwave pages
63
2.5.5
Digital broadcasting at its best
The BLF881 / BLF888A transistor line-up enables todays most powerful and
efficient digital broadcast transmitter applications.
BLF881
This transistor is based on NXPs 50 V LDMOS technology and
features 120 W RF output power for broadcast transmitter and
industrial applications. An unmatched device, the BLF881 can be
used in the HF to 1 GHz range. The excellent ruggedness and
broadband performance of this device makes it ideal for digital
transmitter applications either on its own or as a driver in
combination with the high power transistor BLF888A.
The BLF881 is also available in an earless version, the BLF881S,
which enables an even more compact PCB design.
Key features and benefits

`` Excellent efficiency and reliability
`` Highest power levels in the market
`` Best-in-class ruggedness designed into all devices
`` Best broadband performance
`` Easy power control
`` Best-in-class design support
`` Low thermal resistance design for unrivalled reliability
`` Advanced flange material for optimum thermal behavior and
reliability
`` Designed for broadband operation (470 to 860 MHz)
Key applications
`` Analogue and digital TV transmitters
BLF888A
Running from a 50 V supply voltage, the BLF888A is a 600W
LDMOS RF power transistor for broadcast transmitter and
industrial applications. Being a matched device, BLF888A
is optimized for digital signal broadcasting and can deliver
120 W average DVB-T output power over the full UHF band
from 470 MHz to 860 MHz with 20 dB power gain and 31%
drain efficiency. The excellent ruggedness of this transistor
(it withstands a VSWR in excess of 40:1) makes it the ultimate
choice as final stage for digital transmitter applications
ideally accompanied by a BLF881 as the driver. This device is
also available as an earless package, denoted BLF888AS, to
enable surface mount assembly processes and take optimum
advantage of the very low thermal resistance package.
typ. 0.5 kW
DVB-T
Driver stages
8 final
TV exciter
DVB-T
harmonic
filter power
monitor
typ. 5 kW DVB-T
output power
amplifiers
Function
Driver
Final
64
Type
fmin (MHz)
fmax (MHz)
CW - P1dB
(W)
VDS (V)
brb339
DVB-T
PL (W)
DVB-T
D (%)
DVB-T
Gp (dB)
Package
SOT467C
BLF642
1400
35
32
33
20
BLF881(S)
1000
140
50
30
31
21
SOT467C
BLF884P
470
860
350
50
70
32
20
SOT539A
BLF888A(S)
470
860
600
50
120
31
21
SOT539
BLF879P
470
860
450
42
90
31
20
SOT539A
2.5.6
Broadband medium power amplifiers for all 400 to 2700 MHz applications
NXP medium power MMICs BGA7xxx for broadband applications

Produced in NXPs proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal performance
Features
`` Single-supply operation (3.3 or 5 V)
`` Fast shutdown
`` Quiescent current adjustment
`` Two package options, smallest leadless package (3 x 3 mm)
and leaded SOT-89
Base station
The high power level of these MMICs makes them an excellent
choice for mobile infrastructure applications. They offer the
highest gain over all base stations frequencies. The quiescent
current feature allows for high efficiency and linearity in Class AB
operation. The bias circuitry delivers stable performance over
temperature and supply variations. The integrated shutdown
function is a power-saving feature and can be used for fast
shutdown. The MMICs can be tuned for any band between
VHF and 2.7 GHz. Unbeatable thermal performance (30 C/W)
improves overall quality and reliability.
Applications
`` Wireless infrastructure (base station, repeater)
`` eMetering
`` Broadband CPE (MoCA)
`` Satellite Master Antenna TV (SMATV)
`` Industrial applications
`` W-LAN / ISM / RFID
eMetering
These MMICs are also very well suited to eMetering applications
in the 900-2400 MHz ISM band. High integration and single
supply operation mean that the MMICs can be combined with
just a few other components to create a full-featured solution.
The MMICs can be operated on battery power (with an energy
saving shutdown mode) and are tunable between Class A and
AB. They can also work on a power line network, so they support
gas metering with or without a power connection. The builtin reliability and quality of a silicon-based process provides
longevity, as does the improved ESD performance.
Manufactured in NXPs breakthrough QUBiC4 process, these

MMICs deliver RF performance comparable to that of their GaAs
equivalents, but at a lower cost and with additional features, like
thermal performance and ESD robustness. The QUBiC4 process
makes it possible to support even more features, including active
biasing, quiescent adjustment, VGA interfaces, and a power
saving shutdown mode. To increase design flexibility, all the
MMICs support single-supply (3.3/5 V) operation. And, to save
space, they are available in the smallest package size (3 x 3 mm)
and with leadless options.
Supply
Type
Package
Vcc
Shutdown control
Icc
VI(D)L(SHDN)
VI(D)H(SHDN)
II(D)L(SHDN)
RF performance
RF performance
Typ @ f = 940 MHz
Typ @ f = 1960 MHz
Typ
Typ
Max
Min
Max
Min
Max
Typ
Gp
PL(1dB)
OIP3
NF
Gp
PL(1dB)
OIP3
NF
(MHz)
(V)
(mA)
(mA)
(V)
(V)
(V)
(V)
(A)
dB
dBm
dBm
dB
dB
dBm
dBm
dB
BGA7124
SOT908
leadless
400 - 2700
130
200
0.7
2.5
Vbias
22
25
38
16
24
38
BGA7024
SOT89
leaded
400 - 2700
110
22
24
38
16
25
38
BGA7127
SOT908
leadless
400 - 2700
180
325
0.7
2.5
Vbias
20
28
44
13
28
43
BGA7027
SOT89
leaded
400 - 2700
170
19
28
41
12
28
43
BGA7130*
SOT908
leadless
400 - 2700
0.7
2.5
Vbias
18
30
45
12
30
45
The specifications of the BGA7130 and BGA7133 are target specifications until development is completed.
65
Focus applications,
and added-value features to all 400 to 2700 MHz applications at a lower cost than GaAs versions.
2.6 Technology
2.6.1
Boost efficiency and operational cost in wireless infrastructure with GaN
NXP GaN technology for RF power

This new gallium-nitride (GaN) technology, the result of a collaborative development effort, enables highpower amplifiers that deliver very high efficiency in next-generation wireless communication systems.
Features
`` Power density up to five times higher than Si LDMOS
`` 50 V operation
`` High gain
`` High efficiency
`` High reliability
`` Low parasitics
Benefits
`` High frequency combined with high power
`` Broadband operation that lets a single power amplifier
function at multiple frequencies
`` Enabling technology for next-generation, high power, Switch
Mode Power Amplifier (SMPA) architectures
`` Lowers system costs and operational expenditures
`` Ideal for tower-top base stations
Applications
`` Cellular base stations
`` WiMAX
`` Broadcast
`` Radar
Collaborating with United Monolithic Semiconductors and the
Fraunhofer Institute for Applied Solid State Physics, NXP has
developed a gallium-nitride (GaN) process technology that
boosts performance of next-generation RF power amplifiers.
The new GaN process, with its high frequency combined with
high power, puts NXP in the ideal position to support future
applications while continuing to evolve its well-established
LDMOS technology. The GaN technology delivers numerous
benefits to manufacturers of infrastructure equipment. Using
the GaN technology in a transmitter represents a significant
cost savings in system operation due to the high efficiencies
achievable, along with major improvements in system
performance and flexibility. Most of todays base station
power amplifiers are limited to specific applications. The new
GaN-based technology creates a universal transmitter that
can be applied in multiple systems and frequencies. Such
universal power amplifier architecture, enabled by NXPs GaN
66
technology, simplifies transmitter production and logistics. The

technology also allows operators to switch between frequency
bands to instantly meet demands in the base stations
coverage area. GaN transistors enable much more efficient
power amplifiers and, as a result, drive down the operational
costs of telecom operators. GaN transistors can operate at
much higher junction temperatures than Si- and GaAs-based
devices, so GaN is an ideal candidate for environments with
reduced cooling capabilities, such as tower-top base stations.
Also, with its high power densities, GaN has the potential
to expand into other areas, including high power broadcast
applications, where solid-state power amplifiers built with
vacuum tubes are still the norm. NXPs first GaN broadband
power amplifiers are expected to be available at the beginning
of 2012, with Switch Mode Power Amplifiers (SMPAs) following
in subsequent years.
Performance (targets)
Saturated output power at 50 V
100 W
Frequency
2.2 GHz
Maximum PAE
68%
Linear power gain
19 dB
2C-WCDMA linear efficiency with DPD
40% at 52 dBc IM3 at 8 dB OPBO
Assembly of GaN power bar in standard ceramic package
2.6.2
Looking for a leader in SiGe:C? You've just found us!
NXP QUBiC4 process technology

NXP's innovative, high performance SiGe:C QUBiC4 process lets customers implement more functions into
less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing
advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from
GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance,
linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power.
Focus applications,
QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance
upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high
volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very
low ppm in the field.
QUBiC4 in three variants, each having its own benefits
for specific application areas:
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 m CMOS with
5 metal layers for integration of dense digital logic-based
smart functionality, a rich set of active and passive devices for
high frequency mixed-signal designs including thick top metal
layers for high quality inductors. The device set includes a
37 GHz fT NPNs with 3.8 V breakdown voltage (BVce0) and low
noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz high
voltage NPN with 5.9 V breakdown voltage, differential and
single-ended varicaps with Q-factor > 30, scalable inductors
with Q-factor > 20, 800 MHz FT lateral PNPs, 0.25 m CMOS,
137, 220 & 12 to 2000 ohm/sq. poly and active resistors,
a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/m2 oxide
capacitor and a 5 fF/m2 MIM capacitor, 1 to 6 fF/m2 oxide
capacitors and various other devices including L-PNPs, isolated
NMOS, 3.3 V CMOS and RF-CMOS transistors capacitor. The
QUBiC4+ process is silicon-based and ideal for applications up
to 5 GHz (fT = 37 GHz , NF < 1.1 dB @ 1.2 GHz), as well as for
medium power amplifiers up to 33 dBm.
QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers an additional features set of devices for high
frequency mixed-signal designs, including 180 GHz ft NPNs
with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 @ 10 GHz), 0.25 m CMOS, several resistors,
a 5.7 fF/m2 oxide capacitor and a 5 fF/m2 MIM capacitor.
QUBiC4Xi represents the newest SiGe:C process, with
improved on fT (> 200 GHz) and even lower noise figure
(NF < 0.5 7 dB @ 10 GHz). It is ideal for applications beyond
30 GHz, such as LO generators.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C-based extension
of the QUBiC process for high frequency mixed-signal designs
and offers a rich set of devices for QUBiC high frequency
mixed-signal designs, including a 140 GHz fT NPN with 2.5 V
breakdown voltage and very low noise figure (NF < 1.0 @ 10 GHz),
0.25 m CMOS, a variety of resistors, a 5.7 fF/m2 oxide capacitor,
and a 5 fF/m2 MIM capacitor.
The QUBiC4X is ideal for applications that typically operate at
up to 30 GHz (fT = 137 GHz , NF < 0.8 dB @ 10 GHz) and ultralow noise applications such as LNAs and mixers.
67
SiGe:C
QUBiC4Xi
f / fmax = 180/200 GHz

T
SiGe:C
QUBiC4X
fT / fmax = 137/180 GHz
+VPNP
+TFR
QUBiC4+
+DG
+HVNPN
BiCMOS
f /f max = 37/90 GHz
-4ML
QUBiC4+
`` Baseline, 0.25um CMOS, single poly, 5 metal
`` Digital gate density 26k gates/mm2
`` fT/fMAX= 37/90 GHz
`` +TFR Thin Film Resistor
`` +DG Dual Gate Oxide MOS
`` +HVNPN High Voltage NPN
`` +VPNP Vertical PNP (high Vearly)
`` -4ML high density 5fF/m2 MIM capacitor
`` Wide range of active and high quality passive devices
`` Optimized for up to 5 GHz applications
QUBiC4X
`` SiGe:C process
`` fT/fMAX= 137/180 GHz
`` Optimized for up to 30 GHz applications
`` Transformers
QUBiC4Xi
`` SiGe:C process
`` Improves fT/fmax up to 180/200 GHz
`` Optimized for ultra-low noise for microwave above 30 GHz
Features
QUBiC4+
Release for production

CMOS/Bipolar
QUBiC4X
QUBiC4X
2004
2006
2008
CMOS 0.25um, Bipolar 0.4um,

Double poly, Deep trench, Si
CMOS 0.25um, Bipolar LV 0.4um,

Double poly, Deep trench, SiGe:C
CMOS 0.25um, Bipolar LV 0.3um,

Double poly, Deep trench, SiGe:C
LV NPN f T/Fmax (GHz)
37/90 (Si)
137/180 (SiGe:C)
180/200 (SiGe:C)
HV NPN f T/Fmax (GHz)
28/70 (Si)
60/120 (SiGe:C)
tbd (SiGe:C)
NPN BVce0: HV/LV **
5.9 / 3.8 V
3.2 / 2.0 V
2.5 / 1.4 V
7 / >9
planned
planned
2.5 / 3.3 V
2.5 V
2.5 V
V-PNP f T / BVcb0 (GHz / V)

CMOS Voltage /
Dual Gate
Noise figure NPN (dB)
RFCMOS f T (GHz)
2 GHz: 1.1
10 GHz: 0.8
10 GHz: 0.5
NMOS 58, PMOS 19
NMOS 58, PMOS 19
NMOS 58, PMOS 19
Isolation (60 dB @ 10 GHz)
STI and DTI
STI and DTI
STI and DTI
Interconnection
(AlCu with CMP W Plugs)
5 LM, 3 m top Metal
5 LM, 3 m top Metal

2 m M4
5 LM, 3 m top Metal
NW, DN, Poly-Poly

5fF/um2 MIM
NW, DN, Poly-Poly

5fF/um2 MIM
NW, DN, Poly-Poly

5fF/um2 MIM
Poly (64/220/330/2K), Active (12, 57),

High Precision SiCr (270)
Poly (64/220/330/2K), Active (12, 57),

Poly (64/220/330/2K), Active (12, 57),

Varicaps (single-ended &

differential)
2x single ended, Q > 40

3x differential, Q 30-50


Inductors (1.5nH @ 2 GHz)

- scalable
Q > 21, Thick Metal, Deep trench isolation,

High R substrate

High R substrate

High R substrate
Other devices
LPNP, Isolated NMOS
Isolated-NMOS tbd
LPNP, Isolated-NMOS tbd
Mask count
31 / 32 (MIM) / 33 (DG)
35 (MIM)
35 (MIM)
Capacitors
Resistors (/sq)
68
2.6.3
Completing NXP's RF power transistor offering: products in plastic packages (OMP)
NXP is currently developing a complete line of overmolded plastic (OMP) RF power

transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of
plastic packages is cost effectiveness with little or no impact on performance. The range
of plastic devices will complement the extensive range of RF power products that NXP
The products in development include

`` Single-stage broadband drivers in HSOP-outlines, from
3 to 10 W
`` Single-stage OMP drivers from 25 to 45 W, replacing
their ceramic equivalents for cost sensitive applications
`` Dual-stage MMICs from 30 to 60 W that can be used as
high-gain drivers or combined as low power dual-stage
Doherty amplifiers
`` Fully integrated plug-and-play Doherty PAs in a single
package (50 to 100 W)
Function
Some of these products are available for sampling now, while

the rest of the portfolio will be rolled out throughout 2011.
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
Package
Planned
release
BLP05H6100P
500
100
SOT1138
Q112
Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications
BLP05H6500P
500
500
SOT1138
Q411
BLP05H650P
500
50
SOT1138
Q112
BLP09H620
700
960
20
SOT1138
Q112
Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications
BLP10H6120
700
1000
120
SOT1138
Q411
Type
Description
BLP10H6120P
700
1000
120
SOT1138
Q411
BLP10H6300P
700
1000
300
SOT1138
Q411
1000
3, 5, 10
SOT1179
Q311
Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications
1200
1500
100
SOT1138
Q112
Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications

Gen6 OMP LDMOS transistor for broadcast/ISM applications
BLP10H6xx
BLP15M6100P
BLP15M630
1200
1500
30
SOT1138
Q112
BLP15M660P
1200
1500
60
SOT1138
Q411
BLP15M7150P
1200
1500
150
SOT1138
Q112
1500
3, 5, 10
SOT1179
Q411
Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications
BLP15M7xx
HPA
`` Final transistors in OMP package (SOT502-sized) ranging

from 140 to 200 W in frequency bands from 730 MHz
to 2.2 GHz
`` Final transistors in OMP package (SOT502-sized) ranging
from 3 to 500 W in ISM frequency bands from a few MHz up
to 2.45 GHz
BLP25M710
2500
10
SOT1179
Q211
Gen7 OMP LDMOS driver transistor for broadcast/ISM applications
BLP25M74
2500
SOT1179
Q311
BLP7G10S-140P
700
1000
140
SOT1138
Q311
Gen7 OMP LDMOS transistor for GSM & LTE applications
BLP7G10S-140PG
700
1000
140
SOT1204
Q311
Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)
BLP7G10S-25P
700
1000
25
SOT1138
Q411
BLP7G10S-25PG
700
1000
25
SOT1204
Q411
BLP7G10S-45P
700
1000
45
SOT1138
Q411
BLP7G10S-45PG
700
1000
45
SOT1204
Q411
BLP7G20S-45P
1800
2000
45
SOT1138
Q411
BLP7G20S-45PG
1800
2000
45
SOT1204
Q411
BLP7G21S-140P
1800
2050
140
SOT1138
Q411
Gen7 OMP LDMOS transistor for TD-SCDMA applications
BLP7G21S-140PG
1800
2050
140
SOT1204
Q411
Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)
BLP7G22-10
1800
2200
10
SOT1179
Q311
Gen7 OMP LDMOS transistor for WCDMA & GSM applications
BLP7G22S-140
2000
2200
140
SOT1138
Q411
Gen7 OMP LDMOS transistor for WCDMA applications
BLP7G22S-140G
2000
2200
140
SOT1204
Q411
BLP7G22S-45P
2000
2200
45
SOT1138
Q112
Gen7 OMP LDMOS transistor for WCDMA applications
BLP7G22S-45PG
2000
2200
45
SOT1204
Q112
69
Focus applications,
offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.
3. Products by function
NXP RF product catalog:
http://www.nxp.com/rf
3.1
New products
DEV = In development
CQS = Customer qualification samples
RFS = Release for supply
Expected
status May
2011
Planned
release
Chapter
NEW: Wideband transistors

BFU610F
Gen6 wideband transistor
BFU630F
BFU660F
BFU690F
BFU710F
BFU730F
BFU760F
BFU790F
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
Released
Released
Released
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
NEW: AEC-Q101 qualified wideband MMICs and transistors

BGA2002
Low noise wideband amplifier MMIC
BFR94A
RF wideband transistor
BFR94AW
RF wideband transistor
RFS
RFS
RFS
Released
Released
Released
3.4.1
3.3.1
3.3.1
NEW: SiGe:C LNAs (for e.g. GPS)

BGU7005
SiGe:C MMIC, incl matching output for GPS LNA, 16.5 dB
BGU7007
GPS LNA, 18.5 / 19.5 dB gain
BGU7004
GPS LNA, 16.5 / 17.5 dB gain, AEC-Q100
BGU7008
GPS LNA, 18.5 / 19.5 dB gain, AEC-Q100
BGU7003W
General-purpose unmatched LNA for FM radio
RFS
RFS
RFS
RFS
CQS
Released
Released
Released
Released
Q2 2011
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
NEW: LNAs for set-up boxes

BGU7042
LNA for STB tuning
BGU7041
LNA for STB tuning
RFS
RFS
Released
Released
3.4.1
3.4.1
NEW: General purpose wideband amplifiers (50 gain blocks)

BGA2802
IF gain block 25 dB
BGA2803
IF gain block 23.4 dB
BGA2870
IF gain block 31 dB
RFS
RFS
RFS
Released
Released
Released
3.4.1
3.4.1
3.4.1
NEW: Medium power amplifier MMICs

BGA7124
Medium power amplifier, 24 dBm P1dB, leadless SOT908
BGA7024
Medium power amplifier, 24 dBm P1dB, leaded SOT89
BGA7127
BGA7027
Medium power amplifier, 27 dBm P1dB, leaded SOT89
BGA7130
RFS
RFS
RFS
RFS
DEV
Released
Released
Released
Released
Q4 2011
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
NEW: VGAs for wireless infrastructures

BGA7350
Dual IF VGA, control range 24 dB
BGA7351
Dual IF VGA , control range 28 dB
BGA7202
Tx RF VGA, 0.7 - 2.2 GHz
BGA7204
Tx RF VGA, 0.7 - 2.8 GHz
RFS
CQS
CQS
CQS
Released
Q3 2011
Q3 2011
Q3 2011
3.4.1
3.4.1
3.4.1
3.4.1
NEW: LNAs for wireless infrastructures

BGU7051
LNA 900 MHz
BGU7052
LNA 1.9 GHz
BGU7053
LNA 2.5 GHz
CQS
CQS
CQS
Q2 2011
Q2 2011
Q2 2011
3.4.1
3.4.1
3.4.1
New: LO generators for wireless infrastructures

BGX7300
Rx LO generator, 400 MHz to 3 GHz
DEV
Q4 2011
3.4.2
New: IQ modulators for wireless infrastructures

BGX7100
IQ modulator, OIP3 30 dB, NF 165 dBm/Hz, P < 1 W, 350 MHz
DEV
Q4 2011
3.4.2
New: Dual mixers for wireless infrastructures

BGX7220
Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz
BGX7221
Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 1.7G Hz to 2.7 GHz
DEV
DEV
Q4 2011
Q4 2011
3.4.2
3.4.2
Type
70
Application / Description
Planned
release
Chapter
NEW: Low noise LO generators for VSAT applications

TFF1007HN
Low noise LO generator for VSAT applications
TFF1008HN
Low noise LO generator for VSAT applications
RFS
RFS
Released
Released
3.4.4
3.4.4
NEW: RF satellite ICs

TFF1014HN
TFF1015HN
TFF1017HN
TFF1018HN
RFS
RFS
RFS
RFS
Released
Released
Released
Released
3.4.3
3.4.3
3.4.3
3.4.3
NEW: RF CATV modules

CGY1041
1 GHz, 21 dB gain push-pull, GaAs HFET SOT115
CGY1043
CGY1049
CGY1032
CGD1046Hi
1 GHz, 26 dB gain power doubler, GaAs HFET SOT115
BGO807CE
870 MHz, forward path optical receiver, SOT115
CGD982HCi
1 GHz, 22 dB gain GaAs high output power doubler
CGD985HCi
CGD987HCi
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
Released
Released
Released
Released
3.6.2
3.6.2
3.6.2
3.6.2
3.6.3
3.6.4
3.6.3
3.6.3
3.6.3
NEW: RF high-speed data converters

ADC1613D series
Dual 16-bit ADC up to 65/80/105/125 Msps
ADC1613S series
Single 16-bit ADC up to 65/80/105/125 Msps
ADC1610S series
ADC1415S series
ADC1413D series
ADC1413S series
ADC1412D series
ADC1410S series
ADC1215S series
ADC1213D series
ADC1213S series
ADC1212D series
ADC1210S series
ADC1207S080
Single 12-bit ADC 80 Msps
ADC1206S series
Single 12-bit ADC up to 40/55/70 Msps
ADC1115S125
Single 11-bit ADC up to 125 Msps
ADC1113D125
Dual 11-bit ADC up to 125 Msps
ADC1113S125
ADC1112D125
ADC1015S series
ADC1010S series
ADC1006S series
Single 10-bit ADC up to 55/70 Msps
ADC1005S060
ADC1004S series
Single 10-bit ADC 30/40/50 Msps
ADC1003S series
ADC1002S020
ADC0808S series
ADC0804S series
ADC0801S040
DAC1408D series
Dual 14-bit DAC up to 650/750 Msps
DAC1405D series
DAC1403D160
Dual 14-bit DAC 160 Msps
DAC1401D125
DAC1208D series
DAC1205D series
DAC1203D160
DAC1201D125
DAC1008D series
DAC1005D series
DAC1003D160
DAC1001D125
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
Q311
Q311
Q311
Q311
Q411
Q311
Q311
Q311
Q112
Q311
Q112
Q411
Q311
Q311
3.7.1.4
3.7.1.5
3.7.1.1
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.5
3.7.1.5
3.7.1.6
3.7.1.1
3.7.1.1
3.7.1.4
3.7.1.1
3.7.1.4
Satellite LNB downconverter IC

NEW: RF power transistors

BLF6G22LS-40P
Gen6 ceramic push-pull driver/final LDMOS transistor for WCDMA & LTE applications
BLF6G27LS-40P
Gen6 ceramic push-pull driver/final LDMOS transistor for LTE applications
BLF7G10LS-250
BLF7G21LS-160P
Gen7 ceramic push-pull LDMOS transistor for TD-SCDMA applications
BLF7G22LS-100P
Gen7 ceramic push-pull LDMOS transistor for WCDMA applications
BLF7G22LS-160
Gen7 ceramic LDMOS transistor for WCDMA applications
BLF7G24LS-160P
Gen7 ceramic push-pull LDMOS transistor for LTE applications
BLF7G27LS-200P
Gen7 ceramic push-pull LDMOS transistor for LTE applications
BLF7G38LS-90P
Gen7 ceramic push-pull LDMOS transistor for WiMAX applications
BLF8G10LS-160
BLF8G10LS-300P
Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications
BLM7G22S-60PG
Gen7 LDMOS MMIC for WCDMA applications (gull-wing)
BLP7G10S-140PG
BLP7G22-10
Gen7 OMP LDMOS transistor for WCDMA & GSM applications
Products by function
Expected
status May
2011
Type
71
Expected
status May
2011
Planned
release
Chapter
ceramic push-pull LDMOS transistor for FM broadcast applications

ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications
ceramic LDMOS driver transistor for broadcast/ISM applications
extremely rugged ceramic push-pull transistor for broadcast/ISM applications
extremely rugged ceramic push-pull LDMOS transistor for broadcast/ISM applications
Gen6 ceramic push-pull LDMOS transistor for broadcast applications
Gen6 ceramic push-pull LDMOS transistor for broadcast applications
Gen6 ceramic push-pull LDMOS transistor for broadcast/ISM applcations
Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications
Gen6 ceramic LDMOS transistor for ISM applications
Gen6 ceramic push-pull LDMOS transistor for digital broadcast applications
Gen6 OMP LDMOS transistor for broadcast/ISM applications
Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications
Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications
Gen7 LDMOS MMIC for 2.45 GHz ISM applications
Gen8 OMP LDMOS transistor for 2.45 GHz ISM applications
Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications
Gen7 ceramic LDMOS transistor for 2.45 GHz ISM applications
Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications
Gen8 OMP push-pull LDMOS transistor for 2.45 GHz ISM applications
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
CQS
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
Q211
Q112
Q411
Q211
Q411
Q311
Q311
Q111
Q311
now
Q112
Q411
Q112
Q112
Q411
Q411
Q311
Q311
Q211
Q112
Q112
Q411
Q112
Q411
Q311
Q311
Q311
Q411
Q112
Q311
Q311
Q311
Q312
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.2
3.7.2.2
3.7.2.2
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
DEV
DEV
DEV
DEV
DEV
DEV
RFS
DEV
DEV
3.7.3.1
3.7.3.1
3.7.3.2
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
Type
NEW: RF power broadcast and ISM transistors

BLF178P
BLF572P
BLF573P
BLF642
BLF647P
BLF278XR
BLF578XR
BLF879P
BLF884P
BLF888A
BLP05H6100P
BLP05H6500P
BLP05H650P
BLP09H620
BLP10H6120
BLP10H6300P
BLP10H6xx
BLF6G13LS-250P
BLF6G15LS-500H
BLP15M6100P
BLP15M630
BLP15M660P
BLP15M7150P
BLP15M7xx
BLP25M74
BLP25M710
BLF25M612
BLM2425M720
BLP2425M8140
BLF2425M6LS180P
BLF2425M7LS200
BLF2425M7LS250P
BLP2425M8250P
NEW: RF microwave transistors

BLA6H0912-1000
1000 W ceramic Avionics LDMOS transistor
BLA6G1011LS-200RG
Gull-wing ceramic Avionics LDMOS transistor
BLL6G1214L-250
Gen6 ceramic LDMOS transistor for L-band applications
BLS6G2731P-200
S-band pallet using 2x Gen6 ceramic LDMOS transistors
BLS6G2735LS-30
Gen6 ceramic LDMOS driver transistor for S-band radar applications
BLS7G2729LS-350P
Gen6 ceramic push-pull LDMOS transistor for S-band radar applications
BLS7G2933S-150
Gen7 ceramic LDMOS transistor for S-bad radar applcations
BLS6G2933P-200
S-band pallet using 2x Gen6 ceramic LDMOS transistors
BLS7G3135LS-350P
Gen6 ceramic push-pull LDMOS transistor for S-band radar applications
72
Q311
Q211
Q311
Q311
Q211
Q211
released
Q211
Q211
3.2
RF diodes
3.2.1 Varicap diodes
Varicap selection guide on www.nxp.com/varicaps

Easy-to-use parametric filters help you to choose
the right varicap for your design.
VCO and FM radio tuning varicap diodes

@ f = 1 MHz
Type
Package
Number
of
diodes
BB145B
BB156
BB198
BB199
BB201
BB202^^
BB202LX^^
BB207^
BB208-02^
BB208-03^
SOD523
SOD323
SOD523
SOD523
SOT23
SOD523
SOD882D
SOT23
SOD523
SOD323
1
1
1
1
2
1
1
2
1
1
Configuration
SG
SG
SG
SG
CC
SG
SG
CC
SG
SG
Cd
min
Cd
typ
Cd
max
@ VR
=
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
6.4
14.4
25
36.5
89
28.2
28.2
76
19.9
19.9
16
95
81
-
7.2
17.6
28.5
42.5
102
33.5
33.5
86
23.2
23.2
(V)
(pF)
(pF)
(pF)
1
1
1
0.5
1
0.2
0.2
1
1
1
2.55
4.2
4.8
11.8
25.5
7.2
7.2
25.5
4.5
4.5
4.8
27.6
27.6
-
2.95
5.4
6.8
13.8
29.7
11.2
11.2
29.7
5.4
5.4
^ = Including special design for FM car radio (CREST-IC:TEF6860).

^^ = Including special design for mobile phone tuner ICs.
rs
typ
rs
max
@f=
(V)
()
()
(MHz)
4
7.5
2
7.5
2.3
2.3
7.5
7.5
7.5
0.4
0.25
0.25
0.35
0.35
0.2
0.35
0.35
0.6
0.7
0.8
0.5
0.6
0.4
0.5
0.5
470
470
100
100
100
100
100
100
100
100
Cd1/
Cd2
max
@ V1
=
@ V2
=
(V)
Cd1/
Cd2
min
(V)
4
7.5
4
2
7.5
2.3
2.3
7.5
7.5
7.5
2.2
2.7
2.8
3.1
2.5
2.5
2.6
3.7
3.7
3.9
3.8
3.3
5.2
5.2
1
1
0.5
1
0.2
0.2
1
1
1

Type of connection:

CC:
SG:
Common Cathode
Single
TV / VCR / DVD / HDD varicap diodes - UHF tuning

@ f = 1 MHz
Type
Matched
BB149
BB149A
BB179
BB179B
BB179BLX
BB179LX
BB184
BB189
Unmatched
BB135
Package
SOD323
SOD323
SOD523
SOD523
SOD882D
SOD882D
SOD523
SOD523
SOD323
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
(V)
1.9
1.951
1.951
1.9
1.9
1.95
1.87
1.89
2.1
2.1
2.1
2.1
2.1
2
2.04
2.25
2.225
2.225
2.25
2.25
2.22
2.13
2.18
1.7
2.1
rs
typ
rs
max
@f=
@
Cd =
(V)
()
()
(MHz)
(pF)
1
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
0.6
0.6
0.6
0.65
0.65
0.65
0.65
0.75
0.75
0.75
0.75
0.7
470
470
470
470
470
470
470
470
9
9
9
9
9
30
9
9
0.5
28
0.75
470
@ V1
=
@ V2
=
(V)
10
10.9
10.9
10
10.9
12
Cd1/Cd2
min
Cd1/Cd2
typ
Cd1/Cd2
max
28
28
28
28
28
28
10
25
8.2
8.45
8.45
8.45
8.45
6
6.3
9
9
9
9
9
9
7
7.3
28
8.9
@ V1
=
@ V2
=
(V)
(V)
2
2
2
2
2
2
2
1.8
0.5
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
10
10
10
10
10
5
5
10
Cd/
Cd
@
Ns
=
Bold = Highly recommended product
73
Why choose NXPs varicap diodes:

`` Reference designs for TV and radio tuning
`` Direct matching process
`` Small tolerances
`` Short lead time
`` Complete portfolio covering broad frequency range and variety in package (including leadless)
`` Reliable volume supply
TV / VCR / DVD / HDD varicap diodes - VHF tuning

@ f = 1 MHz
Type
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
SOD323
SOD323
SOD323
SOD523
SOD882D
SOD523
SOD882D
SOD523
SOD882D
2.4
2.48
2.361
2.361
2.36
2.48
2.48
2.57
2.57
2.6
2.7
2.6
2.6
2.6
2.7
2.7
2.75
2.75
SOD323
SOD523
SOD882D
SOT23
0.7
0.7
0.7
4.3
Package
Matched
BB148
BB152
BB153
BB178
BB178LX
BB182
BB182LX
BB187
BB187LX
Unmatched
BB131
BB181
BB181LX
BBY40
rs
typ
rs
max
@f=
@ Cd
=
(V)
()
()
(MHz)
(pF)
1
1
1
1
1
1
1
2
2
28
28
28
28
28
28
28
25
25
1
0.65
0.65
0.7
1
1
-
0.9
1.2
0.8
0.8
1.2
0.75
0.75
100
100
100
100
470
100
100
470
470
12
30
30
30
30
30
30
-
0.5
0.5
0.5
3
28
28
28
25
2
-
3
3
0.7
470
470
470
200
9
9
9
25
Cd1/
Cd2
typ
Cd1/
Cd2
max
@ V1
=
@ V2
=
(V)
Cd1/
Cd2
min
(V)
2.75
2.89
2.754
2.754
2.75
2.89
2.89
2.92
2.92
28
28
28
28
28
28
28
25
25
14.5
20.6
13.5
13.5
13.5
20.6
11
11
15
22
15
15
15
22
22
-
1.055
1.055
1.055
6
28
28
28
25
12
12
5
14
-
16
16
6.5
@ V1
=
@ V2
=
(V)
(V)
2
2
2
2
2
2
2
2
2
0.5
1
1
1
1
1
1
2
2
28
28
28
28
28
28
28
25
25
10
10
10
10
5
10
10
10
10
Cd/
Cd
@ Ns
=
3.2.2 PIN diodes

Cd
(fF)
Pin diode selection guide on www.nxp.com/pindiodes

Easy-to-use parametric filters help you to choose the right
pin diode for your design.
brb407
700
600
BAP65LX
Freq = 100 MHz, Cd @ VR = 0 V

rD @ 0.5 mA
rD @ 10 mA
BAP65LX
500
400
BAP50LX
BAP63LX
BAP63LX
BAP1321LX
BAP51LX
BAP51LX BAP1321LX
BAP142LX
BAP142LX
300
200
BAP64LX
BAP70-02
100
Why choose NXPs PIN diodes:

} Broad portfolio
} Unrivalled performance
} Short lead time
} Low series inductance
} Low insertion loss
} Low capacitance
0
101
10
BAP50LX
BAP64LX
BAP70-02
102
rD ()
brb408
25
Freq = 1800 MHz, Isolation @ VR = 0 V

Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
Isolation
(dB)
20
BAP70-20
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
15
10
BAP65LX
0
102
BAP50LX
BAP70-02
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
BAP65LX
101
Insertion Loss (dB)
10
Look for more graphs showing the Pin diode line-up at other
frequencies on our web site: www.nxp.com/pindiodes
PIN diodes: typical rD @ 1 mA 2, switching diodes

@ f = 100 MHz
Type
BAP65LX
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP63LX
BAP63-02
BAP63-03
BAP63-05W
Package
SOD882D
SOD523
SOD323
SOT23
SOT323
SOD882D
SOD523
SOD323
SOT323
Number of
diodes
Conf
VR max
(V)
IF max
(mA)
1
1
1
2
2
1
1
1
2
SG
SG
SG
CC
CC
SG
SG
SG
CC
30
30
30
30
30
50
50
50
50
100
100
100
100
100
100
100
100
100

74
@ IF = 0.5 mA
@ IF = 1 mA
@ f = 1 MHz
@ IF = 10 mA
@ VR
=0V
@ VR = 1 V
@ VR = 20 V
rD
typ
()
rD
max
()
rD
typ
()
rD
max
()
rD
typ
()
rD
max
()
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
2.3
2.5
2.5
2.5
3.3
3.5
3.5
3.5
0.94
1
1
1
1
1.87
1.95
1.95
1.95
3
3
3
3
0.49
0.56
0.56
0.56
0.56
1.19
1.17
1.17
1.17
0.9
0.9
0.9
0.9
0.9
1.8
1.8
1.8
1.8
0.61
0.65
0.65
0.7
0.7
0.34
0.36
0.4
0.4
0.48
0.55
0.55
0.575
0.575
0.29
0.32
0.35
0.35
0.85
0.9
0.9
0.9
0.9
-
0.37
0.375
0.375
0.425
0.425
0.24
0.25
0.27
0.3
0.3
0.32
0.32
0.35
PIN diodes: typical rD @ 1 mA = 2.2 - 2.4, switching diodes

@ f = 100 MHz
Type
BAP55LX
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
Package
Number of
diodes
Conf
VR max
(V)
IF max
(mA)
SOD882D
SOD523
SOD323
SOT23
SOD882D
SOD882D
1
1
1
2
1
1
SG
SG
SG
SR
SG
SG
50
60
60
60
60
50
100
100
100
100
100
100
@ IF = 0.5 mA
rD
typ
()
3.3
3.4
3.4
3.4
3.3
3.3
rD
max
()
4.5
5
5
5
5
5
@ IF = 1 mA
rD
typ
()
2.2
2.4
2.4
2.4
2.4
2.4
rD
max
()
3.3
3.6
3.6
3.6
3.6
3.6
@ IF = 10 mA
rD
typ
()
0.8
1.2
1.2
1.2
1.2
1
rD
max
()
1.2
1.8
1.8
1.8
1.8
1.8
@ f = 1 MHz
@ VR
@ VR = 20 V
@ VR = 1 V
=0V
Cd
Cd
Cd
Cd
Cd
typ
typ
max
typ
max
(pF)
(pF)
(pF)
(pF)
(pF)
0.28
0.23
0.18
0.28
0.4
0.35
0.45
0.25
0.32
0.4
0.35
0.45
0.25
0.32
0.42
0.375
0.45
0.275 0.325
0.32
0.27
0.38
0.21
0.28
0.25
0.22
0.16
0.26
PIN diodes: typical rD @ 1 mA = 3.2 - 3.6, switching diodes

@ f = 100 MHz
Type
BAP51LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
Package
Number
of diodes
Conf
VR max
(V)
IF max
(mA)
SOD882D
SOD523
SOD323
SOT323
SOT323
SOT323
1
1
1
2
2
2
SG
SG
SG
SR
CC
CA
60
60
50
50
50
50
100
50
50
50
50
50
@ IF = 0.5 mA
rD
typ
()
4.9
5.5
5.5
5.5
5.5
5.5
rD
max
()
9
9
9
9
9
-
@ IF = 1 mA
rD
typ
()
3.2
3.6
3.6
3.6
3.6
3.6
rD
max
()
6.5
6.5
6.5
6.5
6.5
-
@ f = 1 MHz
@ IF = 10 mA
rD
typ
()
1.4
1.5
1.5
1.5
1.5
2
rD
max
()
2.5
2.5
2.5
2.5
2.5
-
@ VR
=0V
Cd
typ
(pF)
0.3
0.4
0.4
0.4
0.4
0.4
@ VR = 1 V
Cd
typ
(pF)
0.22
0.3
0.3
0.3
0.3
0.3
Cd
max
(pF)
0.4
0.55
0.55
0.55
0.55
-
@ VR = 20 V
Cd
typ
(pF)
0.17
0.2
0.2
0.2
0.2
0.2
Cd
max
(pF)
0.3
0.35
0.35
0.35
0.35
-
@ f = 100 MHz
Type
BAP64Q
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
Package
Number
of diodes
Conf
VR max
(V)
IF max
(mA)
4
1
1
2
2
2
2
2
2
SR
SG
SG
SR
SR
CC
CC
CA
CA
100
175
175
175
100
175
100
175
100
100
100
100
100
100
100
100
100
100
SOT753
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
@ IF = 0.5 mA
rD
typ
()
20
20
20
20
20
20
20
20
20
rD
max
()
40
40
40
40
40
40
40
40
40
@ IF = 1 mA
rD
typ
()
10
10
10
10
10
10
10
10
10
rD
max
()
20
20
20
20
20
20
20
20
20
PIN diodes: typical rD @ 1 mA = 10, attenuator/switching diodes

@ f = 1 MHz
@ VR =
0V
Cd
rD
max
typ
()
(pF)
3,8
0.52
3.8
0.48
3.8
0.48
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
@ IF = 10 mA
rD
typ
()
2
2
2
2
2
2
2
2
2
@ VR = 1 V
@ VR = 20 V
Cd
typ
(pF)
0.37
0.35
0.35
0.37
0.37
0.37
0.37
0.37
0.37
Cd
typ
(pF)
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
Cd
max
(pF)
-
Cd
max
(pF)
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
PIN diodes: typical rD @ 1 mA = 14 - 16, attenuator diodes

@ f = 100 MHz
Type
Package
Number
of diodes
BAP50-02
SOD523
BAP50-03
SOD323
BAP50-04
SOT23
BAP50-04W
SOT323
BAP50-05
SOT23
BAP50-05W
SOT323
BAP50LX
SOD882D
BAP64LX^
SOD882D
^ = attenuator / switching diode
1
1
2
2
2
2
1
1
Conf
SG
SG
SR
SR
CC
CC
SG
SG
*= @ VR = 20 V
VR max
(V)
IF max
(mA)
50
50
50
50
50
50
50
60
50
50
50
50
50
50
50
100
@ IF = 0.5 mA
rD
typ
()
25
25
25
25
25
25
26
31
rD
max
()
40
40
40
40
40
40
40
50
@ IF = 1 mA
rD
typ
()
14
14
14
14
14
14
14
16
rD
max
()
25
25
25
25
25
25
25
26
@ f = 1 MHz
@ VR =
@ IF = 10 mA
0V
Cd
rD
rD
max
typ
typ
()
()
(pF)
3
5
0.4
3
5
0.4
3
5
0.45
3
5
0.45
3
5
0.45
3
5
0.45
3
5
0.4
2.6
4.4
0.48
@ VR = 1 V
Cd
typ
(pF)
0.3
0.3
0.35
0.35
0.3
0.35
0.28
0.34
Cd
max
(pF)
0.55
0.55
0.6
0.6
0.5
0.6
0.55
-
@ VR = 5 V
Cd
typ
(pF)
0.22
0.2
0.3
0.3
0.35
0.3
0.19
0.17*
Cd
max
(pF)
0.35
0.35
0.5
0.5
0.6
0.5
0.35
0.3*
PIN diodes: typical rD @ 1 mA = 40, attenuator diodes

@ f = 100 MHz
Type
Package
Number
of diodes
Conf
VR max
(V)
IF max
(mA)
BAP70Q
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP70AM
SOT753
SOD523
SOD323
SOT323
SOT23
SOT363
4
1
1
2
2
4
SR
SG
SG
SR
CC
SR
50
50
50
50
50
50
100
100
100
100
100
100
Bold = highly recommended product

SG = Single
SR = Series
@ IF = 0.5
mA
rD
typ
()
77
77
77
77
77
77
rD
max
()
100
100
100
100
100
100
@ IF = 1 mA
rD
typ
()
40
40
40
40
40
40
rD
max
()
50
50
50
50
50
50
@ f = 1 MHz
@ IF = 10 mA
rD
typ
()
5.4
5.4
5.4
5.4
5.4
5.4
rD
max
()
7
7
7
7
7
7
@ VR
=0V
Cd
typ
(pF)
0.6
0.57
0.57
0.6
0.6
0.57
@ VR = 1 V
@ VR = 20 V
Cd
typ
(pF)
0.43
0.4
0.4
0.43
0.43
0.4
Cd
max
(pF)
0.25
0.2
0.2
0.25
0.25
0.2
Cd
max
(pF)
-
Cd
typ
(pF)
0.3
0.25
0.25
0.3
0.3
0.25
CC = Common Cathode
CA = Common Anode
75
3.2.3 Band switch diodes

Why choose NXPs band switch diodes
`` Reliable volume supplier
`` Short lead time
`` Low series inductance
`` Low insertion loss
`` Low capacitance
`` High reverse isolation
Type
Package
VR max
(V)
IF max
(mA)
rD max
()
@ IF =
(mA)
@f=
(MHz)
Cd max
(pF)
@ VR =
(V)
@f=
(MHz)
BA277
BA591
BA891
BAT18
SOD523
SOD323
SOD523
SOT23
35
35
35
35
100
100
100
100
0.7
0.7
0.7
0.7
2
3
3
5
100
100
100
200
1.2
0.9
0.9
1
6
3
3
20
1
1
1
1
3.2.4 Schottky diodes

Schottky diode selection guide on www.nxp.com/rfschottkydiodes
Easy-to-use parametric filters help you to choose the right schottky
diode for your design.
Why choose NXPs schottky diodes

`` Low diode capacitance
`` Low forward voltage
`` Single- and triple-isolated diode
`` Small package
Applications
} Digital applications:
- Ultra high-speed switching
- Clamping circuits
} RF applications:
- Diode ring mixer
- RF detector
- RF voltage doubler
Low capacitance schottky diodes
Type
BAT17
PMBD353
PMBD354^
1PS76SB17
1PS66SB17
1PS79SB17
1PS88SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS66SB82
1PS10SB82
Package
Configuration
SOT23
SOT23
SOT23
SOD323
SOT666
SOD523
SOT363
SOT323
SOT323
SOT323
SOT323
SOT666
SOD882
single
dual series
dual series
single
triple isolated
single
triple isolated
single
dual series
dual c.c
dual c.a.
triple isolated
single
Bold = highly recommended product
76
VR max.
(V)
4
4
4
4
4
4
15
15
15
15
15
15
15
IF max.
(mA)
30
30
30
30
30
30
30
30
30
30
30
30
30
^ Diodes have matched capacitance
VF max.
(mV)
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
CD max.
(pF)
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
3.3
RF Bipolar transistors
3.3.1 Wideband transistors

RF wideband transistor selection guide on www.nxp.com/rftransistors
Easy-to-use parametric filters help you to choose the right RF wideband
transistor for your design.
Why choose NXPs wideband transistors

st
th
`` Broad portfolio (1 - 7 generation)
`` Short lead time
`` Smallest packages
`` Volume delivery
Wideband transistors
The fT-IC curve represents Transition Frequency (fT)
characteristics as a function of collector current (IC) for the six

generations of RF wideband transistors. A group of transistors
having the same collector current (IC) and similar transition
frequencies (fT) represents a curve. The curve number matches
products in the table, detailing their RF characteristics.
Wideband transistors line-up per frequency

bra510
100
(33)
(37)
fT
(GHz)
7th generation
(39)
(35)
(27)
(26)
(29)
(25)
(36)
10
(31)
(20)
(30)
(38)
(40)
4th generation
(23)
(22)
(21)
(19)
(34)
(15)
(14)
(16)
(18)
3rd generation
(11)
(7)
(9)
(8)
(12)
(10)
2nd generation
(4)
(1)
1
0.1
0.5
0.2
(3)
1st generation
10
20
Pin
2
Figure 1
6th generation
5th generation
(32)
(41)
1
2
3
4
1
2
3
4
1
Figure 2
1
2
3
4
50
100
200
500
IC (mA)
1000
Description
Type (see Fig.1)
collector
base
emitter
emitter
Type/X (see Fig.1)
collector
emitter
base
emitter
Type/XR (see Fig.2)
collector
emitter
base
emitter
77
Wideband transistors (RF small signal)
GUM (typ)
(dB)
400
400
400
2000
2100
2000
2000
NPN
NPN
NPN
NPN
NPN
NPN
NPN
7
7
7
-
@ VCE = (V)
Polarity
250
250
250
500
250
250
500
@ IC = (mA)
P tot (max)
(mW)
8
8
10
10
8
10
9.5
SOT143
SOT143
SOT343
SOT223
SOT223H
SOT223
SOT223
@ f = (MHz)
IC (max)
(mA)
BFG10
BFG10/X
BFG10W/X
BLT50
BLT70
BLT80
BLT81
VCEO (max)
(V)
Type
Package
RF power transistors for portable equipment (VHF)
1900
1900
1900
-
1
1
1
-
3.6
3.6
3.6
-
@ IC = (mA)
@ VCE = (V)
1000
0.5
1
1.8
0.5
1
2
0.5
1
2
-70 -10
100 10
15 10
2
70 10
- 3.75
50 10 3.3
30
6
3.5
15 10
3
15 10
2
14 10 2.5
0.5
1
1.8
0.5
1
1.8
2.5
-15 -10 2.5
2.4
-30 -5 2.4
1000
1000
1000
1000
500
500
800
2000
1000
800
1000
1000
500
500
500
500
0.5
1
1
5
-50
50
30
5
5
2
1
0.5
-5
-5
-10
-10
1
1
1
10
-10
10
6
10
10
5
1
1
-10
-10
-5
-5
3
2.1
3
3
3
2000
1000
2000
1000
1000
5
5
5
-5
-10
10
10
10
-10
-5
800
800
2000
2000
2000
2000
2000
2000
2000
1000
2000
2000
2000
2000
2000
2000
2000
100
50
80
80
70
15
15
30
30
45
70
15
30
30
30
30
30
1000
1000
1000
1000
500
1000
1000
1000
1000
1000
1000
15
15
5
5
45
5
5
5
5
5
5
8
8
8
8
10
8
8
8
8
8
8
2.5
2.5
2.3
2.3
3
2.7
3
3
3
2.1
2.1
2000
2000
2000
2000
1000
2000
2000
2000
2000
2000
2000
5
5
5
5
45
15
5
5
5
5
5
8
8
8
8
10
8
8
8
8
8
8
SOT23
SOT323
SOT23
1
1.6
2.3
15
15
5
25 300 NPN
50 300 NPN
6.5 30 NPN
BFG25A/X
BFG25AW
BFG25AW/X
BFG31
BFG35
BFG92A/X
BFG97
BFQ149
BFQ18A
BFQ19
BFR106
BFR92A
BFR92AW
BFS17A
BFS25A
BFT25A
BFT92
BFT92W
BFT93
BFT93W
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
18
18
18
10
11
7
10
10
11
10
10
7
7
4
18
18
7
7
9
9
SOT143B
5
SOT343N 5
SOT343N 5
SOT223
5
SOT223
4
SOT143B
5
SOT223
5.5
SOT89
5
SOT89
4
SOT89
5.5
SOT23
5
SOT23
5
SOT323
5
SOT23
2.8
SOT323
5
SOT23
5
SOT23
5
SOT323
4
SOT23
5
SOT323
4
5
5
5
-15
18
15
15
-15
18
15
15
15
15
15
5
5
-15
-15
-12
-12
6.5
6.5
6.5
-100
150
25
100
-100
150
100
100
25
25
25
6.5
6.5
-25
-35
-35
-50
32
500
500
1000
1000
400
1000
1000
1000
1000
500
300
300
300
32
32
300
300
300
300
NPN
NPN
NPN 16 1000 0.5
PNP 16 500 -70
NPN 15 500 100
NPN 16 1000 15
NPN 16 500 70
PNP 12 500 -50
NPN
NPN 11.5 500 50
NPN
NPN 14 1000 15
NPN 14 1000 15
NPN
NPN
NPN
PNP 18 500 -14
PNP 17 500 -15
PNP 16.5 500 -30
PNP 15.5 500 -30
18
16
1
8
-10 12
10 11
10 11
10 12
-10
10 7.5
- 11.5
10
8
10
8
- 13.5
13
15
-10
-10 11
-5
-5 10
1000
2000
2000
800
800
2000
800
800
800
2000
2000
800
1000
1000
1000
BFG135
BFG198
BFG590
BFG590/X
BFG591
BFG67
BFG67/X
BFG93A
BFG93A/X
BFG94
BFQ591
BFQ67W
BFR93A
BFR94A^
BFR93AR
BFR93AW
BFR94AW^
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
16
15
22
22
22
14
14
8
8
8
22
14
8
8
8
8
8
SOT223
SOT223
SOT143B
SOT143B
SOT223
SOT143B
SOT143B
SOT143B
SOT143B
SOT223
SOT89
SOT323
SOT23
SOT23
SOT23
SOT323
SOT323
15
10
15
15
15
10
10
12
12
12
15
10
12
12
12
12
12
150
100
200
200
200
50
50
35
35
60
200
50
35
35
35
35
35
1000
1000
400
400
2000
380
380
300
300
700
2250
300
300
300
300
300
300
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
10
8
4
4
12
8
8
8
8
12
8
8
8
8
8
8
7
8
5
5
7
8
8
6
6
6
7
8
6
6
6
5
5

Bold Red = New, highly recommended product
78
Polarity
3
3
1
Type
1st
1st
1st
16
18
13
13
13
17
17
16
16
11
13
13
13
13
13
13
500
500
900
900
900
1000
1000
1000
1000
900
1000
1000
1000
1000
1000
1000
100
50
80
80
70
15
15
30
30
70
15
30
30
30
30
30
12
15
7.5
7.5
7.5
10
10
10
10
13.5
5.5
8
7
7
7
8
8
10
8
4
4
12
8
8
8
8
10
12
8
8
8
8
8
8
1.7
1.7
1.7
1.7
2.7
1.3
1.9
1.9
1.9
1.5
1.5
NF (typ) (dB)
BFS17
BFS17W
BFT25
NF (typ) (dB)
IC (max) (mA)
5
5
1
VCEO (max) (V)
2
2
1
f T (typ) (GHz)
500
500
500
Package
4.5
4.5
3.8
Curve
@ VCE = (V)
@ f = (MHz)
800
@ IC = (mA)
GUM (typ) (dB)

12
@ f = (MHz)
@ VCE = (V)
1
@ VCE = (V)
@ IC = (mA)
1
@ IC = (mA)
@ f = (MHz)
500
@ f = (MHz)
GUM (typ) (dB)

18
Generation
P tot (max) (mW)
RF wideband transistors generation 1 - 3
IP3 (typ) (dBm)
@ IC = (mA)
@ VCE = (V)
@ IC = (mA)
@ VCE = (V)
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
20
15
5
5
20
20
40
5
20
40
15
30
15
15
30
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
6
6
6
6
8
6
6
8
6
6
6
6
6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.1
1.1
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.1
1.2
1.9
1.7
1.2
1.2
1.1
1.1
1.3
1.2
1.1
1.3
1.4
1.3
1.5
1.5
1.3
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
1000
900
900
900
900
900
900
900
900
1000
1000
1000
1000
1000
5
5
5
5
5
20
20
20
5
5
10
10
10
10
10
10
10
1
5
40
15
5
1.25
5
5
10
1.25
5
10
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
8
6
6
6
6
8
6
6
8
6
6
6
6
6
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.85
1.85
2.1
2.1
2.1
2.1
2.1
2.1
2.1
1.9
1.9
2.7
1.9
1.9
1.9
1.9
2.1
1.9
1.9
2.1
2
2
2.1
2.1
1.8
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
1.25
1.25
1.25
1.25
1.25
5
5
5
5
5
10
10
10
10
10
10
10
5
5
15
5
1.25
5
5
10
1.25
5
10
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
6
6
6
6
8
6
6
8
6
6
6
6
6
4
4
4
4
4
17
17
17
17
17
21
21
21
21
21
21
21
4
5
17
17
21
4
17
21
-
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
6
6
6
6
8
6
6
8
-
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
-
NPN 18
NPN 18
NPN 18.3
NPN 18.3
1800
1800
1800
1800
5
5
15
15
3
3
3
3
1
1
1.1
1.1
2000
2000
2000
2000
1
1
3
3
3
3
3
3
1.8
1.8
8.7
8.7
3
3
3
3
1800 5
1800 5
1800 15
1800 15
PL(1dB) (typ) (dBmW)
900
900
900
900
900
900
1
1
2
2
2
8
2
2
2
2
2
2
1.6
1.2
1.2
1.2
1.2
1.8
2000
2000
2000
2000
2000
2000
1
1
2
2
2
8
2
2
2
2
2
2
5
1
5
2
12 2
12 2
12 2
20 3.6
900
1
6
1
2000 10 15 10
2000 25 22 25
2000 25 22 25
2000 25 22 25
2000 1 28 80
1
2
2
2
2
2
5800
2400
1500
1500
12000
5800
5800
2400
2400
8
25
60
90
8
25
25
60
90
2
2
2
2
2
2
2
2
2
0.75
0.58
0.6
0.7
0.9
0.47
0.56
0.5
0.56
2400
1500
1500
1500
5800
2400
2400
1500
1500
1
5
20
50
2
5
5
20
50
2
2
2
2
2
2
2
2
2
1.4 5800 1
0.73 2400 5
0.75 2400 20
0.9 2400 50
1.7 12000 2
0.7 5800 5
1
5800 5
0.6 2400 20
0.7 2400 50
2
2
2
2
2
2
2
2
2
8
-
- 14 8
- 23 25
- 30 60
- 35 90
- 14.5 8
5800 25 19 25
- 20.5 25
- 23 60
- 24 90
5
5
5
5
2
2
2
2
2
2
-
IP3 (typ) (dBm)
1
0.9
0.8
0.8
0.8
1.2
@ IC = (mA)
3.6
2
2
2
2
2
2
@ f = (MHz)
1
3
10
25
25
25
80
@ VCE = (V)
@ VCE = (V)
1900
2000
2000
2000
2000
2000
2000
NF (typ) (dB)
10
22
21
23
22
20
16
NF (typ) (dB)
@ IC = (mA)
NPN 21
NPN 28
NPN 28.5
NPN 25.6
NPN 16.5
NPN 18
NPN 20.3
NPN 25
NPN 20.4
@ f = (MHz)
50
130
200
300
30
136
130
200
250
@ VCE = (V)
5
10
5
30
5
70
5 100
2.8 10
2.8 40
2.8 30
2.8 70
2.8 100
@ IC = (mA)
40
40
40
40
70
70
70
70
70
@ f = (MHz)
NPN
NPN
NPN
NPN
NPN
NPN
NPN
@ VCE = (V)
600
16
54
135
135
135
360
@ IC = (mA)
4.5 500
4.5 3.6
4.5 12
4.5 30
4.5 30
4.5 30
4.5 250
@ f = (MHz)
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
17
22
25
25
25
21
GUM (typ) (dB)
34
35
36
37
38
33
39
40
41
Polarity
6th
6th
6th
6th
7th
7th
7th
7th
7th
P tot (max) (mW)
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
SOT343R
SOT343R
SOT343R
SOT343F
SOT343R
SOT343R
SOT343R
IC (max) (mA)
32
25
26
27
27
27
29
VCEO (max) (V)
Curve
5th
5th
5th
5th
5th
5th
5th
f T (typ) (GHz)
Generation
BFG21W
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
Package
Type
RF wideband transistors generation 5 - 7
79
@ IC = (mA)
3
3
3
3
@ f = (MHz)
5
5
15
15
@ VCE = (V)
PL(1dB) (typ) (dBmW)
8.5
8.5
19.4
19.4
@ VCE = (V)
60
60
210
210
@ IC = (mA)
10
10
35
35
@ f = (MHz)
6
6
6
6
14
14
14
14
13
13
12
12
12
13
13
13
11
11
11
11
11
10
10
10
9
10
9
8
10
10
9
9
7
10
9
8
9.5
8
10
10
9.2
NF (typ) (dB)
SOT143R
SOT343R
SOT143R
SOT343R
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
6
6
6
6
8
6
6
8
-
@ VCE = (V)
30
30
31
31
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
5
20
20
40
5
20
40
-
@ IC = (mA)
4.5
4.5
4.5
4.5
10
10
10
10
10
26
26
26
26
26
34
34
34
34
34
34
34
10
10
26
26
34
10
26
34
-
@ f = (MHz)
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
5
20
20
40
5
20
40
-
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NF (typ) (dB)
150
150
500
500
500
300
300
300
500
500
400
400
400
500
500
500
650
500
1000
1,200
300
150
150
300
150
500
150
300
500
360
365
250
150
270
@ VCE = (V)
18
18
18
18
18
70
70
70
70
70
120
120
120
120
120
120
120
18
70
120
50
18
18
70
70
120
18
70
120
50
100
50
50
100
@ IC = (mA)
P tot (max) (mW)
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
8
8
15
10
15
15
15
15
15
15
15
15
10
10
10
10
10
@ f = (MHz)
IC (max) (mA)
SOT143B 9
SOT143B 9
SOT343N 9
SOT343N 9
SOT343R 9
SOT143B 9
SOT143B 9
SOT143R 9
SOT343N 9
SOT343N 9
SOT143B 9
SOT143B 9
SOT143R 9
SOT343N 9
SOT343N 9
SOT343R 9
SOT223
9
SOT363A 9
SOT363A 9
SOT89
9
SOT23
8
SOT23
9
SOT416
9
SOT23
9
SOT416
9
SOT23
9
SOT323
9
SOT323
9
SOT323
9
SOT23
8
SOT23
8
SOT323
8.5
SOT416
9
SOT323
8.5
GUM (typ) (dB)
VCEO (max) (V)
19
19
19
19
19
20
20
20
20
20
21
21
21
21
21
21
21
19
20
21
14
19
19
20
20
21
19
20
21
20
21
20
20
21
Polarity
Curve
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
f T (typ) (GHz)
Generation
BFG505
BFG505/X
BFG505W
BFG505W/X
BFG505W/XR
BFG520
BFG520/X
BFG520/XR
BFG520W
BFG520W/X
BFG540
BFG540/X
BFG540/XR
BFG540W
BFG540W/X
BFG540W/XR
BFG541
BFM505
BFM520
BFQ540
BFQ67
BFR505
BFR505T
BFR520
BFR520T
BFR540
BFS505
BFS520
BFS540
PBR941
PBR951
PRF947
PRF949
PRF957
Package
Type
RF wideband transistors generation 4 - 4.5
3.4
RF ICs
3.4.1 RF MMIC amplifiers and mixers

RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics
Easy-to-use parametric filters help you to choose the right zRF MMIC for your design.
Why choose NXP's RF MMIC amplifiers and mixers
`` Reduced RF component count
`` Easy circuit design-in
`` Reduced board size
`` Short time-to-market
`` Broad portfolio
`` Volume delivery
`` Short lead time
General purpose wideband amplifiers (50 )
@
Type
Package
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGA2712
BGM1011
BGM1012
BGM1013
BGM1014
BGA2714
BGA2715
BGA2716
BGA2717
Notes:
(1)
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Vs
(V)
5
3
3
5
5
5
5
3
5
5
3
5
5
5
Fu(1)
Is
@-3 dB
(mA) (GHz)
12.6
3.6(2)
5.7
1.9
33.3
2.4
24.4
2.8
23.5
3.6
12.3
3.2
25.5
3.6
14.6(2)
27.5
2.1
2.5
21.0 (2)
4.58
2.7
3.3
4.3(2)
3.2
15.9(2)
8.0
3.2
Upper -3 dB point, to gain at 1 GHz.
(2)
NF
(dB)
4.8
1.9(2)
4.5
4.9
4.0
3.9
4.7
4.8
4.6
4.2
2.2
2.6
5.3
2.3(2)
Psat
(dBm)
2.8
-2.3
13.2(2)
10.5
12.5
4.8
13.8
9.7
14.0
12.9
-3.4
-4.0
11.6
1.4
@ 1 GHz
Gain(2)
(dB)
13.1
21.8
21.4
23.2(2)
22.7
21.3
30 (2)
20.1
35.5(2)
32.3
20.4
21.7
22.9
23.9
Optimized parameter
(3)
P1dB
OIP3
(dBm) (dBm)
-0.7
8.3
-9.2
-1.9
12.1
21.9
7.2
18.6
8.3
22
0.2
11
12.2
23
5.6
18
12.0
22.7
11.2
20.5
-7.9
2.1
-8.0
2.3
8.9
22.2
-2.6
10.0
100
MHz
13.0
14.8
20.3
22.4
22.2
20.8
25.0
19.5
35.2
30.0
20.8
13.3
22.1
18.6
Gain(3) (dB) @
2.2
2.6
GHz
GHz
14.1
13.8
17.6
15.0
20.4
17.9
23.2
21.8
23.0
22.1
21.9
21.2
37.0
32.0
20.4
19.9
31.8
29.7
34.1
30.5
20.8
19.4
23.3
22.1
22.8
22.1
25.1
24.0
3.0
GHz
12.7
11.9
15.5
19.3
21.1
19.3
28.0
18.7
26.1
26.4
16.8
20.1
20.8
22.1
Vs
(V)
6
4
4
6
6
6
6
4
6
6
4
6
6
6
Limits
Is
(mA)
20
15
50
34
35
25
35
50
35
30
10
8
25
15
P tot
(mW)
200
200
200
200
200
200
200
200
200
200
200
200
200
200
Gain = |S21|2
New general purpose wideband amplifiers (50 )

@
Type
Package
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGA2802
BGA2803
BGA2870
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Vs
(V)
3.3
3.3
3.3
3.3
5
5
5
3.3
3
2.5
Fu
Is
@-3 dB
(mA) (GHz)
9.7
>3
12.4
3
16.4
>3
19.6
2.3
7.7
>3
22.7
2.6
15.4
>3
13
2.8
5.8
2.8
16
1.7
NF
(dB)
3.4
3.6
3.4
2.8
3.9
3.7
3.6
4.1
3.6
3.7
@ 1 GHz
Gain
(dB)
20.2
22.1
25.4
31.2
23.3
31.9
23.4
25.8
23.5
31
OIP3
(dBm)
11.5
13.6
18.2
16.1
8.7
20.9
17.7
16
5
12
250
(MHz)
20
22.3
26.2
32
22.9
31.2
23
25
23.6
31
Gain (dB) @
950
1550
(MHz) (MHz)
20.2
20.6
22.1
23
25.4
25.5
31.2
30.6
23.2
23.9
31.8
32.6
23.3
24
25
25
23.4
23.2
31#
2150
(MHz)
20.6
23.8
25.8
28.7
24
31.4
24.3
25.5
23
-
# = Gain at 750 MHz

No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
General purpose low noise wideband amplifiers

@
Type
Package
BGA2001
BGA2002^
BGA2003
BGA2011
BGA2012
Notes:
(1)
MSG
SOT343R
SOT343R
SOT343R
SOT363
SOT363
(2)
Adjustable bias
Vs
(V)
2.5
2.5
2.5
3
3
(3)
Is
(mA)
4
4
10 (2)
15
7
NF
(dB)
1.3
1.3
1.8
1.5
-
|S21|2

80
@ 900 MHz
Gain
IIP3
(dB) (dBm)
-7.4
22(1)
-7.4
22(1)
24 (1)
-6.5
10
19(3)
-
@1800 MHz
NF
Gain
IIP3
(dB)
(dB) (dBm)
1.3
19.5(1)
-4.5
1.3
19.5(1)
-4.5
1.8
16(1)
-4.8
10
1.7
16(3)
100
(MHz)
20
20
26
24
22
Gain(3) (dB) @
1
2.6
(GHz) (GHz)
17.1
11.6
17.1
11.6
18.6
11.1
14.8
8
18.2
11.6
3.0
(GHz)
10.7
10.7
10.1
6.5
10.5
Vs
(V)
4.5
4.5
4.5
4.5
4.5
Limits
Is
(mA)
30
30
30
30
15
Ptot
(mW)
135
135
135
135
70
SiGe:C LNAs (for e.g. GPS)

@ 1.575 GHz
Supply
voltage
Type
Package
Supply current
Insertion
power gain
Vcc
Icc
|s21|2
NF
PI(1 dB)
IP3i
(V)
(mA)
(dB)
(dB)
(dBm)
(dBm)
Min
Max
Min
Typ
BGU7003
SOT891
2.2 2.85
3
BGU7003W
SOT886
2.2 2.85
3
BGU7004^
SOT886
1.5 2.85
BGU7005
SOT886
1.5 2.85
BGU7007
SOT886
1.5 2.85
BGU7008^
SOT886
1.5 2.85
^AEC-Q101 qualified (some limitations apply)
Max
Min
Typ
Noise
figure
Max
Input power at 1 dB gain

compression
Vcc =
1.8 V,
Min
Typ
Vcc =
1.8 V,
Typ
15
16
18.3
20
0.8
15
16
18.3
20
0.8
4.5
16.5*
0.9
-14
4.5
16.5*
0.9
-14
4.8
18**
0.9
-14
4.8
18**
0.9
-14
* = 16.5 dB without jammer / 17.5 dB with jammer
Vcc =
2.5 V,
Icc =
5 mA
Input third-order intercept point

f1 = 1713 MHz, f2 = 1851 MHz
Vcc =
1.8 V,
Min
Vcc =
Vcc =
2.85 V, 2.85 V,
Typ
Min
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
1.8 V,
Typ
Vcc =
2.85 V,
Min
Vcc =
2.85
V,
Typ
5
5
5
5
12
12
12
12
-20
0
-20
0
-11
-11
-8
5
9
-11
-11
-8
5
9
-11
-11
-8
5
9
-11
-11
-8
5
9
** = 18.5 dB without jammer / 19.5 dB with jammer
Type
Frequency
range
Package
Mode
(MHz)
BGU7033
SOT363
40 - 1000
BGU7032
SOT363
40 - 1000
BGU7031
BGU7041
SOT363
SOT363
40 - 1000
40 - 1000
BGU7042
SOT363
40 - 1000
Notes: (1) Gain = Programmable gain (GP)
(2)
GP 10 dB
GP 5 dB
Bypass
GP 10 dB
Bypass
GP 10 dB
GP 10 dB
GP 10 dB
Bypass
Gain (1)
NF
PL(1dB)
OIP3
FL (2)
RLout
RLin
(mA)
(dB)
(dB)
(dBm)
(dBm)
(dB)
(dB)
(dB)
43
43
4
43
4
43
38
38
3
10
5
-2
10
-2
10
10
10
-2
4.5
6
2.5
4.5
2.5
4.5
4
4
2.5
14
9
10
13
10
13
12
12
-
29
29
29
29
29
29
29
29
29
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
12
12
8
12
8
12
12
12
10
18
17
8
18
8
18
21
21
10
VCC
ICC
(V)
5
5
5
5
5
5
3.3
3.3
3.3
LNAs for set-top boxes (75 )
Flatness of frequency response = FL
LNAs for wireless infrastructures (50 )

Type
BGU7051
BGU7052
BGU7053
Package
Vsupply (typ)
@ IC =
@f=
(V)
3.3
3.3
3.3
(mA)
65
65
65
(MHz)
900
1900
2500
SOT650
SOT650
SOT650
Gass (typ) NF (typ) PL(1dB) (typ) OIP3 (typ)

(dB)
20.9
20.1
20
(dB)
0.7
0.9
1
IRL
ORL
(dB)
22
20
20
(dB)
15.8
15
15
(dBm)
17.8
18
18
(dBm)
34
35.5
35
@1800 MHz
Gain(2) OIP3
PL(1dB)
Gain(2)
2.5
Vs (1)
Limits
Is
Ptot
(dBm)
15
17
20
GHz
12
15
15
(V)
6
6
6
(mA)
120
120
120
(mW)
480
480
480
General purpose medium power amplifiers (50 )

@
Type
BGA6289
BGA6489
BGA6589
Notes:
(1)
@ 900 MHz
Gain(2) OIP3
Package
Vs (1)
Is
NF
SOT89
SOT89
SOT89
(V)
4.1
5.1
4.8
(mA)
84
78
81
(dB)
3.5
3.1
3.0
Device voltage without bias resistor.
(2)
(dB)
15
20
22
(dBm)
31
33
33
PL 1dB
NF
(dBm)
17
20
21
(dB)
3.7
3.3
3.3
(dB)
13
16
17
(dBm)
28
30
32
Gain = |S21|2
General purpose medium power amplifiers for all 400 - 2700 applications (50 )
supply
Type
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
Package
SOT908
SOT89
SOT908
SOT89
SOT908
leadless
leaded
leadless
leaded
leadless
f
(MHz)
400 - 2700
400 - 2700
400 - 2700
400 - 2700
400 - 2700
Vcc
Icc
Typ
(V)
5
5
5
5
5
Typ Max
(mA) (mA)
130
200
110
180
325
170
-
shutdown control
VI(D)L(SHDN)
Min
(V)
0
0
0
Max
(V)
0.7
0.7
0.7
VI(D)H(SHDN)
Min
(V)
2.5
2.5
2.5
Max
(V)
Vbias
Vbias
Vbias
RF performance
RF performance
II(D)L(SHDN)
Typ @ f = 940 MHz
Typ @ f = 1960 MHz
Typ
(A)
4
4
4
Gp PL(1dB) OIP3 NF
(dB) (dBm) (dBm) (dB)
22
25
38
5
22
24
38
3
20
28
44
3
19
28
41
3
18
30
45
4
Gp PL(1dB) OIP3 NF
(dB) (dBm) (dBm) (dB)
16
24
38
5
16
25
38
4
13
28
43
5
12
28
43
4
12
30
45
4
81
VGAs for wireless infrastructures

Vsup
Isup
frequency
(V)
(mA)
710
Parallel, serial
160
(MHz)
700 1450
1450 2200
700 2750
1450 2100
2100 2750
Parallel, digital
240
Package
Control interface
BGA7202
SOT617
Analog
BGA7204
SOT617
BGA7350
BGA7351
SOT617
Type
Gain @ minimum attenuation @ maximum attenuation

range
Gain
OIP3
NF
Gain
OIP3
NF
(dB)
(dB)
(dBm)
(dB)
(dB)
(dBm)
(dB)
23
23
41
7
0
30
30
23
23
41
7
0
30
30
31.5
24
37
6.5
-7.5
19
38
30.5
17
36
6.5
-13.5
10
38
29.5
16
34
7.5
-13.5
10
38
24
18.5
44
6
-5.5
50
30
28
22
45
6
-6
50
34
50 250
BGA7350 and BGA7351 are dual, independently controlled, receive IF VGAs on one chip.
2-stage variable gain linear amplifier

@
Type
BGA2031/1
Notes:
SOT363
Gain = GP, power gain.
(1)
Vs
(V)
3
Package
(2)
Frequency
Gain(1)
Range
(dB)
800-2500
24
Is
(mA)
51
@ 900 MHz
DG(2)
P1dB
(dB)
(dBm)
62
11
ACPR
(dBc)
49
@1900 MHz
DG(2)
P1dB
(dB)
(dBm)
56
13
ACPR
(dBc)
49
@1900 MHz
NF Gain(1) OIP3
(dB)
(dB) (dBm)
9
6
10
Vs
(V)
4
Gain(1)
(dB)
23
Vs
(V)
3.3
Limits
Is
(mA)
77
P tot
(mW)
200
DG = Gain control range
Wideband linear mixer

@
Type
BGA2022
Notes:
Vs
(V)
3
Package
SOT363
Gain = GP, power gain.
(1)
(2)
RF Input
Frequency
Range
800 - 2500
Is
(mA)
6
IF Output
Frequency
Range
50 - 500
NF
(dB)
9
@ 880 MHz
Gain(1) OIP3
(dB) (dBm)
5
4
Limits
Is
(mA)
10
Ptot
(mW)
40
DG = Gain control range
3.4.2 Wireless infrastructure ICs

Low noise LO generator for wireless infrastructures
fIN(REF)
Type
VCC
ICC
Noise 1 MHz offset

@5.3 GHz
Package
BGX7300*
SOT617
Output buffer
(Po)
Typ
Typ
Typ
Typ
(MHz)
(V)
(mA)
(dBc/Hz)
(dBm)
10-160
3.3
140
-131
-10
IQ modulator for wireless infrastructures
Type
Output
Voltage gain
Bandwidth of
IQ modulator
VCC
ICC
NFL (Output noise floor)
OIP3
GV
(MHz)
(V)
(mA)
(dBm/Hz)
(dBm)
(dB)
650
180
-159
27
1.5
Second order
spur rejection
(2RF-2LO)
VCC
ICC
NFssb (small
signal
noise figure)
IIP3
Conversion gain
(dBc)
(V)
(mA)
(GHz)
(dB)
(dBm)
(dB)
60
380
0.7 - 1.2
10
26
7.5
60
380
1.7 - 2.7
10
26
8.5
Package
BGX7100*
SOT616
Dual mixer for wireless infrastructures
Type
Package
BGX7220*
SOT617
SOT617
BGX7221*
Frequency
range
3.4.3 Satellite LNB RF ICs
Type
TFF1014HN
TFF1015HN
TFF1017HN
TFF1018HN
Package
SOT763-1
SOT763-1
SOT763-1
SOT763-1
Input freq
range
Gconv
NF
OIP3
LO Freq
Integrated Phase noise

density (degrees RMS)
(V)
(mA)
(dB)
(dB)
(dB)
(GHz)
10.7 - 12.75
52
36
13
9.75 / 10.6
1.5
10.7 - 12.75
52
39
13
9.75 / 10.6
1.5
10.7 - 12.75
52
42
13
9.75 / 10.6
1.5
10.7 - 12.75
52
45
13
9.75 / 10.6
1.5

82
Vcc
3.4.4 Low noise LO generators for VSAT and general microwave applications
Why choose NXPs low noise LO generators
`` Lowest total cost of ownership
`` Alignment-free concept
`` Easy circuit design-in
`` Improved LO stability
Low noise LO generators for VSAT applications
VCC
fIN(REF)
Type
ICC
PLL phase noise @ N=64,

@100 kHz
Package
SOT616
SOT616
SOT616
TFF1003HN
TFF1007HN
TFF1008HN
PLL
Output buffer
fo(RF)
Po
RLout(RF)
Input
Si
Typ
Typ
Max
Typ
Max
Min
(MHz)
(V)
(mA)
(dBc/Hz)
(GHz)
(dBm)
(dB)
(dBm)
50 - 815
3.3
100
-92
12.8 - 13.05
-5
-10
-10
230.46 - 234.38
3.3
100
-104
14.62 - 15
-3
-10
-10
220.91 - 225.2
3.3
130
-104
14.1 - 14.4
-3
-10
-10
Low noise LO generators for general microwave applications

Package
fIN(REF)
VCC
ICC
Typ
(V)
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
Typ
(mA)
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
PLL phase noise @

N=64
@ 100 kHz @ 10 MHz
(dBc/Hz) (dBc/Hz)
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
Min
(GHz)
6.84
7.16
7.49
7.84
8.21
8.59
8.99
9.00
9.41
9.85
10.31
10.79
11.29
11.81
12.36
12.9
13.54
14.17
14.83
PLL
fo(RF)
Typ
(GHz)
7
7.33
7.67
8.02
8.4
8.79
9.2
9.4
9.63
10.07
10.54
11.03
11.55
12.09
12.65
13.2
13.85
14.5
15.18
(MHz)
TFF11070HN* SOT616
27 - 448
TFF11073HN* SOT616
28 - 468
TFF11077HN* SOT616
29 - 490
TFF11080HN* SOT616
31 - 513
TFF11084HN SOT616
32 - 537
TFF11088HN
SOT616
34 - 562
TFF11092HN SOT616
35 - 588
TFF11094HN
SOT616
36-600
TFF11096HN
SOT616
37 - 616
TFF11101HN*
SOT616 38 - 644
TFF11105HN
SOT616
40 - 674
TFF11110HN*
SOT616
42 - 706
TFF11115HN
SOT616
44 - 738
TFF11121HN*
SOT616
46 - 773
TFF11126HN*
SOT616 48 - 809
TFF11132HN*
SOT616
51 - 846
TFF11139HN*
SOT616
53 - 886
TFF11145HN
SOT616
55 - 927
TFF11152HN
SOT616
58 - 970
* = to be released on request, please consult your local NXP representative or authorized distributor
3.5
Max
(GHz)
7.16
7.49
7.84
8.21
8.59
8.99
9.41
9.6
9.85
10.31
10.79
11.29
11.81
12.36
12.94
13.5
14.17
14.83
15.52
Output buffer
Po
RLout(RF)
Typ
Max
(dBm)
(dB)
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
Input
Si
Min
(dBm)
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
Frequency
band
Type
C
C
C
C. X
X
X
X
X
X
X
Ku
Ku
Ku
Ku
Ku
Ku
Ka
Ka
Ka
RF MOS transistors
3.5.1 JFETs
JFET selection guide on www.nxp.com/rffets

Easy-to-use parametric filters help you to choose the right junction
field effect transistor for your design.
Why choose NXPs JFETs

`` Reliable volume supplier
`` Short lead time
`` Broad portfolio
83
N-channel junction field-effect transistors for switching

Type
BSR56
BSR57
BSR58
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
J108
J109
J110
J111
J112
J113
PMBF4391
PMBF4392
PMBF4393
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT54
SOT54
SOT54
SOT54
SOT54
SOT54
SOT23
SOT23
SOT23
VDS
IG
(V)
max
40
40
40
25
25
25
40
40
40
25
25
25
40
40
40
40
40
40
(mA)
max
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
I DSS
(mA)
min
max
50
20
100
8
80
80
40
10
20
5
2
80
40
10
20
5
2
50
150
25
75
5
30
CHARACTERISTICS
RDSON
C rs
()
(pF)
max
min
max
25
5
40
5
60
5
8
15
12
15
18
15
30
typ.3
50
typ.3
100
typ.3
8
15
12
15
18
15
30
typ.3
50
typ.3
100
typ.3
30
3.5
60
3.5
100
3.5
-Vgsoff
(V)
min
max
4
10
2
6
0.8
4
3
10
2
6
0.5
4
3
10
1
5
0.5
3
3
10
2
6
0.5
4
3
10
1
5
0.5
3
4
10
2
5
0.5
3
t on
(ns)
typ
4
4
4
13
13
13
4
4
4
13
13
13
-
t off
(ns)
max
15
15
15
typ
6
6
6
35
35
35
6
6
6
35
35
35
-
max
25
50
100
20
35
50
P-channel junction field-effect transistors for switching

Type
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
J174
J175
J176
J177
Package
SOT23
SOT23
SOT23
SOT23
SOT54
SOT54
SOT54
SOT54
VDS
IG
(V)
max
30
30
30
30
30
30
30
30
(mA)
max
50
50
50
50
50
50
50
50
I DSS
(mA)
min
max
20
135
7
70
2
35
1.5
20
20
135
7
70
2
35
1.5
20
CHARACTERISTICS
RDSON
C rs
()
(pF)
max
min
max
85
typ.4
125
typ.4
250
typ.4
300
typ.4
85
typ.4
125
typ.4
250
typ.4
300
typ.4
-Vgsoff
(V)
min
max
5
10
3
6
1
4
0.8
2.25
5
10
3
6
1
4
0.8
2.25
t on
(ns)
typ
7
15
35
45
7
15
35
45
N-channel junction field-effect transistors for general RF applications

Type
Package
VDS
IG
(V)
max
(mA)
max
I DSS
(mA)
min
max
CHARACTERISTICS
Vgsoff
|Yfs|
(V)
(mS)
min
max
min
max
DC, LF and HF amplifiers

BF245A
SOT54
30
10
2
6.5
<8
BF245B
SOT54
30
10
6
15
<8
BF245C
SOT54
30
10
12
25
<8
BF545A
SOT23
30
10
2
6.5
0.4
7.5
BF545B
SOT23
30
10
6
15
0.4
7.5
BF545C
SOT23
30
10
12
25
0.4
7.5
BF556A
SOT23
30
10
3
7
0.5
7.5
BF556B
SOT23
30
10
6
13
0.5
7.5
BF556C
SOT23
30
10
11
18
0.5
7.5
Pre-amplifiers for AM tuners in car radios
BF861A
SOT23
25
10
2
6.5
0.2
1.0
BF861B
SOT23
25
10
6
15
0.5
1.5
BF861C
SOT23
25
10
12
25
0.8
2
BF862
SOT23
20
10
10
25
0.3
2
RF stages FM portables, car radios, main radios & mixer stages
SOT23
20
10
0.7
3
typ. 0.8
BF510 (1)
SOT23
20
10
2.5
7
typ. 1.5
BF511(1)
(1)
SOT23
20
10
6
12
typ. 2.2
BF512
SOT23
20
10
10
18
typ. 3
BF513 (1)
Low-level general purpose amplifiers
BFR30
SOT23
25
5
4
10
<5
BFR31
SOT23
25
5
1
5
< 2.5
General purpose amplifiers
BFT46
SOT23
25
5
0.2
1.5
< 1.2
AM input stages UHF/VHF amplifiers
PMBFJ308
SOT23
25
50
12
60
1
6.5
PMBFJ309
SOT23
25
50
12
30
1
4
PMBFJ310
SOT23
25
50
24
60
2
6.5
PMBFJ620
SOT363
25
50
24
60
2
6.5
Asymmetrical
(1)
84
C rs
(pF)
min
max
3
3
3
3
3
3
4.5
4.5
4.5
6.5
6.5
6.5
6.5
6.5
6.5
-
Typ.=1.1
Typ.=1.1
Typ.=1.1
0.8
0.8
0.8
0.8
0.8
0.8
12
16
20
35
20
25
30
-
2.1
2.1
2.1
typ=1.9
2.7
2.7
2.7
-
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
1.5
1.5
>1
1.5
> 10
> 10
> 10
10
1.3
1.3
1.3
1.3
2.5
2.5
2.5
2.5
2.5
4
6
7
1
1.5
4
4.5
t off
(ns)
max
-
typ
15
30
35
45
15
30
35
45
max
-
3.5.2 MOSFETs
RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric

filters help you to choose the right RF MOSFET for your design.
Why choose NXP Semiconductors MOSFETs

`` Reference designs for TV tuning
`` Short lead time
`` Broad portfolio
`` Smallest packages
`` 2-in-1 FETs for tuner applications
`` Reliable volume supply
`` Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
Type
Package
BSS83
SOT143
Silicon RF Switches
BF1107
SOT23
SOT143B
BF11085)
SOT143R
BF1108R5)
BF1108W
SOT343
BF1108WR
SOT343R
BF1118
SOT143B
BF1118R
SOT143R
BF1118W
SOT343
BF1118WR
SOT343R
(V)
max
10
ID
(mA)
max
50
3
3
3
3
3
3
3
3
3
10
10
10
10
10
10
10
10
10
I DSS
(mA)
min
max
-
V(p)GS
(V)
min
max
2(1)
0.1(2)
-
100 (3)
100 (3)
100 (3)
100
100
100
100
100
100
CHARACTERISTICS
C rs
t on
(pF)
(ns)
min
max
typ
max
typ.0.6
1
RDSON
()
max
45
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
20
20
20
20
20
22
22
22
22
t off
(ns)
typ
-
max
5
|S21(on)|2
(dB)
max
-
2.5
3
3
3
3
3
3
3
3
|S21(off)|2
(dB)
min
-
MODE
30
30
30
30
30
30
30
30
30
depl.
depl.
depl.
depl
depl
depl
depl
depl
depl
VDS
enh.
N-channel, dual-gate MOSFETs

Type
Package
With external bias

BF908
SOT143
BF908R
SOT143R
BF908WR
SOT343R
BF991
SOT143
BF992
SOT143
BF994S
SOT143
BF996S
SOT143
BF998
SOT143
BF998R
SOT143R
BF998WR
SOT343R
Fully internal bias
BF1105
SOT143
BF1105R
SOT143R
BF1105WR
SOT343R
BF1109
SOT143
BF1109R
SOT143R
BF1109WR
SOT343R
Partly internal bias
BF904A
SOT143
BF904AR
SOT143R
BF904AWR
SOT343R
BF909A
SOT143
BF909AR
SOT143R
BF909AWR
SOT343R
CHARACTERISTICS
|Yfs|
C is
C os
(mS)
(pF)
(pF)
min
max
typ
typ
VDS
ID
(V)
max
(mA)
max
12
12
12
20
20
20
20
12
12
12
40
40
40
20
40
30
30
30
30
30
3
3
3
4
4
4
2
2
2
27
27
27
25
20
20
18
18
18
-2
-2
-2
-2.5
-1.3
-2.5
-2.5
-2.0
-2.0
-2.5
36
36
36
10
20
15
15
21
21
22
50
50
50
-
3.1
3.1
3.1
2.1
4
2.5
2.3
2.1
2.1
2.1
7
7
7
11
11
11
30
30
30
30
30
30
8
8
8
8
8
8
16
16
16
16
16
16
0.3
0.3
0.3
0.3
0.3
0.3
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
25
25
25
24
24
24
7
7
7
7
7
7
30
30
30
40
40
40
8
8
8
12
12
12
13
13
13
20
20
20
0.3
0.3
0.3
0.3
0.3
0.3
1(6)
1(6)
1(6)
1(6)
1(6)
1(6)
22
22
22
36
36
36
30
30
30
50
50
50
I DSX
(mA)
min max
V(th)gs
(V)
min
max
F @ 800 MHz
(dB)
typ
VHF
UHF
1.7
1.7
1.7
1.1
2
1
0.8
1.05
1.05
1.05
1.5
1.5
1.5
1
1.2(7)
1(7)
1.8
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
2.2(9)
2.2(9)
2.2(9)
2.2(9)
2.2(9)
2.2(9)
1.2(8)
1.2(8)
1.2(8)
1.3 (8)
1.3 (8)
1.3 (8)
1.7
1.7
1.7
1.5
1.5
1.5
X
X
X
X
X
X
X
X
X
X
X
X
2.2
2.2
2.2
3.6
3.6
3.6
1.3
1.3
1.3
2.3
2.3
2.3
2
2
2
2
2
2
X
X
X
X
X
X
X
X
X
X
X
X

(2)

(7)

(3)

(8)

(4)

(9)

(5)

(1)
(6)
Asymmetrical
VGS (th)
VGS(th)
@ 200 MHz
ID
C OSS
VSG
C ig
Depletion FET
plus diode in one
package
85
N-channel, dual-gate MOSFETs

Type
Package
Partly internal bias

BF1100
SOT143
BF1100R
SOT143R
BF1100WR
SOT343R
BF1101
SOT143
BF1101R
SOT143R
BF1101WR
SOT343R
SOT363
BF1102(R)(10)
BF1201
SOT143
BF1201R
SOT143R
BF1201WR
SOT343R
BF1202
SOT143
BF1202R
SOT143R
BF1202WR
SOT343R
SOT363
BF1203 (11)
SOT363
BF1204(10)
BF1205C (11)(12)(13) SOT363
BF1205(11)(12)(13)
SOT363
BF1206(11)
SOT363
BF1206F(11)
SOT666
BF1207(11)(13)(14)
SOT363
BF1208 (11)(12)(13)
SOT666
BF1208D(11)(12)(13) SOT666
BF1210 (11)(12)
SOT363
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF1214(10)
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
SOT363
BF1218 (11/12/13)
SOT363
VDS
ID
(V)
max
(mA)
max
min
max
V(th)gs
(V)
min
max
14
14
14
7
7
7
7
10
10
10
10
10
10
10
10
10
6
6
10
7
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
30
30
30
30
30
30
40
301)
301)
301)
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
8
8
8
8
8
8
12
11
11
11
8
8
8
11
8
8
14
9
8
8
14
9
3
3
13
9
14
9
14
10
14
9
11
11
11
8
8
8
13
14
10
13
13
13
16
16
16
20
19
19
19
16
16
16
19
16
16
24
17
16
16
23
17
6.5
6.5
23
19
24
17
24
20
24
17
19
19
19
16
16
16
23
24
20
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
I DSX
(mA)
1.2(6)
1.2(6)
1.2(6)
1(6)
1(6)
1(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2
1.2(6)
1
1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
1
1
1
1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
CHARACTERISTICS
|Yfs|
C is
(mS)
(pF)
min
max
typ
24
24
24
25
25
25
36
23
23
23
25
25
25
23
25
25
26
28
26
26
33
29
17
17
25
26
26
28
26
25
26
28
25
25
25
28
28
28
25
26
25
33
33
33
35
35
35
40
40
40
35
40
40
41
43
40
40
48
44
32
32
40
41
41
43
41
40
41
43
40
40
40
43
43
43
35
41
40
2.2
2.2
2.2
2.2
2.2
2.2
2.8 (9)
2.6
2.6
2.6
1.7
1.7
1.7
2.6
1.7
1.7
2.2
2
1.8
2.0
2.4
1.7
2.4
1.7
2.2
1.8
2.2
2
2.1
2.1
2.2
2
2.1
2.1
2.1
1.7
1.7
1.7
2.2
2.1
2.1
C os
(pF)
typ
F @ 800 MHz
(dB)
typ
VHF
UHF
1.4
1.4
1.4
1.2(8)
1.2(8)
1.2(8)
1.6(8)
0.9
0.9
0.9
0.85
0.85
0.85
0.9
0.85
0.85
0.9
0.85
0.75
0.85
1.1
0.85
1.1
0.85
0.9
0.8
0.9
0.85
0.8
0.85
0.9
0.85
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.8
0.85
2
2
2
1.7
1.7
1.7
2
1.9
1.9
1.9
1.1
1.1
1.1
1.9
1.1
1.1
1.4
1.4
1.2
1.4
1.6
1.4
1.1
1.0
1.4
1.4
1.4
1.4
1.1
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
1.4
1.1
1.4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X

(1)

(3)

(4)

(5)

(7)

(8)

(2)
Asymmetrical
VGS(th)
I D
VSG
Depletion FET plus diode in one package
@200 MHz
C OSS
C ig
Two equal dual gate MOSFETs in one package
(11)
Two low noise gain amplifiers in one package
(12)
Transistor A: fully internal bias, transistor B: partly internal bias
(13)
Internal switching function
(14)
Transistor A: partly internal bias, transistor B: fully internal bias
(9)
(10)
N-channel, dual gate MOSFETs for set-top-boxes

CHARACTERISTICS
Package
Type
BF1215 (1)(2)(3)
SOT363
BF1216(1)
SOT363
BF1217
SOT343
VDS
ID
(V)
max
6
6
6
6
6
(mA)
max
30
30
30
30
30
V(th)gs
IDSX
(mA)
max
19.5
23
19.5
23
23
(V)
min
0.3
0.3
0.3
0.3
0.3
max
1
1
1
1
1
|Yfs|
Cis
COS
(mS)
typ
27
27
27
27
27
(pF)
typ
2.5
2.5
2.5
2.5
2.5
(pF)
typ
0.8
0.8
0.8
0.8
0.8
Two low noise gain amplifiers in one package

(2)
Transistor A: fully internal bias, transistor B: partly internal bias
(3)
Internal switching function

(1)
86
F @ 800
MHz
(dB)
typ
1.9
1.9
1.9
1.9
1.9
X-Mod @ 40 dB
gain reduction
(dB)
typ
107
107
107
107
107
3.6
RF modules
CATV module selection guide on www.nxp.com/catv

Easy-to-use parametric filters help you to choose the right
CATV module for your design.
Why choose NXPs RF Modules

`` Excellent linearity, stability, and reliability
`` High power gain
`` Low total cost of ownership
Both families will be extended in the following months to cover

all of the two specific market segments.
C-types (China)
`` CATV push-pulls, chapter 3.6.2: BGY588C, BGE788C,
CGY888C
`` CATV power doublers, chapter 3.6.3: BGD712C, CGD982HCi,
CGD985HCi, CGD987HCi
`` CATV optical receivers, chapter 3.6.4: BGO807C, BGO807CE
CATV types for Chinese (C-types) and 1 GHz GaAs HFET

line-ups
New in our CATV hybrid portfolio are two families of products.
The C-types are specially designed for the Chinese market,
customized for two major governmental projects. The GaAs
HFET family includes a complete 1 GHz line-up for high-end
applications around the world.
1 GHz GaAs HFET high-end hybrids

`` CATV push-pulls, chapter 3.6.2 : CGY1032, CGY1041,
CGY1043, CGY1047, CGY1049
`` CATV power doublers, chapter 3.6.3: CGD1040Hi,
CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H,
CGD1044H
3.6.1 CATV push-pulls

Type
BGY588C
BGY585A
BGY587
BGY587B
BGY588N
BGY685A
BGY687
BGY785A
BGE788C
BGY787
BGE787B
BGY883
BGE885
BGX885N
BGY885A
BGY887
CGY888C
BGY835C
BGY887B
BGY888
Frequency
range (MHz)
40 - 550
40 - 600
40-750
40 - 870
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
33.5 - 35.5
17.7 - 18.7
21.5 - 22.5
26.2 - 27.8
34 - 35
17.7 - 18.7
21 - 22
18 - 19
33.2 - 35.2
21 - 22
28.5 - 29.5
14.5 - 15.5
16.5 - 17.5
16.5 - 17.5
18 - 19
21 - 22
34.5 - 36.5
33.5 - 34.5
28.5 - 29.5
33.5 - 34.5
0.2 - 1.7
0.5 - 2
0.2 - 1.5
0.5 - 2.5
0.5 - 1.5
0.5 - 2.2
0.8 - 2.2
0-2
0.3 - 2.3
0 - 1.5
0.2 - 2.2
0-2
0.2 - 1.2
0.2 - 1.4
0-2
0.2 - 2
1.5
0.5 - 2.5
0.5 - 2.5
0.5 - 2.5
0.5
0.2
0.2
0.4
0.3
0.2
0.2
0.1
0.6
0.2
0.45
0.3
0.5
0.3
0.2
0.2
0.25
0.5
0.5
0.2
16 / 16
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
16 / 16
20 / 20
20 / 20
20 / 20
14 / 14
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
-57
-59
-57
-57
-57
-55
-54
-54.5
-49
-54.5
-48
-61
X mod
(dB)
-62
-58
-60
-59
-60
-54
-57.5
-54
-52
-61
-65
-64.5
-65
-60
-60
-63.5
-65
-64.5
-72
-60
-63
CSO
(dB)
@ Ch
@ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
-62
-59
-54
-57
-62
-56
-52
-62
-52
-57.5
-56
-61
77
77
77
77
77
85
85
110
110
110
110
49
44
44
44
44
44
44
44
44
44
44
44
44
-67
-67.5
-63
-55
-60
-64
49
49
112
49
49
49
44
44
44
44
44
44
8
8
7
6.5
6
8.5
6.5
6
8
5
6.5
8.5
8
8
6
5
4
7
6.5
5.5
345
220
220
340
325
240
240
225
325
220
340
235
240
240
225
220
280
340
340
325
3.6.2 CATV push-pulls 1 GHz

Gain
Slope
(dB)
(dB)
CGY1041
21 - 22.5
1.2 - 2.7
CGY1043
23 - 24.5
1.2 - 2.7
CGY1047
27 - 28.5
1.5 - 2.5
40 - 1003
CGY1049
29 - 31
0.85 - 2.35
CGY1032
32 - 34
1.05 - 2.55
BGY1085A
18 - 19
0-2
Bold
= Highly recommended product
Type
Frequency
range
FL
0.9
0.9
0.8
0.85
0.85
0.3
RL IN /RL OUT CTB XMOD CSO

20 / 18
20 / 18
20 / 18
20 / 18
20 / 18
20 / 20
-62
-62
-64
-62
-62
-53
-58
-58
-60
-58
-58
-54
-64
-64
-66
-64
-64
-56
@ Ch
79 NTSC channels + 75 digital channels
150
@ Vo NF @ fmax I tot
(dBmV)
(mA)
44
4.3
265
44
4.2
265
44
4.5
250
44
4.5
265
44
4.4
265
40
7.5
240
87
3.6.3 CATV power doublers

Frequency
range (MHz)
Type
BGD502
BGD702
BGD702N
BGD712
BGD712C
BGD704
BGD714
BGD885
BGD802
BGD812
BGD804
BGD814
BGD816L
CGD942C
CGD944C
CGD1040HI
CGD1042HI
CGD1044HI
CGD1046HI
CGD1042H
CGD1044H
CGD982HCI
CGD985HCI
CGD987HCI
40 - 550
40 - 750
40 - 870
40 - 1003
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
X mod
(dB)
CSO
(dB)
@ Ch
@ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
18 - 19
18 - 19
18 - 19
18.2 - 18.8
18.2 - 18.8
19.5 - 20.5
20 - 20.6
16.5 - 17.5
18 - 19
18.2 - 18.8
19.5 - 20.5
19.7 - 20.3
21.2 - 21.8
22 - 24
24 - 26
19.5 - 22
22 - 23.5
23.5 - 25.5
26.5 - 28
22 - 24
24 - 26
22 - 24
23.5 - 25.5
26 - 28
0.2 - 2.2
0.2 - 2
0.2 - 2
0.5 - 1.5
0.5 - 1.5
0-2
0.5 - 1.5
0.2 - 1.6
0.2 - 2
0.4 - 1.4
0.2 - 2
0.5 - 1.5
0.5 - 1.5
1-2
1-2
0.5 - 2
0.5 - 2
0.5 - 2
0.7 - 2.2
1.5
1
0.5 - 2
0.5 - 2
0.7 - 2
0.3
0.2
0.25
0.35
0.35
0.2
0.35
0.5
0.2
0.5
0.2
0.5
0.5
0.5
0.5
1
1
1
1
0.5
0.5
1
1
1
20 / 20
20 / 20
20 / 20
23 / 23
17 / 17
20 / 20
23 / 23
20 / 20
20 / 20
25 / 23
20 / 20
25 / 24
22 / 25
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 21
20 / 21
20 / 20
20 / 20
20 / 20
-65
-59
-58
-62
-62
-58
-61
-68
-64
-62
-63
-63
-62
-62
-63
-58
-63
-63
-61
-62
77
110
110
112
112
110
112
44
44
44
44
44
44
44
-56.5
-57
-54
-56
-55
-66
-66
-70
-70
-70
-75
-75
-75
-66
-66
-66
-61
-62
-62
-61
-58
-66
-66
-66
-65
-64
-68
-67
-67
-68
-68
-68
-64.5
-58
-60.5
-57
-56
-66
-66
-76
-75
-75
-70
-76
-76
-69
-69
-66
129
132
129
132
132
98
98
79
79
79
79
79
79
98
98
98
44
44
44
44
44
48
48
58.4
58.4
58.4
56.4
59
59
48
48
48
8
6.5
8.5
7
7
6.5
7
8
6.5
7.5
6.5
7.5
7.5
3.5
3.5
5.5
5.5
5
5
5
5
5.5
5
5
415
425
435
395
410
425
395
450
395
395
395
395
360
450
450
440
440
440
450
450
450
440
440
440
3.6.4 CATV optical receivers

Frequency
range (MHz)
Type
BGO807
BGO807C
BGO807CE
BGO827
40 - 870
S
(V/W)
Slope
(dB)
FL
(dB)
RLOUT
(dB)
IMD3
(dB)
IMD2
(dB)
@ fmeasured
(MHz)
@ Pi(opt)
(mW)
NF @ fmax
(dB)
Itot
(mA)
Remark
800
800
800
800
0-2
0-2
0-2
0-2
1
1
1
1
11
11
11
11
-71
-71
-69
-73
-55
-54
-53
-57
854.5
854.5
854.5
854.5
1
1
1
1
8.5
8.5
8.5
8.5
205
205
205
205
FC and SC available
FC and SC available
FC and SC available
FC and SC available
3.6.5 CATV reverse hybrids

Type
BGY68
BGY66B
BGY67
BGY67A
BGR269
Frequency
range (MHz)
5 - 75
5 - 120
5 - 200
Gain
(dB)
Slope
(dB)
FL
(dB)
RLIN/RLOUT
(dB)
CTB
(dB)
X mod
(dB)
29.2 - 30.8
24.5 - 25.5
21.5 - 22.5
23.5 - 24.5
34.5 - 35.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.6
0.2
0.2
0.2
0.2
0.5
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
-68
-66
-67
-67
-57
-60
-54
-60
-59
-50
CSO
(dB)
-66
@ Ch
@ Vo
(dBmV)
NF @ fmax
(dB)
Itot
(mA)
4
14
22
22
28
50
48
50
50
50
3.5
5
5.5
5.5
5.5
135
135
215
215
160

Bold
= Highly recommended product
NOTES: This table is for reference only.
For full data please refer to the latest datasheet.
For availability please check the NXP Sales office.
Description
`` Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo)
`` FL is flatness of frequency response
`` The number of channels and the output voltage at which CTB, Xmod, CSO, IMD2 and IMD3 are characterized, are @ fmax
`` S is minimum responsivity of optical receivers
88
3.7
RF power transistors
NEW: RF power transistor selection guide on www.nxp.com/rfpower

Easy-to-use parametric filters help you to choose the right RF
power transistor for your design.
3.7.1 Base station transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview
Device naming conventions RF power base stations transistors
22 L S
-45 P R B N G
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC
P: Plastic
L: high frequency power transistor
B: semiconductor die made of Si
B L F 6 G
Why choose NXPs RF power transistors for base stations:

L F 6 G technology
22 L S -45 P (generation
R B N G
`B` Leading
6, 7 and 8 of LDMOS)
gullwing-shaped leads
`` Highest efficiency
specialty
option: current sense lead
`` Best ruggedness
enhanced ruggedness
push-pull device
`` Advanced Doherty
amplifier designs
P1dB power
option: earless package
`` Industrys first
3.8
GHz resistivity
Doherty
option:
low thermal
operating frequency (in 100MHz; maximum)
`` Industry's
firstLDMOS
3 way, 900 MHz Doherty
G: standard
`` Inudstry's
first 50V,
600W,
F: LDMOS transistor
in ceramic
package single package Doherty
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
3.7.1.1
Function
0.7 - 1.0 GHz line-up

Type
Driver
BLF6G21-10G
MMIC driver BLM6G10-30(G)
BLF6G10L-40BRN
Driver/final
BLF6G10(S)-45
BLP7G10S-140P(G)
BLF6G10(LS)-160RN
BLF8G10LS-160
BLF6G10-200RN
Final
BLF6G10LS-200RN
BLF7G10LS-250
BLF6G10L(S)-260PRN
BLF8G10LS-300P
3.7.1.2
Function
Driver
Final
WCDMA performance
fmin
(MHz)
fmax
(MHz)
CW
P1dB (W)
VDS (V)
PL (W)
BO (dB)
D (%)
Gp (dB)
1
920
700
700
700
700
700
700
688
920
700
700
2200
960
1000
1000
1000
1000
1000
1000
1000
960
1000
1000
10
30
40
45
140
160
160
200
200
250
260
300
28
28
28
28
28
32
28
28
28
28
28
28
2
2
2.5
1
32
32
40
40
40
60
40
110
11.5
11.8
12
16.5
8
7
7
7
7
7
8.1
7
31
11.5
15
8
32
27
29
28.5
28.5
30
26.5
47
19.3
29
23
23
19
22.5
22
20
20
19
22
16
fmin
(MHz)
fmax
(MHz)
CW
P1dB (W)
VDS (V)
PL (W)
BO (dB)
D (%)
1
1450
1450
1450
1450
2200
1550
1550
1550
1550
10
40
200
250
300
28
28
28
28
28
0.7
2.5
50
60
85
11.5
12.0
6.0
6.2
5.5
15
13
29
33
31

Type
BLF6G21-10G
BLF6G15L-40BRN
BLF7G15LS-200
BLF6G15L-250PBRN
BLF7G15LS-300P
Test signal
Package
1-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
2-C WCDMA
IS95
SOT538A
SOT822-1
SOT1112A
SOT608B
SOT1204
SOT502
SOT502B
SOT502A
SOT502B
SOT502B
SOT539B
SOT539B
Gp (dB)
Test signal
Package
18.5
22
19.5
18.5
18
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT1112A
SOT502B
SOT1110A
SOT539B
WCDMA performance
89
3.7.1.3
Function
Driver
Final
3.7.1.4
Function
Driver
Final
3.7.1.5
Function
Driver
Final
3.7.1.6
Function
Driver
Final
90
Test signal performance
fmin
(MHz)
fmax
(MHz)
CW
P1dB (W)
VDS (V)
PL (W)
BO (dB)
D (%)
Gp (dB)
Test signal
Package
1
1800
1800
1800
2010
2010
1800
1800
1800
1800
1800
1800
1800
1800
1800
1800
1800
1800
1805
1805
1805
1805
1805
1805
2200
2000
2000
2000
2025
2025
2000
2000
2000
2000
2000
2000
2000
2000
2050
2000
2000
2000
1990
1990
1880
1880
1880
1880
10
40
45
45
50
50
75
75
90
90
110
110
140
140
160
180
180
180
200
200
230
230
250
250
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
32
30
30
28
28
30
30
28
28
0.7
2.5
2.5
2.5
8
8
29.5
29.5
84
84
25
25
35.5
60
45
50
40
40
55
55
50
50
70
70
11.5
12.0
12.6
12.6
8.0
8.0
4.1
4.1
0.3
0.3
6.4
6.4
6.0
3.7
5.5
5.6
6.5
6.5
5.6
5.6
6.6
6.6
5.5
5.5
15
15
14
14
43
43
37.5
37.5
54
54
32
32
30
41
34
29.5
27
27
33
33
29.5
29.5
35
35
18.5
18.8
19.2
19.2
14.5
14.5
19
19
19
19
19
19
16.5
17.5
18
18
17.2
17.2
18
18
16.5
16.5
18
18
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
TD-SCDMA
TD-SCDMA
GSM EDGE
GSM EDGE
GSM EDGE
GSM EDGE
2-c WCDMA
2-c WCDMA
2-c WCDMA
GSM EDGE
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT608A
SOT608A
SOT608B
SOT1130A
SOT1130B
SOT502A
SOT502B
SOT1121A
SOT1121B
SOT502A
SOT502B
SOT502B
SOT1121B
SOT1121
SOT539A
SOT502A
SOT502B
SOT502A
SOT502B
SOT539A
SOT539B
SOT539A
SOT539B
Type
fmin
(MHz)
fmax
(MHz)
CW
P1dB (W)
VDS (V)
PL (W)
BO (dB)
D (%)
Gp (dB)
Test signal
Package
BLF6G21-10G
BLP7G22-10
BLM6G22-30
BLM7G22S-60PG
BLF6G22L-40BN
BLF6G22L(S)-40P
BLF6G22(S)-45
BLD6G22L(S)-50
BLF6G22LS-75
BLF7G22LS-100P
BLF6G22LS-100
BLF7G22L(S)-130
BLF7G22L(S)-160
BLF6G22(LS)-180PN
BLF6G22(LS)-180RN
BLF7G22L(S)-200
BLF7G22L(S)-250P
10
10
2100
2000
2000
2110
2000
2110
2000
2000
2000
2000
2000
2000
2000
2110
2110
2200
2200
2200
2200
2200
2170
2200
2170
2200
2200
2200
2200
2200
2200
2200
2170
2170
10
10
30
60
40
40
45
50
75
100
100
130
160
180
180
200
250
28
28
28
28
28
28
28
28
28
28
28
28
28
32
30
28
28
0.7
0.7
2
3
2.5
13.5
2.5
8
17
20
25
30
43
50
40
55
70
11.5
11.5
11.8
11.5
12.0
4.7
12.6
8.0
6.4
7.0
6.0
6.4
5.7
5.6
6.5
5.6
5.5
15
15
9
10
16
30
13
40
30.5
28
29
32
30
27.5
25
31
30
18.5
17
29.5
29
19
19
18.5
14
18.7
18
18.5
18.5
18
17.5
16
18.5
17
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
TD-SCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT1179
SOT834-1
tbd
SOT1112A
SOT1121B3
SOT608B
SOT1130B
SOT502B
SOT1121B3
SOT502B
SOT502B
SOT502B3
SOT539B
SOT502B
SOT502B
SOT539B
Test signal
Package
IS-95
1-C WCDMA
IS-95
IS-95
IS-95
IS-95
IS-95
IS-95
IS-95
IS-95
SOT1121
SOT1121
SOT1121
SOT502
SOT502
SOT502
SOT502
SOT539
SOT1246
SOT1246
Test signal
Package
N-CDMA
N-CDMA
N-CDMA
N-CDMA
SOT975
SOT608
SOT502
SOT502
Type
BLF6G21-10G
BLF6G20-40
BLF6G20-45
BLF6G20S-45
BLD6G21L-50
BLD6G21LS-50
BLF6G20-75
BLF6G20LS-75
BLF7G20L-90P
BLF7G20LS-90P
BLF6G20-110
BLF6G20LS-110
BLF6G20LS-140
BLF7G20LS-140P
BLF7G21L(S)-160P
BLF6G20-180PN
BLF6G20-180RN
BLF6G20LS-180RN
BLF7G20L-200
BLF7G20LS-200
BLF6G20-230PRN
BLF6G20S-230PRN
BLF7G20L-250P
BLF7G20LS-250P
2.3- 2.7 GHz line-up
Type
fmin
(MHz)
fmax
(MHz)
CW
P1dB (W)
VDS (V)
PL (W)
BO (dB)
D (%)
Gp (dB)
BLF7G27L(S)-75P
BLF6G27LS-40P
BLF7G27L(S)-90P
BLF7G24L(S)-100
BLF7G27L(S)-100
BLF7G24L(S)-140
BLF7G27L(S)-140
BLF7G27L(S)-150P
BLF7G24LS-160P
BLF7G27LS-200P
2300
2500
2500
2300
2500
2300
2500
2500
2300
2600
2700
2700
2700
2400
2700
2400
2700
2700
2400
2700
75
40
90
100
100
140
140
150
160
200
28
28
28
28
28
28
28
28
28
28
12
20
16
14
25
30
20
30
30
42
8.0
3.0
7.5
8.5
6.0
6.7
8.5
7.0
7.3
7.0
26
37
27.5
24
24
22
22
27
27
25
17
17.5
17.5
18
17.5
17
17
16.5
16.5
16.5
Type
fmin
(MHz)
fmax
(MHz)
CW
P1dB (W)
VDS (V)
PL (W)
BO (dB)
D (%)
Gp (dB)
BLF6G38-10(G)
BLF6G38(LS)-25
BLF6G38(LS)-50
BLF6G38(LS)-100
3400
3400
3400
3400
3600
3800
3800
3600
10
25
50
100
28
28
28
28
2
4.5
9
18.5
7.0
7.4
7.4
7.3
20
24
23
21.5
14
15
14
13
Power LDMOS Doherty designs
Freq band (MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
728-821 MHz
790-821
55.5
790-821
57.2
728-768
58
869-960 MHz
869-894
52
869-894
52.7
920-960
55.1
920-960
56.2
920-960
57.3
925-960
57.7
869-894
58
925-960
58.9
1476-1511 MHz
1526-1555
56.6
1476-1511
58.1
1476-1511
58.6
1805-1880 MHz (DCS)
1805-1880
52.5
1805-1880
55
1805-1880
55.4
1805-1880
55.5
1805-1880
56.1
1805-1880
57.5
1805-1880
57.9
1805-1880
58.2
1805-1880
58.6
1930-1990 MHz (PCS)
1930-1990
53
1930-1990
54.3
1930-1990
55.2
1930-1990
55.5
1930-1990
56
1930-1990
56
1930-1990
57
1930-1990
58
1930-1990
58.2
1930-1990
58.5
1880-2025 MHz (TD-SCDMA)
1805-2050
52
2010-2025
47
1880-2025
50
2010-2025
50
1880-1920
52.5
2110-2170 MHz (UMTS / LTE)
2110-2170
47
2110-2170
48.5
2110-2170
54.7
2110-2170
54.9
2110-2170
55
2110-2170
55
2110-2170
55.5
2110-2170
55.9
2110-2170
56
2110-2170
56.5
2110-2170
57
2110-2170
57.2
2110-2170
58
2110-2170
58
2300-2400 MHz (WiBRO / LTE)
2300-2400
49.5
2300-2400
55
2500-2700 MHz (WiMAX / LTE)
2570-2620
49.5
2500-2700
50
2500-2700
50.3
2500-2600
52
2600-2700
52
2600-2700
52
2500-2700
52.5
2620-2690
55.2
2545-2575
55.3
3300-3800 MHz (WiMAX)
3400-3600
51
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type
Main transistor
Peak transistor
47
49.5
50
28
32
32
19
20
20.5
42
42
47
SYM
SYM
SYM
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-200RN
BLF6G10LS-200RN
BLF6G10LS-200RN
BLF6G10LS-200RN
44
44.5
47.1
48
49.3
49.7
50
50.9
28
28
28
28
30
28
32
32
20
15
20.5
18.5
16
20.5
20.5
22
48
50
44
40
50
40
46
47
SYM
3-WAY
SYM
SYM
ASYM
SYM / MPPM
SYM
SYM / MMPP
BLF6G10S-45
BLF6G10S-45
BLF6G10-135RN
BLF8G10LS-160
BLF6G10L(S)-260PRN
BLF6G10-200RN
BLF6G10L(S)-260PRN
BLF6G10S-45
2x BLF6G10S-45
BLF6G10-135RN
BLF7G10LS-250
BLF6G10L(S)-260PRN
BLF6G10-200RN
BLF6G10L(S)-260PRN
48.6
49.6
50.6
28
28
32
18.4
16
16.5
42
42
42
SYM
ASYM
SYM
BLF7G15LS-200
BLF7G15LS-200
BLF6G15LS-250PBRN
BLF7G15LS-200
BLF7G15LS-300P
BLF6G15LS-250PBRN
44.5
47
47.5
47
48.1
49.5
50
50
51
28
32
31
28
30
30
32
28
28
16
16
16.3
16
15.2
16
15.5
16
16
44
38
49
41
48
42
37
42
47.6
SYM
SYM
ASYM
SYM
ASYM
SYM
SYM / MMPP
SYM
3-WAY
1/2 BLF7G21LS-160P
1/2 BLF6G20-230PRN
BLF7G20LS-90P
1/2 BLF7G20L(S)-250P
BLF7G20LS-90P
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
BLF7G20LS-200
1/2 BLF7G21LS-160P
1/2 BLF6G20-230PRN
BLF7G21LS-160P
1/2 BLF7G20L(S)-250P
BLF7G20LS-200
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
2x BLF7G20LS-200
45
47.4
47.2
47.5
48
48
49
50
50
50.5
28
28
28
28
31
28
30
32
28
30
16.5
16.7
16
14.5
15.3
14.8
17.2
15.5
16
15.7
40
48.2
40
46
38
45
41
37
40
43
SYM
SYM
SYM
ASYM
SYM
ASYM
SYM
SYM
SYM
3-WAY
BLF6G20-75
BLF6G20LS-110
1/2 BLF7G20LS-250P
BLF7G20LS-90P
BLF6G20LS-140
BLF7G20LS-140P
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
BLF7G20LS-200
BLF6G20-75
BLF6G20LS-110
1/2 BLF7G20LS-250P
BLF7G20LS-200
BLF6G20LS-140
BLF7G20LS-200
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
2x BLF7G20LS-200
44.5
39
42
42
44.5
28
28
28
28
28
15.2
14.4
17
17.2
16
41.5
41
46
47.2
44
SYM
SYM
SYM
SYM
SYM
1/2 BLF7G21LS-160P
BLD6G21L(S)-50
1/2 BLF7G20L(S)-90P
1/2 BLF7G20L(S)-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
BLD6G21L(S)-50
1/2 BLF7G20L(S)-90P
1/2 BLF7G20L(S)-90P
1/2 BLF7G21LS-160P
39
40.5
46.5
47
47
47
46.4
47.9
48
48.5
49
49.2
50
50
28
28
28
28
28
28
28
28
28
28
32
28
32
32
13
17.2
16.5
17
17
15.5
15
17.3
15
16.2
14.5
16
15
17.5
38
46
43
43
43
38
43
42
48
41
41
47
40
40
SYM
SYM
SYM
SYM
SYM
SYM
ASYM
SYM
3-WAY
SYM
ASYM
3-WAY
SYM
SYM
BLD6G22L(S)-50
1/2 BLF6G22L-40P
BLF6G22LS-100
BLF7G22L(S)-130
1/2 BLF7G22LS-250P
BLF6G22L(S)-130
BLF7G22L(S)-130
BLF7G22LS-160
BLF7G22L(S)-130
BLF7G22L(S)-200
BLF6G22-100
BLF7G22LS-160
BLF6G22-180PN
BLF7G22LS-250P
BLD6G22L(S)-50
1/2 BLF6G22L-40P
BLF6G22LS-100
BLF7G22L(S)-130
1/2 BLF7G22LS-250P
BLF6G22L(S)-130
BLF7G22L(S)-200
BLF7G22LS-160
2x BLF7G22L(S)-130
BLF7G22L(S)-200
BLF6G22-180PN
2x BLF7G22L(S)-160
BLF6G22-180PN
BLF7G22LS-250P
42
47.5
28
28
14.6
15.2
44
44
SYM
ASYM
1/2 BLF7G27L(S)-75P
BLF7G24LS-100
1/2 BLF7G27L(S)-75P
BLF7G24LS-140
42
42
42.3
44
44
44
44.5
47.2
47.3
28
28
28
28
28
28
28
30
28
15
15
14.5
14
14
14
14
15
15
43
37.5
39
40
40
40
38
41
41
SYM
SYM
SYM
ASYM
ASYM
ASYM
SYM
ASYM
ASYM
1/2 BLF7G27L(S)-75P
BLF6G27-45
1/2 BLF7G27LS-90P
BLF6G27-45
BLF6G27-45
BLF6G27-45
1/2 BLF7G27LS-150P
BLF7G27LS-100
BLF7G27LS-100
1/2 BLF7G27L(S)-75P
BLF6G27-45
1/2 BLF7G27LS-90P
2x BLF6G27-45
2x BLF6G27-45
BLF6G27(LS)-100
1/2 BLF7G27LS-150P
BLF7G27LS-140
BLF7G27LS-140
43
28
11.5
32
SYM
BLF6G38-50
BLF6G38-50
3.7.1.7
91
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview
Why choose NXPs RF power transistors for broadcast / ISM applications:
`` Highest power
`` Best-in-class design support
`` Best ruggedness
`` Very low thermal resistance design for unrivalled reliability
`` Best broadband performance
NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver
best-in-class performance. We offer the industrys highest power and best ruggedness for all broadcast technologies.
Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and
High Frequency (HF) applications and covers ISM frequency bands.
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up

Function
Type
Driver
final
Driver
Driver/final
Driver
Final
BLP10H605
BLP10H610
BLP15M705
BLP15M710
BLF178P
BLF571
BLF642
BLF871(S)
BLF645
BLF881(S)
BLF573(S)
BLF573P
BLF647P
BLF574
BLF278XR
BLF888A(S)
BLF578
BLF578XR
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
D (%)
Gp (dB)
VDS (V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
470
10
10
10
10
1000
1000
1500
1500
110
500
1400
1000
1400
1000
500
500
1500
500
500
860
500
500
500
500
5
10
5
10
1000
20
35
100
100
140
300
500
150
600
500
600
1000
1200
1000
1200
65
65
57
57
75
70
63
60
56
49
70
70
55
73
73
58
75
71
75
71
20
20
18
18
26
27,5
19
21
18
21
27,2
26
18
27
27
20
26
24
26
24
50
50
32
32
50
50
32
40
32
50
50
50
32
50
50
50
50
50
50
50
Test signal
Package
CW
CW
CW
CW
CW
CW
CW
CW
CW
2-tone class AB
CW
CW
CW
CW
CW
pulsed class AB
CW
pulsed class AB
CW
pulsed class AB
SOT1179
SOT1179
SOT1179
SOT1179
SOT539
SOT467C
SOT467C
SOT467
SOT540A
SOT467
SOT502B
SOT1121
SOT1121
SOT539A
SOT1240
SOT539
SOT539A
SOT539A
3.7.2.2 UHF 470-860 MHz LDMOS line-up

Function
Type
BLF642
Driver
BLF871(S)
BLF881(S)
BLF884P
BLF878
BLF879P
Final
BLF888
BLF888A(S)
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
D (%)
Gp (dB)
VDS (V)
470
470
470
470
470
470
470
470
470
470
470
470
470
470
470
860
860
860
860
860
860
860
860
860
860
860
860
860
860
860
17,5
35
100
24
120
30
75
300
75
95
250
110
250
120
600
19
19
47
33
49
31
33
32
32
32
46
31
46
31
58
48
63
21
22
21
21
21
21
21
20
19
19
19
19
20
32
32
42
42
50
50
50
42
42
42
50
50
50
50
50
Test signal
2-tone class AB
CW
2-TONE
DVB-T
2-tone class AB
DVB-T
DVB-T
CW
DVB-T
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
pulsed class AB
3.7.2.3 2.45 GHz ISM LDMOS transistor line-up

Function
Driver
MMIC
Final
92
Type
BLP25M74
BLP25M710
BLM2425M720
BLP2425M8140
BLF2425M7L(S)140
BLF2425M6L(S)180P
BLF2425M7L(S)200
BLF2425M7L(S)250P
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
D (%)
Gp (dB)
10
10
2400
2400
2400
2400
2400
2400
2500
2500
2500
2500
2500
2500
2500
2500
4
10
20
140
140
180
200
250
53
52
40
55
55
55
52
50
19
19
26,5
18
19
19
18,5
18
Test signal
Package
CW
CW
CW
CW
CW
CW
CW
CW
SOT1179
SOT1179
SOT1138
SOT1179
SOT502
SOT539
SOT502
SOT539
Package
SOT467C
SOT467C
SOT467C
SOT539A
SOT979A
SOT1121
SOT979A
SOT539
3.7.3 Microwave LDMOS RF power transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview
Device naming conventions RF power microwave transistors
B L S 6 G 2731 S -120 G
option: gullwing shaped leads
P1dB power
S: earless package
P: pallet
frequency band (in 100MHz; here: 2700-3100)
G: standard LDMOS ( 28V)
H: high voltage LDMOS (50V)
A: avionics frequency band operation
L: L-band frequency operation
S: S-band frequency operation
Why choose NXPs microwave RF power transistors

`` High gain
`` High efficiency
`` Highest reliability
`` Improved pulse droop and insertion phase
`` Improved ruggedness - overdrive without risk to +5 dB
`` Reduces component count and helps simplify L- and S-band radar design
`` Uses non-toxic, RoHS-compliant packages
3.7.3.1 Avionics LDMOS transistors

Function
Type
Driver
BLL6H0514-25
BLA6G1011-200R(G)
BLA6H0912-500
BLA6H1011-600
BLA6H0912-1000
Final
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
D (%)
Gp (dB)
VDS (V)
Test signal
Package
500
1030
960
1030
960
1400
1090
1215
1090
1215
25
200
500
600
1000
50
65
50
52
50
19
20
17
19
17
50
28
50
48
50
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
SOT467C
SOT502A
SOT634A
SOT539A
SOT539A
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
D (%)
Gp (dB)
VDS (V)
Test signal
Package
500
500
1200
1200
960
1400
1400
1400
1400
1215
25
130
250
500
1000
58
50
55
50
50
21
17
17
17
17
50
50
50
50
50
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
SOT467C
SOT1135B
SOT502B
SOT539A
SOT539A
3.7.3.2 L-band LDMOS transistors

Function
Type
Driver
BLL6H0514-25
BLL6H0514L(S)-130
BLL6H1214L(S)-250
BLL6H1214-500
BLA6H0912-1000
Final
3.7.3.3 S-band LDMOS transistors

Function
Driver
Final
Type
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
D (%)
Gp (dB)
VDS (V)
Test signal
Package
BLS6G2731-6G
BLS6G3135(S)-20
BLS6G2735L(S)-30
BLS6G2731(S)-120
BLS6G3135(S)-120
BLS6G2731S-130
BLS6G2933S-130
BLS7G2933S-150
BLS6G2731P-200
BLS6G2933P-200
BLS7G2729L(S)-350P
BLS7G3135L(S)-350P
2700
3100
2700
2700
3100
2700
2900
2900
2700
2900
2700
3100
3100
3500
3500
3100
3500
3100
3300
3300
3100
3300
2900
3500
6
20
30
120
120
130
130
150
200
220
350
350
33
45
50
48
43
47
47
47
45
45
50
45
15
15.5
14
13.5
11
12.5
12.5
13.5
11
11
13.5
12
32
32
32
32
32
32
32
32
32
32
32
32
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
pulsed RF
SOT975C
SOT608
SOT1135
SOT502B
SOT502
SOT922-1
SOT922-1
SOT922-1
pallet
pallet
SOT539
SOT539
93
3.8
High-speed data converters
As a leader in high performance mixed-signal IC products, NXP offers an extensive selection of

high-speed data converters, with digital interfaces including JESD204A (in CGV TM product line), as
well as CMOS LVCMOS and LVDS DDR interfaces. NXP's high-speed DACs and ADCs deliver
best-in-class converter core performance and ultra-stable dynamic performance across a broad
temperature range. NXP is the only semiconductor vendor to offer high-speed data convertors,
small signal RF building blocks, and RF power amplifiers, to enable system-level integration across
the full radio transceiver chain.
ore information on NXPs high-speed converters:
M
`` Fast track your design with NXPs high-speed converters
http://www.nxp.com/campaigns/fasttrackyourdesign/
`` All literature: http://www.nxp.com/dynamic/literature/tid-50935_tree-product/data.html
3.8.1 High-speed ADCs

Family
Description
ADC1613D series
ADC1613S series
ADC1610S series
ADC1415S series
ADC1413D series
ADC1413S series
ADC1412D series
ADC1410S series
ADC1215S series
ADC1213D series
ADC1213S series
ADC1212D series
ADC1210S series
ADC1207S080
ADC1206S series
ADC1115S125
ADC1113D125
ADC1113S125
ADC1112D125
ADC1015S series
ADC1010S series
ADC1006S series
ADC1005S060
ADC1004S series
ADC1003S series
ADC1002S020
ADC0808S series
ADC0804S series
ADC0801S040

3.8.2 High-speed DACs

Family
Description
DAC1408D series
DAC1405D series Dual 14-bit DAC up to 650/750 Msps
DAC1403D160
DAC1401D125
DAC1208D series
DAC1205D series
DAC1203D160
DAC1201D125
DAC1008D series Dual 10-bit DAC up to 650/750 Msps
DAC1005D series
DAC1003D160
DAC1001D125
94
Digital interface
Input TTL/
LVDS/
Supply
Power dissipation SFDR SNR
LVCMOS
CGV
Package
buffer CMOS
DDR
voltage (V) per channel (mW) (dBc) (dBFS)
1.8 / 3.0
1.8 / 3.0
1.8 / 3.0
1.8 /3.0/5.0
1.8 / 3.0
1.8 / 3.0
1.8 / 3.0
1.8 / 3.0
1.8 /3.0/5.0
1.8 / 3.0
1.8 / 3.0
1.8 / 3.0
1.8 / 3.0
5.0
3.3 / 5.0
1.8 / 3.0/5.0
1.8 / 3.0
1.8 / 3.0
1.8 / 3.0
1.8 /3.0/5.0
1.8 / 3.0
3.3 / 5.0
5.0
5.0
5.0
3 to 5.25
1.8 / 3.3
5.0
2.7 to 5.5
635
690
630
840
635
690
610
630
840
635
690
610
630
840
550
840
635
690
610
840
630
550
312
175
235
53
215
175
30
89
87
89
87
87
87
87
87
87
87
87
87
87
90
70
87
87
86
87
87
87
71
72
72
70
72
56
72
59
71.6
71.4
71.6
71.4
71.4
71.4
71.4
71.4
69.6
69.6
71.4
69.6
69.6
71
64
66.2
66.2
71,4
66.2
61.6
61.6
59
58
58
58
60
48
49
47
HVQFN56 8x8
HVQFN32 7x7
HVQFN40 6x6
HVQFN40 6x6
HVQFN56 8x8
HVQFN32 7x7
HVQFN64 9x9
HVQFN40 6x6
HVQFN40 6x6
HVQFN56 8x8
HVQFN32 7x7
HVQFN64 9x9
HVQFN40 6x6
HTQFP48 7x7
QFP44
HVQFN40 6x6
HVQFN56 8x8
HVQFN32 7x7
HVQFN56 8x8
HVQFN40 6x6
HVQFN40 6x6
QFP44
SSOP28
SSOP28
SSOP28
LQFP32
HTQFP48 7x7
SSOP28
SSOP20
Digital interface
LVCMOS
CGV
Supply
Power dissipation SFDR
voltage (V) per channel (mW) (dBc)
1.8 / 3.3
1.8 / 3.3
3.3
3.3
1.8 / 3.3
1.8 / 3.3
3.3
3.3
1.8 / 3.3
1.8 / 3.3
3.3
3.3
700
435
210
95
700
435
210
95
700
435
210
95
76
77
80
88
76
80
77
65
76
77
80
65
Interpolation
2x, 4x, 8x
2x, 4x, 8x
2x
2x, 4x, 8x
2x, 4x, 8x
2x
2x, 4x, 8x
2x, 4x, 8x
2x
-
Package
HVQFN64 9x9
HTQFP100 14x14
HTQFP80 12x12
LQFP48
HVQFN64 9x9
HTQFP100 14x14
HTQFP80 12x12
LQFP48
HVQFN64 9x9
HTQFP100 14x14
HTQFP80 12x12
LQFP48
4. Design support
This chapter will guide you trough the available tools, documents, materials and links to ease
the design-in of our products.
Streamline your RF design with leading RF EDA software
Electronic design automation (EDA) software lets RF engineers predict the behavior of a design by performing simulations.
That helps them reduce the number of design cycles, lower design risk, and make better RF component choices. NXP's RF
small signal portfolio is supported by a number of EDA toolkits, including Ansoft Designer RF, AWR Microwave Office, and
Agilent Advanced Design System (ADS). Installation manual area available on the NXP web site at www.nxp.com/models.
4.1 S-parameters
4.2 Simulation models
S-parameters help you to simulate the behavior of NXP devices

using your own adjustments for voltage, current, and more.
4.2.1 Spice models
BF67
BFG135
BFG198
BFG21W
BFG25A/X
BFG31
BFG35
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
BFG505
BFG520
BFG520W
BFG540
BFG540W
BFG541
BFG590
BFG591
BFG93A
BFG94
BFG97
BFM505
BFM520
BFQ149
BFQ18A
BFQ19
BFQ67
BFQ67W
BFR106
BFR505
BFR520
BFR540
BFR92A
BFR92AW
BFR93A
BFR93AW
BFS17
BFS17A
BFS17W
BFS25A
BFS505
BFS520
BFS540
BFT25
BFT25A
BFT92
BFT92W
BFT93
BFT93W
BFU725F/N1
BRF505T
PBR941
PBR951
PRF947
PRF949
PRF957
BF1211
BF1211R
BF1211WR
FETs
BF1212
BF1212R
BF1212WR
BF511
BF513
BF862
BGA2001
BGA2003
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGU7003
BGA2712
BGM1011
MMICs
BGM1012
BGM1013
BGM1014
BGM2011
BGA2715
BGA2716
BGA2717
BGA2011
BGA2012
BGA6289
BGA6489
BGA6589
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
Wideband transistors, FETs & Varicaps diodes

For all types in the below tables there are Spice models available.
In the interactive PDF of the RF manual all these type numbers
are hyperlinks that take you directly to the corresponding product
information page on the NXP website. Scroll down to find the
Spice models on each product information page.
BFG10
BFG10/X
BFG10W/X
BFG135
BFG198
BFG21W
BFG25A/X
BFG25AW/X
BFG31
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG35
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
BFG505
BFG505/X
BFG505W/X
BFM505
BFG520
BFM520
BFG520/X
BFQ149
BFG520/XR
BFQ18A
BFG520W
BFQ19
BFG520W/X
BFQ540
BFG540
BFQ67
BFG540/X
BFQ67W
BFG540/XR
BFR106
BFG540W
BFR505
BFG540W/X
BFR505T
BFG540W/XR
BFR520
BFG541
BFR540
BFG590
BFR92A
BFG590/X
BFR92AW
BFG591
BFR93A
BFG67
BFR93AW
BFG67/X
BFS17
BFG92A/X
BFS17A
BFG93A
BFS17W
BFG94
BFS25A
BFG97
BFS505
BF862
BF904
BF908
BB145B
BB149
BB149A
BB156
BB179
BB179B
FETs
BF909
Varicap diodes
BB201
BB202
BB207
Design support
Wideband transistors, FETs & MMICs

For all types in the below tables there are S-parameters
available. In the interactive PDF of the RF manual all these
type numbers are hyperlinks that take you directly to the
corresponding product information page on the NXP website.
Scroll down to find the S-parameters on each product
information page.
Spice models help you to optimize performance and

make it easier to know which external components impact
performance.
BFS520
BFS540
BFT25A
BFT92
BFT92W
BFT93
BFT93W
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F
BFU730F
BFU760F
BFU790F
PBR941
PBR951
PRF947
PRF949
PRF957
BF998
BB208-02
4.2.2 Interactive datasheet

Quickly and easily generate custom datasheets for our
wideband RF transistors based on your specific operating
conditions (http://www.nxp.com/models).
95
4.2.3
Simulation models for RF power devices
For easy design-in, NXP provides fully physics-based, electrothermal models for the RF power transistors. These models are
available for Advanced Design System (ADS) from Agilent and for
Microwave Office (MWO) from Applied Wave Research (AWR).
Newly developed models per product are based on the best-inclass RFLDMOS model, developed by NXP Research, a recognized
leader in physics-based models. This concept yields highly reliable
simulation results over a wide range of electrical conditions. The
standard models fully support DC, AC, s-parameter (small signal),
harmonic balance (large signal) and time-domain simulations.
NXP RF power models allow designers to assess the performance
of complex PA systems at an early stage of the development
process. The available models come with all necessary libraries and
documentation, and can be downloaded from NXPs website.
Product type
BLA6G1011-200R
BLA6H0912-500
BLA6H1011-600
BLF369
BLF3G21-6
BLF571
BLF573
BLF573S
BLF574
BLF578
BLF645
BLF6G10-135RN
BLF6G10-200RN
BLF6G10-45
BLF6G10L-260PRN
BLF6G10L-40BRN
BLF6G10LS-135RN
BLF6G10LS-200RN
BLF6G10LS-260PRN
BLF6G10S-45
BLF6G15L-250PBRN
BLF6G15L-40BRN
BLF6G20-180RN
BLF6G20-230PRN
BLF6G20-45
BLF6G20LS-180RN
BLF6G20S-230PRN
BLF6G20S-45
BLF6G21-10G
BLF6G22-180RN
BLF6G22-45
BLF6G22LS-180RN
BLF6G22S-45
BLF6G27-10
BLF6G27-10G
BLF6G27-135
BLF6G27-45
BLF6G27-75
BLF6G27L-40P
BLF6G27LS-135
BLF6G27LS-40P
BLF6G27LS-75
BLF6G27S-45
BLF6G38-10
BLF6G38-100
BLF6G38-10G
BLF6G38-25
BLF6G38-50
BLF6G38LS-100
BLF6G38LS-50
BLF6G38S-25
BLF7G15L-300P
BLF7G15LS-200
BLF7G20L-200
96
ADS MWO
Product type
model model
Y
Y
BLF7G20L-250P
Y
Y
BLF7G20L-90P
Y
Y
BLF7G20LS-140P
Y
N
BLF7G20LS-200
Y
N
BLF7G20LS-250P
Y
Y
BLF7G20LS-90P
Y
Y
BLF7G21L-160P
Y
Y
BLF7G21LS-160P
Y
Y
BLF7G22L-130
Y
Y
BLF7G22L-130N
Y
Y
BLF7G22L-160
Y
Y
BLF7G22L-200
Y
N
BLF7G22L-250P
Y
Y
BLF7G22LS-130
Y
N
BLF7G22LS-160
Y
N
BLF7G22LS-200
Y
Y
BLF7G22LS-250P
Y
N
BLF7G24L-100
Y
N
BLF7G24L-140
Y
Y
BLF7G24LS-100
Y
N
BLF7G24LS-140
Y
N
BLF7G27L-100
Y
N
BLF7G27L-140
Y
N
BLF7G27L-150P
Y
Y
BLF7G27L-200PB
Y
N
BLF7G27L-75P
Y
N
BLF7G27L-90P
Y
Y
BLF7G27LS-100
Y
Y
BLF7G27LS-140
Y
N
BLF7G27LS-150P
Y
Y
BLF7G27LS-200PB
Y
N
BLF7G27LS-75P
Y
Y
BLF7G27LS-90P
Y
N
BLF871
Y
Y
BLF871S
Y
N
BLF878
Y
Y
BLF881
Y
N
BLF881S
Y
N
BLF888
Y
N
BLF888A
Y
N
BLF888AS
Y
N
BLL6H0514-25
Y
Y
BLL6H0514L-130
Y
N
BLL6H0514LS-130
Y
N
BLL6H1214-500
Y
Y
BLL6H1214L-250
Y
Y
BLL6H1214LS-250
Y
Y
BLM6G22-30
Y
N
BLS6G2731-6G
Y
Y
BLS6G2731S-130
Y
Y
BLS6G3135-120
Y
N
BLS6G3135-20
Y
N
BLS6G3135S-120
Y
N
BLS6G3135S-20
ADS MWO
model model
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
Y
Y
Y
Y
N
Y
N
Y
N
Y
Y
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
N
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
N
Y
Y
Y
Y
Y
N
Y
N
Y
Y
Y
Y
Y
N
Y
Y
Y
N
4.3 Application notes

Multiple RF applications are featured in the RF Manuals first
chapter including application diagrams, recommended types
and product highlights. More in-depth application information
is available in the second chapter. And on the NXP website we
have additional application notes available in the RF section
(http://www.nxp.com/products/all_appnotes/).
4.4 Demo boards
BGA2001 demo board
4.4.1 RF transistor, MMIC & IC demo boards

RF transistor, MMIC & IC demo boards are available (although
limited) via your local NXP representative or authorized
distributor (look at the last chapter: Web Links and Contacts).
BFU690F
BFU725F/N1
BGA2001
BGA2003
BGA2011
BGA2012
BGA2031
BGA2709
BGA2711
BGA2712
BGA2714
BGA2715
BGA2716
BGA2748
BGA2771
BGA2776
RF small signal demo boards

BGA2800
BGM1014
BGA2801
BGU7003
BGA2815
BGU7005
BGA2816
BGU7007
BGA2850
BGU7030F
BGA2865
BGU7031
BGA2866
BGU7032
BGA6289
BGU7033
BGA6489
BGU7041
BGA6589
BGU7042
BGA6589
TFF1003HN
BGA7024
TFF11070HN
BGA7124
TFF11073HN
BGM1011
TFF11077HN
BGM1012
TFF11080HN
BGM1013
TFF11084HN
BGU7005 demo board
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
TFF11105HN
TFF11110HN
TFF11115HN
TFF11121HN
TFF11126HN
TFF11132HN
TFF11139HN
TFF11145HN
TFF11152HN
BGA7124 demo board
Demo boards are available (although limited) via your local NXP
representative (see the last chapter: Web Links and Contacts).
Type
ADC1213S series
ADC1215S series
ADC1410S series
ADC1412D series
ADC1413D series
ADC1413S series
ADC1415S series
ADC1610S series
ADC1613D series
ADC1613S series
4.4.3 High-speed converter demo boards

High-speed converter demo boards are available via your local
NXP representative or authorized distributor.
ADC demo boards
Type
ADC0801S040
ADC0804S series
ADC0808S series
ADC1002S020
ADC1003S series
ADC1004S series
ADC1005S060
ADC1006S series
ADC1010S series
ADC1015S series
ADC1112D125
ADC1113D125
ADC1113S125
ADC1115S125
ADC1206S series
ADC1207S080
ADC1210S series
ADC1212D series
ADC1213D series
Description
Demo board; both CMOS and TTL outputs
Demo boards; both CMOS and TTL outputs
Demo boards; CMOS outputs
Demo boards with both CMOS and LVDS outputs
Demo boards CMOS version; SPI, regulators and CMOS buffer on board
Demo boards LVDS output with SAMTEC connector; SPI, regulators
on board
Demo boards with both CMOS and LVDS outputs
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board;
Demo boards; SPI, regulators on board; LVDS output with SAMTEC
connector
Demo board; CMOS version; SPI, regulators and CMOS buffer on board
Demo board; SPI, regulators on board; LVDS output only SAMTEC
connector
Demo board; VIRTEX 5 FPGA on board
Demo board; compliant with Lattice, Altera, Xilinx FPGA boards
through specific connectors
Demo board; VIRTEX 5 FPGA on board
Demo board; both CMOS and LVDS
Demo board; CMOS version; SPI, regulators and CMOS buffer on board
Demo board; SPI, regulators on board; LVDS output only SAMTEC
connector
Demo boards with both CMOS and LVDS
Demo boards; CMOS version; SPI, regulators and CMOS buffer on board
Demo boards; SPI, regulators on board; LVDS output only SAMTEC
connector
connector
Demo boards; VIRTEX 5 FPGA on board
Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards
Demo board; Lattice ECP3 FPGA on board
Description
connector
connector
connector
Demo board; Lattice ECP3 FPGA on board
Demo boards; both CMOS and LVDS outputs
connector
connector
DAC demo boards

Type
DAC1001D125
DAC1003D160
DAC1005D series
DAC1201D125
DAC1203D160
DAC1205D series
DAC1401D125
DAC1403D160
DAC1405D series
DAC1205D series
DAC1408D series
DAC1208D series
DAC1008D series
KIT ECP3
Description
Demo board; LVCMOS inputs
Demo boards; SPI, LVCMOS inputs
Demo boards; compliant with Lattice, Altera, Xilinx FPGA
boards through specific connectors
Demo boards; Virtex 5 FPGA
Demo boards with Lattice ECP3 FPGA
Demo boards with Virtex 5 FPGA
Demo boards with Virtex 5 FPGA
ADC1413D080+DAC1408D650 with Lattice ECP3 FPGA demo kit
4.5 Samples
For samples of released or non-released products, please
contact your local NXP sales representative or authorized
distributor. NXP sales offices and distributors:
http://www.nxp.com/profile/sales.
4.6 Datasheets
Datasheets are available on the NXP website: www.nxp.com.
97
Design support
4.4.2 RF power transistor demo boards
4.7 Design-in support

If you need design-in support, please contact your local NXP
sales representative or authorized distributor.
4.8 Interactive selection guides

On the NXP website you can find parametric filters to help
you choose the right device for your design. Please go to the
product category page of your choice and click on selection
guide.
NEW: i-Phone App RF calculator tool available

Check out the App store. Android app to be released in Q3.
98
5. Cross-references & replacements

NXP cross-references:
http://www.nxp.com/search/
NXP end-of-life:
http://www.nxp.com/products/eol/
5.1 Cross-references: manufacturer types versus NXP types

In alphabetical order of manufacturer type
Abbreviations:
Base station
Broadcasts
BS diode
CATV OR
CATV PD
CATV PPA
CATV PPA/HG
CATV RA
FET
Microwave
MMIC
Varicap
WB trs 1-4
WB trs 5-7
Base station power transistors

Broadcast power transistors
Band switch diode
CATV optical receiver
CATV power doubler
CATV push-pull amplifier
CATV push-pull amplifier high gain
CATV reverse amplifier
Field-effect transistor
Microwave power transistors
Monolithic microwave integrated circuit
Varicap diode
Wideband transistor 1-4 generation
Wideband transistor 5-7 generation
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
10500
10502
PTF 081301F - 130 W
AH125
SXB-4089
0910-150M
0910-300M
0910-60M
0912-45
1011LD200
1011LD300
1015MP
1035MP
1214-30
1214-32L
1SS314
1SS356
1SS381
1SS390
1SV172
1SV214
1SV214
1SV215
1SV228
1SV231
1SV232
1SV233
1SV234
1SV239
Microsemi
Microsemi
Infineon
Triquint
RFMD
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Toshiba
Rohm
Toshiba
Rohm
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Sanyo
Toshiba
BLA6H0912-500
BLA6H0912-500
BLF881
BGA7127
BGA7127
BLF871
BLF878
BLF878
BLL6H0514-25
BLA6G1011-200R
BLA6G1011-200R
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLL6H0514-26
BA591
BA591
BA277
BA891
BAP50-04
BB149
BB149A
BB153
BB201
BB152
BB148
BAP70-03
BAP64-04
BB145B
Microwave
Microwave
Broadcast
MMIC
MMIC
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
BS diode
BS diode
BS diode
BS diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
Varicap
1SV241
1SV246
1SV247
1SV248
1SV249
1SV250
1SV251
1SV252
1SV254
1SV263
1SV264
1SV266
1SV267
1SV269
1SV270
1SV271
1SV278
1SV279
1SV282
1SV282
1SV283
1SV283
1SV284
1SV288
1SV290
1SV294
1SV305
1SV307
1SV308
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
Toshiba
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Toshiba
Toshiba
Toshiba
BAP64-02
BAP64-04W
BAP70-02
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BAP50-04W
BB179
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BB148
BB156
BAP50-03
BB179
BB179
BB178
BB187
BB178
BB187
BB156
BB152
BB182
BAP70-03
BB202
BAP51-03
BAP51-02
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
Varicap
PIN diode
PIN diode
Cross-references
& replacements
Manufacturer type
99
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
1SV322
1T362
1T362A
1T363A
1T368A
1T369
1T379
1T397
1T399
1T402
1T403
1T404A
1T405A
1T406
1T408
2729-125
2729-170
2731-100M
2931-150
2F1G20DS
2F1G20DS
2F1G20P
2F1G22DS
2F1G22DS
2F1G22DS
2F1G23P
2F1G23P
2F1G24D
2F1G24D
2F1G24DS
2F722DS
2F8718P
2F8719DS
2F8720DS
2F8723P
2F8734P
2N3330
2N3331
2N4220
2N4856
2N4857
2N4858
2N5114
2N5115
2N5116
2N5432
2N5433
2N5434
2N5457
2N5458
2N5459
2N5653
2N5654
2SC4094
2SC4095
2SC4182
2SC4184
2SC4185
2SC4186
2SC4226
2SC4227
2SC4228
2SC4247
2SC4248
2SC4315
2SC4320
2SC4321
2SC4325
2SC4394
2SC4536
2SC4537
2SC4592
2SC4593
2SC4703
2SC4784
2SC4807
Toshiba
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
Microsemi
Microsemi
Microsemi
Microsemi
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
NEC
Renesas
Renesas
Renesas
NEC
Renesas
Renesas
BB202LX
BB149
BB149A
BB153
BB148
BB152
BB131
BB152
BB148
BB179B
BB178
BB187
BB187
BB182
BB187
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
CGD1042H
CGD1040Hi
CGY1041
CGD1042H
CGD1042Hi
CGD982HCi
CGY1043
CGY1041
CGD1044Hi
CGD985HCi
CGD1044H
BGD816L
BGY885A
BGD812
BGD814
BGY887
CGY888C
J176
J176
BF245A
BSR56
BSR57
BSR58
J174
J175
J175
J108
J108
J109
BF245A
BF245A
BF245B
J112
J111
BFG520/XR
BFG520/XR
BFS17W
BFS17W
BFS17W
BFR92AW
PRF957
BFQ67W
BFS505
BFR92AW
BFR92AW
BFG520/XR
BFG520/XR
BFQ67W
BFS505
PRF957
BFQ19
BFR93AW
BFG520/XR
BFS520
BFQ19
BFS505
BFQ18A
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Microwave
Microwave
Microwave
Microwave
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PD
CATV PP
CATV PP
CATV PD
CATV PD
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PP
CATV PP
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
2SC4842
2SC4899
2SC4900
2SC4901
2SC4988
2SC5011
2SC5012
2SC5065
2SC5085
2SC5087
2SC5088
2SC5090
2SC5092
2SC5095
2SC5107
2SC5463
2SC5593
2SC5594
2SC5623
2SC5624
2SC5631
2SC6023
2SJ105GR
2SK163-K
2SK163-L
2SK163-M
2SK163-N
2SK210BL
2SK370BL
2SK370GR
2SK370V
2SK381
2SK43
2SK435
2SK508
3SK290
AH118
AH118
AH215
BA592
BA595
BA595
BA597
BA885
BA892
BA892-02V
BA892-02V
BA892V-02V-GS08
BA895
BAR14-1
BAR15-1
BAR16-1
BAR17
BAR50-02L
BAR50-02V
BAR50-02V
BAR50-02V
BAR50-03W
BAR60
BAR61
BAR63
BAR63-02L
BAR63-02L
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-05
BAR63-05W
BAR63V-02V-GS08
BAR63V-05W-GS08
BAR64-02LRH
BAR64-02V
BAR64-02W
BAR64-03W
BAR64-04
BAR64-04W
Toshiba
Renesas
Renesas
Renesas
Renesas
NEC
NEC
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Renesas
Renesas
Renesas
Renesas
Renesas
Sanyo
Standard
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Triquint
Triquint
Triquint
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
BFG540W/XR
BFS505
BFG520/XR
BFS520
BFQ540
BFG540W/XR
BFG540W/XR
PRF957
PRF957
BFG520/XR
BFG540W/XR
BFS520
BFG520/XR
BFS505
BFS505
BFQ67W
BFG410W
BFG425W
BFG410W
BFG425W
BFQ540
BFG424W
J177
J113
J113
J113
J113
PMBFJ309
J109
J109
J109
J113
J113
J113
PMBFJ308
BF998WR
BGA7124
BGA7024
BGA7130
BA591
BAP51-03
BAP70-03
BAP70-03
BAP70-03
BA891
BA277
BA891
BA891
BAP70-02
BAP70-03
BAP70-03
BAP70-03
BAP50-03
BAP50LX
BAP50-02
BAP50-03
BAP50-05
BAP70-02
BAP50-03
BAP50-03
BAP63-03
BAP63-02
BAP63LX
BAP63-02
BAP63-02
BAP63-03
BAP63-05W
BAP63-05W
BAP63-02
BAP63-05W
BAP64LX
BAP64-02
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 5-7
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
MMIC
MMIC
MMIC
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
100
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64V-02V-GS08
BAR64V-04-GS08
BAR64V-05-GS08
BAR64V-06-GS08
BAR64V-06W-GS08
BAR65-02L
BAR65-02V
BAR65-02W
BAR65-03W
BAR65V-02V-GS08
BAR66
BAR67-02W
BAR67-03W
BAT18-04
BB304C
BB304M
BB305C
BB305M
BB403M
BB501C
BB501M
BB502C
BB502M
BB503C
BB503M
BB535
BB545
BB555
BB565
BB601M
BB639
BB639
BB640
BB641
BB659
BB664
BB664
BB669
BB814
BB831
BB833
BB835
BBY58-02V
BBY65
BF1005R
BF1005S
BF1005SR
BF1009S
BF1009SR
BF1009SW
BF2030
BF2030
BF2030
BF2030R
BF2030R
BF2030R
BF2030W
BF2030W
BF2030W
BF2040
BF2040R
BF2040W
BF244A
BF244B
BF244C
BF247A
BF247B
BF247C
BF256A
BF256B
BF256C
BF5020
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Vishay
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Infineon
Infineon
Infineon
Infineon
Renesas
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Infineon
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64-02
BAP64-04
BAP64-05
BAP64-06
BAP64-06W
BAP65LX
BAP65-02
BAP65-02
BAP65-03
BAP65-02
BAP1321-04
BAP1321-02
BAP1321-03
BAT18
BF1201WR
BF1201R
BF1201WR
BF1201R
BF909R
BF1202WR
BF1202R
BF1202WR
BF1202R
BF1202WR
BF1202R
BB149
BB149A
BB179B
BB179
BF1202
BB148
BB153
BB152
BB152
BB178
BB178
BB187
BB152
BB201
BB131
BB131
BB131
BB202
BB202
BF1105R
BF1105
BF1105R
BF1109
BF1109R
BF1109WR
BF1101
BF1211
BF1212
BF1101R
BF1211R
BF1212R
BF1101WR
BF1211WR
BF1212WR
BF909
BF909R
BF909WR
BF245A
BF245B
BF245C
J108
J108
J108
BF245A
BF245B
BF245C
BF1212
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Varicap
Varicap
Varicap
Varicap
FET
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
BF5020R
BF5020W
BF5030W
BF770A
BF771
BF771W
BF772
BF775
BF775A
BF775W
BF851A
BF851B
BF851C
BF994S
BF996S
BF998
BF998
BF998-GS08
BF998R
BF998R
BF998R-GS08
BF998RW
BF998W
BFG135A
BFG193
BFG194
BFG196
BFG19S
BFG235
BFP180
BFP181
BFP181T-GS08
BFP182
BFP183
BFP183R
BFP183T-GS08
BFP183TW-GS08
BFP193
BFP193W
BFP196T-GS08
BFP196TR-GS08
BFP196TRW-GS08
BFP196TW-GS08
BFP196W
BFP280
BFP405
BFP420
BFP450
BFP67-GS08
BFP67R-GS08
BFP740
BFP740F
BFP81
BFP92A-GS08
BFP93A
BFP93A-GS08
BFQ193
BFQ19S
BFQ67-GS08
BFR106
BFR180
BFR180W
BFR181
BFR181T-GS08
BFR181TW-GS08
BFR181W
BFR182
BFR182W
BFR183
BFR183T-GS08
BFR183TW-GS08
BFR183W
BFR193
BFR193TW-GS08
BFR193W
BFR196T-GS08
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Standard
Standard
Standard
Vishay
Vishay
Infineon
Vishay
Vishay
Vishay
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Vishay
Vishay
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Vishay
Infineon
Vishay
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Vishay
Infineon
Vishay
BF1212R
BF1212WR
BF909WR
BFR93A
PBR951
BFS540
BFG540
BFR92A
BFR92A
BFR92AW
BF861A
BF861B
BF861C
BF994S
BF996S
BF998
BF998
BF998
BF998R
BF998R
BF998R
BF998WR
BF998WR
BFG135
BFG198
BFG31
BFG541
BFG97
BFG135
BFG505/X
BFG67/X
BFG67/X
BFG67/X
BFG520/X
BFG520/XR
BFG520/X
BFG520W/X
BFG540/X
BFG540W/XR
BFG540/X
BFG540/XR
BFG540W/XR
BFG540W/X
BFG540W/XR
BFG505/X
BFG410W
BFG425W
BFG480W
BFG67/X
BFG67/X
BFU725F
BFU725F
BFG92A/X
BFG92A/X
BFG93A/X
BFG93A/X
BFQ540
BFQ19
BFQ67W
BFR106
BFR505
BFS505
BFR520
BFR520
BFS520
BFS520
PBR941
PRF947
PBR951
PBR951
PRF957
PRF957
PBR951
PRF957
PRF957
BFR540
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Cross-references
& replacements
Manufacturer type
101
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
BFR196TW-GS08
BFR35AP
BFR92AL
BFR92AW-GS08
BFR92P
BFR92W
BFR93A
BFR93AL
BFR93AW
BFR93AW-GS08
BFR93-GS08
BFS17-GS08
BFS17-GS08
BFS17L
BFS17P
BFS17W
BFS17W-GS08
BFS481
BFS483
BFT92
BFT93
BG3123
BG3123R
BG3130
BG3130R
BG3430R
BG5120K
BG5130R
BG5412K
BG5412K
BGA615
BGA715
BGA915
BIC701C
BIC701M
BIC702C
BIC702M
BIC801M
BSR111
BSR112
BSR113
BSR174
BSR175
BSR176
BSR177
CA901
CA901A
CA922
CA922A
CMM6004-SC
CMM6004-SC
CMY91
CMY91
CXE1089Z
CXE1089Z
D10040180GT
D10040180GTH
D10040200GT
D10040200GTH
D10040200P1
D10040200PH1
D10040220GT
D10040220GTH
D10040230P1
D10040230PH1
D10040240GT
D10040240GTH
D10040250GT
D10040250GTH
D10040270GT
D10040270GTH
D10040270GTL
D5540185
D7540185
D7540200
D8640185
Vishay
Infineon
Freescale
Vishay
Infineon
Infineon
Infineon
Freescale
Infineon
Vishay
Vishay
Vishay
Vishay
Freescale
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Renesas
Renesas
Renesas
Renesas
Renesas
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Mimix
Mimix
Infineon
Infineon
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Standard
Standard
Standard
Standard
BFS540
BFR92A
BFR92A
BFR92AW
BFR92A
BFR92AW
BFR93A
BFR93A
BFR93AW
BFR93AW
BFR93A
BFS17
BFS17A
BFS17
BFS17A
BFS17W
BFS17W
BFM505
BFM520
BFT92
BFT93
BF1203
BF1203
BF1214
BF1214
BF1207
BF1210
BF1206
BF1205C
BF1208D
BGU7007
BGU8007
BGU8007
BF1105WR
BF1105R
BF1105WR
BF1105R
BF1105
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BGX885N
BGX885N
BGD885
BGD885
BGA7124
BGA7024
BGA2022
BGA2022
BGA6489
BGA6589
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
BGD502
BGD702
BGD704
BGD802
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
FET
MMIC
MMIC
MMIC
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
CATV PPA
CATV PPA
CATV PD
CATV PD
MMIC
MMIC
MMIC
WB trs 1-4
MMIC
MMIC
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
D8740180GT
D8740180GTH
D8740220GT
D8740220GTH
D8740240GT
D8740240GTH
D8740250GT
D8740250GTH
D8740270GT
D8740270GTH
D8740320GT
D8740320GTH
DME500
EC2C03C
F2046
F2048
F2247
FSD273TA
FSD273TA
HBFP0405
HBFP0420
HBFP0450
HMC454ST89E
HSC277
HSMP3800
HSMP3802
HSMP3804
HSMP3810
HSMP3814
HSMP381B
HSMP381C
HSMP381F
HSMP3820
HSMP3822
HSMP3830
HSMP3832
HSMP3833
HSMP3834
HSMP3860
HSMP3862
HSMP3864
HSMP386B
HSMP386E
HSMP386L
HSMP3880
HSMP3890
HSMP3892
HSMP3894
HSMP3895
HSMP389B
HSMP389C
HSMP389F
HVB14S
HVC131
HVC132
HVC200A
HVC200A
HVC202A
HVC202B
HVC300A
HVC300B
HVC306A
HVC306B
HVC355B
HVC359
HVC363A
HVC376B
HVC376B
HVD132
HVU131
HVU132
HVU202(A)
HVU202(A)
HVU300A
HVU307
HVU315
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Microsemi
Sanyo
POLYFET
POLYFET
POLYFET
Skyworks
Skyworks
Agilent
Agilent
Agilent
Hittite
Renesas
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
CGD942C
CGD942C
CGD942C
CGD942C
CGD944C
CGD944C
CGD944C
CGD944C
CGD944C
CGD944C
CGD888C
CGD888C
BLAH0912-500
BB145B
BLF542
BLF543
BLF522
BB148
BB178
BFG410W
BFG425W
BFG480W
BGA7127
BA277
BAP70-03
BAP50-04
BAP50-05
BAP50-03
BAP50-05
BAP50-03
BAP50-05
BAP64-05W
BAP1321-03
BAP1321-04
BAP64-03
BAP64-04
BAP64-06
BAP64-05
BAP50-03
BAP50-04
BAP50-05
BAP50-02
BAP50-04W
BAP50-05W
BAP51-03
BAP51-03
BAP64-04
BAP64-05
BAP51-02
BAP51-02
BAP64-04
BAP51-05W
BAP50-04W
BAP65-02
BAP51-02
BB178
BB187
BB179
BB179B
BB182
BB182
BB187
BB187
BB145B
BB202
BB178
BB198
BB202
BAP51-02
BAP65-03
BAP51-03
BB149
BB149A
BB152
BB148
BB148
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
Microwave
Varicap
Broadcast
Broadcast
Broadcast
Varicap
Varicap
WB trs 5-7
WB trs 5-7
WB trs 5-7
MMIC
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
102
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
HVU316
HVU363A
HVU363A
HVU363B
IB0810M100
IB0912L30
IB0912L70
IB0912M210
IB0912M500
IB0912M600
IB1011L15
IB1011L220
IB1011L40
IB1011L470
IB1011M140
IB1011M190
IB1011M250
IB1011S190
IB1011S250
IB1012S10
IB1012S20
IB2729M5
IB2729M90
IB2731M110
IB2731MH110
IB2931MH155
IB3134M100
IB3135MH100
IBP1214M700
IBP1214M700
IBP3135M150
IDM175CW300
IDM500CW150
IDM500CW200
IDM500CW300
IDM500CW80
ILD1011M15
ILD1011M150
ILD1011M15HV
ILD1011M160HV
ILD1011M250
ILD1011M30
ILD1011M400
ILD1011M450HV
ILD1011M550HV
ILD1214M10
ILD2731M140
ILD3135M120
ILP1214EL200
INA-51063
J270
J308
J309
J310
JDP2S01E
JDP2S01U
JDP2S02AFS
JDP2S02AS
JDP2S02T
JDP2S04E
JDS2S03S
JTDA150A
KP2310R
KTK920BT
KTK920T
KV1835E
LC421
MA2S077
MA2S357
MA2S357
MA2S372
MA2S374
MA2SV01
MA357
MA366
MA368
Renesas
Renesas
Renesas
Renesas
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Agilent
Standard
Standard
Standard
Standard
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Microsemi
Toko
KEC
KEC
Toko
POLYFET
Standard
Matsushita
Matsushita
Matsushita
Matsushita
Renesas
Matsushita
Matsushita
Matsushita
BB131
BB148
BB153
BB148
BLF871
BLA6H0514-25
BLA6H0514-25
BLA6H0514-25
BLA6H0912-500
BLA6H0912-500
BLA6H0514-25
BLA6G1011-200R
BLA6H0514-25
BLA6H0912-500
BLA6G1011-200R
BLA6G1011-200R
BLA6G1011-200R
BLA6G1011-200R
BLA6G1011-200R
BLA6H0514-25
BLA6H0514-25
BLS6G2731-6G
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
BLS6G3135S-120
BLS6G3135S-120
BLL6H1214-500
BLL6H1214-500
BLS6G3135S-120
BLF278
BLF881
BLF888
BLF878
BLF871
BLL6H0514-25
BLA6G1011-200R
BLA6H0514-25
BLA6G1011-200R
BLA6G1011-200R
BLA6H0514-25
BLA6H0912-500
BLA6H0912-500
BLA6H1011-600
BLL6H0514-25
BLS6G2731-120
BLS6G3135S-120
BLS7G2933P-200
BGA2001
J177
J108
J109
J110
BAP65-02
BAP65-03
BAP51-02
BAP51-03
BAP63-02
BAP50-02
BA891
BLF177
BAP64-04W
BF1108
BF1108R
BB199
BLF544
BA277
BB178
BB187
BB179
BB182
BB202
BB153
BB148
BB131
Varicap
Varicap
Varicap
Varicap
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
MMIC
FET
FET
FET
FET
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
Broadcast
PIN diode
FET
FET
Varicap
Broadcast
BS diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
MA372
MA372
MA4CP101A
MA4P274-1141
MA4P275-1141
MA4P275CK-287
MA4P277-1141
MA4P278-287
MA4P789-1141
MA4P789ST-287
MAX2659
MAX2659
MAX2659
MC7712
MC7716
MC7722
MC7726
MC-7831
MC7831-HA
MC-7831-HA
MC-7832
MC7832-HA
MC-7832-HA
MC-7833
MC-7836
MC-7836
MC-7845
MC-7846
MC-7847
MC7852
MC7866
MC-7881
MC-7882
MC-7883
MC-7884
MC-7891
MC7893
MC7893
MC-7893
MC7894
MC7894
MC-7894
MC7896
MC7896
MC-7896
MCH4009
MD7P19130
MD7P19130H
MD7P19130H (2)
MDS400
MDS800
MHW10186N
MHW10236N
MHW10247AN
MHW10276N
MHW1224
MHW1244
MHW1253LA
MHW1254L
MHW1254LA
MHW1304L
MHW1304LA
MHW1304LAN
MHW1346
MHW1353LA
MHW1354LA
MHW5182A
MHW5185B
MHW5222A
MHW5272A
MHW5342A
MHW5342T
MHW6182
MHW6182-6
MHW6182T
MHW6185B
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Maxim
Maxim
Maxim
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
Sanyo
Freescale
Freescale
Freescale
Microsemi
Microsemi
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BB149
BB149A
BAP65-03
BAP51-03
BAP65-03
BAP65-05
BAP70-03
BAP70-03
BAP1321-03
BAP1321-04
BGU7003
BGU7005
BGU7007
BGY785A
BGY787
BGY785A
BGY787
BGY885A
BGY1085A
BGY1085A
BGY887
CGY1041
CGY1041
BGY887B
BGY887B
CGY1047
BGD802
CGD942C
CGD944C
BGY885A
BGD816L
BGD802
BGD814
CGD942C
CGD944C
CGD1042H
CGD1042Hi
CGD982HCi
CGD1042H
CGD1044Hi
CGD985HCi
CDG1044H
CGD1046Hi
CGD987HCi
CGD1044H
BFG424F
BLF6G20LS-110
BLF6G20LS-75
BLF6G20(LS)-180RN
BLA6H0912-500
BLA6H1011-600
BGY1085A
CGY1043
CGD1044H
CGY1047
BGY67
BGY67A
BGY67A
BGY68
BGY68
BGY68
BGY68
BGY68
BGY67A
BGY67A
BGY68
BGY585A
BGD502
BGY587
BGY587B
BGY588N
BGY588N
BGY585A
BGY685A
BGY585A
BGD502
Varicap
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
MMIC
MMIC
MMIC
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
WB trs 5-7
Base station
Base station
Base station
Microwave
Microwave
CATV PP
CATV PP
CATV PD
CATV PP
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV PPA
CATV PD
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
CATV PPA
CATV PPA
CATV PD
103
Cross-references
& replacements
Manufacturer type
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MHW6185T
MHW6205
MHW6222
MHW6222B
MHW6222T
MHW6272
MHW6272T
MHW6342
MHW6342T
MHW7182B
MHW7182C
MHW7185C2
MHW7185CL
MHW7205C
MHW7205CL
MHW7205CLN
MHW7222
MHW7222A
MHW7222B
MHW7242A
MHW7272A
MHW7292
MHW7292A
MHW7292AN
MHW7342
MHW8142
MHW8182B
MHW8182C
MHW8182CN
MHW8185
MHW8185L
MHW8188AN
MHW8205
MHW820L
MHW8222BN
MHW8227A
MHW8227AN
MHW8247A
MHW8247AN
MHW8292
MHW8342
MHW8342N
MHW9146
MHW9182B
MHW9182C
MHW9182CN
MHW9186
MHW9186A
MHW9187N
MHW9188AN
MHW9188N
MHW9227AN
MHW9242A
MHW9247
MHW9247A
MHW9247AN
MHW9247N
MHWJ5272A
MHWJ7185A
MHWJ7205A
MHWJ7292
MHWJ9182
MMBF4391
MMBF4392
MMBF4393
MMBF4860
MMBF5484
MMBFJ113
MMBFJ174
MMBFJ175
MMBFJ176
MMBFJ177
MMBFJ308
MMBFJ309
MMBFJ310
MMBFU310
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BGD502
BGD704
BGY587
BGY687
BGY587
BGY587B
BGY587B
BGY588N
BGY588N
BGY785A
BGY785A
BGD712
BGD712
BGD714
BGD714
BGD714
BGY787
BGY787
BGY787
BGE787B
BGE787B
BGE787B
BGE787B
BGE787B
BGE788
BGY883
BGY885A
BGY885A
BGY885A
BGD814
BGD812
CGD942C
BGD814
BGD814
BGY887
CGD942C
CGD942C
CGD944C
CGD944C
BGY887B
BGY888
CGY888C
BGY883
BGY1085A
BGY1085A
BGY1085A
BGY885A
BGY885A
CGD942C
CGD942C
CGD942C
CGD942C
CGD1042
CGD944C
CGD944C
CGD944C
CGD944C
BGY587B
BGD712
BGD714
BGE787B
BGY1085A
PMBF4391
PMBF4392
PMBF4393
PMBFJ112
BFR31
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ310
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PD
CATV PPA/HG
CATV PPA
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
MMBR5031L
MMBR5179L
MMBR571L
MMBR901L
MMBR911L
MMBR920L
MMBR931L
MMBR941BL
MMBR941L
MMBR951AL
MMBR951L
MMBV105GLT1
MMBV109LT1
MMG2001NT1
MMG2001T1
MMG3004NT1
MMG3014
MMG3014
MPAL2731M15
MPAL2731M30
MPAL3035M15
MPAL3035M30
MPF102
MPF970
MPF971
MRF10005
MRF1000MB
MRF10031
MRF1004MB
MRF10120
MRF10150
MRF10350
MRF10502
MRF1090MB
MRF1150MA
MRF1150MB
MRF134
MRF136
MRF136Y
MRF137
MRF140
MRF141
MRF141G
MRF148A
MRF150
MRF151
MRF151A
MRF151G
MRF154
MRF157
MRF158
MRF160
MRF166C
MRF166W
MRF171A
MRF173
MRF173CQ
MRF174
MRF175GU
MRF175GV
MRF175LU
MRF176GU
MRF176GV
MRF177
MRF18030ALR3(1)
MRF18030ALR3(1)
MRF18030ALSR3(1)
MRF18030ALSR3(1)
MRF18030BLR3(1)
MRF18030BLR3(1)
MRF18030BLSR3(1)
MRF18030BLSR3(1)
MRF18060AL(2)
MRF18060BL(2)
MRF18085AL(2)
MRF18085BL (2)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
ONSemicond.
ONSemicond.
Freescale
Freescale
Freescale
Freescale
Freescale
Integra
Integra
Integra
Integra
Standard
Standard
Standard
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BFS17
BFS17A
PBR951
BFR92A
BFR93A
BFR93A
BFT25A
PBR941
PBR941
PBR951
PBR951
BB156
BB148
BGD816L
BGD816L
BGA7127
BGA7124
BGA7024
BLS6G2731-6G
BLS6G2731-6G
BLS6G2731-6G
BLS6G2731-6G
BF245A
J174
J176
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLF871
BLF871
BLF881
BLF881
BLF177
BLF177
BLF278
BLF175
BLF177
BLF177
BLF177
BLF278
BLF574
BLF574
BLF871
BLF871
BLF871
BLF881
BLF881
BLF871
BLF871
BLF881
BLF881
BLF278
BLF871
BLF881
BLF573S
BLF871
BLF6G21-30
BLF6G20-45
BLF6G21-30
BLF6G20-45
BLF6G21-30
BLF6G20-45
BLF6G21-30
BLF6G20-45
BLC6G20-75
BLC6G20-75
BLC6G20-75
BLF7G20L(S)-300P
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Varicap
Varicap
CATV PD
CATV PD
MMIC
MMIC
MMIC
Microwave
Microwave
Microwave
Microwave
FET
FET
FET
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
104
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MRF18085BL(2)
MRF18090AR3(1)
MRF18090B (2)
MRF18090B(2)
MRF19030L(2)
MRF19030L(2)
MRF19045L(2)
MRF19060L(2)
MRF19085LR3(1)
MRF19085LSR3(1)
MRF19090R3 (1)
MRF19090R3(1)
MRF19090SR3 (1)
MRF19090SR3(1)
MRF19125 (2)
MRF19125(2)
MRF21010LR1(1)
MRF21010LSR1(1)
MRF21030LR3(1)
MRF21030LSR3(1)
MRF21045LR3(1)
MRF21045LSR3(1)
MRF21060L(2)
MRF21085L(2)
MRF21090(2)
MRF21120R6(1)
MRF21125(2)
MRF21125SR3(1)
MRF21180R6(1)
MRF275G
MRF275L
MRF281SR1(1)
MRF281ZR1(1)
MRF282SR1(1)
MRF282ZR1(1)
MRF284LR1(1)
MRF284LSR1(1)
MRF313
MRF314
MRF316
MRF317
MRF321
MRF323
MRF327
MRF372 (3)
MRF373ALR1 (1)
MRF373ALR1 (2)
MRF373ALSR1 (1)
MRF374A (1)
MRF377H (1)
MRF377H (2)
MRF377H(2)
MRF392
MRF393
MRF421
MRF422
MRF426
MRF428
MRF429
MRF448
MRF454
MRF455
MRF577
MRF5811L
MRF5P20180HR6(1)
MRF5P21045NR1 (1)
MRF5P21180HR6 (1)
MRF5P21180HR6(1)
MRF5S19060N(2)
MRF5S19090HR3(1)
MRF5S19090HSR3(1)
MRF5S19100H (2)
MRF5S19100H(2)
MRF5S19130H (2)
MRF5S19130H(2)
MRF5S19150H (2)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BLC6G20-75
BLF6G20-110
BLF7G20L(S)-300P
BLF6G20-110
BLF6G21-30
BLF6G20-45
BLF6G20-45
BLF6G20-45
BLF6G20-110
BLF6G20-110
BLF7G20L(S)-300P
BLF6G20-110
BLF7G20L(S)-300P
BLF6G20-110
BLF6G20(LS)-110
BLF6G20-140
BLF3G21-6
BLF3G21-6
BLF6G22-30
BLF6G22-45
BLF6G22-45
BLF6G22-45
BLF6G22-75
BLF6G22-100
BLF6G22-100
BLF6G22-130
BLF6G22-130
BLF6G22-130
BLF6G22-180
BLF881
BLF871
BLF6G21-6
BLF6G21-6
BLF1822-10
BLF1822-10
BLF3G21-30
BLF3G21-30
BLF871
BLF881
BLF871
BLF871
BLF871
BLF871
BLF871
BLF881
BLF871
BLF878
BLF871
BLF881
BLF888
BLF878
BLF872
BLF881
BLF871
BLF871
BLF177
BLF871
BLF177
BLF177
BLF573S
BLF871
BLF871
PRF957
BFG93A/X
BLF6G20-180P
BLD6G22L(S)-50
BLF6G22(LS)-180RN
BLF6G20-180P
BLF6G20-75
BLF6G20-110
BLF6G20-110
BLF7G20L(S)-140P
BLF6G20-110
BLF6G20(LS)-110
BLF6G20-140
BLF6G20LS-140
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Base station
Broadcast
Base station
Broadcast
Base station
Broadcast
Base station
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
WB trs 1-4
WB trs 1-4
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
MRF5S19150H(2)
MRF5S21045N (2)
MRF5S21045N(2)
MRF5S21090HR3(1)
MRF5S21090HSR3(1)
MRF5S21100HR3(1)
MRF5S21100HSR3(1)
MRF5S21130HR3(1)
MRF5S21130HSR3(1)
MRF5S21150H(2)
MRF5S9150H (2)
MRF6P18190HR6(1)
MRF6P21190HR6 (1)
MRF6P21190HR6(1)
MRF6P3300H (2)
MRF6P3300H(2)
MRF6S18060N(2)
MRF6S18100N(2)
MRF6S18140H(2)
MRF6S19060N(2)
MRF6S19100H (2)
MRF6S19100H(2)
MRF6S19100N(2)
MRF6S19120H (2)
MRF6S19120H(2)
MRF6S19140H (2)
MRF6S19140H(2)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
MRF6S19200H (2)
Freescale
MRF6S20010
MRF6S20010
MRF6S20010N (2)
MRF6S20010N(2)
MRF6S20010N(2)
MRF6S21050L(2)
MRF6S21060N (2)
MRF6S21060N(2)
MRF6S21100H (2)
MRF6S21100H(2)
MRF6S21100N (2)
MRF6S21100N(2)
MRF6S21140H (2)
MRF6S21140H(2)
MRF6S21190H
MRF6S21190H
MRF6S21190H (2)
MRF6S23100H (2)
MRF6S23100H (2)
MRF6S27015N
MRF6S27015N (2)
MRF6S27015N (2)
MRF6S27050HR3
MRF6S27050HSR3
MRF6S27085H
MRF6S27085H (2)
MRF6S27085HR3
MRF6S27085HS
MRF6S27085HSR3
MRF6V10010N (1)
MRF6V10250HS (1)
MRF6V12250H (2)
MRF6V12500H (2)
MRF6V14300H (2)
MRF6V2010N (2)
MRF6V2010N(2)
MRF6V2010NBR1(18a)
MRF6V2010NR1(18a)
MRF6V2150N (2)
MRF6V2150N(2)
MRF6V2150NBR1(18a)
MRF6V2150NR1(18a)
MRF6V2300N (2)
MRF6V2300N(2)
MRF6V2300N(2)
MRF6V3090N (4)
MRF6V4300N (2)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BLF6G22-150P
BLD6G22L(S)-50
BLF1822-10
BLF6G22-100
BLF6G22-100
BLF6G22-100
BLF6G22-100
BLF6G22-130
BLF6G22-130
BLF6G22-150P
BLF6G10(LS)-160RN
BLF6G20-180P
BLF7G22LS-130
BLF6G20-180P
BLF888
BLF878
BLF6G20-75
BLF6G20-110
BLF6G20-140
BLF6G20-75
BLF7G20L(S)-140P
BLF6G20-110
BLF6G20-110
BLF7G20L(S)-140P
BLF6G20-110
BLF6G20LS-75
BLF6G20-140
BLF6G20-180PN,
BLF7G20L(S)-200
BLM6G22-30
BLM6G22-30G
BLM6G22-30
BLF6G21-6
BLF1822-10
BLF6G22-45
BLF6G22LS-75
BLF6G22-75
BLF6G22LS-100
BLF6G22-100
BLF6G22LS-100
BLF6G22-100
BLF6G22L(S)-130
BLF6G22-130
BLF6G22-180P
BLF6G22-180PN
BLF7G22L(S)-200
BLF7G27L(S)-75P
BLF7G27L(S)-75P
BLF6G27-10
BLF6G27-10(G)
BLF6G27-10(G)
BLF6G27-45
BLF6G27S-45
BLF6G27LS-135
BLF7G27L(S)-140
BLF6G27-135
BLF6G27LS-75
BLF6G27LS-135
BLL6H0514-25
BLA0912-250R
BLA6H0912-500
BLA6H0912-500
BLL6H1214-500
BLF571
BLF244
BLF872
BLF871
BLF871
BLF177
BLF882
BLF881
BLF573S
BLF369
BLF378
BLF871
BLF573S
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Microwave
Microwave
Microwave
Microwave
Microwave
Base station
Broadcast
Broadcast
Broadcast
Base station
Broadcast
Broadcast
Broadcast
Base station
Broadcast
Broadcast
Broadcast
Base station
105
Cross-references
& replacements
Base station
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MRF6VP11KH (1)
MRF6VP21KH (1)
MRF6VP2600H (1)
MRF6VP2600HR6(18o)
MRF6VP3450
MRF6VP3450H (4)
MRF6VP41KH (2)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Base station
Base station
Base station
Broadcast
Broadcast
Base station
Base station
MRF7S15100H (2)
Freescale
MRF7S18125AHS
MRF7S18170H (2)
MRF7S18170H(2)
MRF7S19080H (2)
MRF7S19080H(2)
MRF7S19080HS
MRF7S19100
MRF7S19100N (2)
MRF7S19100N(2)
MRF7S19120N(1)
MRF7S19120NR1 (1)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
MRF7S19170H (2)
Freescale
MRF7S19170H(2)
MRF7S19210H
MRF7S21080H (2)
MRF7S21110H (2)
MRF7S21110HS
MRF7S21150H (2)
MRF7S21170
MRF7S21170H (2)
MRF7S21210H (2)
MRF7S27130H (2)
MRF7S35015HSR3 (1)
MRF7S35120HSR3 (1)
MRF7S38010H
MRF7S38010H (2)
MRF7S38040H
MRF7S38040H (2)
MRF7S38040HR3
MRF7S38040HSR3
MRF8S18120H (2)
MRF9030L (2)
MRF9030N (2)
MRF9135L (2)
MRF917
MRF9200L (2)
MRF9210R3 (1)
MRF927
MRF9411L
MRF947
MRF947A
MRF9511L
MRF957
MRFE6P3300H
MRFE6P3300H (2)
MRFE6S9125N
MRFE6S9125N (2)
MRFE6S9130H (2)
MRFE6S9135H (2)
MRFE6S9135HS
MRFE6S9160H (2)
MRFE6S9201H (2)
MRFE6S9205HS
MS1003
MS1004
MS1007
MS1008
MS1011
MS1051
MS1076
MS1078
MS1079
MS1204
MS1277
MS1278
MS1279
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
BLF578
BLF578
BLF871
BLF881
BLF878
BLF878
BLF578
BLF6G15L(S)-40BRN/
BLF6G15L(S)-250PBRN
BLF6G20LS-140
BLF7G20L(S)-200
BLF6G22-180
BLF6G20(LS)-110
BLF6G20-110
BLF6G20LS-75
BLF6G20LS-110
BLF6G20LS-75
BLF6G20-110
BLF6G20-110
BLF6G20LS-140
BLF6G20-180PN,
BLF7G20L(S)-200
BLF6G20-180
BLF6G20-230PRN
BLF6G22LS-100
BLF6G22L(S)-130
BLF6G22LS-100
BLF7G22LS-130
BLF6G22LS-100
BLF6G22-180PN
BLF7G22L(S)-250P
BLF7G27L(S)-140
BLS6G3135-20
BLS6G3135-120
BLF6G38-10G
BLF6G38(S)-25
BLF6G38LS-50
BLF6G38(LS)-50
BLF6G28-50
BLF6G28LS-51
BLF7G20L(S)-250P
BLF6G10(LS)-160RN
BLF6G10(LS)-160RN
BLF6G10(LS)-135RN
BFQ67W
BLF6G10L(S)-260PRN
BLF6G10L(S)-260PRN
BFS25A
BFG520/X
BFS520
PRF947
BFG540/X
PRF957
BLF878
BLF573
BLF6G10LS-135R
BLF6G10(LS)-135RN
BLF6G10(LS)-135RN
BLF6G10(LS)-200RN
BLF6G10LS-135R
BLF6G10(LS)-160RN
BLF6G10(LS)-200RN
BLF6G10LS-200RN
BLF645
BLF888
BLF871
BLF871
BLF888
BLF871
BLF888
BLF871
BLF888
BLF645
BLF888
BLF888
BLF888
MS1280
MS1329
MS1453
MS1503
MS1506
MS1507
MS1509
MS1511
MS1533
MS2001
MS2003
MS2003
MS2005
MS2010
MS2176
MS2200
MS2207
MS2210
MS2215
MS2267
MS2321
MS24221
MS2441
MS2472
MS2473
MS2553
MS2575
MS3024
MSC1015MP
MSC1175M
MSC1400M
MSC1450M
MT4S200T
MT4S200U
MT4S34U
MV2109G
MW6IC2240N (2)
MW6S004NT1 (1)
MW6S010N (2)
MW7IC2725GNR1
MW7IC2725N
MW7IC2725N
MW7IC2725NB
MW7IC2725NR1
MW7IC2750GNR1
MW7IC2750N (3)
MW7IC2750NR1
MW7IC3825GN
MW7IC3825N
MW7IC3825N (3)
MW7IC3825NB
MW7IC915N (1)
NESG3032M14
OS8740230W
PD55012-E
PD55025-E
PD55035-E
PD57018-E
PD57030-E
PD57045-E
PD57060-E
PD57070-E
PD85015-E
PD85025C
PD85025-E
PD85035C
PD85035-E
PRF134
PRF134
PRF136
PRF136
PRF947B
PRF947B
PTF 041501E - 150 W
PTF 041501F - 150 W
PTF 080101M - 10 W
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Toshiba
Toshiba
Toshiba
ONSemicond.
Freescale
Freescale
Freescale
Freescale
Freescale
Infineon
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
NEC
RFMD
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
POLYFET
Infineon
POLYFET
Infineon
Motorola
Infineon
Infineon
Infineon
Infineon
BLF888
BLF878
BLF881
BLF871
BLF881
BLF881
BLF871
BLF878
BLF645
BLF6G22-45
BLF6G22-45
BLF6G22-45
BLF6G22-45
BLF6G22-45
BLF878
BLA6H0912-500
BLA6H0912-500
BLA6G1011-200R
BLF177
BLA6G1011-200R
BLL6H0514-25
BLA6G1011-200R
BLAH0912-500
BLAH0912-500
BLA6H1011-600
BLL6H0514-25
BLL6H0514-25
BLF6G22-45
BLL6H0514-25
BLA6G1011-200R
BLAH0912-500
BLA6H0912-500
BFG424W
BFG425W
BFG410W
BB182LX
BLF6G22LS-75
BLF6G21-10G
BLL6H0514-25
BLF6G27-10G
BLF6G27-10G
BLF6G27-10G
BLF6G27-10
BLF6G27-10
BLF6G27LS-75
BLF6G27(LS)-75
BLF6G27-75
BLF6G38S-25
BLF6G38-25
BLF6G38(S)-25
BLF6G38-25
BLF6G10L(S)-260PRN
BFU725F
BGO807C
BLF571
BLF571
BLF571
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLF571
BLF571
BLF571
BLF571
BLF571
BLF242
BLF242
BLF244
BLF244
PRF947
PRF947
BLF881S
BLF881S
BLF571
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Microwave
Microwave
Microwave
Microwave
WB trs 5-7
WB trs 5-7
WB trs 5-7
Varicap
Base station
Base station
Microwave
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 5-7
CATV OR
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
WB trs 1-4
WB trs 1-4
Broadcast
Broadcast
Broadcast
106
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Microwave
Microwave
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 1-4
Base station
Base station
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
PTF 080101S - 10 W
PTF 081301E - 130 W
PTF 180101S - 10 W
PTF 191601E - 160 W
PTF 210101M - 10 W
PTF 210451E - 45 W
PTF 210451F - 45 W
PTF 240101S - 10 W
PTF041501E-150 W
PTF041501E-150 W
PTF041501F-150 W
PTF041501F-150 W
PTF080101M-10 W
PTF080101M-10 W
PTF080101S-10 W
PTF080101S-10 W
PTF081301E-130 W
PTF081301E-130 W
PTF081301F-130 W
PTF081301F-130 W
PTF082001E-200 W
PTF082001E-200 W
PTF180101
PTF180101
PTFA 041501E 175 W
PTFA 041501F 175 W
PTFA 041501GL - 175 W
PTFA 041501HL - 175 W
PTFA 043002E - 300 W
PTFA 070601E - 60 W
PTFA 070601F - 60 W
PTFA 072401EL - 240 W
PTFA 072401FL - 240 W
PTFA 080551E - 55 W
PTFA 080551F - 55 W
PTFA 081501E - 150 W
PTFA 081501F - 150 W
PTFA 082201E - 220 W
PTFA 082201F - 220 W
PTFA 091201E - 120 W
PTFA 091201F - 120 W
PTFA 091201GL - 120 W
PTFA 091201HL - 120 W
PTFA 092201E - 220 W
PTFA 092201F - 220 W
PTFA 092211EL - 250 W
PTFA 092211FL - 250 W
PTFA 092213 EL - 250 W
PTFA 092213 FL - 250 W
PTFA 142401EL - 240 W
PTFA 142401FL - 240 W
PTFA 180701E - 70 W
PTFA 180701F - 70 W
PTFA 181001E - 100 W
PTFA 181001F - 100 W
PTFA 181001GL - 100 W
PTFA 191001E - 100 W
PTFA 191001F - 100 W
PTFA 192001E - 200 W
PTFA 192001F - 200 W
PTFA 192401E - 240 W
PTFA 192401F - 240 W
PTFA 210301E - 30 W
PTFA 210701E - 70 W
PTFA 210701F - 70 W
PTFA 211001E - 100 W
PTFA 211801E - 180 W
PTFA 211801F - 180 W
PTFA 212001E - 200 W
PTFA 212001F - 200 W
PTFA 212002E - 200 W
PTFA 212401E - 240 W
PTFA 212401F - 240 W
PTFA 240451E - 45 W
PTFA 260451E - 45 W
PTFA 260851E - 85 W
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Freescale
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
BLF571
BLF881
BLF6G20-40
BLF7G20L(S)-300P
BLD6G22L(S)-50
BLF7G22L(S)-200
BLF7G22L(S)-200
BLF7G27L(S)-100
BLF647
BLF647
BLF647
BLF647
BLF1043
BLF1043
BLF1043
BLF1043
BLF4G10-120
BLF4G10-120
BLF4G10-120
BLF4G10-120
BLF6G10-200
BLF6G10-200
BLF6G21-10G
BLF6G21-10G
BLF888
BLF888
BLF888
BLF888
blf573
BLF878
BLF878
BLF573
BLF573
BLF878
BLF878
BLF881
BLF881
BLF573
BLF573
BLF881
BLF881
BLF881
BLF881
BLF573
BLF573
BLF573
BLF573
BLF573
BLF573
BLF6G15L(S)-250PBRN
BLF6G15L(S)-250PBRN
BLF6G20(LS)-110
BLF6G20(LS)-110
BLF6G20(LS)-180RN
BLF6G20(LS)-180RN
BLF6G20(LS)-180RN
BLF6G20(LS)-110
BLF6G20(LS)-110
BLF6G20-180PN
BLF6G20-180PN
BLF6G20-180PN
BLF6G20-180PN
BLD6G22L(S)-50
BLF6G22LS-75
BLF6G22LS-75
BLF6G22LS-100
BLF7G22L(S)-250P
BLF7G22L(S)-250P
BLF6G22-180PN
BLF6G22-180PN
BLF7G22LS-130
BLF6G22-180PN
BLF6G22-180PN
BLF7G27L(S)-100
BLF6G27(LS)-75
BLF6G27L(S)-45BN
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
PTFA 260851F - 85 W
PTFA 261301E - 130 W
PTFA 261301F - 130 W
PTFA 261702E - 170 W
PTFA043002E-300 W
PTFA043002E-300 W
PTFA080551E-55 W
PTFA080551F-55 W
PTFA081501E-150 W
PTFA081501F-150 W
PTFA091201E-120 W
PTFA091201F-120 W
PTMA 080152M - 20 W
PTMA 080302M - 40 W
PTMA 210452EL - 45 W
PTMA 210452FL - 45 W
PZFJ108
PZFJ109
PZFJ110
R0605250L
R0605250L
R0605300L
R0605300L
R1005250L
R2005200P12
R2005240
R2005240
R2005240P12
R2005350L
RN142G
RN142S
RN242CS
RN731V
RN739D
RN739F
S10040200P
S10040220GT
S10040220P
S10040230GT
S10040240P
S10040280GT
S10040340
S505T
S505TR
S505TRW
S5540220
S595T
S595TR
S595TRW
S7540185
S7540215
S8740180GT
S8740190
S8740190
S8740200P
S8740220
S8740220GT
S8740220P
S8740230
S8740240GT
S8740240P
S8740240P12
S8740260GT
S8740280GT
S8740340
S8740340PT
S949T
S949TR
S949TRW
S974T
S974T-GS08
S974TR
S974TR-GS08
S974TRW
S974TRW-GS08
SA701
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Standard
Standard
Standard
Standard
RFMD
Standard
RFMD
RFMD
RFMD
Standard
RFMD
RFMD
RFMD
Rohm
Rohm
Rohm
Rohm
Rohm
Rohm
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Vishay
Vishay
Vishay
Standard
Vishay
Vishay
Vishay
Standard
Standard
RFMD
Standard
RFMD
RFMD
Standard
RFMD
RFMD
Standard
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
POLYFET
BLF6G27(LS)-135
BLF7G27L(S)-200P
BLF7G27L(S)-100
BLF7G27L(S)-140
BLF878
BLF878
BLF6G10-45
BLF6G10-45
BLF6G10-160
BLF6G10-160
BLF4G10-120
BLF4G10-120
BLF871
BLF881
BLF6G22(S)-45
BLF6G22(S)-45
J108
J109
J110
BGY66B
BGS67A
BGY68
BGY68
BGY66B
BGY67
BGY67A
BGY67A
BGY67A
BGR269
BAP1321-03
BAP1321-02
BAP51LX
BAP50-03
BAP50-04
BAP50-04W
CGY1041
CGY1041
CGY1041
CGY1043
CGY1043
CGY1047
CGY1034
BF1101
BF1101R
BF1101WR
BGY587
BF1105
BF1105R
BF1105WR
BGY785A
BGY787
BGY885A
BGD812
BGY885A
BGY887
BGD814
BGY887
BGY887
BGD816L
BGY887
BGY887
BGY887
CGY887A
CGY887B
CGY888C
CGY888C
BF1109
BF1109R
BF1109WR
BF1109
BF1109
BF1109R
BF1109R
BF1109WR
BF1109WR
BLF145
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Base station
Base station
FET
FET
FET
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
FET
FET
FET
CATV PPA
FET
FET
FET
CATV PPA
CATV PPA
CATV PP
CATV PD
CATV PP
CATV PP
CATV PD
CATV PP
CATV PP
CATV PD
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
FET
FET
FET
FET
FET
FET
FET
FET
FET
Broadcast
107
Cross-references
& replacements
Manufacturer type
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
SA701
SA741
SD1018
SD1018-06
SD1019-05
SD1422
SD1485
SD56120
SD56120M
SD57030
SD57030-01
SD57120
SD702
SDV701Q
SDV704Q
SDV705Q
SE701
SGA8343Z
SK701
SK701
SK702
SM341
SM704
SM704
SMP1302-004
SMP1302-005
SMP1302-011
SMP1302-074
SMP1302-075
SMP1302-079
SMP1304-001
SMP1304-011
SMP1307-001
SMP1307-011
SMP1320-004
SMP1320-011
SMP1320-074
SMP1321-001
SMP1321-005
SMP1321-011
SMP1321-075
SMP1321-079
SMP1322-004
SMP1322-011
SMP1322-074
SMP1322-079
SMP1340-011
SMP1340-079
SMP1352-011
SMP1352-079
SMV1235-004
SMV1236-004
SR341
SR341
SR401
SR401
SR401
SR703
SR704U
SST111
SST112
SST113
SST174
SST175
SST176
SST177
SST201
SST202
SST203
SST308
SST309
SST310
SST4391
SST4392
SST4393
SST4856
POLYFET
POLYFET
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
ST
ST
ST
ST
ST
POLYFET
AUK
AUK
AUK
POLYFET
Sirenza
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
BLF245
BLF175
BLF881
BLF881
BLF645
BLF871
BLF888
BLF871
BLF881
BLL6H0514-25
BLL6H0514-25
BLF578
BLF246B
BB179
BB178
BB182
BLF245B
BFG425W
BLF544B
BLF545
BLF546
BLF177
BLF147
BLF246
BAP50-05
BAP50-04
BAP50-03
BAP50-05W
BAP50-04W
BAP50-02
BAP70-03
BAP70-03
BAP70-03
BAP70-03
BAP65-05
BAP65-03
BAP65-05W
BAP1321-03
BAP1321-04
BAP1321-03
BAP1321-04
BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB181
BB156
BLF378
BLF278
BLF248
BLF348
BLF368
BLF547
BLF548
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BFT46
BFR31
BFR30
PMBFJ308
PMBFJ309
PMBFJ310
PMBF4391
PMBF4392
PMBF4393
BSR56
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Broadcast
Broadcast
Varicap
Varicap
Varicap
Broadcast
WB trs 5-7
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
SST4857
SST4859
SST4860
SST4861
ST704
ST744
ST744
SVC201SPA
SXA-389B
SXA-389B
TAN150
TAN250A
TAN300
TBB1016
TCS450
TCS800
TMF3201J
TMF3202Z
TMPF4091
TMPF4092
TMPF4093
TMPF4391
TMPF4392
TMPF4393
TMPFB246A
TMPFB246B
TMPFB246C
TMPFJ111
TMPFJ112
TMPFJ113
TMPFJ174
TMPFJ175
TMPFJ176
TMPFJ177
TPR400
TPR500
TPR500A
TSDF54040
TSDF54040-GS08
TSDF54040X-GS08
TSDF54040XR-GS08
UF2805B
UF28100H
UF28100M
UF28100V
UF2810P
UF28150J
UF2815B
UF2820P
UF2820R
UF2840G
UF2840P
UMIL100
UMIL100A
UMIL60
UMIL80
uPC2709
uPC2711
uPC2712
uPC2745
uPC2746
uPC2748
uPC2771
uPC8112
UTV200
UTV8100B
VAM80
VMIL100
VRF148A
VRF150
VRF151
VRF151G
Standard
Standard
Standard
Standard
POLYFET
POLYFET
POLYFET
Sanyo
RFMD
RFMD
Microsemi
Microsemi
Microsemi
Renesas
Microsemi
Microsemi
AUK
AUK
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Microsemi
Microsemi
Microsemi
Vishay
Vishay
Vishay
Vishay
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Microsemi
Microsemi
Microsemi
Microsemi
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
BSR57
BSR56
BSR57
BSR58
BLF346
BLF276
BLF277
BB187
BGA7124
BGA7024
BLF177
BLA6G1011-200R
BLA6G1011-200R
BF1204
BLA6H0912-500
BLA6H1011-600
BF1204
BF1202WR
PMBF4391
PMBF4392
PMBF4393
PMBF4391
PMBF4392
PMBF4393
BSR56
BSR57
BSR58
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BLAH0912-500
BLA6H0912-501
BLA6H0912-502
BF1102
BF1102
BF1102
BF1102R
BLF871
BLF871
BLF871
BLF871
BLF871
BLF881
BLF871
BLF871
BLF871
BLF881
BLF881
BLF871
BLF871
BLF878
BLF878
BGA2709
BGA2711
BGA2712
BGA2001
BGA2001
BGA2748
BGA2771
BGA2022
BLF571
BLF645
BLF878
BLF645
BLF881
BLF177
BLF177
BLF878
FET
FET
FET
FET
Broadcast
Broadcast
Broadcast
Varicap
MMIC
MMIC
Broadcast
Microwave
Microwave
FET
Microwave
Microwave
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Microwave
Microwave
Microwave
FET
FET
FET
FET
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
108
5.2
Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer discontinued type

Abbreviations:
BS diode
Band switch diode
CATV
Community antenna television system
FET
Field effect transistor
Varicap
Varicap diode
WB trs
Wideband transistor
RFP trs
RF Power transistor
Product family NXP
Replacement type NXP
NXP discontinued type
Product family NXP
BS diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
WB trs
WB trs
FET
FET
FET
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
BA277
BA591
BAP142LX
BAP51LX
BAP51LX
BAP55LX
BB152
BB145B
BB145B
BB135
BB187
BB178LX
BB179BLX
BB179LX
BB181LX
BB182
BB182LX
BB187LX
BB149
BB202LX
BB207
BBY40
BF1203
BFS17
BFS17
BF861A
BF861C
BF992
BFM505
BFM520
BFM505
BFM520
BFS17A
BFG198
BFG198
BFG25AW/X
BFG410W
BFG425W
BFG505/X
BFG505
BFG520W/X
BFG590/X
BFG590
BFG590
BFG67
BFG92A/X
BFG92A/X
BFG93A/X
BFG35
BFR92A
BFR92A
BFR92AW
BFR92A
BFR93AW
BFR93A
BFU725F/N1
BFU725F/N1
BFU725F
BGA2031
BGD102/02
BGD102/04
BGD104
BGD104/04
BGD502/01
BGD502/03
BGD502/05
BGD502/07
BGD502/6M
BGD502/C7
BGD502/R
BGD504
BGD504/01
BGD504/02
BGD504/09
BGD602
BGD602/02
BGD602/07
BGD602/09
BGD602/14
BGD602D
BGD702D
BGD702D/08
BGD704/01
BGD704/07S
BGD704/S9
BGD704N
BGD802/09
BGD802N
BGD802N/07
BGD804N
BGD804N/02
BGD902
BGD902/07
BGD902L
BGD904
BGD904/02
BGD904/07
BGD904L
BGD906
BGE788
BGE847BO
BGE847BO/FC
BGE847BO/FC0
BGE847BO/FC0
BGE847BO/FC1
BGE847BO/SC
BGE847BO/SC0
BGE887BO
BGE887BO/FC
BGE887BO/FC1
BGE887BO/SC
BGO807
BGO847/01
BGO847/01
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
BFU725F/N1
BGA2031/1
BGD502
BGD502
BGD704
BGD704
BGD502
BGD502
BGD502
BGD502
BGD702
BGD502
BGD502
BGD704
BGD704
BGD704
BGD704
BGD702
BGD702
BGD702
BGD702
BGD702
BGD712
BGD712
BGD712
BGD704
BGD704
BGD704
BGD714
BGD802
BGD812
BGD812
BGD814
BGD814
BGD812
BGD902
BGD812
BGD814
BGD904
BGD904
BGD814
CGD942C
BGE788C
BGO827
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO807C
BGO847
BGO847
Cross-references
& replacements

BA277-01
BA792
BAP142L
BAP51-01
BAP51L
BAP55L
BB132
BB145
BB145B-01
BB151
BB157
BB178L
BB179BL
BB179L
BB181L
BB182B
BB182L
BB187L
BB190
BB202L
BB804
BBY42
BF1203
BF689K
BF763
BF851A
BF851C
BF992/01
BFC505
BFC520
BFET505
BFET520
BFG17A
BFG197
BFG197/X
BFG25AW/XR
BFG410W/CA
BFG425W/CA
BFG505/XR
BFG505W/XR
BFG520W/XR
BFG590/XR
BFG590W
BFG590W/XR
BFG67/XR
BFG92A
BFG92A/XR
BFG93A/XR
BFQ34/01
BFR92
BFR92AR
BFR92AT
BFR93
BFR93AT
BFR93R
BFU510
BFU540
109
110
Product family NXP
Product family NXP
BGO847/FC0
BGO847/FC01
BGO847/SC0
BGQ34/01
BGU2003
BGX885/02
BGY1085A/07
BGY584A
BGY585A/01
BGY586
BGY586/05
BGY587/01
BGY587/02
BGY587/07
BGY587/09
BGY587B/01
BGY587B/02
BGY587B/09
BGY588
BGY588/04
BGY66B/04
BGY67/04
BGY67/09
BGY67/14
BGY67/19
BGY67A/04
BGY67A/14
BGY68/01
BGY685A/07
BGY685AD
BGY685AL
BGY687/07
BGY687/14
BGY687B
BGY687B/02
BGY785A/07
BGY785A/09
BGY785AD
BGY785AD/06
BGY785AD/8M
BGY785AD/8M
BGY787/02
BGY787/07
BGY787/09
BGY847BO
BGY847BO/SC
BGY84A
BGY84A/04
BGY84A/05
BGY85
BGY85A
BGY85A/04
BGY85A/05
BGY85H/01
BGY86
BGY86/05
BGY87
BGY87/J1
BGY87B
BGY88
BGY88/04
BGY88/04
BGY88/07
BGY887/02
BGY887BO
BGY887BO/FC
BGY887BO/SC
BLC6G22-100
BLF1822-10
BLF2043
BLF2045
BLF4G08LS-160A
BLF4G08LS-160A
BLS2731-110T
BLS2731-110
BLS2731-20
CATV
CATV
CATV
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
BGO827/SC0
BGO827/SC0
BGO827/SC0
BFG35
BGA2003
BGX885N
BGY1085A
BGY585A
BGY585A
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587B
BGY587B
BGY587B
BGY588N
BGY588N
BGY66B
BGY67
BGY67
BGY67
BGY67
BGY67A
BGY67A
BGY68
BGY685A
BGY785A
BGY785A
BGY687
BGY687
BGE787B
BGE787B
BGY785A
BGY785A
BGY785A
BGY785A
BGY885A
BGY885A
BGY787
BGY787
BGY787
BGO827
BGO827/SC0
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY587
BGY587
BGY587
BGY587
BGY587B
BGY588N
BGY588N
BGY588N
BGY588N
BGY887
BGO827
BGO827/FC0
BGO827/SC0
BLF6G22-100
BLF6G21-10G
BLF6G21-10G
BLF6G20-45BLF6G22-45
BLF6G10LS-160RN
BLF6G10LS-160RN
BLS6G2731-120
BLS6G2731-120
BLS6G2731-6G
BLS2731-50
BLF3G22-30
CGD914
CGY887A
CGY887B
GD923
OM7650
OM7670
ON4520/09
ON4520/2
ON4594/M5
ON4749
ON4831-2
ON4869
ON4876
ON4890
ON4990
PMBT3640/AT
PN4392
PN4393
TFF1004HN
RFP trs
RFP trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
WB trs
FET
FET
Satellite IC
BLS6G2731-6G
BLF6G22-45
CGD1042H
CGY1043
CGY1047
CGD942C
BGY588C
BGE788C
BGY687
BGY687
BGY585A
BGY588N
BGY885A
BGY587
BGY1085A
BGD712
BGD885
BFS17
PMBF4392
PMBF4393
TFF1014HN
6. Packing and packaging information

Packing quantities per package with relevant ordering code
Package
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOD323/SC-76
1.7 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel

8 mm tape and reel
SOD523/SC-79
1.2 x 0.8 x 0.6
3,000
10,000
8,000
20,000
115
135
315
335
8 mm tape and reel

8 mm tape and reel
2 mm pitch tape and reel
2 mm pitch tape and reel
SOD882D
1.0x0.6x0.4
15000
315
reel
SOT23
2.9 x 1.3 x 0.9
3,000
10,000
215
235
8 mm tape and reel

8 mm tape and reel
SOT54
4.6 x 3.9 x 5.1
5,000
5,000
10,000
10,000
112
412
116
126
bulk, delta pinning

bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
SOT89/SC-62
4.5 x 2.5 x 1.5
1,000
4,000
115
135
12 mm tape and reel

12 mm tape and reel
SOT115
44.5 x 13.65 x 20.4
100
112
4 tray/box
SOT121B
28.45 x 28.45 x 7.27
20
112
blister, tray
SOT143(N/R)
2.9 x 1.3 x 0.9
3,000
10,000
215
235
8 mm tape and reel

8 mm tape and reel
SOT223/SC-73
6.7 x 3.5 x 1.6
1,000
4,000
115
135
12 mm tape and reel

12 mm tape and reel
SOT307
10 x 10 x 1.75
1,500
96
480
518
551
557
13" tape and reel dry pack

1 tray dry pack
5 tray dry pack
SOT323/SC-70
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel

8 mm tape and reel
SOT341
5.3 x 10.2
1,000
658
118
112
13'' tape and reel

tube
SOT343(N/R)
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel

8 mm tape and reel
SOT343F
2.1 x 1.25 x 0.7
3,000
115
8 mm tape and reel
SOT360
6.5 x 4.4 x 0.9
2,500
118
16 mm tape and reel
SOT363/SC-88
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel

8 mm tape and reel
SOT363
2.1 x 2.0 x 0.9
3,000
10,000
115
135
reel
SOT401
5 x 5 x 1.4
2,000
360
118
151
13" tape and reel

1 tray
SOT403
5.0 x 4.4 x 0.9
2,500
118
12 mm tape and reel
SOT416/SC-75
1.6 x 0.8 x 0.75
3,000
115
8 mm tape and reel
SOT467B
9.78 x 18.29 x 4.67
60
20
112
112
blister, tray
blister, tray
SOT467C
20.45 x 18.54 x 4.67
60
20
112
112
blister, tray
blister, tray
SOT502A
19.8 x 9.4 x 4.1
60
300
112
135
blister, tray
reel
Packing and
packaging information
6.1
111
112
Package
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOT502B
19.8 x 9.4 x 4.1
60
100
112
118
blister, tray
reel
SOT538A
5.1 x 4.1 x 2.6
160
112
blister, tray
SOT539A
31.25 x 9.4 x 4.65
60
300
112
135
blister, tray
reel
SOT540A
21.85 x 10.2 x 5.4
60
112
blister, tray
SOT608A
10.1 x 10.1 x 4.2
60
60
300
112
112
135
blister, tray
blister, tray
reel
SOT608B
10.1 x 10.1 x 4.2
60
100
300
112
118
135
blister, tray
reel
reel
SOT616
4.0 x 4.0 x 0.85
6,000
1,500
100
118
115
551
12 mm tape and reel

8 mm tape and reel
tray
SOT617
5 x 5 x 0.85
6,000
118
Tape and reel
SOT618
6 x 6 x 0.85
4,000
1,000
490
2,450
118
515
551
157
13" tape and reel

1 tray dry pack
5 tray
SOT638
14 x 14 x 1
1,000
90
450
518
551
557

1 tray dry pack
5 tray dry pack
SOT650-1
3.0 x 3.0 x 0.85
6000
118
reel
SOT666
1.6 x 1.2 x 0.7
4,000
115
8 mm tape and reel
SOT684
8 x 8 x 0.85
1,000
260
260
1,300
518
151
551
157

1 tray
1 tray dry pack
5 tray dry pack
SOT724
8.7 x 3.9 x 1.47
2,500
118
16 mm tape and reel
SOT753
2.9 x 1.5 x 1.0
3,000
125
8 mm tape and reel
SOT763-1
2.5x3.5x0.85
3,000
6,000
115
135
reel
SOT778
6.0 x 6.0 x 0.85
490
4,000
551
518
tray
multiple trays
SOT822-1
15.9 x 11 x 3.6
180
127
tube
SOT834-1
15.9 x 11 x 3.15
180
127
tube
SOT886
1.45 x 1.0 x 0.5
5000
115
8 mm tape and reel
SOT891
1.0 x 1.0 x 0.5
5000
132
8 mm tape and reel
SOT908
3.0 x 3.0 x 0.85
6000
118
12 mm tape and reel
SOT922-1
17.4 x 9.4 x 3.88
60
112
blister, tray
SOT975B
6.5 x 6.5 x 3.3
180
100
112
118
blister, tray
Tape and reel
SOT975C
6.5 x 6.5 x 3.3
180
100
112
118
blister, tray
Tape and reel
SOT979A
31.25 x 10.2 x 5.3
60
112
blister, tray
SOT1110A
41.28 x 17.12 x 5.36
60
100
112
118
blister, tray
reel
SOT1110B
41.15 x 36.32 x 4.68
60
112
blister, tray
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
SOT1112A
16.65 x 20.32 x 4.205
60
100
112
118
blister, tray
reel
SOT1112B
16.65 x 15.22 x 4.205
60
100
112
118
blister, tray
reel
SOT1120A
9.4 x 19.815 x 4.1
60
100
112
118
blister, tray
reel
SOT1120B
9.4 x 19.815 x 4.1
60
100
112
118
blister, tray
reel
SOT1121A
34.16 x 19.94 x 4.75
60
100
112
118
blister, tray
reel
SOT1121B
20.70 x 19.94 x 4.75
60
100
112
118
blister,tray
reel
SOT1121C
13.4 x 20.575 x 3.785
DEV
DEV
DEV
SOT1130A
20.45 x 17.12 x 4.65
60
112
blister, tray
SOT1130B
9.91 x 17.12 x 4.65
60
112
blister, tray
SOT1135A
20.45 x 19.94 x 4.65
60
100
112
118
blister, tray
reel
SOT1135B
16.65 x 9.78 x 4.205
60
100
112
118
blister, tray
reel
SOT1135C
16.65 x 9.78 x 4.205
60
100
112
118
blister, tray
reel
SOT1138
19.48 x 20.57 x 3.9
DEV
DEV
DEV
SOT1179
4.0 x 6.0 x 0.85
DEV
DEV
DEV
SOT1198-1
10.0 x 5.5 x 0.8
1000
115
reel
SOT1204
13.2 x 20.57 x 3.9
DEV
DEV
DEV
SOT1240B
21.60 x 20.575 x 3.875
DEV
DEV
DEV
SOT1240C
18.00 x 20.575 x 3.875
DEV
DEV
DEV
SOT1242B
22.60 x 32.45 x 4.455
DEV
DEV
DEV
SOT1242C
18.00 x 32.45 x 4.455
DEV
DEV
DEV
SOT1244B
19.43 x 20.575 x 3.875
DEV
DEV
DEV
SOT1244C
18.00 x 20.575 x 3.875
DEV
DEV
DEV
Packing and
Package
113
6.2
Marking codes list
Search online on marking code: http://www.nxp.com/package/

In alphabetical order of marking code
In case a % is given in the marking code, it means this type can be assembled at different assembly sites.
p = made in Hong-Kong
t = made in Malaysia
W = made in China
Marking code
10%
13%
20%
21%
22%
24%
25%
26%
28%
29%
30%
31%
32%
33%
34%
38%
39%
40%
41%
42%
47%
48%
49%
50%
1
2
7
8
9
%1W
%3A
%4A
%5A
%6G
%6J
%6K
%6K
%6L
%6S
%6W
%6X
%6Y
%AB
%E7
%E8
%E9
%EA
%EB
%EC
%ED
%M1
%M2
%M3
%M4
%M5
%M6
%M7
%M8
%M9
114
Type
BAT18
BB207
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BFR505
BFR520
BFR540
BFT25A
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ308
PMBFJ309
PMBFJ310
BA277
BB182
BA891
BB178
BB179
BAP51-05W
BGA6289
BGA6489
BGA6589
PMBF4393
PMBF4391
BGA7024
PMBF4392
BGA7027
PMBFJ176
PMBFJ175
PMBFJ174
PMBFJ177
BF1210
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BF908
BF908R
BF909
BF909R
BF909A
BF909AR
BF904A
BF904AR
BSS83
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOD523
SOD523
SOD523
SOD523
SOD523
SOT323
SOT89
SOT89
SOT89
SOT23
SOT23
SOT89
SOT23
SOT89
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
Marking code
%MA
%MB
%MC
%MD
%ME
%MF
%MG
%MH
%MK
%ML
%MM
%MN
%MP
%MR
%MS
%MT
%MU
%MV
%MW
%MX
%MY
%MZ
%VA
%VB
1B%
1C%
1N%
2A%
2L
2N
2R
4A
4K%
4L%
4W%
5K%
5W%
6F%
6K%
6W%
7K%
8K%
A1
A1
A1
A1
A2
A2
A2
A2
A2%
A3
A3
A3
A3%
A5
A5%
A6%
A7%
Type
BF991
BF992
BF904
BF904R
BFG505
BFG520
BFG540
BFG590
BFG505/X
BFG520/X
BFG540/X
BFG590/X
BFG520/XR
BFG540/XR
BFG10
BFG10/X
BFG25A/X
BFG67/X
BFG92A/X
BFG93A/X
BF1100
BF1100R
BGU7041
BGU7042
BGA2717
BAP50-05
BAP70-04W
BF862
BF1208
BF1206F
BF1207F
BF1208D
BAP64-04
BAP50-04
BAP64-04W
BAP64-05
BAP64-05W
BAP1321-04
BAP64-06
BAP50-04W
BAP65-05
BAP70-05
BA591
BB208-02
BGA2001
BAP64Q
BAP70Q
BAT18
BB184
BB208-03
BGA2022
BAP64-03
BB198
BGA2003
BGA2031/1
BAP51-03
BGA2011
BGA2012
BFG310W/XR
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOT363
SOT23
SOT323
SOT23
SOT666
SOT666
SOT666
SOT666
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT23
SOD323
SOD523
SOT343
SOT753
SOT753
SOT23
SOD523
SOD323
SOT363
SOD323
SOD523
SOT343
SOT363
SOD323
SOT363
SOT363
SOT343
Marking code
A8
A8%
A8%
A9
AC
B3
B6B6
B6%
B7%
BC%
BFG135
BFG198
BFG31
BFG35
BFG541
BFG591
BFG94
BFG97
BLT50
BLT70
BLT80
BLT81
C1%
C2%
C4%
C5%
D1
D2
D2
D3
D3
D4
D4%
D5
D6
D7
D8
E1%
E1%
E1%
E2%
E2%
E3%
E6%
FB
FF
FG
G2
G2%
G3%
G4%
G5%
K1
K2
K4
K5
K6
K7
Type
BAP50-03
BFG325W/XR
PMBFJ620
BAP70-03
BGU7005
BGU7003
BGA2715
BGU7007
BFU725F
BGA2716
BFQ591
BFG135
BFG198
BFG31
BFG35
BFG541
BFG591
BFG94
BFG97
BLT50
BLT70
BLT80
BLT81
BGM1011
BGM1012
BGM1013
BGM1014
BFU610F
BFU630F
BAP63-03
BFU660F
BAP65-03
BFU690F
BFR30/B
BFU710F
BFU730F
BFU760F
BFU790F
BFS17
BFS17/FD
BFS17W
BFS17A
BGA2712
BGA2709
BFG17A
BFQ19
BFQ18A
BFQ149
BA278
BGA2711
BGA2748
BGA2771
BGA2776
BAP51-02
BAP51-05W
BAP50-02
BAP63-02
BAP65-02
BAP1321-02
Package
SOD323
SOT343
SOT363
SOD323
SOT886
SOT891
SOT363
SOT886
SOT343F
SOT363
SOT89
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT363
SOT363
SOT363
SOT363
SOT343F
SOT343F
SOD323
SOT343F
SOD323
SOT343F
SOT23
SOT343F
SOT343F
SOT343F
SOT343F
SOT23
SOT23
SOT323
SOT23
SOT363
SOT363
SOT23
SOT89
SOT89
SOT89
SOD523
SOT363
SOT363
SOT363
SOT363
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
Type
BAP70-02
BB199
BB202LX
BAP51LX
BB202
BF1203
BB178LX
BF1204
BB179LX
BF1205
BB179BLX
BB181LX
BF1206
BB182LX
BB187LX
BF1208
BF1201WR
BF1201
BF1201R
BF1202
BF1202WR
BF1202R
BF1211
BF1212
BF1211R
BF1212R
PMBFJ308
PMBFJ309
BFR30
PMBFJ310
BF1207
BFR31
BFT46
BF861A
BF861B
BF861C
BF1215
BF1216
BF1205C
BF545A
BF545B
BF545C
BF1218
BF556A
BF556B
BF556C
BGA2802
BF998WR
BGA2803
BF904WR
BGA2851
BF908WR
BGA2869
BF909WR
BF1100WR
BF909AWR
BF994S
BF904AWR
BF996S
BF1211WR
BF1212WR
BF998
BF998R
BB181
BFR505T
BFM505
BFS505
BFG505W/X
BFR520T
BFM520
BFS520
BFG520W
BFG520W/X
BFQ540
BFS540
BFS25A
BFG540W/X
Package
SOD523
SOD523
SOD882D
SOD882D
SOD523
SOT363
SOD882D
SOT363
SOD882D
SOT363
SOD882D
SOD882D
SOT363
SOD882D
SOD882D
SOT363
SOT343
SOT143
SOT143
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOT23
SOT23
SOT363
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT363
SOT23
SOT23
SOT23
SOT363
SOT23
SOT23
SOT23
SOT363
SOT343
SOT363
SOT343
SOT363
SOT343
SOT363
SOT343
SOT343
SOT343
SOT143
SOT343
SOT143
SOT343
SOT343
SOT143
SOT143
SOD523
SOT416
SOT363
SOT323
SOT343
SOT416
SOT363
SOT323
SOT343
SOT343
SOT89
SOT323
SOT323
SOT343
Marking code
N8
N9
N9%
NA
NA%
NB
NB%
NC
NC%
ND
ND%
NE
NE%
NF%
NG%
NH%
P08
P09
P1
P1
P10
P11
P12
P13
P2%
P2%
P3
P4
P5
P5
P6
P7
P8
P9
PB
PC
PE
PF
PL
R2%
R2%
R5
R7%
R8%
S
S1%
S2%
S2%
S3%
S6%
S7%
S8%
S9%
SB%
SC%
SC%
SD%
SE%
T5
UY
V1
V1%
V10
V2%
V2%
V3%
V4%
V6%
V8
VA
VA
VB
VC
VC
VC%
VD%
VD%
Type
BFG540W/XR
BFG540W
BAP70AM
BF1105WR
BF1105R
BF1109WR
BF1109R
BF1101WR
BF1101R
BFG424W
BF1101
BFG424F
BF1105
BF1109
BF1108
BF1108R
PMBFJ108
PMBFJ109
BFG21W
BB131
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
BFR92A
BFR92AW
BFG403W
BFG410W
BB135
BFG425W
BFG480W
BB147
BB148
BB149
BB152
BB153
BB155
BB156
BB149A
BFR93A
BFR93AW
BFR93AR
BFR106
BFG93A
BAP64-02
BFG310/XR
BBY40
BFG325/XR
BF1107
BF510
BF511
BF512
BF513
BF1214
BGU7031
BB201
BGU7032
BGU7033
BFG10W/X
BGU7004
BFG25AW/X
BFT25
BFT25A
BFQ67
BFQ67W
BFG67
BAP64-06W
BAP65-05W
BAP1321-03
BF1217WR
BF1217WR
BF1118W
BF1118WR
BF1118WR
BF1118
BF1118R
BF1118R
Package
SOT343
SOT343
SOT363
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOT343
SOD323
SOT23
SOT23
SOT23
SOT23
SOT23
SOT323
SOT343
SOT343
SOD323
SOT343
SOT343
SOD523
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOT23
SOT323
SOT23
SOT23
SOT143
SOD523
SOT143
SOT23
SOT143
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT23
SOT363
SOT363
SOT343
SOT886
SOT343
SOT23
SOT23
SOT23
SOT323
SOT143
SOT323
SOT323
SOD323
SOT343
SOT343R
SOT343
SOT343
SOT343R
SOT143
SOT143
SOT143R
Marking code
W1
W1%
W1%
W2%
W4%
W6%
W7%
W9%
X
X1%
X1%
Type
BF1102
BFT92
BFT92W
BF1102R
BAP50-05W
BAP51-04W
BAP51-06W
BAP63-05W
BB187
BFT93
BFT93W
Package
SOT363
SOT23
SOT323
SOT363
SOT323
SOT323
SOT323
SOT323
SOD523
SOT23
SOT323
Packing and
Marking code
K8
K9
L1
L2
L2
L2%
L3
L3%
L4
L4%
L5
L6
L6%
L7
L8
L9%
LA
LA%
LB%
LD%
LE
LE%
LF%
LG%
LH%
LK%
M08
M09
M1%
M10
M2%
M2%
M3%
M33
M34
M35
M4%
M5%
M6%
M65
M66
M67
M7%
M84
M85
M86
MA%
MB
MB%
MC
MC%
MD
MD%
ME
MF
MG
MG%
MH
MH%
MK
ML
MO%
MO%
N
N0
N0%
N0%
N1
N2
N2%
N2%
N3
N4
N4
N4%
N6%
N7
115
7. Abbreviations
3-way
AM
ASIC
ASYM
BPF
BUC
CATV
CDMA
CMMB
CMOS
CQS
DAB
DECT
DiSEqC
DSB
DVB
EDGE
ESD
FET
FM
GaAs
GaN
Gen
GPS
GSM
HBT
HDTV
HF
HFC
HFET
HPA
HVQFN
Abbreviations
IF
ISM
LDMOS
LNA
LNB
LO
LPF
MESFET
MMIC
MMPP
116
Doherty design using 3 discrete transistors

Amplitude Modulation
Application Specific Integrated Circuit
Asymmetrical design of Doherty (main and
peak device are different)
Band Pass Filter
Block Upconverter
Community Antenna Television
Code Division Multiple Access
Chinese Multimedia Mobile Broadcasting
Complementary Metal Oxide Semiconductor
Customer Qualification Samples
Digital Audio Broadcasting
Digital Enhanced Cordless
Telecommunications
Digital Satellite Equipment Control
Digital Signal Processor
Digital Video Broadcasting
Enhanced Data Rates for GSM Evolution
Electro Static Device
Field Effect Transistor
Frequency Modulation
Gallium Arsenide
Gallium Nitride
Generation
Global Positioning System
Global System for Mobile communications
Heterojunction Bipolar Transistor
High Definition Television
High Frequency (3-30 MHz)
Hybrid Fiber Coax
Heterostructure Field Effect Transistor
High Power Amplifier
Plastic thermally enHanced Very thin Quad
Flat pack No leads
Intermediate Frequency
Industrial, Scientific, Medical - reserved
frequency bands
Laterally Diffused Metal-Oxide-Semiconductor
Low Noise Amplifier
Low Noise Block
Local Oscillator
Low Pass Filter
Metal Semiconductor Field Effect Transistor
Monolithic Microwave Integrated Circuit
Main and peak devices realized separately in
halves of push-pull transistor
MPPM
Main and peak device realized in same pushpull transistor (2 times)

MoCA
Multimedia over Coax Alliance
MOSFET
MetalOxideSemiconductor Field Effect
Transistor
MPA
Medium Power Amplifier
MRI
Magnetic Resonance Imaging
NF
Noise Figure
NIM
Network Interface Module
NMR
Nuclear Magnetic Resonance
PA
Power Amplifier
PAR
Peak to Average Ratio
PEP
Peak Envelope Power
pHEMT
pseudomorphic High Electron Mobility
Transistor
PLL
Phase Locked Loop
QUBiC
Quality BiCMOS
RF
Radio Frequency
RFS
Release for Supply
RoHS
Restriction of Hazardous Substances
Rx
Receive
SARFT
State Administration for Radio, Film and
Television
SER
Serializer
SiGe:C
Sillicon Germanium Carbon
SMATV
Satellite Master Antenna Television
SMD
Surface Mounted Device
SPDT
Single Pole, Double Throw
SYM
Symmetrical design of Doherty (main and peak
device are the same type of transistor)
TD-SCDMA Time Division-Synchronous Code Division
Multiple Access
TCAS
Traffic Collision Avoidance Systems
TMA
Tower Mounted Amplifier
TTFF
Time to First Fix
Tx
Transmit
UHF
Ultra High Frequency (470-860 MHz)
UMTS
Universal Mobile Telecommunications System
VCO
Voltage Controlled Oscillator
VGA
Variable Gain Amplifier
VHF
Very High Frequency (30-300 MHz)
VoIP
Voice over Internet Protocol
VSAT
Very Small Aperture Terminal
WCDMA
Wideband Code Division Multiple Access
WiMAX
Worldwide Interoperability for Microwave
Access
WLAN
Wireless Local Area Network
8. Contacts and web links

How to contact your authorized distributor or local NXP representative.
Authorized distributors
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific_dist
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe_dist
North America:
http://www.nxp.com/profile/sales/northamerica_dist
Local NXP Offices

Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe
North America:
http://www.nxp.com/profile/sales/northamerica
NXP RF power & base stations:

http://www.nxp.com/rfpower
NXP RF FETs:
http://www.nxp.com/rffets
NXP RF CATV electrical & optical:
http://www.nxp.com/catv
NXP RF applications:
http://www.nxp.com/rf
NXP application notes:
http://www.nxp.com/all_appnotes
NXP cross-references:
http://www.nxp.com/products/xref
NXP packaging:
http://www.nxp.com/package
NXP end-of-life:
http://www.nxp.com/products/eol
Web links
NXP RF Manual web page:

http://www.nxp.com/rfmanual
NXP varicaps:
http://www.nxp.com/varicaps
NXP RF PIN diodes:
http://www.nxp.com/pindiodes
NXP RF schottky diodes:
http://www.nxp.com/rfschottkydiodes
NXP quality handbook:

http://www.standardics.nxp.com/quality/handbook
NXP literature:
http://www.nxp.com/products/discretes/documentation
NXP packaging:
http://www.nxp.com/package
NXP sales offices and distributors:
http://www.nxp.com/profile/sales
NXP high-speed converters
http://www.nxp.com/dataconverters
Contacts
and web links
NXP Semiconductors:
http://www.nxp.com
NXP RF MMICs:
http://www.nxp.com/mmics
NXP RF wideband transistors:
http://www.nxp.com/rftransistors
117
9. Product index
Portfolio
chapter
Type
Abbreviations
1PS10SB82
1PS66SB17
1PS66SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS76SB17
1PS79SB17
1PS88SB82
ADC0801S040
ADC0804S series
ADC0808S series
ADC1002S020
ADC1003S series
ADC1004S series
ADC1005S060
ADC1006S series
ADC1010S series
ADC1015S series
ADC1112D125
ADC1113D125
ADC1113S125
ADC1115S125
ADC1206S series
ADC1207S080
ADC1210S series
ADC1212D series
ADC1213D series
ADC1213S series
ADC1215S series
ADC1410S series
ADC1412D series
ADC1413D series
ADC1413S series
ADC1415S series
ADC1610S series
ADC1613D series
ADC1613S series
BA277
BA591
BA891
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
BAP50-02
BAP50-03
BAP50-04
BAP50-04W
BAP50-05
BAP50-05W
BAP50LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
BAP51LX
BAP55LX
BAP63-02
BAP63-03
BAP63-05W
BAP63LX
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
118
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.2.3
3.2.3
3.2.3
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
Type
BAP64-06
BAP64-06W
BAP64LX
BAP64Q
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP65LX
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP70AM
BAP70Q
BAT17
BAT18
BB131
BB135
BB145B
BB148
BB149
BB149A
BB152
BB153
BB156
BB178
BB178LX
BB179
BB179B
BB179BLX
BB179LX
BB181
BB181LX
BB182
BB182LX
BB184
BB187
BB187LX
BB189
BB198
BB199
BB201
BB202
BB202LX
BB207
BB208-02
BB208-03
BBY40
BF1100
BF1100R
BF1100WR
BF1101
BF1101R
BF1101WR
BF1102(R)
BF1105
BF1105R
BF1105WR
BF1107
BF1108
BF1108R
BF1108W
BF1108WR
BF1109
BF1109R
BF1109WR
BF1118
BF1118R
BF1118W
BF1118WR
Portfolio
chapter
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.4
3.2.3
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
Type
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
BF1203
BF1204
BF1205
BF1205C
BF1206
BF1206F
BF1207
BF1208
BF1208D
BF1210
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF1214
BF1215
BF1216
BF1217
BF1218
BF245A
BF245B
BF245C
BF510
BF511
BF512
BF513
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BF862
BF904A
BF904AR
BF904AWR
BF908
BF908R
BF908WR
BF909A
BF909AR
BF909AWR
BF991
BF992
BF994S
BF996S
BF998
BF998R
BF998WR
BFG10
BFG10/X
BFG10W/X
BFG135
BFG198
BFG21W
BFG25A/X
BFG25AW
BFG25AW/X
BFG31
BFG310/XR
Portfolio
chapter
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
Type
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG35
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
BFG505
BFG505/X
BFG505W
BFG505W/X
BFG505W/XR
BFG520
BFG520/X
BFG520/XR
BFG520W
BFG520W/X
BFG540
BFG540/X
BFG540/XR
BFG540W
BFG540W/X
BFG540W/XR
BFG541
BFG590
BFG590/X
BFG591
BFG67
BFG67/X
BFG92A/X
BFG93A
BFG93A/X
BFG94
BFG97
BFM505
BFM520
BFQ149
BFQ18A
BFQ19
BFQ540
BFQ591
BFQ67
BFQ67W
BFR106
BFR30
BFR31
BFR505
BFR505T
BFR520
BFR520T
BFR540
BFR92A
BFR92AW
BFR93A
BFR93AR
BFR93AW
BFR94A
BFR94AW
BFS17
BFS17A
BFS17W
BFS25A
BFS505
BFS520
BFS540
BFT25
BFT25A
BFT46
Portfolio
chapter
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.5.1
3.5.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.5.1
BFT92
BFT92W
BFT93
BFT93W
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGA2001
BGA2002
BGA2003
BGA2011
BGA2012
BGA2022
BGA2031/1
BGA2709
BGA2711
BGA2712
BGA2714
BGA2715
BGA2716
BGA2717
BGA2748
BGA2771
BGA2776
BGA2800
BGA2801
BGA2802
BGA2803
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGA2870
BGA6289
BGA6489
BGA6589
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
BGA7202
BGA7204
BGA7350
BGA7351
BGD502
BGD702
BGD702N
BGD704
BGD712
BGD712C
BGD714
BGD802
BGD804
BGD812
BGD814
BGD816L
BGD885
BGE787B
BGE788C
BGE885
BGM1011
BGM1012
BGM1013
Portfolio
chapter
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.1
3.6.1
3.6.1
3.4.1
3.4.1
3.4.1
Type
BGM1014
BGO807
BGO807C
BGO807CE
BGO827
BGR269
BGU7003
BGU7003W
BGU7004
BGU7005
BGU7007
BGU7008
BGU7031
BGU7032
BGU7033
BGU7041
BGU7042
BGU7051
BGU7052
BGU7053
BGX7100
BGX7220
BGX7221
BGX7300
BGX885N
BGY1085A
BGY585A
BGY587
BGY587B
BGY588C
BGY588N
BGY66B
BGY67
BGY67A
BGY68
BGY685A
BGY687
BGY785A
BGY787
BGY835C
BGY883
BGY885A
BGY887
BGY887B
BGY888
BLA6G1011-200R(G)
BLA6G1011LS-200RG
BLA6H0912-1000
BLA6H0912-500
BLA6H1011-600
BLD6G21L-50
BLD6G21LS-50
BLD6G22L(S)-50
BLF178P
BLF2425M6L(S)180P
BLF2425M6LS180P
BLF2425M7L(S)140
BLF2425M7L(S)200
BLF2425M7L(S)250P
BLF2425M7LS200
BLF2425M7LS250P
BLF25M612
BLF278XR
BLF571
BLF572P
BLF573(S)
BLF573P
BLF574
BLF578
BLF578XR
BLF642
Portfolio
chapter
3.4.1
3.6.4
3.6.4
3.6.4
3.6.4
3.6.5
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.2
3.4.2
3.4.2
3.4.2
3.6.1
3.6.2
3.6.1
3.6.1
3.6.1
3.6.1
3.6.1
3.6.5
3.6.5
3.6.5
3.6.5
3.6.1
3.6.1
3.6.1
3.6.1
3.6.1
3.6.1
3.6.1
3.6.1
3.6.1
3.6.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.1.3
3.7.1.3
3.7.1.4
3.7.2.1
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
Type
BLF645
BLF647P
BLF6G10-200RN
BLF6G10(LS)-160RN
BLF6G10(S)-45
BLF6G10L-40BRN
BLF6G10L(S)-260PRN
BLF6G10LS-200RN
BLF6G13LS-250P
BLF6G15L-250PBRN
BLF6G15L-40BRN
BLF6G15LS-500H
BLF6G20-110
BLF6G20-180PN
BLF6G20-180RN
BLF6G20-230PRN
BLF6G20-40
BLF6G20-45
BLF6G20-75
BLF6G20LS-110
BLF6G20LS-140
BLF6G20LS-180RN
BLF6G20LS-75
BLF6G20S-230PRN
BLF6G20S-45
BLF6G21-10G
BLF6G22(LS)-180PN
BLF6G22(LS)-180RN
BLF6G22(S)-45
BLF6G22L-40BN
BLF6G22L(S)-40P
BLF6G22LS-100
BLF6G22LS-40P
BLF6G22LS-75
BLF6G27LS-40P
BLF6G38-10(G)
BLF6G38(LS)-100
BLF6G38(LS)-25
BLF6G38(LS)-50
BLF7G10LS-250
BLF7G15LS-200
BLF7G15LS-300P
BLF7G20L-200
BLF7G20L-250P
BLF7G20L-90P
BLF7G20LS-140P
BLF7G20LS-200
BLF7G20LS-250P
BLF7G20LS-90P
BLF7G21L(S)-160P
BLF7G21LS-160P
BLF7G22L(S)-130
BLF7G22L(S)-160
BLF7G22L(S)-200
BLF7G22L(S)-250P
BLF7G22LS-100P
BLF7G22LS-160
BLF7G24L(S)-100
BLF7G24L(S)-140
BLF7G24LS-160P
BLF7G27L(S)-100
BLF7G27L(S)-140
BLF7G27L(S)-150P
BLF7G27L(S)-75P
BLF7G27L(S)-90P
BLF7G27LS-200P
BLF7G38LS-90P
BLF871(S)
BLF878
BLF879P
BLF881(S)
Portfolio
chapter
3.7.2.1
3.7.2.1
3.7.1.1
3.7.1.1
3.7.1.1
3.7.1.1
3.7.1.1
3.7.1.1
3.7.2.1
3.7.1.2
3.7.1.2
3.7.2.1
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.1
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.5
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.1
3.7.1.2
3.7.1.2
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.5
3.7.1.5
3.7.1.5
3.7.1.5
3.7.1.5
3.7.1.5
3.7.1.5
3.7.1.5
3.7.1.5
3.7.1.6
3.7.2.1
3.7.2.2
3.7.2.2
3.7.2.1
Type
Portfolio
chapter
BLF884P
BLF888
BLF888A
BLF888A(S)
BLF8G10LS-160
BLF8G10LS-300P
BLL6G1214L-250
BLL6H0514-25
BLL6H0514L(S)-130
BLL6H1214-500
BLL6H1214L(S)-250
BLM2425M720
BLM6G10-30(G)
BLM6G22-30
BLM7G22S-60PG
BLP05H6100P
BLP05H6500P
BLP05H650P
BLP09H620
BLP10H605
BLP10H610
BLP10H6120
BLP10H6300P
BLP10H6xx
BLP15M6100P
BLP15M630
BLP15M660P
BLP15M705
BLP15M710
BLP15M7150P
BLP15M7xx
BLP2425M8140
BLP2425M8250P
BLP25M710
BLP25M74
BLP7G10S-140P(G)
BLP7G10S-140PG
BLP7G22-10
BLS6G2731-6G
BLS6G2731(S)-120
BLS6G2731P-200
BLS6G2731S-130
BLS6G2735L(S)-30
BLS6G2735LS-30
BLS6G2933P-200
BLS6G2933S-130
BLS6G3135(S)-120
BLS6G3135(S)-20
BLS7G2729L(S)-350P
BLS7G2729LS-350P
BLS7G2933S-150
BLS7G3135L(S)-350P
BLS7G3135LS-350P
BLT50
BLT70
BLT80
BLT81
BSR56
BSR57
BSR58
BSS83
CGD1040HI
CGD1042H
CGD1042HI
CGD1044H
CGD1044HI
CGD1046Hi
CGD942C
CGD944C
CGD982HCi
CGD985HCi
3.7.2.2
3.7.2.2
3.7.2.2
3.7.2.1
3.7.1.1
3.7.1.1
3.7.3.2
3.7.3.1
3.7.3.2
3.7.3.2
3.7.3.2
3.7.2.3
3.7.1.1
3.7.1.4
3.7.1.4
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.1
3.7.2.3
3.7.2.3
3.7.2.3
3.7.2.3
3.7.1.1
3.7.1.1
3.7.1.4
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.3.1
3.3.1
3.3.1
3.3.1
3.5.1
3.5.1
3.5.1
3.5.2
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
119
Product index
Type
Portfolio
chapter
Type
CGD987HCi
CGY1032
CGY1041
CGY1043
CGY1047
CGY1049
CGY888C
DAC1001D125
DAC1003D160
DAC1005D series
DAC1008D series
DAC1201D125
DAC1203D160
DAC1205D series
DAC1208D series
DAC1401D125
DAC1403D160
DAC1405D series
DAC1408D series
J108
J109
J110
J111
J112
J113
J174
J175
120
3.6.3
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.1
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
Type
J176
J177
PBR941
PBR951
PMBD353
PMBD354
PMBF4391
PMBF4392
PMBF4393
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ620
PRF947
PRF949
PRF957
TFF1003HN
Portfolio
chapter
3.5.1
3.5.1
3.3.1
3.3.1
3.2.4
3.2.4
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.3.1
3.3.1
3.3.1
3.4.4
Type
TFF1007HN
TFF1008HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF1018HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11094HN
TFF11096HN
TFF11101HN
TFF11105HN
TFF11110HN
TFF11115HN
TFF11121HN
TFF11126HN
TFF11132HN
TFF11139HN
TFF11145HN
TFF11152HN
Portfolio
chapter
3.4.4
3.4.4
3.4.3
3.4.3
3.4.3
3.4.3
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
Notes
121
Notes
122
www.nxp.com
2011 NXP B.V.

All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
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www.climatepartner.com
Date of release: May 2011

Document order number: 9397 750 17087
Printed in the Netherlands

NXP RF Manual 15th Edition

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RF Manual 15th edition

Application and design manual

High Performance RF for the most demanding applications

NXPs RF Manual makes

High Performance RF for the most demanding applications

NXP Semiconductors RF Manual 15th edition

RF Manual web page

NXP Semiconductors RF Manual 15th edition

1.1 Wireless communication infrastructure__________________________________________________________________________________________________________________________________________________________________ 9

2 Focus applications, products & technologies

2.1 Wireless communication infrastructure_ _______________________________________________________________________________________________________________________________________________________________ 40

NXP Semiconductors RF Manual 15th edition

3.1 New products_______________________________________________________________________________________________________________________________________________________________________________________________________70

4.1 S-parameters ______________________________________________________________________________________________________________________________________________________________________________________________________ 95

5 Cross-references & replacements_________________________________________________________99

Cross-references: manufacturer types versus NXP types________________________________________________________________________________________________________________________ 99

Cross-references: NXP discontinued types versus NXP replacement types__________________________________________________________________________________________109

6 Packing and packaging information______________________________________________________ 111

Packing quantities per package with relevant ordering code_________________________________________________________________________________________________________________ 111

Marking codes list_ __________________________________________________________________________________________________________________________________________________________________________________ 114

NXP Semiconductors RF Manual 15th edition

1.1.1 Base stations (all cellular standards and frequencies)

NXP Semiconductors RF Manual 15th edition

`` A symmetrical Doherty efficiency 37.6% with 15.2 dB gain at 47.5 dB

LNA (low noise

PL (1dB) @ 940 MHz

`` Dual-channel, 14-bit resolution

NXP Semiconductors RF Manual 15th edition

NXP Semiconductors RF Manual 15th edition

NXP BTS Tx component demonstrator board

`` Dual independent digitally controlled 24 dB gain range VGAs,

PL (1 dB) @ 940 MHz

-131 dBc/Hz @ 1 MHz

NXP Semiconductors RF Manual 15th edition

`` 8.5 dB conversion gain over all bands

1.2 Broadband communication infrastructure

NXP Semiconductors RF Manual 15th edition

1.2.2 CATV electrical (line extenders)

All available in SOT115 package.

NXP Semiconductors RF Manual 15th edition

1.3 TV and satellite

When power to the recording device is on, the BF11x8 is open, so

NXP Semiconductors RF Manual 15th edition

NXP Semiconductors RF Manual 15th edition

and remodulators. The active splitter requires an LNA with excellent

1.3.2 Basic TV tuner

The device consists of two dual gate mosfet amplifiers in a small

NXP Semiconductors RF Manual 15th edition

2nd stage LNA

^ = also available in ultra small leadless package SOD882D.

NXP Semiconductors RF Manual 15th edition

`` No output inductor necessary when used at the output stage

1.3.4 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV

coax out to STB

^ = also available in ultra small leadless package SOD882D.

`` High isolation, low distortion, low insertion loss

NXP Semiconductors RF Manual 15th edition

NXP Semiconductors RF Manual 15th edition

^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4

`` Phase noise compliant with IESS-308 (Intelsat)

NXP Semiconductors RF Manual 15th edition

1.4 Portable devices

^ = also available in ultra-small leadless package SOD882D.

`` A symmetrical Doherty efficiency 37.6% with 15.2 dB gain at 47.5 dB

`` Dual independent digitally controlled 24 dB gain range VGAs,

`` High transition frequency and optimized input capacitance for