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A.
holes
B.
electrons
C.
ions
D.
Answer: Option D
Explanation:
2.
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
A.
Answer & Explanation
Answer: Option B
Explanation:
True
B.
False
Work function is the minimum energy required by the fastest electron at 0 K to escape from the metal surface.
3.
The most commonly used semiconductor material is
A.
silicon
B.
germanium
C.
D.
Answer: Option A
Explanation:
4.
In which of these is reverse recovery time nearly zero?
A.
Zener diode
B.
Tunnel diode
C.
Schottky diode
D.
PIN diode
Answer: Option C
Explanation:
In schottky diode there is no charge storage and hence almost zero reverse recovery time.
5.
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
A.
100
B.
99
C.
1.01
D.
0.99
Answer: Option A
Explanation:
6.
In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region
to p-region. Then
A.
B.
C.
D.
Answer: Option B
Explanation:
7.
In an n channel JFET, the gate is
A.
n type
B.
p type
C.
either n or p
D.
Answer: Option B
Explanation:
8.
The amount of photoelectric emission current depends on
A.
B.
C.
D.
Answer: Option B
Explanation:
Only the intensity of incident radiation governs the amount of photoelectric emission.
9.
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
A.
B.
C.
D.
Answer: Option A
Explanation:
10.
In the circuit of figure the function of resistor R and diode D are
A.
B.
C.
to limit the current and protect LED against reverse breakdown voltage.
D.
Answer: Option C
Explanation:
Resistance limits current and diode is reverse connected and therefore protects LED against reverse breakdown.
11.
At very high temperatures the extrinsic semi conductors become intrinsic because
A.
B.
C.
D.
Answer: Option B
Explanation:
12.
When a voltage is applied to a semiconductor crystal then the free electrons will flow.
A.
B.
C.
D.
towards positive terminal for 1 s and towards negative terminal for next 1 s
Answer: Option A
Explanation:
Since electrons are negatively charged they will flow towards positive terminal.
13.
Ferrite have
A.
B.
C.
low resistivity
D.
Answer: Option C
Explanation:
Ferrite is a low density material of composition with Fe2O3 x O, where x is a bivalent metal, such as Cobart, Ni, Mn. These magnetic materials having very low loss of
current and used in high frequency circuit.
14.
In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be
A.
B.
C.
D.
Answer: Option B
Explanation:
15.
In an n-p-n transistor, the majority carriers in the base are
A.
electrons
B.
holes
C.
D.
Answer: Option A
Explanation:
Emitter is n type and emits electrons which diffuse through the base.
16.
An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is
A.
0 to 200
B.
200 - 400
C.
D.
Answer: Option D
Explanation:
R=
= 400.
R must be at least 400 so that current in LED does not exceed 10 mA.
17.
The number of doped regions in PIN diode is
A.
B.
C.
D.
1 or 2
Answer: Option B
Explanation:
18.
A transistor has two p-n junctions. The batteries should be connected such that
A.
B.
C.
D.
Answer: Option C
Explanation:
Emitter-base junction is forward biased and base collector junction is reverse biased.
19.
A silicon (PN) junction at a temperature of 20C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40C for the same bias is
approximately.
A.
30 pA
B.
40 pA
C.
50 pA
D.
60 pA
Answer: Option B
Explanation:
By increasing of temperature by 10C, Io become double so by increasing temperature 20C, Io become 4 time than initial value... and it is 40 PA.
20.
In a bipolar transistor the barrier potential
A.
B.
a total of 0.7 V
C.
D.
0.35 V
Answer: Option C
Explanation:
Since there are two p-n junctions, there are two depletion layers and 0.7 V across each layer.
21.
Recombination produces new electron-hole pairs
A.
True
B.
False
Answer: Option B
Explanation:
22.
An amplifier without feedback has a voltage gain of 50, input resistance of 1 k and output resistance of 2.5 k. The input resistance of the current shunt
-ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is
A.
1/11 k
B.
1/5 k
C.
5 kW
D.
11 kW
Answer: Option A
Explanation:
23.
As compared to an ordinary semiconductor diode, a Schottky diode
A.
B.
C.
D.
Answer: Option A
Explanation:
Cut in voltage in Schottky diode is about 0.3 V as compared to 0.7 V in ordinary semiconductor diode.
24.
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
A.
B.
C.
D.
Answer: Option A
Explanation:
25.
As compared to an ordinary semiconductor diode, a Schottky diode
A.
B.
C.
D.
Answer: Option C
Explanation:
26.
Crossover distortion behaviour is characteristic of
A.
B.
C.
D.
Answer: Option B
Explanation:
In class B amplifier, two transistor are operated in such a way that one is amplify the half cycle and second is amplify -ve half cycle.
27.
If ac for transistor is 0.98 then ac is equal to
A.
51
B.
49
C.
47
D.
45
Answer: Option B
Explanation:
28.
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
A.
B.
C.
D.
Answer: Option B
Explanation:
A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent.
29.
In an n-p-n transistor biased for operation in forward active region
A.
B.
C.
base is positive with respect to emitter and collector is positive with respect to base
D.
Answer: Option C
Explanation:
In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.
30.
An increase in temperature increases the width of depletion layer.
A.
True
Answer: Option B
Explanation:
B.
False
31.
A zener diode is used in
A.
B.
amplifier circuits
C.
D.
Answer: Option A
Explanation:
32.
A particular green LED emits light of wavelength 5490, , the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.
A.
2.26 eV
B.
1.98 eV
C.
1.17 eV
D.
0.74 eV
Answer: Option A
Explanation:
joule
33.
In a zener diode
A.
B.
C.
D.
Answer: Option B
Explanation:
When reverse voltage equals breakdown value it starts conducting and voltage does not increase further.
34.
In a bipolar transistor which current is largest
A.
collector current
B.
base current
C.
emitter current
D.
Answer: Option C
Explanation:
Emitter current is larger, collector current is slightly less than emitter current and base current is very small.
35.
The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification
A.
AB
B.
BC
C.
CD
D.
BD
Answer: Option B
Explanation:
36.
Secondary emission is always decremental.
A.
True
B.
False
Answer: Option B
Explanation:
37.
In a degenerate n type semiconductor material, the Fermi level,
A.
is in valence band
B.
is in conduction band
C.
D.
Answer: Option B
Explanation:
38.
The types of carriers in a semiconductor are
A.
B.
C.
D.
Answer: Option B
Explanation:
39.
A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is
A.
7 mA
B.
6.3 mA
C.
0.7 mA
D.
Answer: Option B
Explanation:
40.
Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20C and 32 nA at 50C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10C rise in temperature.
A.
B.
C.
D.
Answer: Option A
Explanation:
41.
Calculate the stability factor and change in IC from 25C to 100C for, = 50, RB/ RE = 250, IC0 = 19.9 nA for emitter bias configuration.
A.
42.53, 0.85 A
B.
40.91, 0.58 A
C.
40.91, 0.58 A
D.
41.10, 0.39 A
Answer: Option A
Explanation:
SICO = (1 + ).
51.
= 42.53
IC = (SICO).ICO
= 42.53 x 19.9 nA
= 0.85 A.
42.
A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of
the waveform is
A.
31 V
B.
32 V
C.
insufficient data
D.
none of these
Answer: Option A
Explanation:
43.
Work function of oxide coated cathode is much lower than that of tungsten cathode.
A.
Answer & Explanation
True
B.
False
Answer: Option A
Explanation:
44.
The word enhancement mode is associated with
A.
tunnel diode
B.
MOSFET
C.
JFET
D.
photo diode
Answer: Option B
Explanation:
45.
In which region of a CE bipolar transistor is collector current almost constant?
A.
Saturation region
B.
Active region
C.
Breakdown region
D.
Answer: Option B
Explanation:
46.
A p-n junction diode has
A.
B.
C.
zero forward current till the forward voltage reaches cut in value
D.
Answer: Option D
Explanation:
47.
Which of the following is true as regards photo emission?
A.
B.
C.
D.
Answer: Option C
Explanation:
48.
The power dissipation in a transistor is the product of
A.
B.
C.
D.
Answer: Option C
Explanation:
49.
The normal operation of JFET is
A.
B.
C.
D.
Answer: Option B
Explanation:
50.
The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm 2/sec. The diffusion length is
A.
0.1 cm
B.
0.01 cm
C.
0.0141 cm
D.
1 cm
Answer: Option A
Explanation:
Diffusion length =