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TIC106SERIES

SILICONCONTROLLED
RECTIFIERS
Copyright 1997, Power Innovations Limited,
UK

APRIL 1971 - REVISED MARCH 1997

5 A Continuous On-State Current

TO-220 PACKAGE
(TOP VIEW)

30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 200 A

3
Pin 2 is in electrical contact with the mounting
base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING

SYMBOL

Repetitive peak off-state voltage (see Note 1)

VDRM

Repetitive peak reverse voltage

TIC106D
TIC106M
TIC106S
TIC106N

VRRM

Average on-state current (180 conduction angle) at (or below) 80C case
temperature (see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width 300 s)
Peak gate power dissipation (pulse width 300 s)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds

UNIT

400

TIC106D
TIC106M
TIC106S
TIC106N

Continuous on-state current at (or below) 80C case temperature (see Note 2)

VALUE
600
700
800
400

IT(RMS)

600
700
800
5

IT(AV)

3.2

ITM
IGM
PGM
PG(AV)

30
0.2
1.3
0.3
-40 to +110
-40 to +125
230

A
A
W
W
C
C
C

TC
Tstg
TL

NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.


2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C
derate linearly to zero at 110C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse
voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.

PRO DUCT

INF OR MAT IO N

Information is current as of publication date. Products conform to specifications in accordance


with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

electrical characteristics at 25C case temperature (unless otherwise noted)


PARAMETER
IDRM
IRRM
IGT

VGT

IH

TEST CONDITIONS

Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current

Gate trigger voltage

Holding current

TYP

MAX

UNIT

VD = rated VDRM

RGK = 1 k

TC = 110C

400

VR = rated VRRM

IG = 0

TC = 110C

mA

VAA = 6 V
VAA = 6 V
tp(g) 20 s

RL = 100
RL = 100
RGK = 1 k

tp(g) 20 s
TC = - 40C

200

VAA = 6 V
tp(g) 20 s

RL = 100
RGK = 1 k

VAA = 6 V
tp(g) 20 s

RL = 100
RGK = 1 k

TC = 110C

VAA = 6 V
Initiating IT = 10 mA

RGK = 1 k

TC = - 40C

VAA = 6 V
Initiating IT = 10 mA

RGK = 1 k

5
1.7

VTM

Peak onstate voltage

ITM = 5 A

(See Note 6)

dv/dt

Critical rate of rise of


off-state voltage

VD = rated VD

RGK = 1 k

NOTE

MIN

60

1.2
0.4

0.6

0.2
8
mA

TC = 110C

10

V
V/s

6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER
RJC
RJA

MIN

TYP

Junction to case thermal resistance


Junction to free air thermal resistance

MAX

UNIT

3.5
62.5

C/W
C/W

MAX

UNIT

resistive-load-switching characteristics at 25C case temperature


PARAMETER
tgt
tq

TEST CONDITIONS

Gate-controlled
turn-on time
Circuit-commutated
turn-off time

PRO DUCT

MIN

IT = 5 A

IG = 10 mA

See Figure 1

IT = 5 A
IRM = 8 A

IG = 10 mA

See Figure 2

INFORMATIO N

TYP
1.75

7.7

TIC106SERIES
SILICONCONTROLLED
RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION


30 V
IT
V DUT

VG
10%

tgt
RG
G
VG

VA

IG

90%
PMC1AA

Figure 1. Gate-controlled turn-on time


30 V
6

0.1 F
to 0.5 F

IA

R2

R1

VA
DUT

RG
G1
VG1

TH1

VK
(IRM Monitor)

IG

RG
IG

0.1

VG2

NOTES: A. Resistor R1 is adjusted for the specified value


of IRM.
B. Resistor R2 value is 30/IH, where IH is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
tP = 50 s to 300 s
G2
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, VG, of 20 V and duration of
10 s to 20 s.

G2 tP Synchronisation

V G1
VG2
IT
IA

tP

0
IRM

VA

VT

tq

PMC1AB

Figure 2. Circuit-commutated turn-off time

PRO DUCT

INF OR MAT IO N
3

MAX CONTINUOUS ANODE POWER DISSIPATED


vs
CONTINUOUS ON-STATE CURRENT

AVERAGE ANODE ON-STATE CURRENT


DERATING CURVE
TI20AA

6
Continuous DC
5

= 180

2
0

180

Conduction
Angle

PA - Max Continuous Anode Power Dissipated - W

IT(AV) - Maximum Average Anode Forward Current - A

TYPICAL CHARACTERISTICS

TJ = 110C

10

1
0
30

40

50

60

70

80

90

100

TI20AB

100

110

10

100

IT - Continuous On-State Current - A

ITM - Peak Half-Sine-Wave Current - A

Figure 3.

SURGE ON-STATE CURRENT


vs
CYCLES OF CURRENT DURATION
TI20AC

100

TC 80 C
No Prior Device Conduction Gate Control Guaranteed

10

10

100

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 5.

PRO DUCT

INFORMATIO N

RJC(t) - Transient Thermal Resistance - C/W

TC - Case Temperature - C

Figure 4.

TRANSIENT THERMAL RESISTANCE


vs
CYCLES OF CURRENT DURATION
TI20AD

10

01 1

10
Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 6.

100

TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs

GATE TRIGGER CURRENT


vs

CASE TEMPERATURE
TC20AA

VAA = 6 V
RL = 100
tp(g) 20 s

100

VGT - Gate Trigger Voltage - V

IGT - Gate Trigger Current - A

CASE TEMPERATURE

TC20AB

VAA = 6 V RL = 100 RGK = 1 k


tp(g) 20 s
08

06

04

02

-25

25

50

75

100

0
-50

125

-25

25

50

75

TC - Case Temperature - C

TC - Case Temperature - C

Figure 7.

Figure 8.

GATE FORWARD VOLTAGE


vs
GATE FORWARD CURRENT

HOLDING CURRENT
vs
CASE TEMPERATURE
TC20AC

IA = 0
TC = 25 C
tp = 300 s
Duty Cycle 2 %

I - Holding Current - mA

10

100

125

TC20AD

10
VAA = 6 V
RGK = 1
k
Initiating IT = 10 mA

VGF - Gate Forward Voltage - V

10
-50

01
01

10

100

1000

1
-50

-25

25

50

75

IGF - Gate Forward Current - mA

TC - Case Temperature - C

Figure 9.

Figure 10.

100

125

TYPICAL CHARACTERISTICS
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT

GATE-CONTROLLED TURN-ON TIME


vs
GATE CURRENT
TC20AF

TC20AE

10.0

2.0

tgt - Gate-Controlled Turn-On Time - s

VTM - Peak On-State Voltage - V

2.5

TC = 25 C
tp = 300 s
Duty Cycle 2 %

1.5

1.0

0.5

0.0
01

VAA = 30 V
RL = 6
TC = 25 C

8.0

See Test Circuit and Waveforms


6.0

4.0

2.0

0.0
01

10

ITM - Peak On-State Current - A

IG - Gate Current - mA

Figure 11.

Figure 12.

CIRCUIT-COMMUTATED TURN-OFF TIME


vs
CASE TEMPERATURE
tq - Circuit-Commutated Turn-Off Time - s

16

TC20AG

VAA = 30 V RL = 6 IRM 8 A
See14Test Circuit and Waveforms
12
10
8
6
4
2
0
20

40

60

80

TC - Case Temperature - C

Figure 13.

PRO DUCT

INFORMATIO N

100

120

10

TO-220
3-pin plastic flange-mount package

MECHANICAL DATA

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning
or processing when used in soldered assembly.

TO220

4,70
4,20

10,4
10,0

3,96
3,71

1,32
1,23

2,95
2,54

see Note B
6,6
6,0tab.
NOTES: A. The centre pin is in electrical contact with the mounting
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package
version. Version
15,90
1, 18.0 mm. Version 2, 17.6 mm.
14,55
see Note C

6,1
3,5

1,70
1,07

0,97
0,61
3

14,1
12,7

12

MDXXBE

2,34
5,28
4,88

0,41
2,90
2,40

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that
the information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO
BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 1997, Power Innovations Limited

PRO DUCT

INFORMATIO N