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Ming Wu
Acknowledgment
Providing viewgraphs
Ming Wu
OUTLINE
Introduction
Optical design considerations
Space division switches
2D MEMS optical switches
3D MEMS optical switches
Ming Wu
Why ?
The effect of moving optical elements is stronger than electrooptic, thermal-optic effects
Very efficient beam steering devices
What
Switches
Tunable devices (delay, dispersion, wavelength, bandwidth,
dynamic gain equalization, etc)
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Optical MEMS
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Scanning Mirror
(Petersen, IBM)
Micromotoers
(Berkeley)
1980
Digital Micromirror
Device (DMD, TI)
TI
TIs DMD
TI
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1990
3D MEMS
Switches
2000
2D MEMS Switches
(Tokyo U)
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10
Angle
Pull-in voltage
(or Stiffness Voltage)
2 z03
VS =
WL3C
Analog
Regime
Voltage
Pull-in
Voltage
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Bulk Micromachining
Anisotropic wet chemical etching (restricted to fixed crystalline orientations)
<100>
<110>
<111>
<111>
Vertical
Sidewall
SurfaceSurface-Micromachining:
2 Standard
Standard Foundry Process
MUMPs
MUMPs
SUMMiT
SUMMiT
1 um
12.75 um
0.5 um
Poly 4
2 um
CMP2
Poly 3
6.25 um
Poly 2
CMP1
Poly 2
Poly 1
Poly 1
Poly 0
Poly 0
Si Substrate
Si Substrate
MEMSCAP
Fairchild (SUMMiT-4)
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Optical
Element
Size
1 cm
1 mm
Scanning display
Imaging
Applications
Main
Fabrication
Technologies
Main
Actuation
Mechanisms
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100 m
10 m
1 m
Mirror-based
VOA
3D-MEMS
OXC
Projection
OADM
display
WSS
2D Gain equalizer 2x2 Switches
MEMS Dispersion
VOA
Switch compensator
Bulk-Micromachining
Diffractive
MEMS
Surface-Micromachining
(Poly-Si, Al)
Electromagnetic
Actuation
Microresonators
Photonic
Crystals
NanoFabrication
Electrostatic Actuation
16
Optical Designs
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-1
IndexMatching
Fluid
-2
-3
Air
Air
-4
-5
TEC
SMF
0
200
400
600
800
1000
Distance (um)
18
Bar
State
19
2 2 w0
2w 0
w02
b=
z 2
w ( z ) = w0 1 +
b
2
(Confocal Parameter)
a ~ 1.5 to 2
20
10
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2w0
ADD Channels
2D MEMS
Switch
Chip
DROP
Channels
2b
N : Port Count
P : Fiber Pitch
Input
Channels
L = NP 2b =
Collimator
Arrays
: Chip Length
2R
: Fill Factor of Micromirror
P
R = aw0 : Mirror Radius,
=
Output
Channels
a ~ 1.5 to 2
L = 2b
N
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2w02
w0
a
2a 2 2
N
L =
2
22
11
80
Fill Factor =
70%
60
50%
40
30%
20
0
0
50
100
150
Mirror Tilt =
0.2
3
0.1
0.05
200
50
w0
a
2a 2 2
N
L =
2
Port Count : N
Chip Size :
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100
150
200
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SurfaceSurface-Micromachined
2D MEMS Optical Switches (16x16)
16x16 Switch
L. Fan, et al., OFC 2002
Number
60
50
40
30
20
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90.20
90.16
90.12
90.08
90.04
90.00
89.96
89.92
89.88
89.84
89.80
10
12
Input
Collimators
Output
Collimators
2D Array of 2-Axis
Micromirrors
L( )
9a 2
Port Count : N =
2w0
2w0
2w02
a ~ 1.5 to 2
w0 : Beam Waist
L
3
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26
13
Mirror surface
Mirror array
substrate
Comb teeth
Gold bump
Electrode
substrate
Fujitsu, 2002
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14
Mitsuhiro Yano, Fumio Yamagishi, and Toshitaka Tsuda, IEEE J. SELECTED TOPICS QUANTUM
ELECTRONICS, VOL. 11, p. 383, MARCH/APRIL 2005
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15
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16
1,
3, 4,
2,
n,
14 WSS
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1, 2, , n
1, 2, , n
1, 2, , n
1, 2, , n
44 WSXC
1,
3, 4,
2,
n,
33
Ring Network
ROADM (Ring)
Add-Drop with programmable s
1xN Wavelength-Selective Switch (Mesh)
Multi-degree ROADM
North
WSS
ADD
DROP
DROP
ADD
OADM
DROP
Lack of
Connectivity
ADD
WSS
Mesh Network
South
WSXC
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17
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M
Li EM
gh S
tM S
Ar od pat
ra ul ial
y ato
r
g
in
at
r
G
f
f
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MEMS Spatial
Light Modulator
Array
Dynamic
WDM
Functions
Piston Mirrors
Femtosecond pulse
shaper
ON-OFF
reflectors
Wavelength
blocker
Variable
reflectivity
mirror
1x2 Digital
micromirrors
Optical add-drop
multiplexer (OADM)
1xN analog
micromirrors
WavelengthSelective Switch
(WSS)
Deformable
mirrors
Tunable dispersion
compensator
36
18
tors
lima
l
o
C
g
in
at
r
G
Analog
Micromirror
Array
f
f
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1x4 WSS
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19
WSS provides:
Port switching
Wide passbands
10 dB DSE
Blocking
Low insert loss
Low PDL, DGD
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Mirror
y
x
Hidden springs
Fixed fingers
8
6
Anchor
Scan Angles
0.5m 1m
Voltage
2m
3m
4
2
DMD-Like
0
0
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5
10
15
20
Applied Voltage (V)
25
+/- 6 (mechanical)
6V
Fill Factor
98%
Res. Freq.
3.4 kHz
Stability (3hr)
0.00085
System (3hr)
0.0035dB
20
Scaling of WSS
wColl
w MEMS
Analog
Micromirror
Array
Collimators
w MEMS =
N spatial
wColl
22 f # Grating
N spatial N =
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System size ~ 2 f
BW f
22 f # Grating
41
D. Marom
(Lucent)
42
21
1xN2 WSS:
2D collimator array
1D array of 2-axis
micromirror array
Grating
f
Resolution lens
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Gimbal-less
High Fill factor (> 98%)
Low voltage
Powerful vertical combdrive actuators
J.C. Tsai, L. Fan, D. Hah, and M.C. Wu, IEEE LEOS
International Conference on Optical MEMS 2004
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Original mirror
position
44
22
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46
23
Main Add
input port
port
(a) Configuration of 16ch-100GHz OADM
47
Input
Output 3
Output 4
1x9 WSS
Thermal optic switch
450 mW / switch
Total power ~ 14W
Loss ~ 5.4 dB
Isolation > 46 dB
Output 5
48
24
49
MEMS
micromirror
array
Port 1
Port 2
Cylindrical
collimators
Switch to Port 1
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> 0
Fourier
lens
< 0
Switch to Port 2
50
25
Phase []
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
Voltage
Input Pulse
Thru shaper
Dispersion
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26
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Grating
Microlens
Bulk
Lens
MEMS
Chip
Silica PLC
f
Resolution Lens
Large space
Complicated alignment
D. Marom, et al. (Lucent), OFC 2002.
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27
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TIR
TIR
Blazed Micro-grating
Electrostatic Micromirror
TIR
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28
In1
In2
In3
In4
In1
In2
In3
In4
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Free-Space WSXC
1
3 4
2
6 8
WSS
4x4 WSXC
WSS1
WSS5
WSS2
WSS6
WSS3
WSS7
WSS4
WSS8
WSS1
WSS2
WSS3
WSS4
Out1
Out2
Out3
Out4
Out1
Out2
Out3
Out4
WSS1
Waveguide Bending
Waveguide Crossing
Out1
Out2
In1
In2
In3
In4
Out3
Out4
WSS2
46mm
WSS3
WSS4
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32mm
29
Simulation
Waveguide Bend (2D FDTD)
R = 100 m
Splitting Loss = 6.1 dB
1 m Offset
Nonuniformity = 0.004 dB
Loss = 1 dB
1 m Offset
890 um
40 um
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Crosstalk
-66 dB
59
Fabricated Device
1x4 WSS
Micromirror
100m
Micro-grating
Collimator
50m
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4x4 WSXC
5m
60
30
Transmissivity (dB)
-5
-45
-10
-50
-15
-55
-20
-60
-25
-65
-30
-70
1460
1480
1500
1520
1540
1560
-35
-35
1580
Wavelength (nm)
61
WSS1
-35
Transmission (dB)
Out1
Out2
In1
In2
In3
In4
Out3
Out4
WSS3
WSS4
In 1
In 2
In 3
In 4
-40
-45
-50
-55
-60
-65
-70
Voltage (v)
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Nitride with
Al coating
Applications
Projection display
Variable optical attenuators (VOA)
Gain equalizers
Wavelength blockers
Companies
Silicon light machine (Cypress),
Lightconnect, Polychromix, Kodak
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Polychromix
64
32
Telecommunications Applications
65
Input fiber
Tunable
Tunable
Laser
Laser
Power
Power
Detector
Detector
MEMS Beam
Focusing
Mirror Splitter
Lens
Array
Output
Fiber Array
http://wdm.stanford.edu/snrc/kyoungsik12_10_01.ppt
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33
Nanophotonic MEMS
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Optical waves
68
34
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Optical Microresonators
0
Equivalent Circuit
m:1
1:m
70
35
42 m
Thermally Tuned
with Vernier Architecture
71
Output
1e+0
Input
Over-coupled
1e-1
Critically Coupled
1e-2
Under-coupled
1e-3
1e-4
Decoupled
0.0
0.1
0.2
0.3
0.4
0.5
Critically Coupled
Over-coupled
Transmission
De-coupled
Frequency
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Frequency
Frequency
Frequency
72
36
Higher density
Very sensitive to
surface roughness
w
Single Mode
rms 1 nm
Waveguide Loss (cm-1)
w t 0.18
Surface Roughness
m2
Thickness, t (um)
TM Like
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TE Like
Si
OX
Multimode
Single
Mode
Waveguide Width, w (um)
73
TM-like Mode
Surface
Roughness
0.25um
5 nm
0.5um
3 nm
1 nm
After Annealing
Silicon Waveguide
Silicon Waveguide
SiO2
SiO2
Microdisk
Sidewall
Microdisk
Sidewall
Substrate
Substrate
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Surface Roughness
< 0.25 nm
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37
Microdisk
Successfully demonstrated
Switchable notch filter (O-MEMS 03)
Tunable dispersion, 0 ~ 400 ps/nm (CLEO 04)
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75
Microdisk
Left Electrode
Waveguide
Right Electrode
Radius: 20 m
Thickness : 0.25 m
Suspended deformable
waveguides
Microdisk Resonator
Width: 800 nm
Thickness: 250 nm
Length: 100 m
Waveguide
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38
Under- to Over-Coupling
Critical Coupling (=)
Largely-bent
Slightly-bent
Microdisk
Microdisk
Microdisk
Transmission (dB)
-5
-5
-5
0V
-10
17V
-10
-20
Resonant
-15 Wavelength
-20 = 1549.37nm
-25
-25
-15
-30
1548.5
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1549
1549.5
-15
-20
-25
-30
1550 1548.5
Wavelength (nm)
23.5V
-10
1549
1549.5
1550
-30
1548.5
1549
1549.5
1550
Wavelength (nm)
Wavelength (nm)
77
Through
Drop
Add
Cross
CrossConfiguration
Configuration
Input
Add
Through
Transmission
At Resonance
Drop
Drop
Through
Waveguide-Disk Spacing
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Applied Voltage: 0V
Through Port
Through Port
1550
1555
1560
Drop Port
0
-10
Transmission (dB)
Transmission (dB)
-10
-20
Through
-10
-20
1550
1555
1560
Drop Port
0
-10
Input
-20
1550
1555
1560
Wavelength (nm)
-20
1550
1555
Drop
1560
Wavelength (nm)
79
Disabled resonance
Enable resonance
Gregory N. Nielson, et al., (MIT) MEMS based wavelength selective optical switching for
integrated photonic circuits, CLEO 2004
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40
SUMMARY
Tremendous progresses have been made in
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