Ordering number:ENN5531B

N-Channel Silicon MOSFET

2SK2632LS
Ultrahigh-Speed Switching Applications
Features

Package Dimensions

Low ON-resistance.
Low Qg.

unit:mm
2078B
[2SK2632LS]
4.5

2.8

0.6

16.1

16.0

3.5

3.2

7.2

10.0

1.2
14.0

3.6

0.9
1.2
0.7

0.75
2

1 : Gate
2 : Drain
3 : Source
SANYO : TO220FI-LS

2.4

2.55

Specifications

2.55

Absolute Maximum Ratings at Ta = 25C

Parameter

Symbol

Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)

Conditions

Ratings

Unit

VDSS
VGSS

800

30

ID

2.5

IDP

7.5

2.0

25

PW10s, duty cycle1%

Allowable Power Dissipation

PD

Channel Temperature

Tch

150

W
C

Storage Temperature

Tstg

55 to +150

Tc=25C

Electrical Characteristics at Ta = 25C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage

V(BR)DSS
IDSS
IGSS
VGS(off)

Conditions
ID=1mA, VGS=0

RDS(on)
Ciss

VGS=15V, ID=1.3A
VDS=20V, f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=20V, f=1MHz
VDS=20V, f=1MHz

Input Capacitance

max

800

Unit
V

VGS=30V, VDS=0

| yfs |

Static Drain-to-Source On-State Resistance

typ

VDS=800V, VGS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.3A

Forward Transfer Admittance

Ratings
min

3.5
0.7

1.0

mA

100

nA

5.5

4.8

1.4
3.6

550

pF

150

pF

70

pF

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2000TS (KOTO) TA-3034 No.55311/4

2SK2632LS
Continued from preceding page.
Parameter

Symbol

Total Gate Charge

Qg

Turn-ON Delay Time

typ

Unit

max

VDS=200V, VGS=10V, ID=2.5A

15

nC

See specified Test Circuit

15

ns

tr

See specified Test Circuit

15

ns

td(off)

See specified Test Circuit

45

ns

tf

See specified Test Circuit

23

Fall Time
Diode Forward Voltage

min

td(on)

Rise Time
Turn-OFF Delay Time

Ratings

Conditions

VSD

IS=2.5A, VGS=0

ns

0.84

1.2

Marking : K2632

Switching Time Test Circuit

VDD=200V
ID=1.3A
RL=154

VGS=15V
PW=1s
D.C.0.5%

VOUT

2SK2632LS
RGS
50

P.G

ID -- VDS

ID -- VGS

4.0

VDS=10V
15V

Tc=--25C

3.5

10V
Drain Current, ID A

Drain Current, ID A

8V
3

7V

3.0

25C

2.5
2.0

75C

1.5
1.0

1
0.5

VGS=6V
0

0
10

20

30

40

Drain-to-Source Voltage, VDS V

50

10

15

Gate-to-Source Voltage, VGS V

RDS(on) -- VGS

10

IT00743

20
IT00744

RDS(on) -- Tc

10

Tc=25C
9

Static Drain-to-Source
On-State Resistance, RDS(on)

Static Drain-to-Source
On-State Resistance, RDS(on)

9
8
7
6

ID =2.5A

5
4

1.3A

0.5A

2
1
0
0

10

12

14

16

Gate-to-Source Voltage, VGS V

18

20

IT00745

8
7

0V
=1
S
G
5V
,V
=1
.3A
S
1
=
,VG
ID
.3A
1
=
ID

6
5
4
3
2
1
0
--50

--25

25

50

75

100

Case Temperature, Tc C

125

150

IT00746

No.55312/4

2SK2632LS
yfs -- ID

7
5
3

5
--2

=
Tc

1.0
7

5C

C
75

3
2

3
2

1.0

0
--50

10
IT00747

SW Time -- ID
VDD=200V
VGS=15V
Forward Current, IF A

3
2
100
7
5

td(off)

tf

tr

3
2
1.0
0.1

1.0

Drain Current, ID A

7 10
IT00749

Drain Current, ID A

Coss

Crss

7
5
3
2

10

15

20

25

Drain-to-Source Voltage, VDS V

ID=2.5A

3
2

30

1m

DC

3
2

Operation in
this area is
limited by RDS(on).

0.1
7
5

1.5

1.0

0.5

5 7 100

Drain-to-Source Voltage, VDS V

Allowable Power Dissipation, PD W

2.0

10
10 ms
op 0ms
era
tio
n

0
s

Tc=25C
3

5 7 1000
IT00752

PD -- Tc

30

2.5

1.2
IT00750

10

1.0
7
5

IT00751

PD -- Ta

3.0

1.0

<10s

0.01 Single pulse

2 3
5 7 10
1.0

10
5

0.8

IDP=7.5A

3
2
0

0.6

F.B A S O

10
7
5

Ciss

100

0.4

Diode Forward Voltage, VSD V

0.2

150
IT00748

VGS=0

f=1MHz

100

IF -- VSD

Ciss, Coss, Crss -- VDS

1000

50

100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2

0.1
7
5
3
2
0.01
7
5
3
2
0.001

td(on)
10
7
5

Case Temperature, Tc C

--25

75
C
25C

1000
7
5

Switching Time, SW Time ns

Tc=

Drain Current, ID A

Ciss, Coss, Crss pF

VDS=10V
ID=1mA

0.1
0.1

Allowable Power Dissipation, PD W

VGS(off) -- Tc

VDS=10V
Cutoff Voltage, VGS(off) V

Forward Transfer Admittance, | yfs | S

10

25

20

15

10

0
0

20

40

60

80

100

120

Ambient Temperature, Ta C

140

160

IT00754

20

40

60

80

100

120

Case Temperature, Tc C

140

160

IT00753

No.55313/4

2SK2632LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
PS No.55314/4

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