Name : NG YIK MANN

Matrix No : 37479

Assignment 1

Bipolar transistor
A bipolar junction transistor (BJT or bipolar transistor) is a type of transistor that relies on the
contact of two types of semiconductor for its operation. their operation involves
both electrons and holes. These two kinds of charge carriers are characteristic of the two
kinds of doped semiconductor material; electrons are majority charge carriers in n-type
semiconductors, whereas holes are majority charge carriers in p-type semiconductors. In
contrast, unipolar transistors such as the field-effect transistors have only one kind of charge
carrier.
Field-effect transistors ( FETs)
The field-effect transistor (FET) is a transistor that uses an electric field to control the shape
and hence the electrical conductivity of a channel of one type of charge carrier in a
semiconductor material. The FET has several forms, but all have high input impedance.
While the conductivity of a non-FET transistor is regulated by the input current (the emitter
to base current) and so has a low input impedance, a FET's conductivity is regulated by a
voltage applied to a terminal (the gate) which is insulated from the device. The applied gate
voltage imposes an electric field into the device, this in turn attracts or repels charge carriers
to or from the region between a source terminal and a drain terminal. The density of charge
characters in turn influences the conductivity between the source and drain.
High electron mobility transistor (HEMTs)
A High-electron-mobility transistor (HEMT) is a field-effect transistor incorporating a
junction between two materials with different band gaps (i.e. a heterojunction) as the channel
instead of a doped region (as is generally the case for MOSFET). HEMT transistors are able
to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies,
and are used in high-frequency products such as cell phones, satellite
television receivers, voltage converters, and radar equipment.
Varactor multipliers
Varactor type of multipliers have a high potential conversion efficiency, but exhibit a narrow
bandwidth and a high sensitivity to operating conditions.The absence of reactive energy
storage in varistor frequency multipliers ensures a large bandwidth. For the ideal varactor
multiplier, i.e., a lossless nonlinear reactance, the theoretical limit is a conversion efficiency
of 100% according to the Manley-Rowe formula. However, real devices exhibit properties
and parameters that are a mixture of the varistor and the ideal varactor multiplier.
IMPATTS (IMPact ionization Avalanche Transit-Time diode)

An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of highpower semiconductor diode used in high-frequency microwave electronics devices. They
have negative resistance and are used as oscillators to generate microwaves as well
as amplifiers. They operate at frequencies between about 3 and 100 GHz or more. A main
advantage is their high-power capability. These diodes are used in a variety of applications
from low-power radar systems to proximity alarms. A major drawback of using IMPATT
diodes is the high level of phase noise they generate. This results from the statistical nature of
the avalanche process.

Transferred electron devices (Gunn devices)

Gunn diodes are also known as transferred electron devices, TED, are widely used in
microwave RF applications for frequencies between 1 and 100 GHz. The Gunn diode is most
commonly used for generating microwave RF signals - these circuits may also be called a
transferred electron oscillator or TEO. The Gunn diode may also be used for an amplifier in
what may be known as a transferred electron amplifier or TEA. As Gunn diodes are easy to
use, they form a relatively low cost method for generating microwave RF signals. The Gunn
diode is a unique component - even though it is called a diode, it does not contain a PN diode
junction. The Gunn diode or transferred electron device can be termed a diode because it does
have two electrodes. It depends upon the bulk material properties rather than that of a PN
junction. The Gunn diode operation depends on the fact that it has a voltage controlled
negative resistance.