An

An Introduction
Introduction of
of Etch
Etch Process
Process

Gumi Process Team3

Kang, Ho Young

Contents

Introduction

Basic of Etch Process

Inside the Plasma
Plasma Etch Equipment
Etch Process Roadmap
Terminology in Etching
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-- 22 --

Basic of Etch Process

Pattern Transfer Method 1

PR Ashing & clean

Film Deposition

Subtractive

Photo

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Lithography

-- 33 --

Etching

Basic of Etch Process

Pattern Transfer Method 2

PR Ashing & clean

Substrate

Additive

Film Deposition

PR Masking

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Basic of Etch Process

Directionality of Etching Process

Anisotropic
Etch
Isotropic Etch
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Directional Etch
-- 55 --

Vertical Etch

Basic of Etch Process

Two Kinds of Etching Method

Dry Etching

Wet Etching

- by Plasma
- Anisotropic etching

- by Wet chemical solution

- Isotropic etching

Vertical E/R Horizontal E/R

Pure Chemical Reaction
High Selectivity
CD Loss or Gain
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Vertical E/R >> Horizontal E/R

Ion assisted
Relatively low Selectivity
No CD bias
-- 66 --

Basic of Etch Process

Wet Process
Advantage
- Low Cost
- Reliability
- High Throughput
- Excellent Selectivity

Disadvantage
- Very hard to control Critical feature Dimension
- Difficult to control the degree of overetching due to undercut
- Decrease in Etch rate as Reagent solutions are consumed
- Hazardous and Difficult to handle
- Toxic Fume
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Basic of Etch Process

Applications of Wet Process

Wet Etching
- Silicon Oxide Etch
SiO2 + 6HF H2SiF6 + 2H2O
HF : Etchant, NH4F : Buffering Agent

- Poly-Si Etch
Si + HNO3 + 6HF H2SiF6 + HNO2 + H2 + H2O
HNO3 : Oxidant, HF : Etchant, CH3COOH : Buffering Agent

- Al Etch
HNO3 : Oxidant, H3PO4 : Etchant
- Silicon Nitiride Etch
Hot (>150C) H3PO4 : Etchant
Cleaning
- Wet Cleaning for Polymer & PR removal
- Pre-cleaning before Deposition & Oxidation
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Basic of Etch Process

Wet Cleaning Process

Particles:
Lift off

Lift-off

SC-1 (NH4OH/H2O2/H2O = 1/4/20 at 80 C) cleaning

Slight etch or
Megasonic vibration

. Si + 2H2O2 = SiO2 + H2O (on Si surface)

. SiO2 + 2NH4OH = ( NH4)2 SiO3 + H2O

Prevent
Re-adsorption

Prevent re-adhesion

. Alkaline solutions like SC-1 or

Same polarity of zeta potential

between particle and substrate

. Surfactant containing acidic solutions

Metals:

SC-2 (HCl/H2O2/H2O= 1/1/6 at 85 C) cleaning

Cleaning solution should take electrons away

fro m ad h eri n g m e tal s a n d d i sso l v e t he m
into solution as positive ions.

M0 (metallic state) in UPW

M0 ---> M+ + e- (ionic state in SC-2)
cf: CLN_B, CLN_R, HF/H2O2, HNO3, HNO3/HF, O3-UPW and etc

Organic impurities:

SPM (H2SO4/H2O2 = 3/1 ~ 4/1 at 90 C ~ 130 C ) cleaning

Cleaning using high redox potential value

to d ecom po se them to sm al ler m ol ec ul es
such as CO2, H 2O and etc.

H2SO4 + H2O2 = H2SO5 + H2O

H2SO5 + Carbon compound = CO2 + H2SO4 + H2O
cf: O3-UPW and etc

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Basic of Etch Process

Particle Removal Mechanism

1cm

Lift off

Lift off

Prevent
re-adhesion

Prevent re-adhesion

1mm

. Slight Etch ( Substrate and/or Particle)

or/and
. Megasonic Irradiation

100m

Raindrop

. Same Polarity of Zeta Potential

between Particle and Substrate
10m

1m

100nm

Mist

Dust

Carbon Mist (Exhaust)

Pollen

Smoke (Cigarette)
MoldTick
Flying Ash
Hair

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Bacteria

Virus

Dry Milk

-- 10
10 --

10

10nm

1nm

Basic of Etch Process

Prevention of Particle Re-deposition

Same polarity of zeta potential between particles and substrate

: Surface Potential
: Stern Potential
: Zeta Potential (mV)
0

X e
=

o x r
Distance

Zeta Potential (mV)

40
0

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Si3N 4

in low pH value:

a-Al 2 O3

a-Al2O3

M-OH2+ + OH-

SiO 2

-20

Si

in high pH value

-40
-60

M-OH + H+ + OH2

10

12

pH

In acidic solution containing

50 surfactant

M-O- + H2O + OHRef: M. Itano, IEEE, (5)p.114,

1992

In case of silicon surface

Hydrophobic

No surfactant

_ + H+

Anion surfactant :
0

Hydrophobic

SiO2

- 50

Si3 N4
Si
Al2 O3

- 100

PSL

+
+

+
Hydrophilic

Hydrophobic

_
_
_
_
_

_+_

- 150
0

Electrostatic Double - Layer Interactions

PSL

M-OH + H+ + OH-

Si3N 4

20

SiO2

_ _

Si

PSL

_ _

Electric Potential

Surface

60

-80

Zeta potential value (mV)

particles

+

+
+

+

+

Diffusion Layer

Stern Layer

In case of silicon oxide surface

Zeta potential value vs. pH

value
80

Slipping Plane(Shear plane)

10

100

Anionic surfactant in 0.5% HF (ppm)

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11 --

11

Ref: T. Kezuka, SWPCC, p.337,1999

Basic of Etch Process

Dry Method of Wet Process

Marangoni Dry
N2 + IPA Mixture
1) Diffusion of IPA into Wafer Surface
- Formation of IPA Layer at Wafer surface

Wafer
Marangoni Force

2) IPA Concentration ; A > B

- Meniscus Geometry
3) IPA Decreases Surface Tension

4) Surface Tension ; A < B

5) Liquid Flow from A to B

- Marangoni force

Water

6) Withdraw wafer out of water

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12

Basic of Etch Process

Some kinds of Contaminant

Contaminant
Adsorbed molecule

Native oxide

Organic
material

Inorganic material
Anion
Cation metal

Si surface

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13

Particle

Basic of Etch Process

Solutions for Removing Polymer

1. Polymer dissolution
2. Polymer lift-off by under-layer slight etch
Low Temp. 23~35

Semi-Aqueous
Fluoride-Based Chemistry

NE-14/28/87/89
EKC-640/650
EG/HF, ST-200

Middle Temp. 50~75

High Temp. 70~90

High Temp. 70~90

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Semi-Aqueous
Amine-Based Chemistry

Aqueous
Amine-Based Chemistry

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14

ACT-935
EKC-265/800/830

PRX-170/180

Basic of Etch Process

Some aftereffects of Wet Cleaning

Incubation time with surface termination

Dependence of Al2O 3 growth on surfaces

60

HF only on c-Si
HF -> SC-1

Deposition at 650

40

30
20
10
4.1
0

on c-Si surface

45

50

4.3 min

Ref: IMEC Bi-weekly report

50

arbitrary units (thickness)

Nitride Film Thickness ()

70

SPM clean
HF last
HF vapor

40
35
30
25
20
15
10
5
0

10

15

20

25

30

35

40

40
number of cycles

Deposition time (min)

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20

-- 15
15 --

15

50

Basic of Etch Process

Definition of Plasma Etching

A

Highly Selective Etch

ESH: PFC emission reduction

- PFC Alternative Gas Evaluation
- Abatement Test

- PEC Test for New Gas Chemistries

Atmosphere

Plasma Diagnostics
- Electrostatic probe
- Mass Spectrometer
- Optical emission Spec.

Chiller
& Heater

Vacuum
Pump

C
B

Low Damage Etch

- Pulsed Plasma Etch & New Source Evaluation

Plasma Etching A + B C

- Damage Characterization

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Abatement
or Recycle

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16

Basic of Etch Process

Sequential Steps in Plasma Etching

Plasma(ex. Cl2 Poly Etch)

Generation of Etchant Species(Discharge)

e + Cl2 2Cl + e
Adsorption
Cl / Cl2 Sisurf - nCl

Reaction
Si - nCl SiClx(ads)

SiO2

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17

Desorption(Pumping Out)
SiClx(ads) SiClx(gas)

Basic of Etch Process

Classification of Plasma Etching Process

(Refer to the Etching Materials)

Silicon Etching(Si, Doped Poly..)

- Process : ISO, WL, BL, Capacitor (SN, CP), Poly E/B etc
- Chemistry : Cl2, HBr, NF3, CF4, SF6, etc
Metal Etching(Al,W,Ti,TiN,Pt, )
- Process : WL, BL, Cap, MLM: Al, W, Pt, Ru, Ta, etc
- Chemistry : Cl2, BCl3, CCl4, etc
Dielectric (SiO2, Si3N4, Low-k Oxide,PSG, ) Etching
- Process : ISO, Contact (Poly C/T, Metal C/T, Via), Spacer
Planar Etch Back, Pad & Repair
- Chemistry : fluoro-compounds(CF4, CHF4, C4F8, .etc)
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18

Basic of Etch Process

Basic Method of Plasma Etching

1.Chemical Etching
2.Sputtering Etching
3.Energetic Ion Enhanced Etching
4.Protective Ion Enhanced Etching

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19

Basic of Etch Process

Basic Method of Plasma Etching

1.Chemical
Thermalized neutral radicals chemically combine with
substrate material forming volatile products
Neutral Radical

Volatile by-Product

- Isotropic
- Purely Chemical Reaction
- High Pressure
- Batch Wafer Type
- Less Electrical Damage

Chemical Reaction

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20

Basic of Etch Process

Basic Method of Plasma Etching

2.Sputtering
The ion energy mechanically ejects substrate material
Sputtered Atom (Molecule)
Ion

Physical bombardment

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21

- Anisotropic
- by Purely Physical Process
- High Directionality
- Low Pressure
: long mean free path
- Single Wafer Type
- Low Etch rate

Basic of Etch Process

Basic Method of Plasma Etching

3.Energetic Ion Enhanced

Ion bombardment enhances or promotes the reaction
between an active species and the substrate material
Ion
Volatile by-Product
Neutral Radical

Chemical Reaction

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22

- Damage Enhanced Chemical

Reactivity
- Chemical Sputtering
- Chemically Enhanced
Physical Sputtering
- Removal of Polymer
as a By-product
- Ion Reaction

Basic of Etch Process

Example of Ion Enhanced Etching

Ar/ XeF2 Chemistry

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23

Basic of Etch Process

Basic Method of Plasma Etching

4.Protective Ion Enhanced

An inhibitor film coats the surface forming a protective barrier
which excludes the neutral etchant
- Sidewall Passivation
- Stopping lateral attack
by neutral radical
- Ion directionality
- Involatile polymer film
- Additive film former

Ion
Sidewall
Passivation
Film

Remove Involatile polymer film

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24 --

(N2 , HBr, BCl3, CH3F ..)

24

Basic of Etch Process

Examples of Protective Etching
HCl/O2/BCl3 Chemistry

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25 --

SF6/ CFCl3 Chemistry

25

Basic of Etch Process

Etching Gas & By-Products

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26

Basic of Etch Process

Difficult Etching Materials in Plasma

Fe, Ni, Co
Halides are not volatile, Carbonyls do not form readily
Cu

Chloride is volatile above 200

Al2O3
Volatile products can be formed but the reaction is uphill
thermodynamically(2Al2O3 + 12Cl => 2Al2Cl6 + 3O2)
Alkali Metals and Alkaline Earths (Groups I and II) tend to
form involatile Halides
LiNbO3, Pyrex (contains Na)
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27

Contents

Introduction

Basic of Etch Process

Inside the Plasma
Plasma Etch Equipment
Etch Process Roadmap
Terminology in Etching
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28

Inside the Plasma

What is Plasma ?
Neutral Particles

Negative Ions

Negative Electrons
Positive Ions

+ -

+
-

+
+

Partially ionized gas containing about equal

concentrations of positive and negative particles and
chemically activated radicals
Degree of ionization (fi)
= No. of charged ions / original atoms and/or molecules
Normally, fi = 10-2 ~ 10-5
Processing plasmas are described by the term
Glow Discharge
Electrically neutral
density of electrons + negative ions
= density of positive ions

+
+

Typical parameter values for a glow discharge plasma

Neutrals

m = 6.6 x 10-23 g
T = 20 = 293K 1/40eV
c = 4.0 x 104 cm/sec

Ions

mi = 6.6 x 10-23 g
Ti = 500K 0.04eV
ci = 5.2 x 104 cm/sec

Electrons

me = 9.1 x 10-28 g
Te = 23000K 2eV
ce = 9.5 x 107 cm/sec

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29

Inside the Plasma

A Variety of Plasmas
Solid State

10 22

Electron Density (cm-3)

10 18

High Pressrue
Arcs
Low Pressrue
Arcs

10 14

Proposed
Thermonuclear
Fusion
High Density
Glow Discharges

Process
Plasmas

10 10
Flames

Solar
Corona

10 6
Ionosphere

10 2
Interstellar
Space

10 -2
10 -2

10 0

10 2

10 4

Electron Temperature (eV)

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30

10 6

Inside the Plasma

Electron Reactions in Plasma

Electron Reaction

Positive Ionization
A + e A+ + 2e

Excitation
A + e A* + e

Recombination

A
Dissociation
M + e 2A* + e

A
A

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hv
Photoemission

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31

e + A A+ + 2e
Ionization
e + A A* + e e + A + h
Excitation & Relaxation
e + A* 2e + A+
Penning ionization
e + AB e + A + B
Dissociation (Radicals)
e + AB 2e + A+ + B
Dissociative ionization
e + AB A- + B
Dissociative attachment

Inside the Plasma

Ignition of Plasmas
Ignition of plasma
Acceleration of e-

Ionization

by E-field

(ion and e-)

Production of

Acceleration of ion

secondary e-

to the electrode

eeAr+

e- A
r
e

Paschen curve (plasma turn on voltage)

Ignition Condition

Sufficient Electron Energy + Sufficient Collisions

H2
VB

- Electron Energy depends on E-Field(Applied Voltage)

Ar

- Collision depends on Pressure and Electrode Gap

Pd (Torr cm)
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32

Inside the Plasma

Sustaining of Plasmas
Power
supply

Limited area
(sheath,
skin depth,
ECR layer)

Bulk
plasma

Sheath

E field

e-

collisions

diffuse out

Energy absorbed by e-

Capacitively coupled plasma

Inductively coupled plasma
Wave heated plasma

Collisional energy loss

ionization
dissociation
excitation
elastic collision
recombination

Diffusional energy loss

ions and electrons to the wall

Charges created in the plasma = charges lost to the wall + charges lost by recombination

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33

Inside the Plasma

Classification of Plasmas
- by the energy transfer mechanism
CCP (Capacitively Coupled Plasma)
powered electrode is directly coupled to the plasma
high electic field is formed near the powered electrode
power transfer efficiency is relatively low but very uniform plasma can be generated
e.g.) DC, RF(13.56MHz), VHF(>30MHz), UHF(~100MHz), MF(~100KHz)

ICP (Inductively Coupled Plasma)

power is transferred to the plasma by the induction, like transformer
no electrode exists inside the plasma
power transfer efficiency is high
substrate bias can be controlled independently

WHP(Wave Heated Plasmas)

power is transferred from the propagating EM wave
power transfer efficiency is very high
e.g.) Microwave plasma, ECR (microwave + B-Field), Helicon and helical plasma(RF + B-Field),
Surface Wave (10MHz ~ 10GHz)
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34

Inside the Plasma

Principles of DC Plasma
V

Cathode
Dark Space

Anode
Dark Space
Vp

+
e-

e-

~10%

e-

Vc

eAr

+
e-

Plasma

+
e-

High Energy Secondary Electron

-Vc

X (Distance)

e-

Cathode
(Electrode)

Plasma : conducting gas

constant potential
Plasma potential (Vp) : maximum potential
Sheath formation : both on anode and on cathode
eAnode sheath voltage drop = Vp
Cathode sheath voltage drop = Vp + Vsupplied
Typical Values in a Glow Discharge
- Ionization : ~1018 electron-ion pairs per second
- Degree of Ionization : 10-3~10-5
- Relative Concentration of Radicals : 10-1~10-3
Anode
(Chamber Wall) - Current Density : the order of 1mA/cm2
e

Ionization
Ionization collision
collision between
between an
an Argon
Argon and
and an
an
electron
electron in
in DC
DC glow
glow discharge
discharge

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35 --

Radical : an atom or collection of atoms with incomplete

chemical bonding (electrically neutral)
eg) F, Cl, O, H, OH, CF, CF2, etc.

35

Inside the Plasma

Generation of DC Self-bias Voltage

Wafer
Bottom Electrode

vb
va

Blocking Capacitor

RF Power

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36

Inside the Plasma

Directional Etching by DC Self-bias

Dark
Space
Sheath

E
E field is formed
by DC Self-bias

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37

Inside the Plasma

Needs for Plasma Diagnostics

Machine Type, Etch Scheme

Etcher / Plasmas

Powers, Gas, Pressure, Temp., etc.

Kinetic energy(IED)
Density (ni)
Angular distribution (IAD)

CFx+ ions
Ar + CF4 + e

e- electrons

Energy(EEDF), density (ne)

CxFy radicals

Density

CF4, Ar molecules

Density(residence time)

Etch rate, profile, selectivity

Wafer

Resistance, Leakage, Cap, etc.

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38

Inside the Plasma

Plasma Diagnostics Tools

Interferrometer
Ar

Optical Emission
Spectrometer
1200
HBr/Ar
1100
1000
900
800
700
600
500
400
300
200
100
0
200 250 300 350 400 450 500 550 600 650 700 750 800

C+

CFH+

CF2O+

10

20

30

40
50
60
Mass (m/e)

70

80

5 mTorr

80

6 mTorr

60

8 mTorr
40

90

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39

10 12 14 16 18 20 22 24 26

Ar 772.4 nm

Ar 750.5 nm
Ar 763.5 nm

3.5 mTorr
100

F 738.7 nm

F 696.5 nm
Ar 706.7 nm

120

20

CF3O+

O+
103

13.56 MHz RF

CF3H+

Intensity (arb. units)

Intensity (count/s)

Ar

140

Coolant

Electrostatic
energy analyzer

He
CF2+
+
+CFO

CO+

Pump

Langmuir Probe

CF3+

9.1% Ar gas ratio

Ion energy = 11 eV
105
CF+

104

TMP

Br 614.9 nm
Br 635.7 nm
H 656.3 nm

Ar 415.8 nm
Ar 420.7 nm

Wavelength (nm)

Langmuir Probe

Mass
spectrometer

H 486.1 nm

OES

Br 444.7 nm
Br 447.7 nm

Mass filter

Si 243.5 nm

Intensity (a.u)

Si 252.8 nm

13.56 MHz RF

Si 288.2 nm

9 Process gases (PG)

Contents

Introduction

Basic of Etch Process

Inside the Plasma
Plasma Etch Equipment
Etch Process Roadmap
Terminology in Etching
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40

Plasma Etch Equipment

Trend of Plasma Etch Equipment

Magnetically
MagneticallyEnhanced
EnhancedRIE
RIE
16Mb,
16Mb,64Mb
64MbDRAM
DRAM

Wet
WetEtching
Etching
Bipolar
BipolarTech.
Tech.
Anisotropy

Plasma
PlasmaEtching
Etching
MOS
MOSTech.
Tech.
Plasma Potential

Plasma Density

Reactive
ReactiveIon
IonEtching
Etching
1Mb,4Mb
1Mb,4MbDRAM
DRAM
DC Self-bias

Parallel
ParallelPlate
PlatePlasma
PlasmaEtching
Etching
64kb
64kb256kb
256kbDRAM
DRAM
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41

High Density Plasma

10E11/cm3

ECR,
ECR,Helical,
Helical,TCP,
TCP,
DPS,
DPS,Helicon,
Helicon,HReHRe>>128Mb
128MbDRAM
DRAM

Plasma Etch Equipment

Plasma density

Trend of Etching Tools Development

Low & Medium Density

Plasma (High Pressure)

High Density Plasma

(Low Pressure)

Pulsed Plasma

NBE (CT)

Neutral Beam Etch

(CT)

Wet Etching

NBE (HT)

Neutral Beam Etch

(Hyper-Thermal)
Electron temperature

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Plasma Etch Equipment

Dry Etching Equipment of Major Maker

0.15

AMAT
LRC
Hitachi

AME8000 / P5000 MxP Series

Centura HDP ICP
LAM Plasma
Etcher

Rainbow RIE Series

TCP / PTX9000 Series

0.10

Centura DPS / IPS / Super-e

Excel / Excelan / Excelan HP
Definium
/ 2300 Series

Hitachi ECR M206 / M216 / M300 / M500 / M600

Sumitomo

Sumitomo ECR OZ Series

M700
Advanced ECR

SWP
DRM
IEM / Advance IEM

TEL

0.13

Anelva / DryTek / PMT(Trikon) / Tegal HRe- / Ulvac / etc

1987 1988 1989 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001

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43

Plasma Etch Equipment

Low Density Plasma Reactors

Barrel Etcher
- Isotropic Etching
- Batch Wafer Type
- Dielectric Vessel
(Quartz, Floating)
- PR Ashing

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- High Throughput
- Inexpensive
- Low Electrical Damage
(Etch Tunnel - Cyl. Mesh)

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44

- No Temp Control
- Non Uniformity
- Undercutting

Plasma Etch Equipment

Low Density Plasma Reactors

Plasma Etcher
- Plasma Etching Mode in Parallel Plate or Planar Reactor
- Wafer placed on the Grounded Electrode
- Capacitively Coupled Plasma

- Isotropic by Radical
- Plasma Potential
(Low Ion Energy)
- High Pressure
- Single Wafer Type
- Less Electrical Damage
- Reinberg Reactor

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

Medium Density Plasma Reactors

RIE Etcher
- Reactive Ion Etching (RIE) = Plasma Etching + Energetic Ion Bombardment
- Reactive Ion Etching (RIE) Reactive Sputter Etching (RSE)
- Wafer placed on the RF-driven Electrode
- Capacitively Coupled Plasma

- Anisotropic by Ion
- DC Self-bias
(High Ion Energy)
- Middle Pressure
- Single Wafer Type
- Electrical Damage

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

Medium Density Plasma Reactors

MERIE Etcher
- Magnetic field is above and Parallel to the cathode surface
- Keep the Secondary Electron by Cycloidal Motion in ExB Field
- Probability for electron-neutral collisions can be increased
- Ionization efficiency in Dark Sheath Region is increased
- B field is rotated electrically
- Anisotropic by Ion
- Low Pressure
- Single Wafer Type
- Lower Electrical Damage

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

Medium Density Plasma Reactors

Ex)MERIE DRM (Tokyo Electron Lab.)
Top Electrode

<Characteristics>

Bottom
Electrode

Medium Pressure Control 10mT

RIE Base
Confined Plasma by Dipole Ring
Magnet

Magnet

- Medium Density Plasma ~ 10 11

Highly Uniform Plasma Density
Lower Etch Damage

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

High Density Plasma Reactors

ICP (Inductively Coupled Plasma)

- Planar, Cylindrical, Dome Type
- Capacitively Initiation & Inductively Breakdown ()
Dim mode, Bright mode
- Lenz Law, Faradays Induction Law

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

High Density Plasma Reactors

Ex)TCP : Lam Research
RF(TCP Power)
TCP coil

<Characteristics>
Low Pressure Control 5mT
Independent Power Control

Wafer

Plasma

- Plasma Source = TCP power

- High Density Plasma ~ 10 12
- Ion DC Bias = Bias Power

Chiller

Low Temperature Etching

RF(Bias power)

: -50C ~ +50C
Improved Plasma Uniformity
Vacuum
pump

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

High Density Plasma Reactors

Ex)HDP : Applied Materials
<Characteristics>
Low Pressure Control 5mT
Power Transfer by ICP Coil
- High Density Plasma ~ 10 12

High Density Plasma

~1012 /cm3 Ion Density

- Ion DC Bias = Bias Power

Wafer
Electrode

Polymer Control by Roof-Si

Improved Plasma Uniformity

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

High Density Plasma Reactors

ECR (Electron Cyclotron Resonance)

Cyclotron Resonance = Maximum Electron Energy
Angular Frequency in B field (875G) =
Microwave Frequency (2.45GHz)

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

High Density Plasma Reactors

Helicon (M0RI)
- Helicon Wave : Power Transfer >1000 than Collision Process
- Landau Damping : Collisionless Mechanism

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Plasma Etch Equipment

High Density Plasma Reactors

Ex)M RI Helicon (Trikon)
Quartz Belljar RF Source

<Characteristics>

Coil

Low Pressure Control 3mT

Magnetic
Bucket

Independent Power Control

- Plasma Source = MRI Coil

Gas Inlet Hole 4 Places

- High Density Plasma ~ 10 12~13

Low Temperature Etching

Wafer

: -50C ~ +50C

Coolant

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

Highly Uniform Plasma Density

RF Bias
Backside
Helium

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Lower Etch Damage

54

Plasma Etch Equipment

Trends of HDP Reactors

- Low Temperature Process : Low Activity of Radical
Anisotropic, Less Polymer Clean Process
- Low Pressure Process : Long Mean Free Path, Fine Patterning
- In-situ Process
: Single Wafer
: Multi-chamber
- High Density Plasma
: High Etch Rate

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Contents
Introduction
Basic of Etch Processes
Inside the Plasma
Plasma Etch Equipment
Etch Process Roadmap
Terminology in Etching

Hynix
Hynix Semiconductor
Semiconductor

SQRA - 021125

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Terminology in Etching

1.Etch Rate
- Etched Thickness per Unit time
- nm/min, /min, /sec

x
Etch Rate ( E / R ) =
t

Etch Rate
- RF Power
Source Power
Bias Power
- Gas Flow Rate
- Pressure
- B Field (Gauss)
- Electrode Temp
- Pattern Density
Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

Etch Time = t

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Terminology in Etching

2.Etching Selectivity
- The Ratio of the Etch Rates of two Materials etched
Simultaneously such as etched Layer and PR mask

S A/ B

EA
=
EB

In same Plasma Condition

E A = Etch Rate of Layer A
E B = Etch Rate of Layer B
S A / B : Selectivity of A to B

- Selectivity to PR mask and Under-layer is needed

in the most of Etch Process for the Over Etch
- by Gas Chemistry Control
Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

3.Etching Uniformity
- or Non-uniformity
- Point to Point Within a Wafer, Wafer to Wafer, Lot to Lot
[ Emax Emin ]
Uniformity ( %) =
100
2 Ei / N

Ei : Etch Rate at Several Points

Emax : Maximum Etch Rate
Emin : Minimum Etch Rate
- Chamber Configuration : Pumping Position, Gas Inlet Position
- B-field, Etch Mode, Power, Pressure ..
Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

4.EPD(End Point Detection)

-Pressure Change
-Impedence Change
-Mass Spectrometry
-Optical Emission
Spectroscopy
-Laser Interferometry
& Reflectance
- Etchant Signal, by-product Signal, Underlying by-product
- End-point, Just Etching & Over Etching
Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

Example of Optical Emission Spectroscopy

EPD Signal Sample
(Lam Research TCP9460)

Back He Pressure
Chamber Pressure
EPD Channel A
( = 405 )
EPD Channel B
( = 550 )

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

5.Loading Effect 1
The Difference of Etchant
Concentration per Unit Area

1.Macro-Loading
- In the Constant supply
of Reactants, Etch rate
goes down with increase
the Surface Area
Sufficient supply
of Ethant
- High Pressure
- High Source Power
- Low Bias Power (Slope)

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

5.Loading Effect
2.-Loading (and Reverse -Loading)
- Sputtered materials and
redeposition (Polymer)
slow down Etch rate
at Tight Spaces

The Difference of Pump out Rate

Shorter Residence Time

- Low Pressure
- High Total Flow Rate

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching
Some Example of -Loading
0.2um

0.3um

0.6um

Open Area

9mT

6mT

3mT
Bottom Rounding: 20mT

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

6. -Trench
1. Mask charging by electrons

2. Ion reflection from sidewall

+ +

sheath
+

e-

+
+ +

reflected ion flux

direct ion flux

reflection
probability

+++

Parameters: sheath potential,

electron density,
negative ion density, etc

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

sheath

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Photoresist

Oxide

Parameters: Ion angular distribution

& sidewall slope, etc.

65

Terminology in Etching
Some Examples of -Trench
4 mTorr

8 mTorr

10 mTorr

Pressure Dependency

0.25 um

0.30 um

100 W

0W

Bias Power Dependency

0.40 um

0.50 um

Open area (>300 um)

Pattern Dependency

85.5

86.5

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

87.0

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87.5

66

86.0

Terminology in Etching

7.Abnormal Plasma Etching

Under
Etch

Residue, Stringer

Over Etch

These Defects are caused by Insufficient Etching Target(depends on Topology)

Abnormal EOP, Non-Uniform Pattern Layout and Plasma Unstable(Chamber
Para.:Power,Pressure,Gas Flow..) etc.
Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

9.ESC(ElectroStatic Chuck)
It is impossible to be operated vacuum chuck at vacuum chamber. So the mechanical
chuck(Clamp) is adopted, but there were many disadvantages. On the contrary, ESC
proposed by Wardly in 1973 has several advantages. In recent semiconductor
industry, ESC is the general clamping system of vacuum chamber.

Vpp

Plasma
Ion Sheath

Wafer

Vdc

Insulator
Electrode
Applied V

Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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Terminology in Etching

10. After Treatment in Etching

Light Etch
- Si surface Damage removal.
- After treatment of Contact, LDD, etc
- Chemical Downstream Etch

IMD adhesion Treatment

- Prevent the IMD Peel-Off
cf)O2 Plasma Treatment after SOG E/B

Al Passivation
- Prevent the corrosion of pure Al
- O3 Plasma Treatment
cf) Al2O3 Formation
Hynix
Hynix Semiconductor
Semiconductor SQRA - 021125

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