TIP120, TIP121, TIP122

NPN SILICON POWER DARLINGTONS

Designed for Complementary Use with

TIP125, TIP126 and TIP127

TO-220 PACKAGE
(TOP VIEW)

65 W at 25C Case Temperature

5 A Continuous Collector Current

Minimum hFE of 1000 at 3 V, 3 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING

SYMBOL
TIP120

Collector-base voltage (IE = 0)

TIP121

V CBO

80

100

TIP120
TIP121

UNIT

60

TIP122
Collector-emitter voltage (IB = 0)

VALUE

60
VCEO

TIP122

80

100
VEBO

IC

ICM

IB

0.1

Continuous device dissipation at (or below) 25C case temperature (see Note 2)

Ptot

65

Continuous device dissipation at (or below) 25C free air temperature (see Note 3)

Ptot

LIC2

50

mJ
C

Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current

Unclamped inductive load energy (see Note 4)

Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.

Tj

-65 to +150

Tstg

-65 to +150

TL

260

This value applies for tp 0.3 ms, duty cycle 10%.

Derate linearly to 150C case temperature at the rate of 0.52 W/C.
Derate linearly to 150C free air temperature at the rate of 16 mW/C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.







DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIP120, TIP121, TIP122

NPN SILICON POWER DARLINGTONS
electrical characteristics at 25C case temperatur e
PARAMETER
V(BR)CEO

ICEO

ICBO

IEBO
hFE
VCE(sat)
VBE
VEC

Collector-emitter
breakdown voltage

TEST CONDITIONS

MIN
TIP120

IC = 30 mA

IB = 0

(see Note 5)

TYP

MAX

TIP121

80

TIP122

100

VCE = 30 V

IB = 0

TIP120

0.5

VCE = 40 V

IB = 0

TIP121

0.5

VCE = 50 V

IB = 0

TIP122

0.5

VCB = 60 V

IE = 0

TIP120

0.2

VCB = 80 V

IE = 0

TIP121

0.2

VCB = 100 V

IE = 0

TIP122

0.2

VEB =

5V

IC = 0

Forward current

VCE =

3V

IC = 0.5 A

transfer ratio

VCE =

3V

IC =

3A

Collector-emitter

IB = 12 mA

IC =

3A

saturation voltage

IB = 20 mA

IC =

5A

VCE =

3V

IC =

3A

IE =

5A

IB = 0

Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current

Base-emitter
voltage
Parallel diode
forward voltage

2
(see Notes 5 and 6)

UNIT

60

mA

mA

mA

1000
1000
2

(see Notes 5 and 6)

(see Notes 5 and 6)

2.5

(see Notes 5 and 6)

3.5

MAX

UNIT

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER

MIN

TYP

RJC

Junction to case thermal resistance

1.92

C/W

RJA

Junction to free air thermal resistance

62.5

C/W

MAX

UNIT

resistive-load-switching characteristics at 25C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

ton

Turn-on time

IC = 3 A

IB(on) = 12 mA

IB(off) = -12 mA

1.5

toff

Turn-off time

VBE(off) = -5 V

RL = 10

tp = 20 s, dc 2%

8.5

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.


2





DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIP120, TIP121, TIP122

NPN SILICON POWER DARLINGTONS

TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V

TCS120AA

40000

hFE - Typical DC Current Gain

COLLECTOR-EMITTER SATURATION VOLTAGE

vs
COLLECTOR CURRENT

TC = -40C
TC = 25C
TC = 100C
10000

1000

VCE = 3 V
tp = 300 s, duty cycle < 2%
100
05

10

50

TCS120AB

20
tp = 300 s, duty cycle < 2%
IB = I C / 100
15

10

05
TC = -40C
TC = 25C
TC = 100C
0
05

IC - Collector Current - A

10

50

IC - Collector Current - A

Figure 1.

Figure 2.

BASE-EMITTER SATURATION VOLTAGE

vs
COLLECTOR CURRENT

TCS120AC

VBE(sat) - Base-Emitter Saturation Voltage - V

30

25

TC = -40C
TC = 25C
TC = 100C

20

15

10
IB = IC / 100
tp = 300 s, duty cycle < 2%
05
05

10

50

IC - Collector Current - A

Figure 3.







DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIP120, TIP121, TIP122

NPN SILICON POWER DARLINGTONS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100

SAS120AA

IC - Collector Current - A

DC Operation
tp = 300 s,
d = 0.1 = 10%

10

10

TIP120
TIP121
TIP122
01
10

10

100

1000

VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE

TIS120AA

Ptot - Maximum Power Dissipation - W

80
70
60
50
40
30
20
10
0
0

25

50

75

100

125

150

TC - Case Temperature - C

Figure 5.


4





DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.