Single P-Channel Trench MOSFET, -30V, -11A, 12.

1m
General Description

Features

The MDS3604 uses advanced MagnaChips MOSFET

Technology to provide low on-state resistance.

This device is suited for Power Management and load

switching applications common in Notebook Computers
and Portable Battery Packs.

VDS = -30V
ID = -11A @VGS = -10V
RDS(ON)
< 10.0m @VGS = -20V
< 12.1m @VGS = -10V
< 18.3m @VGS = -5V

Applications

6(D)
7(D)
8(D)

Load Switch
General purpose applications
Smart Module for Note PC Battery

5(D)

2(S)

4(G)
3(S)

1(S)
S

Absolute Maximum Ratings (Ta =25oC unless otherwise noted)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

25

Continuous Drain Current

ID

-11

Pulsed Drain Current

(Note 1)

IDM

-44

Power Dissipation

PD

2.5

W
mJ

Single Pulse Avalanche Energy

(Note 2)

Junction and Storage Temperature Range

EAS

84.5

TJ, Tstg

-55~150

Symbol

Rating

RJA

50

RJC

25

Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient

(Note 1)

Unit
o

C/W

Thermal Resistance, Junction-to-Case

May. 2011 Version 1.1

MagnaChip Semiconductor Ltd.

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m

MDS3604

Part Number

Temp. Range

MDS3604URH

-55~150 C

Package

Packing

Quantity

RoHS Status

SOIC-8

Tape & Reel

3000 units

Halogen Free

Electrical Characteristics (Ta = 25oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics
Drain-Source Breakdown Voltage

BVDSS

ID = -250A, VGS = 0V

-30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1.0

-1.8

-3.0

Drain Cut-Off Current

IDSS

VDS = -30V, VGS = 0V

Gate Leakage Current

IGSS

VGS = 25V, VDS = 0V

0.1

VGS = -20V, ID = -12A

8.6

10

VGS = -10V, ID = -12A

10

12.1

VGS = -5V, ID = -10A

14.6

18.3

VDS = -5V, ID = -10A

25.5

30.5

5.2

7.0

1433

212

338

Drain-Source ON Resistance

Forward Transconductance

RDS(ON)

gFS

-1

Dynamic Characteristics
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = -15V, ID = -12A

VGS = -10V

nC

Input Capacitance

Ciss

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

Turn-On Delay Time

td(on)

15.2

Turn-On Rise Time

tr

12.9

Turn-Off Delay Time

td(off)

50.6

34.6

-0.73

-1.0

nC

Turn-Off Fall Time

VDS = -15V, VGS = 0V,

f = 1.0MHz

VGS = -10V ,VDS = -15V,

RL = 1.25, RGEN = 3

tf

pF

ns

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

IS = -1A, VGS = 0V
IF = -12A, di/dt = 100A/s

38.5

35.9

ns

Note :
1.
2.

Surface mounted FR-4 board by JEDEC (jesd51-7)

Starting TJ=25C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V.

May. 2011 Version 1.1

MagnaChip Semiconductor Ltd.

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m

Ordering Information

45

-10.0V

40

20

-5.0V

-4.0V

-6.0V

35

RDS(ON) [m ]

-8.0V

-ID [A]

30
25
VGS=-3.5V

20
15
10

VGS=-5V

15

VGS=-10V

10

VGS=-3.0V

5
VGS=-2.5V

0
0.0

0.5

1.0

1.5

2.0

2.5

10

20

-VDS [V]

40

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.1 On-Region Characteristics

1.8

30
*Note; ID=-12A

*Note ; ID=-12A

1.6

25
1.4

RDS(ON) [m ]

RDS(ON), (Normalized)
Drain-Source On-Resistance [m ]

30

-ID [A]

VGS=-10V

1.2

20

15

1.0

10

0.8

0.6
-50

-25

25

50

75

100

125

150

TJ, Junction Temperature []

10

-VGS [V]

Fig.3 On-Resistance Variation with

Temperature

Fig.4 On-Resistance Variation with

Gate to Source Voltage

30
Notes :

* Note ; VDS=-5V

VGS = 0V

-IS, Reverse Drain Current [A]

25

-ID [A]

20

15

10

0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

10

0.0

-VGS [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics

May. 2011 Version 1.1

10

Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

MagnaChip Semiconductor Ltd.

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m

25

50

2.5n
* Note :VDS = -15V
ID = -12A

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

Capacitance [pF]

2.0n

-VGS [V]

Ciss

1.5n

1.0n
Notes ;
1. VGS = 0 V
2. f = 1 MHz

Coss

500.0p
Crss

0
0

10

20

30

0.0

40

10

15

-Qg [nC]

Fig.7 Gate Charge Characteristics

10

20

25

30

-VDS [V]

Fig.8 Capacitance Characteristics

16

100 us
14

1 ms
10

10 ms

12

10

10

1s

Operation in This Area

is Limited by R DS(on)

10s
100s
DC

-ID [A]

-ID [A]

100 ms

8
6

10

-1

4
Single Pulse
R ja=50/W
Ta=25

10

-2

10

-1

10

10

10

25

50

75

100

125

150

Ta []

-VDS [V]

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs.

Ambient Temperature

Z Ja, Normalized Thermal Response [t]

10

10

D=0.5
0.2
-1

0.1
* Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Z JA* R JA(t) + TA
R JA=50/W

10

0.05
0.02
-2

0.01

10

single pulse
-5

10

-4

10

-3

10

-2

10

-1

10

10

10

10

10

t1, Rectangular Pulse Duration [s]

Fig.11 Transient Thermal Response Curve

May. 2011 Version 1.1

MagnaChip Semiconductor Ltd.

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m

10

8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified

May. 2011 Version 1.1

MagnaChip Semiconductor Ltd.

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m

Physical Dimensions

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m

DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.

May. 2011 Version 1.1

MagnaChip Semiconductor Ltd.