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6MHz VFO
Cv min
Cv max
C1
RFC
1mH
Inc C1 by
C1
C2
J310
pF
pF
pF
pF
pF
pF
pF
pF
C4
C5
Cv
C2
C3
C4
C5
15
52
330
7.5 337.5
47
470
5
5
52 uH
Design
2.605 MHz
Frequency 3.105 MHz
C3
Cs
Cl min
57.77
Cl min
Cl min'
Ct max
Ctmax'
Cl max
94.77
Cu
335
Cu'
342.5
C1/Cv = 6.4904
Cs
10,000 pF
49.27167
49.43088
73.87086
74.22929
pF
pF
pF
pF
(C3+C4)/C2 = 10.10638
Xc=
Fmax =
Fmax'
Fmin =
Fmin'
3.143862 MHz
3.138795
0.0050668
2.567589 MHz
2.561383
0.0062065
C1
C1+
C1
C1+5pF
6.1978 ohms at Fl
5.0617 ohms at Fh
Note that Cv should be made up of a fixed capacitor in parallel with a variable capacitor.
C2 may be increased to 100pF for lower gain devices but Cv must be recalculated.
Adequate buffering must be provided to prevent frequency pulling.
C4 and C5 represent the device gate and drain capacitances
Cells I20 and I23 show the effect of varying the drain to ground capacity by the value in I6 for RIT purposes.
Red cells for data entry
Blue cells are calculated results - do not overtype.
Page 1
2.6MHz VFO
MHz
MHz
7.5 pF
C1+5pF
RIT purposes.
Page 2
5MHz VFO
Cv min
Cv max
C1
RFC
1mH
Inc C1 by
C1
C2
J310
pF
pF
pF
pF
pF
pF
pF
pF
C4
C5
Cv
C2
C3
C4
C5
57
90
330
2.6 332.6
47
470
5
5
L
Design
Frequency
C3
10.8 uH
5 MHz
5.5 MHz
Cs
Cl min
99.77
Cl min
Cl min'
Ct max
Ctmax'
Cl max 132.77
Cu
335
Cu'
337.6
C1/Cv = 3.6956
Cs
10,000 pF
76.87395
77.01004
95.08416
95.29246
pF
pF
pF
pF
(C3+C4)/C2 = 10.10638
Xc=
Fmax =
Fmax'
Fmin =
Fmin'
5.522839 MHz
5.517956
0.0048824
4.965899 MHz
4.960468
0.0054305
C1
C1+
C1
C1+
3.2045 ohms at Fl
2.8814 ohms at Fh
Note that Cv should be made up of a fixed capacitor in parallel with a variable capacitor.
C2 may be increased to 100pF for lower gain devices but Cv must be recalculated.
Adequate buffering must be provided to prevent frequency pulling.
C4 and C5 represent the device gate and drain capacitances
Cells I20 and I23 show the effect of varying the drain to ground capacity by the value in I6 for RIT purposes.
Excessive supply level will cause device failure by exceeding the maximum drain gate peak voltage.
Red cells for data entry
Blue cells are calculated results - do not overtype.
Page 3
5MHz VFO
MHz
MHz
2.60
2.60
RIT purposes.
Page 4
6MHz VFO
Cv min
Cv max
C1
RFC
1mH
Inc C1 by
J310
L
C1
C2
J310
pF
pF
pF
pF
pF
pF
pF
pF
C4
C5
Cv
2
C2
C3
C4
C5
15
75
390
392
220
680
5
5
L
Design
Frequency
C3
4.754 uH
6 MHz
6.5 MHz
Cs
Cl min
181.52
Cl max 241.52
Cu
395
Cu'
397
C1/Cv = 5.2267
Cs
10,000 pF
Cl min
Cl min'
Ct max
Ctmax'
124.3673
124.5649
149.8778
150.1649
(C3+C4)/C2 =
3.113636
pF
pF
pF
pF
Xc=
Fmax =
Fmax'
6.544571
6.539378
- 5.1924462
Fmin =
5.961637
Fmin'
5.955936
+ 5.7006322
MHz
KHz
MHz
C1
C1+ 2.00
C1
C1+ 2.00
Khz
2.6693 ohms at Fl
2.4315 ohms at Fh
Note that Cv should be made up of a fixed capacitor in parallel with a variable capacitor.
C2 may be increased to 100pF for lower gain devices but Cv must be recalculated.
Adequate buffering must be provided to prevent frequency pulling.
C4 and C5 represent the device gate and drain capacitances
Cells I20 and I23 show the effect of varying the drain to ground capacity by the value in I6 for RIT purposes.
Excessive supply level will cause device failure by exceeding the maximum drain gate peak voltage.
Red cells for data entry
Blue cells are calculated results - do not overtype.
Page 5