AON7403

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AON7403/L uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
AON7403 and AON7403L are electrically identical.
-RoHS Compliant
-AON7403L is Halogen Free

VDS (V) = -30V

(VGS = -10V)
ID = -8A
RDS(ON) < 18m (VGS = -10V)
RDS(ON) < 36m (VGS = -4.5V)

DFN 3x3
Top View

Bottom View

S
S
S
G

Pin 1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25C

Continuous Drain
Current B,G
C

TA=70C
B

27
11

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

1.6

PDSM

TA=70C

Alpha & Omega Semiconductor, Ltd.

25

-6

PD

TC=100C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D

Units
V

-80

IDSM

TA=25C
Power Dissipation

Maximum
-30

-8

TC=25C
Power Dissipation

-20

ID
IDM

TA=25C

Continuous Drain
Current

-20

TC=100C

Pulsed Drain Current

D
D
D
D

RJA
RJC

Typ
30
60
4

Max
40
75
4.5

Units
C/W
C/W
C/W

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AON7403

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=-250A, VGS=0V

-30
-1

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS= 25V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.7

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-80

TJ=55C

VGS=-10V, ID=-8A
TJ=125C

Static Drain-Source On-Resistance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr
Qrr

14

18

VDS=-5V, ID=-10A

21
-0.7

1130
VGS=0V, VDS=-15V, f=1MHz

m
S

-1

-3

1400

pF

240

pF

155

pF

VGS=0V, VDS=0V, f=1MHz

5.8

18

24

VGS=-10V, VDS=-15V, ID=-8A

5.5

nC

3.3

nC

Gate Drain Charge

tD(on)

-3

36

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance

-2.2

25

Diode Forward Voltage

IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current

A
nA

26

VSD

Units

100

20

Forward Transconductance

Coss

-5

VGS=-4.5V, ID=-6A
gFS
IS

Max

VDS=-30V, VGS=0V

IDSS

RDS(ON)

Typ

nC

8.7

ns

VGS=-10V, VDS=-15V, RL=1.8,

RGEN=3

8.5

ns

18

ns

IF=-8A, dI/dt=500A/s

12

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/s

ns
16

26

ns
nC

A: The value of R JA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating I DSM are
based on TJ(MAX)=150C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on T J(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C.
D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient.
150
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C.
The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev0: Jun 2008

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AON7403

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80

80

VDS=-5V

-10V

-8V
60

60

-ID(A)

-ID (A)

-6V
40

40

-4.5V
20

20

125C

VGS=-4V

25C

0
0

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Figure 1: On-Region Characteristics

40

1.8
Normalized On-Resistance

35
RDS(ON) (m)

VGS=-4.5V

30
25
20

`V =-10V
GS

15

VGS=-10V
ID=-8A

1.6

1.4
VGS=-4.5V
ID=-6A

1.2

10
0

10

15

20

0.8
0

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

10

50

150

ID=-8A

1
40

125C

-IS (A)

RDS(ON) (m)

0.1
30
125C

25C
0.01
0.001

20

0.0001
25C
0.00001

10
2

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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AON7403

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

10
VDS=-15V
ID=-8A

1200
Capacitance (pF)

-VGS (Volts)

8
6

VDS=VGS ID=1mA

Ciss
900
600

300

0
0

10

15

20

1.4
50
Coss
Crss
0

1000.0

50

100.0

40

10s
100s

10.0
RDS(ON)
limited

10ms
100m
10s

DC

TJ(Max)=150C
TA=25C

0.1

10

ZJA Normalized Transient

Thermal Resistance

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=75C/W

800
140
80
0.5

20

25

30

220
140

TJ(Max)=150C
TA=25C

15
7

30
20

0
0.001

100

0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

10

15

10

0.0
0.1

10

-VDS (Volts)
Figure 8: Capacitance Characteristics

Power (W)

-ID (Amps)

Qg (nC)
Figure 7: Gate-Charge Characteristics

1.0

1.8

0.01

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD NOT ASSUME ANY LIABILITY ARISING
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH
Ton
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
T
0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com