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Imaging
Spectroscopy
200 nm
Introduction
EM and materials
The interesting objects for TEM is not the average structure
or homogenous materials but
local structure and inhomogeneities
Defects
Interfaces
Precipitates
Basic TEM
Electron source (HV= 200kV)
Apertures
Magnetic lenses
Sample holder
Fluorescence screen
Recording media
(Film/CCD/ TV)
Instrumentation
Filament
Objective lens
Intermediate lenses
-Spherical
- Chromatic
-Astigmatism
Resolution limit
Year
1940s
1950s
1960s
1970s
1980s
1990s
2000s
Resolution
~10nm
~0.5-2nm
0.3nm (transmission)
~15-20nm (scanning)
0.2nm (transmission)
7nm (standard scanning)
0.15nm (transmission)
5nm (scanning at 1kV)
0.1nm (transmission)
3nm (scanning at 1kV)
<0.1 nm (Cs correctors)
http://www.sfc.fr/Material/hrst.mit.edu/hrs/materials/public/ElecMicr.htm
Backscattered electrons
Auger electrons
Cathodoluminescence
Secondary electrons
X-rays
Absorbed electrons
EBIC
Specimen
Elastically scattered
electrons
Inelastically scattered
electrons
Transmitted electrons
Gas
Heating
Cooling
TEM specimens
TEM grids
Cooling
Standard
Heating
3 mm
Operating modes
Convergent beam
Parallel beam
Can be scanned
(STEM mode)
Specimen
Spectroscopy and mapping
(EDS and EELS)
Imaging mode
or
Diffraction mode
A.E. Gunns
MENA3100 V13
b
a
Si
Sample
1,1 nm
PowderCell 2.0
Objective lense
Diffraction plane
(back focal plane)
Image plane
A.E. Gunns
MENA3100 V13
Anode
1. and 2. condenser
lenses
Spesimen
Objective lens
Bi-prism
Objective aperture
Selected area aperture
Diffraction plane
Image plane
Intermediate lenses
Projector lens
Viewing screen
A.E. Gunns
MENA3100 V13
b
a
Si
Sample
1,1 nm
PowderCell 2.0
Objective lense
Diffraction plane
(back focal plane)
Image plane
Electron diffraction
Elastic scattered electrons
2dsin=n
Electrons interacts 100-1000 times stronger with matter than X-rays
-more absorption (need thin samples)
-can detect weak reflections not observed with x-rays
Objective lense
Diffraction pattern
Selected area
aperture
Image plane
A.E. Gunns
MENA3100 V13
BiFeO3
Pt
TiO2
Lim
SiO2
Bi
Bi
O
O
Si
Bi
Bi
Fe
O
Bi
Fe
Fe
O
O
O
O
200 nm
Fe
Bi
Fe
Fe
Bi
Bi
O
O
O
Bi
Bi
Bi
Fe
Goal:
Fe
Fe
O
O
O
Fe
Bi
Fe
Bi
Bi
O Fe
Bi
Bi
Po wd erCell 2 .0
15o
50 nm
10o
0o
BiFeO3
x 1000
counts
CCD
x 1000
counts
CCD
1_1evprc.PICT
Nr_2_1evprc.PICT
40
14
35
12
O-K
Fe - L2,3
30
10
25
8
20
6
BiFeO3
Ukjent fase
4
15
2
10
-0
5
500
1400
eV pr. kanal
-0 eV forskyvning,
200
600
-0
200
Energy
(eV)
400 Loss 600
Energy Loss (eV)
800
800
1000
1000
Comparison of interaction volumes in an SEM, Thermionic TEM and FEG TEM showing much smaller interaction
volume for TEM.
Electron Diffraction
Diffraction patterns give crystallographic information about a material from site specific small volumes, unlike XRD
which is a bulk analysis technique.
Can determine if a material is amorphous, crystalline or poly crystalline quickly and effectively.
a)
b)
c)
Superlattice structure gives information about the long range make up of a material.
SuperLattice Reflections
Patterns a) to c) are electron diffraction patterns taken from CaTiO3 super lattice reflections are seen showing the
presence of Cation Shifts (cs), In-phase tilting (it) and antiphase tilting(at).
a)
000
001
b)
010
c)
0-11
at
001
1-10
000
cs
000
at
-110
It(ii)
It(i)
cs
001
e)
d)
f)
010
cs
10-1
1-10
o2 000
000
it
0-11
a
(o1 and
t
(a-a-c+)
o1
o2).
o1
000
at
o2
10-1
o1
it
long range
it
ordering as well.
Ordering Peak
Intensity
Intensity
2Theta
SMN ordering
peak in XRD
The ordering peak (~20 2 Theta) in SMN is much larger (Approx. 12X) than
the same peak in SZN.
Consequently, the ordering peak in SZN is easy to overlook. This is not a
2Theta
SZN ordering
peak in XRD
Major perovskite
reflection
Major perovskite
reflection
(hk0)In phase
tilting reflection
<111> electron diffraction
pattern of CT
(hkl)anti phase
tilting reflection
1/3
(hkl)ordering
reflection
Electron diffraction therefore provides a powerful tool for the investigation of superlattice reflections in materials
(e.g. Tilting, ordering and layered structures).
Symmetry Analysis
Convergent Beam Electron Diffraction (CBED) is a powerful tool for analysing and identifying symmetry in
materials.
a)
b)
a)Convergent Beam Electron Diffraction (CBED) pattern showing Six fold rotational symmetry and b)Selected
area Diffraction Pattern (SADP) of same area.
Unknown materials can be analysed and their space groups be found to aid identification\characterisation.
Symmetry Analysis 2
Overlaying of CBED patterns gives a map of the crystal which you can navigate around to find the region\ zone axis
(direction) of interest.
<111>
<110>
<100>
Dark Field images are formed from specific diffracted beams, giving orientation contrast.
Bright Field images are formed using spot A.
A typical Dark Field images would be formed using spot B.
Bright field images contain information from all electrons that have passed through the sample therefore subtle
features are hidden.
With Dark Field images, a specific plane can be viewed in order to see specific crystallographic features such as
dislocations, regions of ordering or strain fields etc.
Dark field images typically have considerably higher contrast than bright field images although the intensity is
greatly reduced.
Image formation for a Bright Field, Displaced Aperture Dark Field (DADF) and Centred Aperture Dark Field
(CADF) image.
a)
b)
001
at
000
110
d)
010
000
1.0 m
10-1
cs
1.0 m
b)
a)
300nm
Image a) Dark Field image of unshadowed and unstained DNA, Image b) illuminated with ordering superlattice
reflection regions of ordering clearly visible.