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by MJL21193/D

SEMICONDUCTOR TECHNICAL DATA









  

The MJL21193 and MJL21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.

*Motorola Preferred Device

16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS

Total Harmonic Distortion Characterized

High DC Current Gain hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second

CASE 340G02
TO3PBL

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

250

Vdc

CollectorBase Voltage

VCBO

400

Vdc

EmitterBase Voltage

VEBO

Vdc

CollectorEmitter Voltage 1.5 V

VCEX

400

Vdc

Collector Current Continuous

Collector Current Peak (1)

IC

16
30

Adc

Base Current Continuous

IB

Adc

Total Power Dissipation @ TC = 25C

Derate Above 25C

PD

200
1.43

Watts
W/C

TJ, Tstg

65 to +150

Symbol

Max

Unit

RJC

0.7

C/W

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

VCEO(sus)

250

Vdc

ICEO

100

Adc

OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5.0 s, Duty Cycle 10%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

  
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typical

Max

Unit

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0)

IEBO

100

Adc

Collector Cutoff Current

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

ICEX

100

Adc

4.0
2.25

25
8

75

2.2

1.4
4

OFF CHARACTERISTICS

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)

IS/b

Adc

ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)

hFE

BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)

VBE(on)

CollectorEmitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

Vdc
Vdc

DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)

THD
hFE
unmatched
hFE
matched

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%

0.8

0.08

fT

MHz

Cob

500

pF

NPN MJL21194

6.0

VCE = 10 V

5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1

TJ = 25C
ftest = 1 MHz
1.0

10

f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

PNP MJL21193
6.5

8.0
7.0
10 V

6.0
5.0
VCE = 5 V

4.0
3.0
2.0
1.0
0
0.1

TJ = 25C
ftest = 1 MHz
1.0

IC COLLECTOR CURRENT (AMPS)

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

Motorola Bipolar Power Transistor Device Data

10

  
TYPICAL CHARACTERISTICS
PNP MJL21193

NPN MJL21194
1000

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

1000

TJ = 100C
25C

100

25C

TJ = 100C
25C
100
25C

VCE = 20 V
10
0.1

VCE = 20 V

1.0
10
IC COLLECTOR CURRENT (AMPS)

10
0.1

100

Figure 4. DC Current Gain, VCE = 20 V

PNP MJL21193

NPN MJL21194
1000

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

100

Figure 3. DC Current Gain, VCE = 20 V

1000

TJ = 100C
25C
100
25C

TJ = 100C
25C
100
25C

VCE = 5 V
10
0.1

VCE = 20 V

1.0
10
IC COLLECTOR CURRENT (AMPS)

10
0.1

100

Figure 5. DC Current Gain, VCE = 5 V

1.0
10
IC COLLECTOR CURRENT (AMPS)

100

Figure 6. DC Current Gain, VCE = 5 V

PNP MJL21193

NPN MJL21194

30

35

25
20

IB = 2 A

I C, COLLECTOR CURRENT (A)

1.5 A
I C, COLLECTOR CURRENT (A)

1.0
10
IC COLLECTOR CURRENT (AMPS)

1A

15

0.5 A

10
5.0

IB = 2 A

30

1.5 A
25
1A
20
0.5 A

15
10
5.0

TJ = 25C

TJ = 25C

0
0

5.0
10
15
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

Motorola Bipolar Power Transistor Device Data

25

5.0
10
15
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

25

Figure 8. Typical Output Characteristics

  
TYPICAL CHARACTERISTICS
PNP MJL21193

NPN MJL21194

2.5

1.4
TJ = 25C
IC/IB = 10

SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

3.0

2.0
1.5
1.0

VBE(sat)

0.5

1.2

TJ = 25C
IC/IB = 10

1.0
VBE(sat)

0.8
0.6
0.4
0.2

VCE(sat)

VCE(sat)
1.0
10
IC, COLLECTOR CURRENT (AMPS)

100

1.0
10
IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

Figure 10. Typical Saturation Voltages

PNP MJL21193

NPN MJL21194

10
TJ = 25C

1.0

0
0.1

VBE(on) , BASEEMITTER VOLTAGE (VOLTS)

VBE(on) , BASEEMITTER VOLTAGE (VOLTS)

0
0.1

VCE = 20 V (SOLID)

0.1
0.1

VCE = 5 V (DASHED)

1.0

10

100

100

10
TJ = 25C

VCE = 20 V (SOLID)
1.0

0.1
0.1

VCE = 5 V (DASHED)

1.0

10

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical BaseEmitter Voltage

Figure 12. Typical BaseEmitter Voltage

100

IC, COLLECTOR CURRENT (AMPS)

100

There are two limitations on the power handling ability of a

transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.

1 SEC
10

1.0

0.1
1.0

TC = 25C

10

100

1000

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

Motorola Bipolar Power Transistor Device Data

  
10000

10000
TC = 25C

Cib
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

TC = 25C

1000
Cob

1000

Cob

f(test) = 1 MHz)
100
0.1

Cib

f(test) = 1 MHz)
1.0

10

100
0.1

100

1.0

10

100

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJL21193 Typical Capacitance

Figure 15. MJL21194 Typical Capacitance

1.2

T , TOTAL HARMONIC
HD
DISTORTION (%)

1.1
1.0
0.9
0.8
0.7
0.6
10

100

1000

10000

100000

FREQUENCY (Hz)

Figure 16. Typical Total Harmonic Distortion

+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER

SOURCE
AMPLIFIER

50
DUT
0.5

0.5

8.0

DUT

50 V

Figure 17. Total Harmonic Distortion Test Circuit

Motorola Bipolar Power Transistor Device Data

  
PACKAGE DIMENSIONS

0.25 (0.010)

T B

T
C
E

U
N
A
1

Y
P
K

F 2 PL
G

J
H

D 3 PL
0.25 (0.010)

Y Q

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W

MILLIMETERS
MIN
MAX
2.8
2.9
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.0
11.4
3.95
4.75
2.2
2.6
3.1
3.5
2.15
2.35
6.1
6.5
2.8
3.2

INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.433
0.449
0.156
0.187
0.087
0.102
0.122
0.137
0.085
0.093
0.240
0.256
0.110
0.125

STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER

CASE 340G02
TO3PBL
ISSUE E

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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Motorola Bipolar Power Transistor Device Data

*MJL21193/D*

MJL21193/D

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