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Technical Data
MRF5S9100NR1
MRF5S9100NBR1
Value
Unit
Rating
VDSS
- 0.5, +68
Vdc
VGS
- 0.5, + 15
Vdc
PD
336
1.92
W
W/C
Tstg
- 65 to +150
TJ
200
Symbol
Value (1,2)
Unit
RJC
0.52
C/W
RF Device Data
Freescale Semiconductor
MRF5S9100NR1 MRF5S9100NBR1
1
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Rating
Unit
260
Symbol
Min
Typ
Max
Unit
IDSS
10
Adc
IDSS
Adc
IGSS
Adc
VGS(th)
2.8
3.5
Vdc
VGS(Q)
3.7
Vdc
VDS(on)
0.21
0.3
Vdc
gfs
Output Capacitance
(VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
70
pF
Crss
2.2
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ 750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps
18
19.5
dB
Drain Efficiency
26
28
ACPR
- 46.8
- 45
dBc
IRL
- 19
-9
dB
MRF5S9100NR1 MRF5S9100NBR1
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
C22
+
C21
+
C20
C19
VSUPPLY
C17
C18
C6
C8
DUT
Z1
Z2
C1
Z3
Z4
Z5
C3
C4
Z6
Z7
+
C15
+
C14
+
C13
L2
L1
RF
INPUT
C16
Z9
RF
OUTPUT
C10
Z10
Z11
Z12
Z13
Z14
Z15
Z8
C12
C2
Z1, Z15
Z2
Z3
Z4
Z5
Z6, Z11
Z7
C7
C5
Z8
Z9
Z10
Z12
Z13
Z14
PCB
C9
C11
Description
Part Number
Manufacturer
B1
2743019447
Fair - Rite
18 pF Chip Capacitors
100B180JP 500X
ATC
C2
27271SL
Johanson Dielectrics
C3, C11
27291SL
Johanson Dielectrics
C4
100B6R2JP 500X
ATC
C5, C6
12 pF Chip Capacitors
100B120JP 500X
ATC
C7, C8
11 pF Chip Capacitors
100B110JP 500X
ATC
C9, C10
100B5R1JP 500X
ATC
C13
NACZF471M63V
Nippon
C14, C15
T491X226K035AS
Kemet
C1825C564J5GAC
Kemet
C20, C21
T491D4T6K016AS
Kemet
C22
515D107M050BB6A
Multicomp
L1
7.15 nH Inductor
1606 - 7
CoilCraft
L2
22 nH Inductor
B07T - 5
CoilCraft
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
C21 C20
C15 C14
VGG
C13
C22
B1
C18
C19
C16
C6
C8
VDD
C17
C10
C2
C3
C5
WB2
WB1
C4
L1
C1
C12
L2
C9
C7
C11
MRF9100M
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF5S9100NR1 MRF5S9100NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
40
18
30
VDD = 26 Vdc, Pout = 20 W (Avg.), IDQ = 950 mA
NCDMA IS95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
16
14
IRL
12
ACPR
30
40
10
50
ALT
8
6
830
20
840
60
850
860
870
880
890
900
910
70
920
10
15
20
25
30
20
D , DRAIN
EFFICIENCY (%)
50
22
f, FREQUENCY (MHz)
18
16
Gps
14
IRL
12
10
40
50
ACPR
60
8
6
830
70
ALT
840
850
860
870
880
890
900
910
80
920
10
15
20
25
30
20
10
22
D , DRAIN
EFFICIENCY (%)
f, FREQUENCY (MHz)
20
20
IDQ = 1425 mA
21
1150 mA
950 mA
19
700 mA
18
17
16
0.1
475 mA
VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two Tone Measurements
1
10
100
1000
25
30
1425 mA
35
IDQ = 475 mA
40
45
1150 mA
50
950 mA
55
700 mA
60
65
70
0.1
10
100
1000
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
58
Ideal
57
Pout, OUTPUT POWER (dBm)
10
20
3rd Order
30
5th Order
40
7th Order
50
70
0.1
10
56
55
54
53
52
Actual
51
50
60
49
48
100
28
29
30
31
32
33
34
35
36
45
40
35
40
35
45
30
50
ACPR
25
55
Gps
20
60
15
65
10
70
75
ALT1
80
10
100
50
38
37
TYPICAL CHARACTERISTICS
19.5
19
18.5
20 V
24 V
18
32 V
16 V
17.5
20
109
108
VDD = 12 V
17
0
30
60
90
120
150
180
107
80
100
120
140
160
180
200
220
RF Device Data
Freescale Semiconductor
100
10
20
30
40
50
0.1
(dB)
PROBABILITY (%)
10
0.01
0.001
60
70
80
90
0.0001
0
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
...
.
..
.
ALT1 in 30 kHz
+ALT1 in 30 kHz
.
..
.
Integrated BW
Integrated BW
..................
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
......
...........
......
...
..........
...........
100
110
3.6 2.9 2.2
1.5
0.7
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
f = 895 MHz
Zload
f = 865 MHz
f = 865 MHz
f = 895 MHz
Zsource
Zo = 5
Zsource
Zload
865
3.0 - j1.8
1.4 - j0.7
880
2.8 - j1.9
1.5 - j0.6
895
2.7 - j1.7
1.5 - j0.5
Output
Matching
Network
Device
Under Test
Input
Matching
Network
source
load
MRF5S9100NR1 MRF5S9100NBR1
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
NOTES
MRF5S9100NR1 MRF5S9100NBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
E1
2X
E3
GATE LEAD
DRAIN LEAD
D1
4X
4X
b1
aaa M C A
2X
2X
D2
c1
DATUM
PLANE
ZONE J
A1
2X
A2
E2
NOTE 7
E5
E4
D3
3
E5
BOTTOM VIEW
SEATING
PLANE
PIN 5
NOTE 8
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF5S9100NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS D" AND E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS D" AND E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
.551
.559
.353
.357
.132
.140
.124
.132
.270
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF5S9100NR1 MRF5S9100NBR1
12
RF Device Data
Freescale Semiconductor
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
13
MRF5S9100NR1 MRF5S9100NBR1
14
RF Device Data
Freescale Semiconductor
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
15
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescales Environmental Products program, go to http://www.freescale.com/epp.
MRF5S9100NR1 MRF5S9100NBR1
Document Number: MRF5S9100N
Rev. 5, 5/2006
16
RF Device Data
Freescale Semiconductor