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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3638
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3638 is N-channel MOS FET device that features a low


on-state resistance and excellent switching characteristics, and

PART NUMBER

PACKAGE

2SK3638-ZK

TO-252 (MP-3ZK)

designed for low voltage high current applications such as


DC/DC converter with synchronous rectifier.

FEATURES

(TO-252)

Low on-state resistance


RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)
Low Ciss: Ciss = 1100 pF TYP.
Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25C)


Drain to Source Voltage (VGS = 0 V)

VDSS

20

Gate to Source Voltage (VDS = 0 V)

VGSS

20

Drain Current (DC) (TC = 25C)

ID(DC)

64

ID(pulse)

220

Total Power Dissipation (TC = 25C)

PT1

36

Total Power Dissipation

PT2

1.0

Channel Temperature

Tch

150

Storage Temperature

Tstg

55 to +150

Drain Current (pulse)

Note

Note PW 10 s, Duty Cycle 1%

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15966EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan

The mark

shows major revised points.

2002

2SK3638
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

10

Gate Leakage Current

IGSS

VGS = 20 V, VDS = 0 V

10

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.5

| yfs |

VDS = 10 V, ID = 32 A

12

RDS(on)1

VGS = 10 V, ID = 32 A

6.8

8.5

RDS(on)2

VGS = 4.5 V, ID = 18 A

10

15

Gate Cut-off Voltage


Forward Transfer Admittance

Note

Drain to Source On-state Resistance

Note

Input Capacitance

25

Ciss

VDS = 10 V

1100

pF

Coss

VGS = 0 V

450

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

170

pF

Turn-on Delay Time

td(on)

VDD = 10 V, ID = 32 A

10

ns

tr

VGS = 10 V

4.3

ns

td(off)

RG = 10

35

ns

9.7

ns

Output Capacitance

Rise Time
Turn-off Delay Time
Fall Time

tf

Total Gate Charge

QG

VDD = 16 V

22

nC

Gate to Source Charge

QGS

VGS = 10 V

4.3

nC

QGD

ID = 64 A

5.1

nC

VF(S-D)

IF = 64 A, VGS = 0 V

1.0

Reverse Recovery Time

trr

IF = 64 A, VGS = 0 V

31

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/s

23

nC

Gate to Drain Charge


Body Diode Forward Voltage

Note

Note Pulsed: PW 350 s, Duty Cycle 2%


TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE


D.U.T.

D.U.T.
VGS

RL
VGS
RG

PG.

Wave Form

VDD

VGS

10%

PG.
90%

= 1 s
Duty Cycle 1%

90%

VDS
VDS

10%

10%

tr

td(off)

Wave Form

td(on)
ton

RL

50

VDD

90%

VDS
VGS
0

IG = 2 mA

tf
toff

Data Sheet D15966EJ3V0DS

2SK3638
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

120

50

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS


SAFE OPERATING AREA

100
80
60
40
20

40

30

20

10

0
0

25

50

75

100

125

150

175

25

50

75

100

125

150

175

TC - Case Temperature - C

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA


1000
PW = 10 s

100

I D (D C )
100 s
R D S (on) Lim ited
(at V G S = 10 V )

10

0.1

1 ms

DC

P ower D issipation Lim ited

10 m s

T C = 25C
Single pulse
0.1

10

100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

I D (pulse)

R th(ch-A) = 125C/W
100

10
R th(ch-C) = 3.47C/W

0.1
Single pulse
0.01
10

100

1m

10 m

100 m

10

100

1000

PW - Pulse Width - s

Data Sheet D15966EJ3V0DS

2SK3638

DRAIN CURRENT vs.


DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS


100

200

ID - Drain Current - A

ID - Drain Current - A

250

V GS = 10 V

150

100

4.5 V

50

0.5

1.5

2.5

VDS - Drain to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.


CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.


DRAIN CURRENT

V DS = 10 V
ID = 1 m A

2.5
2
1.5
1
0.5
0
-50

RDS(on) - Drain to Source On-state Resistance - m

50

100

100
T ch = 55C
25C
75C
150C
10

V DS = 10 V
Pulsed

0.1
0.1

150

10

100

Tch - Channel Temperature - C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.


DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.


GATE TO SOURCE VOLTAGE

30

Pulsed

25
20
15
V GS = 4.5 V

10

10 V

5
0
1

10

100

1000

RDS(on) - Drain to Source On-state Resistance - m

VGS(off) - Gate Cut-off Voltage - V

0.01

VGS - Gate to Source Voltage - V

ID - Drain Current - A

0.1

| yfs | - Forward Transfer Admittance - S

V DS = 10 V
Pulsed

Pulsed

T ch = 55C
25C
75C
150C

10

Data Sheet D15966EJ3V0DS

30

Pulsed

25
20
15
10
ID = 32 A
5
0
0

10

15

VGS - Gate to Source Voltage - V

20

DRAIN TO SOURCE ON-STATE RESISTANCE vs.


CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

25

10 00 0

Ciss, Coss, Crss - Capacitance - pF

20

15

V GS = 4.5 V
10 V

10

1 00 0

-50

50

100

C rs s

10 0

10
0 .01

150

Tch - Channel Temperature - C

SWITCHING CHARACTERISTICS

10

100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS


20

VDS - Drain to Source Voltage - V

V D D = 10 V
V G S = 10 V
R G = 10
100
t d(off)

t d(on)
10
tf
tr

10
V D D = 16 V
10 V

16

12

6
V GS

2
V DS

I D = 64 A

1
0.1

10

0
0

100

ID - Drain Current - A

10

20

25

REVERSE RECOVERY TIME vs.


DIODE FORWARD CURRENT

1000

trr - Reverse Recovery Time - ns

1000
V G S = 10 V

100

15

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE


FORWARD VOLTAGE

IF - Diode Forward Current - A

0 .1

VDS - Drain to Source Voltage - V

1000

td(on), tr, td(off), tf - Switching Time - ns

C is s
C oss

ID = 32 A
Pulsed

VGS = 0 V
f = 1 MHz

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - m

2SK3638

10
0V
1

0.1

di/dt = 100 A/ s
V GS = 0 V

100

10

Pulsed
0.01

1
0

0.5

1.5

VF(S-D) - Source to Drain Voltage - V

Data Sheet D15966EJ3V0DS

0.1

10

100

IF - Diode Forward Current - A

2SK3638
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
2.30.1

1.0 TYP.

6.50.2
5.1 TYP.
4.3 MIN.

0.50.1
No Plating

0.8

1.14 MAX.

0.51 MIN.

4.0 MIN.

6.10.2
10.4 MAX. (9.8 TYP.)

No Plating
0 to 0.25
0.50.1

0.760.12
2.3

2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)

1.0

EQUIVALENT CIRCUIT
Drain

Body
Diode

Gate

Gate
Protection
Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

Data Sheet D15966EJ3V0DS

2SK3638

The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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