!

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4523AX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current

VBE = 0 V

tf

Fall time

8
6.5
0.3
0.14

1500
800
11
29
45
3.0
0.4
-

V
V
A
A
W
V
A
A
s
s

PINNING - SOT399
PIN

PIN CONFIGURATION

DESCRIPTION

base

collector

emitter

Ths 25 C
IC = 8 A; IB = 2 A
f = 16 kHz
f = 70 kHz
ICsat = 8 A; f = 16 kHz
ICsat = 6.5 A; f = 70 kHz

case isolated

SYMBOL

case

b
e

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

Ths 25 C

MIN.

MAX.

UNIT

-55
-

1500
800
11
29
7
10
7
45
150
150

V
V
A
A
A
A
A
W
C
C

TYP.

MAX.

UNIT

2.8

K/W

35

K/W

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

1 Turn-off current.

May 1998

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4523AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all

three terminals to external
heatsink

R.H. 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz

heatsink

MIN.

TYP.

MAX.

UNIT

2500

22

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

7.5
800

12.5
-

100
-

A
V
V

0.85
4.2

0.95
14
5.8

3.0
1.1
7.3

V
V

TYP.

MAX.

UNIT

4.5
0.30

5.5
0.40

s
s

2.3
0.14

s
s

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2

ICES
ICES

Collector cut-off current

IEBO
BVEBO
VCEOsust

Emitter cut-off current

Emitter-base breakdown voltage
Collector-emitter sustaining voltage

VCEsat
VBEsat
hFE
hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage
DC current gain

VBE = 0 V; VCE = VCESMmax

VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
VEB = 6 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 8 A; IB = 2 A
IC = 8 A; IB = 2 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

ts
tf

PARAMETER

CONDITIONS

Switching times (16 kHz line

deflection circuit)

ICsat = 8.0 A;IB1 = 1.6 A

(IB2 = -4.0 A)

Turn-off storage time

Turn-off fall time
Switching times (70 kHz line
deflection circuit)

ts
tf

ICsat = 6.5 A;IB1 = 1.3 A

(IB2 = -3.9 A)

Turn-off storage time

Turn-off fall time

2 Measured with half sine-wave voltage (curve tracer).

May 1998

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4523AX

ICsat

TRANSISTOR

+ 50v
IC

100-200R

DIODE
t

IB1

IB

Horizontal
t

Oscilloscope

2.5us

7.1us

IB2

Vertical
14.2us

1R

100R

VCE

6V
30-60 Hz
t

Fig.1. Test circuit for VCEOsust.

Fig.4. Switching times waveforms (70 kHz).

IC / mA

ICsat
90 %
IC

250
10 %

200

tf

ts
IB
IB1

100

t
0
VCE / V

min
VCEOsust

- IB2

Fig.2. Oscilloscope display for VCEOsust.

TRANSISTOR
IC

Fig.5. Switching times definitions.

ICsat

+ 150 v nominal
adjust for ICsat

DIODE
t

Lc
IB1

IB

t
20us

26us

IB2

IBend

64us
VCE

LB

T.U.T.
Cfb

-VBB
t

Fig.6. Switching times test circuit.

Fig.3. Switching times waveforms (16 kHz).

May 1998

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

100

BU4523AX

VBEsat / V

BU4523AF/X

hFE
VCE = 1 V

BU4523AF/X

1.2

Ths = 25 C
Ths = 85 C

Ths = 25 C
Ths = 85 C

1.1
IC = 8 A

1
10

0.9
0.8

IC = 6.5 A

0.7
1
0.01

0.1

10

IC / A

0.6

100

Fig.7. High and low DC current gain.

hFE

Fig.10. Typical base-emitter saturation voltage.

BU4523AF/X

BU4523AF/X 16kHz

ts/tf / us

100

10
VCE = 5 V

IB / A

ICsat = 8 A
Ths = 85 C
Freq = 16 kHz

Ths = 25 C
Ths = 85 C

ts
6
10

tf
1
0.01

0.1

10

IC / A

100

Fig.8. High and low DC current gain.

VCEsat / V

IB / A

Fig.11. Typical collector storage and fall time.

IC =8 A; Tj = 85C; f = 16kHz

BU4523AF/X

10

120

Normalised Power Derating

PD%

with heatsink compound

110
Ths = 25 C
Ths = 85 C

100
90
80
70

60
50
40

IC/IB = 5

0.1

30
20
10
0

0.01
0.1

0
1

10

IC / A

100

40

60

80
Ths / C

100

120

140

Fig.12. Normalised power dissipation.

PD% = 100PD/PD 25C

Fig.9. Typical collector-emitter saturation voltage.

May 1998

20

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

10

0.1

BU4523AX

Zth / (K/W)

IC / A
30

BU2523

0.5
0.2
0.1
0.05

20

0.02
10
PD

0.01
D=0
0.001
1E-06

tp
D=
T

tp

1E-04

1E-02
t/s

0
100

1000

1500

VCE / V

1E+00

Fig.15. Reverse bias safe operating area. Tj Tjmax

Fig.13. Transient thermal impedance.

10

Ic(sat) (A)

VCC

8
7
6
5

LC

IBend

-VBB

VCL
LB

T.U.T.

CFB

10

20

30
50
70
40
60
Horizontal frequency (kHz)

80

90

100

Fig.16. ICsat during normal running vs. frequency of

operation for optimum performance

Fig.14. Test Circuit RBSOA.

May 1998

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4523AX

MECHANICAL DATA
Dimensions in mm

5.8 max

16.0 max

Net Mass: 5.88 g

3.0

0.7
4.5
3.3

10.0
27
max

25
25.1
25.7

22.5
max
5.1
2.2 max
18.1
min

4.5
1.1
0.4 M
2
5.45

0.9 max

5.45

3.3

Fig.17. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

May 1998

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4523AX

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

May 1998

Rev 1.100